Patents by Inventor Stephane Monfray
Stephane Monfray has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12293981Abstract: The present disclosure relates to an electronic circuit comprising a semiconductor substrate, radiofrequency switches corresponding to MOS transistors comprising doped semiconductor regions in the substrate, at least two metallization levels covering the substrate, each metallization level comprising a stack of insulating layers, conductive pillars topped by metallic tracks, at least two connection elements each connecting one of the doped semiconductor regions and formed by conductive pillars and conductive tracks of each metallization level. The electronic circuit further comprises, between the two connection elements, a trench crossing completely the stack of insulating layers of one metallization level and further crossing partially the stack of insulating layers of the metallization level the closest to the substrate, and a heat dissipation device adapted for dissipating heat out of the trench.Type: GrantFiled: April 29, 2022Date of Patent: May 6, 2025Assignees: STMicroelectronics (Crolles 2) SAS, STMicroelectronics International N.V.Inventors: Stephane Monfray, Siddhartha Dhar, Alain Fleury
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Patent number: 12038605Abstract: An embodiment sensor includes a hybrid waveguide. The hybrid waveguide includes a first dielectric optical waveguide lying on and in contact with a dielectric support layer; a first surface waveguide optically coupled to the first dielectric optical waveguide, parallel to the first dielectric optical waveguide, and lying on the dielectric support layer. The first surface waveguide has a lateral surface configured to guide a surface mode. The hybrid waveguide includes a cavity intended to be filled with a dielectric fluid, separating laterally the first dielectric optical waveguide from the lateral surface of the first surface waveguide.Type: GrantFiled: October 28, 2021Date of Patent: July 16, 2024Assignees: UNIVERSITE CLAUDE BERNARD LYON 1, CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, INSTITUT NATIONAL DES SCIENCES APPLIQUEES DE LYON, STMicroelectronics (Crolles 2) SASInventors: Michele Calvo, Stephane Monfray, Paul Charette, Guillaume Beaudin, Regis Orobtchouk
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Patent number: 11947202Abstract: The present disclosure relates to a method including the following steps: a) forming a waveguide from a first material, the waveguide being configured to guide an optical signal; b) forming a layer made of a second material that is electrically conductive and transparent to a wavelength of the optical signal, steps a) and b) being implemented such that the layer made of the second material is in contact with at least one of the faces of the waveguide, or is separated from the at least one of the faces by a distance of less than half, preferably less than a quarter, of the wavelength of the optical signal. The application further relates to a phase modulator, in particular obtained by such a method.Type: GrantFiled: April 3, 2023Date of Patent: April 2, 2024Assignee: STMicroelectronics (Crolles 2) SASInventors: Sébastien Cremer, Frédéric Boeuf, Stephane Monfray
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Patent number: 11822164Abstract: An electro-optical phase modulator includes a waveguide made from a stack of strips. The stack includes a first strip made of a doped semiconductor material of a first conductivity type, a second strip made of a conductive material or of a doped semiconductor material of a second conductivity type, and a third strip made of a doped semiconductor material of the first conductivity type. The second strip is separated from the first strip by a first interface layer made of a dielectric material, and the third strip is separated from the second strip by a second interface layer made of a dielectric material.Type: GrantFiled: September 1, 2020Date of Patent: November 21, 2023Assignee: STMicroelectronics (Crolles 2) SASInventor: Stephane Monfray
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Publication number: 20230236446Abstract: The present disclosure relates to a method including the following steps: a) forming a waveguide from a first material, the waveguide being configured to guide an optical signal; b) forming a layer made of a second material that is electrically conductive and transparent to a wavelength of the optical signal, steps a) and b) being implemented such that the layer made of the second material is in contact with at least one of the faces of the waveguide, or is separated from the at least one of the faces by a distance of less than half, preferably less than a quarter, of the wavelength of the optical signal. The application further relates to a phase modulator, in particular obtained by such a method.Type: ApplicationFiled: April 3, 2023Publication date: July 27, 2023Inventors: Sébastien Cremer, Frédéric Boeuf, Stephane Monfray
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Patent number: 11698296Abstract: A light sensor includes a semiconductor substrate supporting a number of pixels. Each pixel includes a photoconversion zone extending in the substrate between a front face and a back face of the substrate. An optical diffraction grating is arranged over the back face of the substrate at a position facing the photoconversion zone of the pixel. For at least two different pixels of the light sensor, the optical diffraction gratings have different pitches. Additionally, the optical grating of each pixel is surrounded by an opaque wall configured to absorb at operating wavelengths of the sensor.Type: GrantFiled: September 17, 2020Date of Patent: July 11, 2023Assignees: STMicroelectronics (Crolles 2) SAS, STMicroelectronics SAInventors: Stephane Monfray, Olivier Le Neel, Frederic Boeuf
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Patent number: 11644697Abstract: The present disclosure relates to a method comprising the following steps: a) forming a waveguide from a first material, the waveguide being configured to guide an optical signal; b) forming a layer made of a second material that is electrically conductive and transparent to a wavelength of the optical signal, steps a) and b) being implemented such that the layer made of the second material is in contact with at least one of the faces of the waveguide, or is separated from the at least one of the faces by a distance of less than half, preferably less than a quarter, of the wavelength of the optical signal. The application further relates to a phase modulator, in particular obtained by such a method.Type: GrantFiled: August 7, 2020Date of Patent: May 9, 2023Assignee: STMICROELECTRONICS (CROLLES 2) SASInventors: Sébastien Cremer, Frédéric Boeuf, Stephane Monfray
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Patent number: 11391624Abstract: A light sensor includes a first pixel and a second pixel. Each pixel has a photoconversion area. A band-stop Fano resonance filter is arranged over the first pixel. The second pixel includes no Fano resonance filter. Signals output from the first and second pixels are processed to determine information representative of the quantity of light received by the light sensor during an illumination phase in a rejection band of the band-stop Fano resonance filter.Type: GrantFiled: December 9, 2020Date of Patent: July 19, 2022Assignees: STMicroelectronics SA, STMicroelectronics (Crolles 2) SASInventors: Olivier Le Neel, Stephane Monfray
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Patent number: 11378827Abstract: A photonic device includes a first region having a first doping type, and a second region having a second doping type, where the first region and the second region contact to form a vertical PN junction. The first region includes a silicon germanium (SiGe) region having a gradual germanium concentration.Type: GrantFiled: October 29, 2020Date of Patent: July 5, 2022Assignee: STMICROELECTRONICS (CROLLES 2) SASInventors: Stephane Monfray, Frédéric Boeuf
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Publication number: 20220050246Abstract: An embodiment sensor includes a hybrid waveguide. The hybrid waveguide includes a first dielectric optical waveguide lying on and in contact with a dielectric support layer; a first surface waveguide optically coupled to the first dielectric optical waveguide, parallel to the first dielectric optical waveguide, and lying on the dielectric support layer. The first surface waveguide has a lateral surface configured to guide a surface mode. The hybrid waveguide includes a cavity intended to be filled with a dielectric fluid, separating laterally the first dielectric optical waveguide from the lateral surface of the first surface waveguide.Type: ApplicationFiled: October 28, 2021Publication date: February 17, 2022Inventors: Michele Calvo, Stephane Monfray, Paul Charette, Guillaume Beaudin, Regis Orobtchouk
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Publication number: 20210055579Abstract: The present disclosure relates to a method comprising the following steps: a) forming a waveguide from a first material, the waveguide being configured to guide an optical signal; b) forming a layer made of a second material that is electrically conductive and transparent to a wavelength of the optical signal, steps a) and b) being implemented such that the layer made of the second material is in contact with at least one of the faces of the waveguide, or is separated from the at least one of the faces by a distance of less than half, preferably less than a quarter, of the wavelength of the optical signal. The application further relates to a phase modulator, in particular obtained by such a method.Type: ApplicationFiled: August 7, 2020Publication date: February 25, 2021Inventors: Sébastien Cremer, Frédéric Boeuf, Stephane Monfray
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Publication number: 20210041727Abstract: A photonic device includes a first region having a first doping type, and a second region having a second doping type, where the first region and the second region contact to form a vertical PN junction. The first region includes a silicon germanium (SiGe) region having a gradual germanium concentration.Type: ApplicationFiled: October 29, 2020Publication date: February 11, 2021Inventors: Stephane Monfray, Frédéric Boeuf
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Patent number: 10823986Abstract: A photonic device includes a first region having a first doping type, and a second region having a second doping type, where the first region and the second region contact to form a vertical PN junction. The first region includes a silicon germanium (SiGe) region having a gradual germanium concentration.Type: GrantFiled: January 23, 2019Date of Patent: November 3, 2020Assignee: STMICROELECTRONICS (CROLLES 2) SASInventors: Stephane Monfray, Frédéric Boeuf
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Patent number: 10795189Abstract: An electro-optical phase modulator includes a waveguide made from a stack of strips. The stack includes a first strip made of a doped semiconductor material of a first conductivity type, a second strip made of a conductive material or of a doped semiconductor material of a second conductivity type, and a third strip made of a doped semiconductor material of the first conductivity type. The second strip is separated from the first strip by a first interface layer made of a dielectric material, and the third strip is separated from the second strip by a second interface layer made of a dielectric material.Type: GrantFiled: January 14, 2019Date of Patent: October 6, 2020Assignee: STMicroelectronics (Crolles 2) SASInventor: Stephane Monfray
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Patent number: 10794856Abstract: A detection stage of an electronic detection device, for example a pH meter, includes an insulating region that receives an element to be analyzed. The insulating region is positioned on a sensing conductive region. A biasing stage includes an electrically conductive region which is capacitively coupled to the conductive region. The electrically conductive region is formed in an uppermost metallization level along with a further conductive region. That further conductive region is electrically connected to the sensing conductive region by a via passing through an insulating layer which insulates the electrically conductive region from the sensing conductive region.Type: GrantFiled: February 13, 2019Date of Patent: October 6, 2020Assignee: STMicroelectronics (Crolles 2) SASInventors: Getenet Tesega Ayele, Stephane Monfray
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Patent number: 10741740Abstract: A thermo-electric generator includes a semiconductor membrane with a phononic structure containing at least one P-N junction. The membrane is suspended between a first support designed to be coupled to a cold thermal source and a second support designed to be coupled to a hot thermal source. The structure for suspending the membrane has an architecture allowing the heat flux to be redistributed within the plane of the membrane.Type: GrantFiled: July 27, 2018Date of Patent: August 11, 2020Assignee: STMicroelectronics (Crolles 2) SASInventors: Emmanuel Dubois, Jean-Francois Robillard, Stephane Monfray, Thomas Skotnicki
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Patent number: 10690947Abstract: In one aspect, a photonic device includes a first region having a first doping type, where the first region is divided into an upper portion made of silicon-germanium and a lower portion made of silicon. The device further includes a second region having a second doping type. The first region and the second region contact to form a vertical PN junction.Type: GrantFiled: January 23, 2019Date of Patent: June 23, 2020Assignee: STMICROELECTRONICS (CROLLES 2) SASInventors: Stephane Monfray, Frédéric Boeuf
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Patent number: 10684251Abstract: A dual gate ion sensitive field effect transistor (ISFET) includes a first bias voltage node coupled to a back gate of the ISFET and a second bias voltage node coupled to a control gate of the ISFET. A bias voltage generator circuit is configured to generate a back gate voltage having a first magnitude and a first polarity for application to the first bias voltage node. The bias voltage generator circuit is further configured to generate a control gate voltage having a second magnitude and a second polarity for application to the second bias voltage node. The second polarity is opposite the first polarity.Type: GrantFiled: June 23, 2017Date of Patent: June 16, 2020Assignee: STMicroelectronics (Crolles 2) SASInventors: Getenet Tesega Ayele, Stephane Monfray
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Publication number: 20190265518Abstract: In one aspect, a photonic device includes a first region having a first doping type, where the first region is divided into an upper portion made of silicon-germanium and a lower portion made of silicon. The device further includes a second region having a second doping type. The first region and the second region contact to form a vertical PN junction.Type: ApplicationFiled: January 23, 2019Publication date: August 29, 2019Inventors: Stephane Monfray, Frédéric Boeuf
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Publication number: 20190265519Abstract: A photonic device includes a first region having a first doping type, and a second region having a second doping type, where the first region and the second region contact to form a vertical PN junction. The first region includes a silicon germanium (SiGe) region having a gradual germanium concentration.Type: ApplicationFiled: January 23, 2019Publication date: August 29, 2019Inventors: Stephane Monfray, Frédéric Boeuf