Abstract: At least one example embodiment provides a method including obtaining surface information of a patient using a camera; determining a motion of the patient based on the surface information; and providing an indicator of a region of interest (ROI) of the patient based on the motion.

Abstract: A projection exposure apparatus (400) for semiconductor lithography contains at least one partial volume (4) that is closed off from the surroundings. The partial volume (4) contains a gas, from which a plasma can be produced. Conditioning elements (20, 21, 22, 23, 24, 25) for conditioning the plasma, in particular for neutralizing the plasma, are present in the partial volume. An associated method for operating a projection exposure apparatus is also disclosed.

Abstract: In order to prevent delamination of a reflective coating from the substrate under the influence of reactive hydrogen, a reflective optical element (50) for EUV lithography is provided, which has a substrate (51) and a reflective coating (54) for reflecting radiation in the wavelength range of 5 nm to 20 nm. A functional layer (60) is arranged between the reflective coating (54) and the substrate (51). With the functional layer, the concentration of hydrogen in atom % at the side of the substrate facing the reflective coating is reduced by at least a factor of 2.

Abstract: A projection exposure apparatus (400) for semiconductor lithography contains at least one partial volume (4) that is closed off from the surroundings. The partial volume (4) contains a gas, from which a plasma can be produced. Conditioning elements (20, 21, 22, 23, 24, 25) for conditioning the plasma, in particular for neutralizing the plasma, are present in the partial volume. An associated method for operating a projection exposure apparatus is also disclosed.

Abstract: In order to prevent delamination of a reflective coating from the substrate under the influence of reactive hydrogen, a reflective optical element (50) for EUV lithography is provided, which has a substrate (51) and a reflective coating (54) for reflecting radiation in the wavelength range of 5 nm to 20 nm. A functional layer (60) is arranged between the reflective coating (54) and the substrate (51). With the functional layer, the concentration of hydrogen in atom % at the side of the substrate facing the reflective coating is reduced by at least a factor of 2.

Abstract: A method and a device for the material-fit connection of an optical element to a frame are disclosed.

Abstract: A combined nuclear and ultrasonic system for hybrid imaging is proposed. It comprises a hand-held nuclear radiation detector, a hand-held ultrasonic probe, a nuclear tracking system for tracking the nuclear radiation detector while measuring a nuclear radiation and obtaining nuclear radiation detector coordinates representing a position of the tracked nuclear radiation detector in relation to an image coordinate system of a hybrid image, an ultrasonic tracking system for tracking of the ultrasonic probe during the receiving of ultrasonic signals so that ultrasonic probe coordinates are obtained which represent a position of the tracked ultrasonic probe in relation to an image coordinate system of the hybrid image, and a data acquisition module, which gathers the nuclear radiation detector measurements, nuclear radiation detector coordinates, ultrasonic signals from the ultrasonic probe, and ultrasonic probe coordinates, and matches them with an image coordinate system of a hybrid image.

Abstract: In order to clean optical components (35) inside an EUV lithography device in a gentle manner, a cleaning module for an EUV lithography device includes a supply line for molecular hydrogen and a heating filament for producing atomic hydrogen and hydrogen ions for cleaning purposes. The cleaning module also has an element, (33) arranged to apply an electric and/or magnetic field, downstream of the heating filament (29) in the direction of flow of the hydrogen (31, 32). The element can be designed as a deflection unit, as a filter unit and/or as an acceleration unit for the ion beam (32).

Abstract: A method and a device for the material-fit connection of an optical element to a frame are disclosed.

Abstract: An EUV lithography device including an illumination device for illuminating a mask at an illumination position in the EUV lithography device and a projection device for imaging a structure provided on the mask onto a light-sensitive substrate. The EUV lithography device has a processing device (15) for processing an optical element (6a), in particular the mask, preferably in a locally resolved manner, at a processing position in the EUV lithography device. For activating at least one gas component of the gas stream (27), the processing device (15) includes a particle generator (30) for generating a particle beam, in particular an electron beam (30a), and/or a high-frequency generator.

Abstract: A mirror serves for guiding a radiation bundle. The mirror has a basic body and a coating of a reflective surface of the basic body, the coating increasing the reflectivity of the mirror. A heat dissipating device serves for dissipating heat deposited in the coating. The heat dissipating device has at least one Peltier element. The coating is applied directly on the Peltier element. A temperature setting apparatus has at least one temperature sensor for a temperature of the reflective surface. A regulating device of the Temperature setting apparatus can be connected to the at least one Peltier element and is signal-connected to the at least one temperature sensor. The result is a mirror in which a heat dissipating capacity of the heat dissipating device is improved.

Abstract: A method and a device for the material-fit connection of an optical element to a frame are disclosed.

Abstract: Spatial relationships are conveyed in three-dimensional ultrasound imaging. To transition a volume rendering from one view to another view, the transition is animated, showing rotation. For example, the user examines one diagnostic view, but decides to examine another diagnostic view. Upon selection of the other diagnostic view, the volume rendered image appears to rotate. The rotation from one view to another shows the spatial relationship between the views. The user may then examine the static volume rendering at the desired view with an appreciation of the relationship with the previously examined static view.

Abstract: A method for preventing contaminating gaseous substances (18) from passing through an opening (17b) in a housing (4a) of an EUV lithography apparatus (1), wherein at least one optical element for guiding EUV radiation (6) is arranged in the housing (4a). The method involves: generating at least one gas flow (21a, 21b) which deflects the contaminating substances (18, 18?), and in particular is directed counter to the flow direction (Z) thereof, in the region of the opening (17b). The gas flow (21a, 21b) and the EUV radiation (6) are generated in pulsed fashion and the pulse rate of the gas flow (21a, 21b) is defined in a manner dependent on the pulse rate of the contaminating substances (18, 18?) released under the action of the pulsed EUV radiation (6), wherein both pulse rates are preferably equal in magnitude, and wherein, in the region of the opening (17b), the gas pulses temporally overlap the pulses of the contaminating substances (18, 18?).

Abstract: An EUV lithography device including an illumination device for illuminating a mask at an illumination position in the EUV lithography device and a projection device for imaging a structure provided on the mask onto a light-sensitive substrate. The EUV lithography device has a processing device (15) for processing an optical element (6a), in particular the mask, preferably in a locally resolved manner, at a processing position in the EUV lithography device. For activating at least one gas component of the gas stream (27), the processing device (15) comprises a particle generator (30) for generating a particle beam, in particular an electron beam (30a), and/or a high-frequency generator.

Abstract: A cleaning module for an EUV lithography device with a supply (206) for molecular hydrogen, a heating filament (210) and a line (212) for atomic and/or molecular hydrogen. The line (212) has at least one bend with a bending angle of less than 120 degrees, and has a material on its inner surface which has a low recombination rate for atomic hydrogen. The supply (206) is of flared shape at its end, which faces the heating filament (210). A gentler cleaning of optical elements is achieved with such a cleaning module, or also by exciting a cleaning gas with a cold cathode or a plasma, or by filtering out charged particles via of electrical and/or magnetic fields.

Abstract: In order to clean optical components (35) inside an EUV lithography device in a gentle manner, a cleaning module for an EUV lithography device includes a supply line for molecular hydrogen and a heating filament for producing atomic hydrogen and hydrogen ions for cleaning purposes. The cleaning module also has an element, (33) arranged to apply an electric and/or magnetic field, downstream of the heating filament (29) in the direction of flow of the hydrogen (31, 32). The element can be designed as a deflection unit, as a filter unit and/or as an acceleration unit for the ion beam (32).

Abstract: A mirror serves for guiding a radiation bundle. The mirror has a basic body and a coating of a reflective surface of the basic body, the coating increasing the reflectivity of the mirror. A heat dissipating device serves for dissipating heat deposited in the coating. The heat dissipating device has at least one Peltier element. The coating is applied directly on the Peltier element. A temperature setting apparatus has at least one temperature sensor for a temperature of the reflective surface. A regulating device of the Temperature setting apparatus can be connected to the at least one Peltier element and is signal-connected to the at least one temperature sensor. The result is a mirror in which a heat dissipating capacity of the heat dissipating device is improved.

Abstract: Inside a vacuum chamber 200 a cleaning unit 204 provides atomic hydrogen or atomic deuterium for cleaning a surface 202 at a pressure of less than 10?4 Torr or of more than 10?3 Torr. The surface 202 is heated by the heating unit 203 to a temperature of at least 50° C. This allows achieving cleaning rates of more than 60 ?/h. Preferably, the surface 202 is the surface of a multilayer mirror 201 as used in an EUV lithography apparatus.

Abstract: The disclosure relates to methods for producing mirrors, in particular facet mirrors, and projection exposure apparatuses equipped with the mirrors.