Abstract: A power semiconductor device includes: a semiconductor body with a drift region of a first conductivity type and load terminals at opposite first and second sides of the semiconductor body. The power semiconductor device is configured to conduct a forward load current between the load terminals. A trench grid structure extending from the first side into the semiconductor body includes a plurality of macro cells. Each macro cell includes at least one first type micro cell configured for the forward load current conduction and a number of second type micro cells not configured for the forward load current conduction. Each micro cell is laterally confined by a respective portion of the trench grid structure. In each macro cell, the number of the second type micro cells is equal to or greater than the number of first type micro cells.

Abstract: A process for producing a crosslinked cellulose ether including contacting an activated cellulose material with (i) an aqueous crosslinking agent emulsion, wherein the aqueous crosslinking agent emulsion is a mixture of (ia) at least one crosslinking agent; (ib) water; and (ic) any other optional components desired; and (ii) at least one etherification reagent; wherein the aqueous crosslinking agent emulsion (i) and the at least one etherification reagent (ii) react with the activated cellulose material to form the crosslinked cellulose ether; and a crosslinked cellulose ether produced by the above process.

Abstract: Described are antisense oligonucleotides comprising one or more ?-L-threofuranosyl (TNA) nucleosides as well as methods to modulate the properties of antisense oligonucleotides by the introduction of TNA nucleosides. These are particularly applicable for antisense gapmer oligonucleotides.

Abstract: A semiconductor assembly includes a substrate including a metal die attach surface, a semiconductor die that is arranged on the substrate, the semiconductor die being configured as a power semiconductor device and comprising a semiconductor body, a rear side metallization, and a front side layer stack, the front side layer stack comprising a front side metallization and a contaminant protection layer that is between the front side metallization and the semiconductor body, and a diffusion soldered joint between the metal die attach surface and the rear side metallization, the diffusion soldered joint comprising one or more intermetallic phases throughout the diffusion soldered joint, wherein the contaminant protection layer is configured to prevent transmission of contaminants into the semiconductor body.

Abstract: The present disclosure provides antisense oligonucleotides targeting Regulator of telomere elongation helicase 1 (RTEL1). The disclosure also provides, enhanced antisense oligonucleotides targeting RTEL1 for use in treating and/or preventing a hepatitis B virus (HBV) infection. Also disclosed are pharmaceutical compositions and their use.

Abstract: A semiconductor assembly includes a substrate including a metal die attach surface, a semiconductor die that is arranged on the substrate, the semiconductor die being configured as a power semiconductor device and comprising a semiconductor body, a rear side metallization, and a front side layer stack, the front side layer stack comprising a front side metallization and a contaminant protection layer that is between the front side metallization and the semiconductor body, and a diffusion soldered joint between the metal die attach surface and the rear side metallization, the diffusion soldered joint comprising one or more intermetallic phases throughout the diffusion soldered joint, wherein the contaminant protection layer is configured to prevent transmission of contaminants into the semiconductor body.

Abstract: A method of soldering elements together includes providing a substrate having a metal die attach surface, providing a semiconductor die that is configured as a power semiconductor device and having a semiconductor body, a rear side metallization, and a front side layer stack, the front side layer stack having a front side metallization and a contaminant protection layer, arranging the semiconductor die on the substrate with a region of solder material between the die attach surface and the rear side metallization, and performing a soldering process that reflows the region of solder material to form a soldered joint between the metal die attach surface and the rear side metallization, wherein the soldering process comprises applying mechanical pressure to the front side metallization.

Abstract: Enhanced antisense oligonucleotides targeting Regulator of telomere elongation helicase 1 (RTEL1), leading to modulation of the expression of RTEL1 or modulation of RTEL1 activity are provided. This disclosure relates to the use of enhanced antisense oligonucleotides targeting RTEL1 for use in treating and/or preventing a hepatitis B virus (HBV) infection, in particular a chronic HBV infection. This disclosure further relates to the use of the enhanced antisense oligonucleotides targeting RTEL1 for destabilizing cccDNA, such as HBV cccDNA. A pharmaceutical composition and its use in the treatment and/or prevention of a HBV infection is also described.

Abstract: A process for producing a crosslinked cellulose ether including contacting an activated cellulose material with (i) an aqueous crosslinking agent emulsion, wherein the aqueous crosslinking agent emulsion is a mixture of (ia) at least one crosslinking agent; (ib) water; and (ic) any other optional components desired; and (ii) at least one etherification reagent; wherein the aqueous crosslinking agent emulsion (i) and the at least one etherification reagent (ii) react with the activated cellulose material to form the crosslinked cellulose ether; and a crosslinked cellulose ether produced by the above process.

Abstract: A method of soldering elements together includes providing a substrate having a metal die attach surface, providing a semiconductor die that is configured as a power semiconductor device and having a semiconductor body, a rear side metallization, and a front side layer stack, the front side layer stack having a front side metallization and a contaminant protection layer, arranging the semiconductor die on the substrate with a region of solder material between the die attach surface and the rear side metallization, and performing a soldering process that reflows the region of solder material to form a soldered joint between the metal die attach surface and the rear side metallization, wherein the soldering process comprises applying mechanical pressure to the front side metallization, and wherein the contaminant protection layer is configured to prevent transmission of contaminants into the semiconductor body after the soldering process is completed.

Abstract: A power semiconductor device includes a semiconductor body having a drift region of a first conductivity type inside an active region. An edge termination region includes: a guard region of a second conductivity type at a front side of the semiconductor body and surrounding the active region; and a field plate trench structure extending vertically into the body from the front side and at least partially filled with a conductive material that is electrically connected with the guard region and insulated from the body external of the guard region. A first portion of the field plate trench structure at least partially extends into the guard region and is at least partially arranged below a metal layer arranged at the front side. A second portion of the field plate trench structure extends outside of the guard region and surrounds the active area, the metal layer not extending above the second portion.

Abstract: The present invention relates to antisense LNA oligonucleotides (oligomers) complementary to SREBF1 pre-mRNA intron and exon sequences, which are capable of inhibiting the expression of SREBP1 protein. Inhibition of SREBF1 expression is beneficial for a range of medical disorders including cardiovascular disease, type 2 diabetes, fatty liver, metabolic diseases, and cancer.

Abstract: A power semiconductor device includes a semiconductor body having a drift region of a first conductivity type inside an active region. An edge termination region includes: a guard region of a second conductivity type at a front side of the semiconductor body and surrounding the active region; and a field plate trench structure extending vertically into the body from the front side and at least partially filled with a conductive material that is electrically connected with the guard region and insulated from the body external of the guard region. A first portion of the field plate trench structure at least partially extends into the guard region and is at least partially arranged below a metal layer arranged at the front side. A second portion of the field plate trench structure extends outside of the guard region and surrounds the active area, the metal layer not extending above the second portion.

Abstract: A vortex pump with an impeller is provided. The impeller includes blades for delivering solids-containing media which are arranged in bundles. The spacing the blades in the bundles is smaller than the spacing of the bundles from each other.

Abstract: The present invention relates to antisense oligonucleotides that are capable of modulating expression of RelA in a target cell. The oligonucleotides are complementary to mammalian RELA pre-m RNA intron sequence. The present invention further relates to conjugates of the oligonucleotide and pharmaceutical compositions and methods for treatment of cancer, inflammation or autoimmune diseases using the oligonucleotide.

Abstract: The present invention relates to antisense oligonucleotides that are capable of modulating expression of NF-?B1 in a target cell. The oligonucleotides are complementary to mammalian NFKB1 pre-mRNA intron sequence. The present invention further relates to conjugates of the oligonucleotide and pharmaceutical compositions and methods for treatment of cancer, inflammation or autoimmune diseases using the oligonucleotide.

Abstract: The present invention relates to antisense oligonucleotides that are capable of modulating expression of RelB in a target cell. The oligonucleotides are complementary to mammalian RELB pre-mRNA sequence. The present invention further relates to conjugates of the oligonucleotide and pharmaceutical compositions and methods for treatment of cancer, inflammation or autoimmune diseases using the oligonucleotide.

Abstract: The present invention relates to antisense oligonucleotides that are capable of modulating expression of NF-kB2 in a target cell. The oligonucleotides are complementary to mammalian NFKB2 pre-mRNA sequence. The present invention further relates to conjugates of the oligonucleotide and pharmaceutical compositions and methods for treatment of cancer, inflammation or autoimmune diseases using the oligonucleotide.

Abstract: The present invention relates to antisense oligonucleotides that are capable of modulating expression of c-Rel in a target cell. The present invention further relates to conjugates of the oligonucleotide and pharmaceutical compositions and methods for treatment of cancer, inflammation or autoimmune diseases using the oligonucleotide.

Abstract: A vortex pump with an impeller is provided. The impeller includes blades for delivering solids-containing media which are arranged in bundles. The spacing the blades in the bundles is smaller than the spacing of the bundles from each other.