Abstract: A multiple particle beam system with a mirror mode of operation, a method for operating a multiple particle beam system with a mirror mode of operation and an associated computer program product are disclosed. The multiple particle beam system can be operated in different mirror modes of operation which allow the multiple particle beam system to be inspected and recalibrated thoroughly. A detection system configured to operate in a first detection mode and/or in a second detection mode is used for the analysis.

Abstract: A multi-beam charged particle system is configured for selecting a first and a second, different image acquisition property, and for acquiring a first image and a second image of a surface of a wafer with a plurality of primary charged particle beamlets. The multi-beam charged particle system is configured for image processing of the first and the second images to obtain at least one processed image. The technology can be used in applications of multi-beam charged particle system, where relatively high beam uniformity and throughput are often desirable. A corresponding method is disclosed. The system and method can yield improved image contrast.

Abstract: A multiple particle beam system comprises a magnetic immersion lens and a detection system. A cross-over of the second individual particle beams is provided in the secondary path between the beam switch and the detection system, and a contrast aperture with a central cutout for cutting out the secondary beams is arranged in the region of the cross-over. A contrast correction lens system with a first magnetic contrast correction lens is arranged between the objective lens and the contrast aperture. The contrast correction lens system is configured to generate a magnetic field with an adjustable strength and correct beam tilts of the secondary beams in the cross-over in relation to the optical axis of the multiple particle beam system. It is possible to obtain a more uniform contrast for different individual images and the contrast can be improved overall.

Abstract: A multiple particle beam system comprises: a magnetic lens through which a plurality of individual charged particle beams pass; and a controller configured to control, such as dynamically control, the magnetic lens. The magnetic lens comprises a coil, a winding body and a pole shoe. The coil is arranged around the winding body and the winding body is a hollow body through which the plurality of individual particle beams pass. The coil, together with the winding body, is arranged within the pole shoe. The pole shoe has an opening through which a magnetic field created by the magnetic lens emerges from the pole shoe and interacts with the plurality of individual particle beams to obtain a lens effect. The winding body is electrically conductive and has an interruption, by which the electrical conductivity of the winding body is interrupted in the circumferential direction around the particle-optical axis.

Abstract: A multiple particle beam microscope and an associated method can provide a fast autofocus around an adjustable working distance. A system can have one or more fast autofocus correction lenses for adapting, in high-frequency fashion, the focusing, the position, the landing angle and the rotation of individual particle beams upon incidence on a wafer surface during the wafer inspection. Fast autofocusing in the secondary path of the particle beam system can be implemented in analogous fashion. An additional increase in precision can be attained via fast aberration correction mechanism in the form of deflectors and/or stigmators.

Abstract: A particle beam system includes: a multi-beam particle source configured to generate a multiplicity of particle beams; an imaging optical unit configured to image an object plane in particle-optical fashion into an image plane and direct the multiplicity of particle beams on the image plane; and a field generating arrangement configured to generate electric and/or magnetic deflection fields of adjustable strength in regions close to the object plane. The particle beams are deflected in operation by the deflection fields through deflection angles that depend on the strength of the deflection fields.

Abstract: A multiple particle beam microscope and an associated method can provide a fast autofocus around an adjustable working distance. A system can have one or more fast autofocus correction lenses for adapting, in high-frequency fashion, the focusing, the position, the landing angle and the rotation of individual particle beams upon incidence on a wafer surface during the wafer inspection. Fast autofocusing in the secondary path of the particle beam system can be implemented in analogous fashion. An additional increase in precision can be attained via fast aberration correction mechanism in the form of deflectors and/or stigmators.

Abstract: A multi-beam charged particle system with a secondary electron imaging system is configured to dynamically compensate charging effects. The multi-beam charged particle system comprises an improved cross-over detection system and a cross-over actuation mechanism, which are both connected to a contrast control module. The system allows for closed-loop control of an intensity distribution of a plurality of secondary electron beamlets within a cross-over or pupil plane. The disclosure can be applied to wafer inspection with multi-beam charged particle system.

Abstract: A multi-beam charged particle microscope and a method of operating a multi-beam charged particle microscope for wafer inspection with high throughput and with high resolution and high reliability are provided. The method of operation and the multi-beam charged particle beam microscope comprises a mechanism for a synchronized scanning operation and image acquisition by a plurality of charged particle beamlets according a selected scan program, wherein the selected scan program can be selected according an inspection task from different scan programs.

Abstract: A method for imaging of semiconductor samples with reduced charging effects and a multi-beam charged particle beam system configured for imaging of semiconductor samples with reduced charging effects comprises adjusting the kinetic energy of primary charged particles to a low energy transition energy, where charging of a material composition is minimized. The system and method include for example a monitoring system and optimization of the kinetic energy to minimize charging effects.

Abstract: A multi-beam charged particle system and a method of operating a multi-beam charged particle system can provide improved image contrast. The multi-beam charged particle system comprises a filter element or an active array element in a detection system, which can provide improved, anisotropic image contrast. The disclosure can be applied for applications of multi-beam charged particle system, where higher desired beam uniformity and throughput may be relevant.

Abstract: A particle beam system includes: a multi-beam particle source configured to generate a multiplicity of particle beams; an imaging optical unit configured to image an object plane in particle-optical fashion into an image plane and direct the multiplicity of particle beams on the image plane; and a field generating arrangement configured to generate electric and/or magnetic deflection fields of adjustable strength in regions close to the object plane. The particle beams are deflected in operation by the deflection fields through deflection angles that depend on the strength of the deflection fields.

Abstract: A method for voltage contrast imaging, for example on a semiconductor sample, uses a corpuscular multi-beam microscope with a multiplicity of individual corpuscular beams in a grid arrangement. The method includes sweeping the multiplicity of individual corpuscular beams over a sample having at least one electrically chargeable structure, and charging the sample with a first quantity of first corpuscular beams of the corpuscular multi-beam microscope. The method also includes determining a voltage contrast at the at least one electrically chargeable structure of the sample with a second quantity of second corpuscular beams of the corpuscular multi-beam microscope.

Abstract: A particle beam system, such as a multi-beam particle microscope, includes a multi-beam deflection device and a beam stop. The multi-beam deflection device is arranged in the particle-optical beam path downstream of the multi-beam generator and upstream of the beam switch of the particle beam system. The multi-beam deflection device serves collectively blanks a multiplicity of charged individual particle beams. These impinge on a beam stop, which is arranged in the particle-optical beam path level with a site at which a particle beam diameter is reduced or is at a minimum. By way of example, such sites are the cross-over plane of the individual particle beams or an intermediate image plane. Associated methods for operating the particle beam system and associated computer program products are disclosed.

Abstract: A particle beam system includes: a multi-beam particle source configured to generate a multiplicity of particle beams; an imaging optical unit configured to image an object plane in particle-optical fashion into an image plane and direct the multiplicity of particle beams on the image plane; and a field generating arrangement configured to generate electric and/or magnetic deflection fields of adjustable strength in regions close to the object plane. The particle beams are deflected in operation by the deflection fields through deflection angles that depend on the strength of the deflection fields.

Abstract: A multi-beam charged particle beam system and a method of operating a multi-beam charged particle beam system with higher precision are configured for a determination of an assignment of secondary electron focus spot to a plurality of sets of detection elements. The system and method are further configured to adjust the assignment and for a calibration of a monitoring method and system for monitoring the assignment. The system and method are applicable for an inspection of samples, for example for wafer or mask inspection.

Abstract: A method for operating a multi-beam particle microscope in an inspection mode of operation and an associated multi-beam particle microscope are disclosed, wherein a detection unit comprises an image generation detection region with fixedly assigned detection channels and an adjustment detection region with additional detection channels. The fixedly assigned detection channels and the additional detection channels are in the same detection plane. Based on signals obtained via the additional detection channels, it is possible to correct an incidence position of the secondary beams on the detection unit in real time, to be precise independently of the specific structure of the detection unit.

Abstract: Password-less authentication and login onto an application are disclosed. A processor extracts Digital Driver's License (DDL) data from a user's computing device; extracts the DDL data of the user from an external database (i.e., DMV); validates the DDL data by comparing with the DDL data from the external database; creates, in response to validating, a DDL secret private key; allows successful registration of the computing device to utilize DDL data for login; and stores the DDL secret private key onto an internal database and a secured environment of the computing device. At login request by the user, when the processor determines that the computing device is successfully registered, it validates the DDL secret private key by comparing with data from the internal database; creates a new DDL secret private key and updates the internal database and the secured environment with the new DDL secret private key for subsequent login.

Abstract: A method of operating a multi-beam particle beam system includes: generating a multiplicity of particle beams such that they each pass through multipole elements that are either intact or defective; focusing the particle beams in a predetermined plane; determining excitations for the deflection elements of the multipole elements; exciting the deflection elements of the multipole elements that are intact with the determined excitations; modifying the determined excitations for the deflection elements of the multipole elements that are defective; and exciting the deflection elements of the defective multipole elements with the modified excitations. Modifying the determined excitations includes adding corrective excitations to the determined excitations. The corrective excitations are the same for all deflection elements of the defective multipole element.

Abstract: Systems and methods for identifying changes in customer mutable characteristics in customer identity data using transactional data are disclosed. According to an embodiment, a method may include: (1) receiving, by a computer program executed by an electronic device, a plurality of transactions conducted with a financial instrument issued to a customer; (2) extracting, by the computer program, metadata from one of the plurality of transactions; (3) retrieving, by the computer program, a plurality of stored mutable characteristics for the customer; (4) determining, by the computer program, that the metadata indicates a possible change in one of the plurality of stored mutable characteristics; (5) requesting, by the computer program, confirmation that the one stored mutable characteristic has changed; and (6) updating, by the computer program, the one stored mutable characteristic in response to receiving confirmation that the one stored mutable characteristic has changed.