Abstract: A surface light guide has a radiation exit area extending along a main extension plane of the surface light guide and is provided for laterally coupling radiation. The surface light guide includes scattering locations for scattering the coupled radiation. The surface light guide includes a first boundary surface and a second boundary surface which delimit the light conductance of the coupled-in radiation in the vertical direction. A first layer and a second layer are formed on each other in the vertical direction between the first boundary surface and the second boundary surface. Further disclosed are a planar emitter including at least one surface light guide.

Abstract: A light emitting device including a light emitting diode having a semiconductor body that generates electromagnetic radiation; a converter element downstream of the first light emitting diode which converts at least part of the electromagnetic radiation into first color light; a second light emitting diode having a semiconductor body that generates light of the first color; a radiation exit area from which the first color light emerges; and a drive circuit operating the second light emitting diode, wherein the converter element contains at least one luminescence conversion material that emits the first color light, as the operating duration of the first light emitting diode increases, intensity of the first color light emitted by the converter element decreases, the drive circuit controls the second light emitting diode dependent on at least one of measurement values: intensity of the first color light emitted by the converter element, temperature of the converter element, operating duration of the first ligh

Abstract: An optoelectronic semiconductor device includes at least one radiation-emitting and/or radiation-receiving semiconductor chip including a radiation passage surface and a mounting surface opposite the radiation passage surface, wherein the mounting surface includes a first electrical contact structure and a second electrical contact structure electrically insulated from the first electrical contact structure, and wherein the radiation passage surface is free of contact structures, a reflective sheath surrounding the at least one semiconductor chip at least in sections, and a protective sheath surrounding the at least one semiconductor chip and/or the reflective sheath at least in sections.

Abstract: For semiconductor chips using thin film technology, an active layer sequence is applied to a growth substrate, on which a reflective electrically conductive contact material layer is then formed. The active layer sequence is patterned to form active layer stacks, and reflective electrically conductive contact material layer is patterned to be located on each active layer stack. Then, a flexible, electrically conductive foil is applied to the contact material layers as an auxiliary carrier layer, and the growth substrate is removed.

Abstract: An optoelectronic semiconductor device includes a first light source that emits green, white or white-green light and includes a semiconductor chip that emits in the blue spectral range, and a first conversion element attached directly to the semiconductor chip, a second light source that emits red light, having a semiconductor chip, that emits in a blue spectral range, and having a second conversion element attached directly to the semiconductor chip, and/or having a semiconductor chip that emits in a red spectral range, a third light source that emits blue light and has a semiconductor chip emitting in the blue spectral range, and a filler body having a matrix material into which a conversion agent is embedded, wherein the filler body is disposed downstream of the light sources collectively.

Abstract: Presented is a method for producing an optoelectronic component. The method includes separating a semiconductor layer based on a III-V-compound semiconductor material from a substrate by irradiation with a laser beam having a plateau-like spatial beam profile, where individual regions of the semiconductor layer are irradiated successively.

Abstract: Presented is a method for producing an optoelectronic component. The method includes separating a semiconductor layer based on a III-V-compound semiconductor material from a substrate by irradiation with a laser beam having a plateau-like spatial beam profile, where individual regions of the semiconductor layer are irradiated successively.

Abstract: A surface light guide includes a radiation exit area running along a main extension plane of the surface light guide and includes a light guiding region, which has scattering locations and a coating arranged on a first main area of the light guiding region, wherein radiation coupled in along the main extension plane impinging on the first main area after scattering at the scattering locations has an excessively increased radiation component and the coating reduces in a targeted manner an exit of the excessively increased radiation component from the radiation exit area.

Abstract: A method for producing a semiconductor component, in which a semiconductor layer is separated from a substrate by irradiation with laser pulses, the pulse duration of the laser pulses being less than or equal to 10 ns. The laser pulses have a spatial beam profile with a flank slope is chosen to be gentle enough to prevent cracks in the semiconductor layer that arise as a result of thermally induced lateral stresses during the separation of semiconductor layer and substrate.

Abstract: A surface light guide has a radiation exit area extending along a main extension plane of the surface light guide and is provided for laterally coupling radiation. The surface light guide includes scattering locations for scattering the coupled radiation. The surface light guide includes a first boundary surface and a second boundary surface which delimit the light conductance of the coupled-in radiation in the vertical direction. A first layer and a second layer are formed on each other in the vertical direction between the first boundary surface and the second boundary surface. Further disclosed are a planar emitter including at least one surface light guide.

Abstract: The invention relates to a surface light source with a lighting surface that includes at least one semiconductor body that emits electromagnetic radiation from its front side during operation. Decoupling structures are suitable for producing a local variation of the light density on the lighting surface, so that the light density is increased in at least one illumination area with respect to a background area.

Abstract: A luminescence diode arrangement includes a first luminescence diode chip, a second luminescence diode chip and a luminescence conversion element, wherein the first luminescence diode chip emits blue light, the second luminescence diode chip contains a semiconductor layer sequence that emits greens light, the luminescence conversion element converts part of the blue light emitted by the first luminescence diode chip into red light, and the luminescence diode arrangement emits mixed light containing blue light of the first luminescence diode chip, green light of the second luminescence diode chip and red light of the luminescence conversion element.

Abstract: A light emitting device including a light emitting diode having a semiconductor body that generates electromagnetic radiation; a converter element downstream of the first light emitting diode which converts at least part of the electromagnetic radiation into first color light; a second light emitting diode having a semiconductor body that generates light of the first color; a radiation exit area from which the first color light emerges; and a drive circuit operating the second light emitting diode, wherein the converter element contains at least one luminescence conversion material that emits the first color light, as the operating duration of the first light emitting diode increases, intensity of the first color light emitted by the converter element decreases, the drive circuit controls the second light emitting diode dependent on at least one of measurement values: intensity of the first color light emitted by the converter element, temperature of the converter element, operating duration of the first ligh

Abstract: A method for micropatterning a radiation-emitting surface of a semiconductor layer sequence for a thin-film light-emitting diode chip, wherein the semiconductor layer sequence is grown on a substrate, a mirror layer is formed or applied on the semiconductor layer sequence, which reflects back into the semiconductor layer sequence at least part of a radiation that is generated in the semiconductor layer sequence during the operation thereof and is directed toward the mirror layer, the semiconductor layer sequence is separated from the substrate, and a separation surface of the semiconductor layer sequence, from which the substrate is separated, is etched by an etchant which predominantly etches at crystal defects and selectively etches different crystal facets at the separation surface.

Abstract: A method of producing an optoelectronic component, comprising the method steps: A) providing a growth substrate (1); B) growing at least one semiconductor layer (2) epitaxially, to produce an operationally active zone; C) applying a metallic mirror layer (3) to the semiconductor layer (2); D) applying at least one contact layer (8) for electronic contacting of the component; E) detaching the growth substrate (1) from the semiconductor layer (2), so exposing a surface of the semiconductor layer (2); and F) structuring the semiconductor layer (2) by means of an etching method from the side of the surface which was exposed in method step E).

Abstract: A method for micropatterning a radiation-emitting surface of a semiconductor layer sequence for a thin-film light-emitting diode chip, wherein the semiconductor layer sequence is grown on a substrate, a mirror layer is formed or applied on the semiconductor layer sequence, which reflects back into the semiconductor layer sequence at least part of a radiation that is generated in the semiconductor layer sequence during the operation thereof and is directed toward the mirror layer, the semiconductor layer sequence is separated from the substrate, and a separation surface of the semiconductor layer sequence, from which the substrate is separated, is etched by an etchant which predominantly etches at crystal defects and selectively etches different crystal facets at the separation surface.

Abstract: The invention provides a process for preparing vinyl chloride-vinyl acetate copolymers in the form of their solid resins by means of free-radically initiated suspension polymerization in aqueous medium of 70% to 90% by weight of vinyl chloride, 10% to 30% by weight of vinyl acetate and, if desired, further comonomers copolymerizable therewith, characterized in that 0.1% to 5% by weight of a vinyl acetate-vinyl chloride copolymer soluble in ethyl acetate is introduced as an initial charge, the amounts in % by weight being based in each case on the total weight of the comonomers.

Abstract: A method for micropatterning a radiation-emitting surface of a semiconductor layer sequence for a thin-film light-emitting diode chip. The semiconductor layer sequence is grown on a substrate. A mirror layer is formed or applied on the semiconductor layer sequence, which reflects back into the semiconductor layer sequence at least part of a radiation that is generated in the semiconductor layer sequence during the operation thereof and is directed toward the mirror layer. The semiconductor layer sequence is separated from the substrate by means of a lift-off method, in which a separation zone in the semiconductor layer sequence is at least partly decomposed in such a way that anisotropic residues of a constituent of the separation zone, in particular a metallic constituent of the separation layer, remain at the separation surface of the semiconductor layer sequence, from which the substrate is separated.

Abstract: A process for the preparation of epoxy-modified vinyl chloride-vinyl ester copolymers in the form of the solid resins involves aqueous, free radical polymerization of a mixture comprising a) from 50 to 90% by weight of vinyl chloride, b) from 5 to 25% by weight of epoxide-containing vinyl monomers and c) from 5 to 25% by weight of one or more vinyl esters of straight-chain or branched alkylcarboxylic acids having 1 to 18 carbon atoms, d) from 0 to 40% by weight of further comonomers copolymerizable with a), b) and c), the data in % by weight summing to 100% by weight, and subsequent drying of the aqueous dispersions obtained thereby, polymerization being effected by means of suspension polymerization in the presence of aldehyde regulators.

Abstract: For semiconductor chips using thin film technology, an active layer sequence is applied to a growth substrate, on which a reflective electrically conductive contact material layer is then formed. The active layer sequence is patterned to form active layer stacks, and reflective electrically conductive contact material layer is patterned to be located on each active layer stack. Then, a flexible, electrically conductive foil is applied to the contact material layers as an auxiliary carrier layer, and the growth substrate is removed.