Abstract: Single domain antibodies are provided, which are capable of specifically binding to an epitope of a human complement factor selected from the group consisting of C1q, C3, C4 and/or the proteolytic derivatives C3b and C4b. Further the use of the antibodies are provided for methods in modulating the activity of the complement system as well as methods of treating disorders associated with complement activation.

Abstract: Single domain antibodies are provided, which are capable of specifically binding to an epitope of a human complement factor selected from the group consisting of C1q, C3, C4 and/or the proteolytic derivatives C3b and C4b. Further the use of the antibodies are provided for methods in modulating the activity of the complement system as well as methods of treating disorders associated with complement activation.

Abstract: Single domain antibodies are provided, which are capable of specifically binding to an epitope of a human complement factor selected from the group consisting of C1q, C3, C4 and/or the proteolytic derivatives C3b and C4b. Further the use of the antibodies are provided for methods in modulating the activity of the complement system as well as methods of treating disorders associated with complement activation.

Abstract: Single domain antibodies are provided, which are capable of specifically binding to an epitope of a human complement factor selected from the group consisting of C1q, C3, C4 and/or the proteolytic derivatives C3b and C4b. Further the use of the antibodies are provided for methods in modulating the activity of the complement system as well as methods of treating disorders associated with complement activation.

Abstract: Single domain antibodies are provided, which are capable of specifically binding to an epitope of a human complement factor selected from the group consisting of C1q, C3, C4 and/or the proteolytic derivatives C3b and C4b. Further the use of the antibodies are provided for methods in modulating the activity of the complement system as well 5 as methods of treating disorders associated with complement activation.

Abstract: A driver device includes: a voltage terminal; a ground terminal; an output terminal; a first nMOS power transistor having a drain electrically connected to the voltage terminal, a source electrically connected to the output terminal, and a gate; an overvoltage protection circuit configured to limit a gate-to-source voltage of the first nMOS power transistor in a normal operating mode for the driver device; a pulldown circuit configured to force the first nMOS power transistor off in a stress test mode for the driver device; and a blocking circuit configured to block current flow from the output terminal to the ground terminal through the overvoltage protection circuit and the pulldown circuit in the stress test mode. A method of stress testing the driver device is also described.

Abstract: A driver device includes: a voltage terminal; a ground terminal; an output terminal; a first nMOS power transistor having a drain electrically connected to the voltage terminal, a source electrically connected to the output terminal, and a gate; an overvoltage protection circuit configured to limit a gate-to-source voltage of the first nMOS power transistor in a normal operating mode for the driver device; a pulldown circuit configured to force the first nMOS power transistor off in a stress test mode for the driver device; and a blocking circuit configured to block current flow from the output terminal to the ground terminal through the overvoltage protection circuit and the pulldown circuit in the stress test mode. A method of stress testing the driver device is also described.

Abstract: Single domain antibodies are provided, which are capable of specifically binding to an epitope of a human complement factor selected from the group consisting of C1q, C3, C4 and/or the proteolytic derivatives C3b and C4b. Further the use of the antibodies are provided for methods in modulating the activity of the complement system as well 5 as methods of treating disorders associated with complement activation.

Abstract: A semiconductor device includes a first chip pad, a power semiconductor chip arranged on the first chip pad and including at least a first and a second power electrode, and a clip connected to the first power electrode. In this case, an integral part of the clip forms a shunt resistor and a first contact finger of the shunt resistor is embodied integrally with the clip.

Abstract: A semiconductor device comprises a first chip pad, a power semiconductor chip arranged on the first chip pad and comprising at least a first and a second power electrode, and a clip connected to the first power electrode. In this case, an integral part of the clip forms a shunt resistor and a first contact finger of the shunt resistor is embodied integrally with the clip.

Abstract: Disclosed is a method, a circuit arrangement, and an electronic circuit. The method includes discharging a gate-source capacitance of a transistor device from a first voltage level to a second voltage level with a first resistor connected in parallel with the gate-source capacitance and measuring a first discharging time associated with the discharging, and discharging the gate-source capacitance from the first voltage level to the second voltage level with the first resistor and a second resistor connected in parallel with the gate-source capacitance and measuring a second discharging time associated with the discharging. The method further includes comparing a ratio between the first discharging time and the second discharging time with a predefined threshold, and detecting a fault based on the comparing.

Abstract: Disclosed is a method, a circuit arrangement, and an electronic circuit. The method includes discharging a gate-source capacitance of a transistor device from a first voltage level to a second voltage level with a first resistor connected in parallel with the gate-source capacitance and measuring a first discharging time associated with the discharging, and discharging the gate-source capacitance from the first voltage level to the second voltage level with the first resistor and a second resistor connected in parallel with the gate-source capacitance and measuring a second discharging time associated with the discharging. The method further includes comparing a ratio between the first discharging time and the second discharging time with a predefined threshold, and detecting a fault based on the comparing.

Abstract: A switched-mode power converter includes an inductive storage element and a cascode circuit. The cascode circuit includes a double-gate field effect transistor. A switchable load path of the double-gate field effect transistor is electrically connected in series with the inductive storage element.

Abstract: An integrated semiconductor device is provided. According to an embodiment, the integrated semiconductor device includes a semiconductor body having a first surface with a normal direction defining a vertical direction, an opposite surface, a first area including a vertical power field-effect transistor structure, a second area including a three-terminal step-down level-shifter, and a third area including a three-terminal step-up level-shifter. A terminal of the vertical power field-effect transistor structure is electrically connected with one of the three-terminal step-down level-shifter and the three-terminal step-up level-shifter.

Abstract: The invention relates to a module for a heat pump, comprising an adsorption-desorption region, wherein in the region a bundle of pipes through which fluid can flow is arranged and a housing encloses the pipe bundle and a movable working medium in a sealing manner, wherein a supporting structure forms a mechanical support of a wall of the housing against the action of an external pressure.

Abstract: A switched-mode power converter includes an inductive storage element and a cascode circuit. The cascode circuit includes a double-gate field effect transistor. A switchable load path of the double-gate field effect transistor is electrically connected in series with the inductive storage element.

Abstract: A power transistor has a semiconductor body with a bottom side and top side spaced distant from the bottom side in a vertical direction. The semiconductor body includes a plurality of transistor cells, a source zone of a first conduction type, a body zone of a second conduction type, a drift zone of the first conduction type, a drain zone, and a temperature sensor diode having a pn-junction between an n-doped cathode zone and a p-doped anode zone. The power transistor also has a drain contact terminal on the top side, a source contact terminal on the bottom side, a gate contact terminal, and a temperature sense contact terminal on the top side. Depending on the first and second conduction types the anode or cathode zone is electrically connected to the source contact terminal and the other diode zone is electrically connected to the temperature sense contact terminal.

Abstract: The invention relates to the discovery and characterization of mannan binding lectin-associated serine protease-2 (MASP-2), a new serine protease that acts in the MBLectin complement fixation pathway.

Abstract: A testing device in accordance with various embodiments may include: a plurality of first terminals configured to be connected to a plurality of devices-under-test, wherein each first terminal of the plurality of first terminals may be configured to be connected to a respective device-under-test of the plurality of devices-under-test; a signal interface configured to be connected to a tester; and a circuit configured to exchange an identical first signal with each device-under-test of the plurality of devices-under-test through a respective first terminal of the plurality of first terminals, and to exchange at least one interface signal with the tester through the signal interface.

Abstract: The invention relates to the discovery and characterization of mannan binding lectin-associated serine protease-2 (MASP-2), a new serine protease that acts in the MBLectin complement fixation pathway.