Patents by Inventor Stephan Wieber
Stephan Wieber has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9234281Abstract: The invention relates to a liquid-phase method for the thermal production of silicon layers on a substrate, wherein at least one higher silicon that can be produced from at least one hydridosilane of the generic formula SiaH2a+2 (with a=3-10) being applied to a substrate and then being thermally converted to a layer that substantially consists of silicon, the thermal conversion of the higher silane proceeding at a temperature of 500-900° C. and a conversion time of ?5 minutes. The invention also relates to silicon layers producible according to said method and to their use.Type: GrantFiled: November 10, 2010Date of Patent: January 12, 2016Assignee: Evonik Degussa GmbHInventors: Stephan Wieber, Matthias Patz, Reinhard Carius, Torsten Bronger, Michael Cölle
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Publication number: 20150329680Abstract: The present invention provides processes for preparing carbon-containing hydridosilanes, in which an optionally boron- or phosphorus-doped hydridosilane is reacted without catalyst and reducing agent with at least one carbon source selected from linear, branched or cyclic carbosilanes, halogenated hydrocarbons, carbenes, alkyl azides, diazomethane, dimethyl sulphate or alcohols, the carbon-containing hydridosilane oligomers obtainable by the process and the use thereof.Type: ApplicationFiled: October 31, 2013Publication date: November 19, 2015Applicant: EVONIK INDUSTRIES AGInventors: Stephan TRAUT, Stephan WIEBER, Matthias PATZ, Michael COELLE, Harald STUEGER, Christoph WALKNER
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Patent number: 9017630Abstract: The invention relates to a method for producing hydridosilanes from halosilanes by a) reacting i) at least one halosilane of the generic formula SinX2n+2 (with n?3 and X?F, Cl, Br and/or I) with ii) at least one catalyst of the generic formula NRR'aR?bYc with a=0 or 1, b=0 or 1, and c=0 or 1, and formula (I), wherein aa) R, R? and/or R? are —C1-C12 alkyl, —C1-C12 aryl, —C1-C12 aralkyl, —C1-C12 aminoalkyl, —C1-C12 aminoaryl, —C1-C12 aminoaralkyl, and/or two or three groups R, R? and R? (if c=0) together form a cyclic or bicyclic, heteroaliphatic or heteroaromatic system including N, with the proviso that at least one group R, R? or R? is unequal —CH3 and/or wherein bb) R and R? and/or R?' (if c=1) are —C1-C12 alkylene, —C1-C12 arylene, —C1-C12 aralkylene, —C1-C12 heteroalkylene, —C1-C12 heteroarylene, —C1-C12 heteroaralkylene and/or —N?, or cc) (if a=b=c=0) R??C-R?? (with R???—C1-C10 alkyl, —C1-C10 aryl and/or —C1-C10 aralkyl), while forming a mixture comprising at least one halosilane of the generic formula SType: GrantFiled: November 8, 2010Date of Patent: April 28, 2015Assignee: Evonik Degussa GmbHInventors: Stephan Wieber, Matthias Patz, Martin Trocha, Hartwig Rauleder, Ekkehard Mueh, Harald Stueger, Christoph Walkner
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Patent number: 9011812Abstract: The present invention relates to a process for preparing hydridosilanes from halosilanes, in which a) i) at least one halosilane of the generic formula SinX2n+2 (where n?3 and X=F, Cl, Br and/or I) and ii) at least one catalyst are converted to form a mixture comprising at least one halosilane of the generic formula SimX2m+2 (where m>n and X=F, Cl, Br and/or I) and SiX4 (where X=F, Cl, Br and/or I), and b) the at least one halosilane of the generic formula SimX2m+2 is hydrogenated to form a hydridosilane of the generic formula SimH2m+2, the hydridosilane of the generic formula SimH2m+2 is separated from partially halogenated hydridosilanes of the general formula SimH(2m+2?y)Xy (where 1<y<2m+1), and the separated partially halogenated hydridosilanes of the general formula SimH(2m+2?y)Xy (where 1<y<2m+1) are hydrogenated again.Type: GrantFiled: December 20, 2011Date of Patent: April 21, 2015Assignee: Evonik Degussa GmbHInventors: Nicole Brausch, Jens Haubrock, Udo Knippenberg, Thorsten Schwaertzke, Joerg Zoellner, Stephan Wieber
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Patent number: 8969610Abstract: The present invention relates to a method for oligomerizing hydridosilanes, wherein a composition comprising substantially at least one non-cyclic hydridosilane having a maximum of 20 silicon atoms as the hydridosilane is thermally converted at temperatures below 235° C. in the absence of a catalyst, the oligomers that can be produced according to the method, and the use thereof.Type: GrantFiled: February 16, 2011Date of Patent: March 3, 2015Assignee: Evonik Degussa GmbHInventors: Stephan Wieber, Matthias Patz, Bernhard Stuetzel, Michael Coelle, Nicole Brausch, Janette Klatt, Jutta Hessing
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Patent number: 8889092Abstract: The present invention relates to a rapid and metal-free process for preparing high order hydridosilane compounds from low order hydridosilane compounds, wherein at least one low order hydridosilane compound (I) is thermally reacted in the presence of at least one hydridosilane compound (II) having a weight average molecular weight of at least 500 g/mol, to the hydridosilane compounds obtainable by the process and to their use.Type: GrantFiled: September 27, 2011Date of Patent: November 18, 2014Assignee: Evonik Degussa GmbHInventors: Stephan Wieber, Matthias Patz, Jutta Hessing, Janette Klatt
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Publication number: 20130328175Abstract: The present invention relates to a method for the hydrogen passivation of semiconductor layers, wherein the passivation is effected by using an arc plasma source, to the passivated semiconductor layers produced according to the method, and to the use thereof.Type: ApplicationFiled: November 11, 2011Publication date: December 12, 2013Applicant: Evonik Degussa GmbHInventors: Patrik Stenner, Stephan Wieber, Michael Cölle, Matthias Patz, Reinhard Carius, Torsten Bronger
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Publication number: 20130259791Abstract: The present invention relates to a process for preparing hydridosilanes from halosilanes, in which a) i) at least one halosilane of the generic formula SinX2n+2 (where n?3 and X=F, Cl, Br and/or I) and ii) at least one catalyst are converted to form a mixture comprising at least one halosilane of the generic formula SimX2m+2 (where m>n and X=F, Cl, Br and/or I) and SiX4 (where X=F, Cl, Br and/or I), and b) the at least one halosilane of the generic formula SimX2m+2 is hydrogenated to form a hydridosilane of the generic formula SimH2m+2, the hydridosilane of the generic formula SimH2m+2 is separated from partially halogenated hydridosilanes of the general formula SimH(2m+2?y)Xy (where 1<y<2m+1), and the separated partially halogenated hydridosilanes of the general formula SimH(2m+2?y)Xy (where 1<y<2m+1) are hydrogenated again.Type: ApplicationFiled: December 20, 2011Publication date: October 3, 2013Applicant: Evonik Degussa GmbHInventors: Nicole Brausch, Jens Haubrock, Udo Knippenberg, Thorsten Schwaertzke, Joerg Zoellner, Stephan Wieber
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Publication number: 20130259790Abstract: The invention relates to a process for preparing higher halosilanes by disproportionation of lower halosilanes. The invention further relates to a process for preparing higher hydridosilanes from the higher halosilanes prepared by disproportionation. The invention further relates to mixtures containing at least one higher halosilane or at least one higher hydridosilane prepared by the process described. Finally, the invention relates to the use of such a mixture containing at least one higher hydridosilane for producing electronic or optoelectronic component layers or for producing silicon-containing layers.Type: ApplicationFiled: December 2, 2011Publication date: October 3, 2013Applicant: Evonik Degussa GmbHInventors: Stephan Wieber, Matthias Patz, Harald Stuger, Christoph Walkner
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Publication number: 20130240892Abstract: The present invention relates to a process for conversion of semiconductor layers, especially for conversion of amorphous to crystalline silicon layers, in which the conversion is effected by treating the semiconductor layer with a plasma which is generated by a plasma source equipped with a plasma nozzle (1). The present invention further relates to semiconductor layers produced by the process, to electronic and optoelectronic products comprising such semiconductor layers, and to a plasma source for performance of the process according to the invention.Type: ApplicationFiled: November 10, 2011Publication date: September 19, 2013Applicant: EVONIK DEGUSSA GmbHInventors: Patrik Stenner, Matthias Patz, Michael Coelle, Stephan Wieber
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Publication number: 20130183223Abstract: The present invention relates to a rapid and metal-free process for preparing high order hydridosilane compounds from low order hydridosilane compounds, wherein at least one low order hydridosilane compound (I) is thermally reacted in the presence of at least one hydridosilane compound (II) having a weight average molecular weight of at least 500 g/mol, to the hydridosilane compounds obtainable by the process and to their use.Type: ApplicationFiled: September 27, 2011Publication date: July 18, 2013Applicant: Evonik Degussa GmbHInventors: Stephan Wieber, Matthias Patz, Jutta Hessing, Janette Klatt
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Publication number: 20130168824Abstract: The invention relates to a process for producing p-doped silicon layers, especially those silicon layers which are produced from liquid silane-containing formulations. The invention further relates to a substrate coated with a p-doped silicon layer. The invention additionally relates to the use of particular dopants based on boron compounds for p-doping of a silicon layer.Type: ApplicationFiled: August 19, 2011Publication date: July 4, 2013Applicant: Evonik Degussa GmbHInventors: Stephan Wieber, Matthias Patz, Harald Stueger, Jasmin Lehmkuhl
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Publication number: 20120291665Abstract: The present invention relates to a method for oligomerizing hydridosilanes, wherein a composition comprising substantially at least one non-cyclic hydridosilane having a maximum of 20 silicon atoms as the hydridosilane is thermally converted at temperatures below 235° C. in the absence of a catalyst, the oligomers that can be produced according to the method, and the use thereof.Type: ApplicationFiled: February 16, 2011Publication date: November 22, 2012Applicant: Evonik Degussa GmbHInventors: Stephan Wieber, Matthias Patz, Bernhard Stuetzel, Michael Coelle, Nicole Brausch, Janette Klatt, Jutta Hessing
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Publication number: 20120273805Abstract: The invention relates to a liquid-phase method for the thermal production of silicon layers on a substrate, wherein at least one higher silicon that can be produced from at least one hydridosilane of the generic formula SiaH2a+2 (with a=3-10) being applied to a substrate and then being thermally converted to a layer that substantially consists of silicon, the thermal conversion of the higher silane proceeding at a temperature of 500-900° C. and a conversion time of ?5 minutes. The invention also relates to silicon layers producible according to said method and to their use.Type: ApplicationFiled: November 10, 2010Publication date: November 1, 2012Applicant: Evonik Degussa GmbHInventors: Stephan Wieber, Matthias Patz, Reinhard Carius, Torsten Bronger, Michael Cölle
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Publication number: 20120214005Abstract: The invention relates to a method for producing hydridosilanes from halosilanes by a) reacting i) at least one halosilane of the generic formula SinX2n+2 (with n?3 and X?F, Cl, Br and/or I) with ii) at least one catalyst of the generic formula NRR'aR?bYc with a=0 or 1, b=0 or 1, and c=0 or 1, and formula (I), wherein aa) R, R? and/or R? are —C1-C12 alkyl, —C1-C12 aryl, —C1-C12 aralkyl, —C1-C12 aminoalkyl, —C1-C12 aminoaryl, —C1-C12 aminoaralkyl, and/or two or three groups R, R? and R? (if c=0) together form a cyclic or bicyclic, heteroaliphatic or heteroaromatic system including N, with the proviso that at least one group R, R? or R? is unequal —CH3 and/or wherein bb) R and R? and/or R?' (if c=1) are —C1-C12 alkylene, —C1-C12 arylene, —C1-C12 aralkylene, —C1-C12 heteroalkylene, —C1-C12 heteroarylene, —C1-C12 heteroaralkylene and/or —N?, or cc) (if a=b=c=0) R??C-R?? (with R???—C1-C10 alkyl, —C1-C10 aryl and/or —C1-C10 aralkyl), while forming a mixture comprising at least one halosilane of the generic formula SType: ApplicationFiled: November 8, 2010Publication date: August 23, 2012Applicant: Evonik Degussa GmbHInventors: Stephan Wieber, Matthias Patz, Martin Trocha, Hartwig Rauleder, Ekkehard Mueh, Harald Stueger, Christoph Walkner