Abstract: Semiconductor chip which emits electromagnetic radiation, and method for fabricating it. To improve the light yield of semiconductor chips which emit electromagnetic radiation, a textured reflection surface (131) is integrated on the p-side of a semiconductor chip. The semiconductor chip has an epitaxially produced semiconductor layer stack (1) based on GaN, which comprises an n-conducting semiconductor layer (11), a p-conducting semiconductor layer (13) and an electromagnetic radiation generating region (12) which is arranged between these two semiconductor layers (11, 13). The surface of the p-conducting semiconductor layer (13) which faces away from the radiation-generating region (12) is provided with three-dimensional pyramid-like structures (15). A mirror layer (40) is arranged over the whole of this textured surface. A textured reflection surface (131) is formed between the mirror layer (40) and the p-conducting semiconductor layer (13).

Abstract: For semiconductor chips (1) using thin film technology, an active layer sequence (20) is applied to a growth substrate (3), on which a reflective electrically conductive contact material layer (40) is then formed. The active layer sequence is patterned to form active layer stacks (2), and reflective electrically conductive contact material layer (40) is patterned to be located on each active layer stack (2). Then, a flexible, electrically conductive foil (6) is applied to the contact material layers as an auxiliary carrier layer, and the growth substrate is removed.

Abstract: A process for the preparation of epoxy-modified vinyl chloride-vinyl ester copolymers in the form of the solid resins involves aqueous, free radical polymerization of a mixture comprising a) from 50 to 90% by weight of vinyl chloride, b) from 5 to 25% by weight of epoxide-containing vinyl monomers and c) from 5 to 25% by weight of one or more vinyl esters of straight-chain or branched alkylcarboxylic acids having 1 to 18 carbon atoms, d) from 0 to 40% by weight of further comonomers copolymerizable with a), b) and c), the data in % by weight summing to 100% by weight, and subsequent drying of the aqueous dispersions obtained thereby, polymerization being effected by means of suspension polymerization in the presence of aldehyde regulators.

Abstract: A process for the preparation of vinyl chloride copolymers involves free radical suspension polymerization or emulsion polymerization of a mixture of vinyl chloride, epoxide-containing vinyl monomers and further comonomers copolymerizable therewith, wherein a) from 49.5 to 90% by weight of vinyl chloride, b) from 0.01 to 0.7% by weight of epoxide-containing vinyl monomers and c) from 9.5 to 50% by weight of further comonomers copolymerizable with a) and b) are polymerized, the data in % by weight totaling 100% by weight, and from 0.001 to 0.1% by weight of one or more aliphatic or alicyclic, saturated or unsaturated dicarboxylic acids having 1 to 10 carbon atoms, or aliphatic and alicyclic, saturated and unsaturated hydroxymono-, hydroxydi- and hydroxytricarboxylic acids having 3 to 10 carbon atoms and 1 to 4 hydroxyl groups are added during or after the polymerization, and the vinyl chloride copolymer is isolated as a solid resin.

Abstract: A method for producing a semiconductor component, in particular a thin-film component, a semiconductor layer being separated from a substrate by irradiation with a laser beam having a plateaulike spatial beam profile. Furthermore, the semiconductor layer, prior to separation, is applied to a carrier with an adapted thermal expansion coefficient. The method is suitable in particular for semiconductor layers containing a nitride compound semiconductor.

Abstract: An electrical contact for an optoelectronic device which includes a mirror layer (2) of a metal or a metal alloy, a protective layer (3), which serves for reducing the corrosion of the mirror layer (2), a barrier layer (4), a coupling layer (5), and a solder layer (8). A contact of this type is distinguished by high reflectivity, good ohmic contact with respect to the semiconductor, good adhesion on the semiconductor and good adhesion of the layers forming the contact with one another, good thermal stability, high stability with respect to environmental influences, and also solderability and patternability.

Abstract: A method is provided for fabricating a useful layer containing at least one semiconductor layer, in which the useful layer is separated from a carrier. In this case, the useful layer is applied to the carrier and an auxiliary carrier is applied to that side of the useful layer that is remote from the carrier by a connecting layer at a joining temperature. Afterward, the carrier is stripped away at a temperature that is greater than or equal to the joining temperature and is less than the melting point of the connecting layer. At least a part of the useful layer together with the auxiliary carrier is removed from the carrier.

Abstract: A radiation-emitting semiconductor component having a semiconductor body (1), which has an active zone (2), in which, for the purpose of electrical contact connection, a patterned contact layer (3) is applied on a surface of the semiconductor body. Interspaces (4) are distributed over the contact layer (3) and are provided for the purpose of forming free areas (5) on the surface which are not covered by the contact layer (3). The free areas (5) are covered with a mirror (6). The separation of the two functions of contact connection and reflection makes it possible to achieve a particularly high performance of the component.

Abstract: Semiconductor chip which emits electromagnetic radiation, and method for fabricating it. To improve the light yield of semiconductor chips which emit electromagnetic radiation, a textured reflection surface (131) is integrated on the p-side of a semiconductor chip. The semiconductor chip has an epitaxially produced semiconductor layer stack (1) based on GaN, which comprises an n-conducting semiconductor layer (11), a p-conducting semiconductor layer (13) and an electromagnetic radiation generating region (12) which is arranged between these two semiconductor layers (11, 13). The surface of the p-conducting semiconductor layer (13) which faces away from the radiation-generating region (12) is provided with three-dimensional pyramid-like structures (15). A mirror layer (40) is arranged over the whole of this textured surface. A textured reflection surface (131) is formed between the mirror layer (40) and the p-conducting semiconductor layer (13).

Abstract: A radiation-emitting semiconductor component has a semiconductor body containing a nitride compound semiconductor, and a contact metallization layer disposed on a surface of the semiconductor body. In this case, the contact metallization layer is covered with a radiation-transmissive, electrically conductive contact layer. The radiation generated is coupled out through the contact metallization layer or through openings in the contact metallization layer.

Abstract: A method is provided for fabricating a useful layer containing at least one semiconductor layer, in which the useful layer is separated from a carrier. In this case, the useful layer is applied to the carrier and an auxiliary carrier is applied to that side of the useful layer that is remote from the carrier by a connecting layer at a joining temperature. Afterward, the carrier is stripped away at a temperature that is greater than or equal to the joining temperature and is less than the melting point of the connecting layer. At least a part of the useful layer together with the auxiliary carrier is removed from the carrier.