Patents by Inventor Stephane Monfray

Stephane Monfray has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210172791
    Abstract: A light sensor includes a first pixel and a second pixel. Each pixel has a photoconversion area. A band-stop Fano resonance filter is arranged over the first pixel. The second pixel includes no Fano resonance filter. Signals output from the first and second pixels are processed to determine information representative of the quantity of light received by the light sensor during an illumination phase in a rejection band of the band-stop Fano resonance filter.
    Type: Application
    Filed: December 9, 2020
    Publication date: June 10, 2021
    Applicants: STMicroelectronics SA, STMicroelectronics (Crolles 2) SAS
    Inventors: Olivier LE NEEL, Stephane MONFRAY
  • Publication number: 20210088378
    Abstract: A light sensor includes a semiconductor substrate supporting a number of pixels. Each pixel includes a photoconversion zone extending in the substrate between a front face and a back face of the substrate. An optical diffraction grating is arranged over the back face of the substrate at a position facing the photoconversion zone of the pixel. For at least two different pixels of the light sensor, the optical diffraction gratings have different pitches. Additionally, the optical grating of each pixel is surrounded by an opaque wall configured to absorb at operating wavelengths of the sensor.
    Type: Application
    Filed: September 17, 2020
    Publication date: March 25, 2021
    Applicants: STMicroelectronics (Crolles 2) SAS, STMicroelectronics SA
    Inventors: Stephane MONFRAY, Olivier LE NEEL, Frederic BOEUF
  • Publication number: 20210055579
    Abstract: The present disclosure relates to a method comprising the following steps: a) forming a waveguide from a first material, the waveguide being configured to guide an optical signal; b) forming a layer made of a second material that is electrically conductive and transparent to a wavelength of the optical signal, steps a) and b) being implemented such that the layer made of the second material is in contact with at least one of the faces of the waveguide, or is separated from the at least one of the faces by a distance of less than half, preferably less than a quarter, of the wavelength of the optical signal. The application further relates to a phase modulator, in particular obtained by such a method.
    Type: Application
    Filed: August 7, 2020
    Publication date: February 25, 2021
    Inventors: Sébastien Cremer, Frédéric Boeuf, Stephane Monfray
  • Publication number: 20210041727
    Abstract: A photonic device includes a first region having a first doping type, and a second region having a second doping type, where the first region and the second region contact to form a vertical PN junction. The first region includes a silicon germanium (SiGe) region having a gradual germanium concentration.
    Type: Application
    Filed: October 29, 2020
    Publication date: February 11, 2021
    Inventors: Stephane Monfray, Frédéric Boeuf
  • Publication number: 20200400978
    Abstract: An electro-optical phase modulator includes a waveguide made from a stack of strips. The stack includes a first strip made of a doped semiconductor material of a first conductivity type, a second strip made of a conductive material or of a doped semiconductor material of a second conductivity type, and a third strip made of a doped semiconductor material of the first conductivity type. The second strip is separated from the first strip by a first interface layer made of a dielectric material, and the third strip is separated from the second strip by a second interface layer made of a dielectric material.
    Type: Application
    Filed: September 1, 2020
    Publication date: December 24, 2020
    Applicant: STMicroelectronics (Crolles 2) SAS
    Inventor: Stephane MONFRAY
  • Patent number: 10823986
    Abstract: A photonic device includes a first region having a first doping type, and a second region having a second doping type, where the first region and the second region contact to form a vertical PN junction. The first region includes a silicon germanium (SiGe) region having a gradual germanium concentration.
    Type: Grant
    Filed: January 23, 2019
    Date of Patent: November 3, 2020
    Assignee: STMICROELECTRONICS (CROLLES 2) SAS
    Inventors: Stephane Monfray, Frédéric Boeuf
  • Patent number: 10795189
    Abstract: An electro-optical phase modulator includes a waveguide made from a stack of strips. The stack includes a first strip made of a doped semiconductor material of a first conductivity type, a second strip made of a conductive material or of a doped semiconductor material of a second conductivity type, and a third strip made of a doped semiconductor material of the first conductivity type. The second strip is separated from the first strip by a first interface layer made of a dielectric material, and the third strip is separated from the second strip by a second interface layer made of a dielectric material.
    Type: Grant
    Filed: January 14, 2019
    Date of Patent: October 6, 2020
    Assignee: STMicroelectronics (Crolles 2) SAS
    Inventor: Stephane Monfray
  • Patent number: 10794856
    Abstract: A detection stage of an electronic detection device, for example a pH meter, includes an insulating region that receives an element to be analyzed. The insulating region is positioned on a sensing conductive region. A biasing stage includes an electrically conductive region which is capacitively coupled to the conductive region. The electrically conductive region is formed in an uppermost metallization level along with a further conductive region. That further conductive region is electrically connected to the sensing conductive region by a via passing through an insulating layer which insulates the electrically conductive region from the sensing conductive region.
    Type: Grant
    Filed: February 13, 2019
    Date of Patent: October 6, 2020
    Assignee: STMicroelectronics (Crolles 2) SAS
    Inventors: Getenet Tesega Ayele, Stephane Monfray
  • Patent number: 10741740
    Abstract: A thermo-electric generator includes a semiconductor membrane with a phononic structure containing at least one P-N junction. The membrane is suspended between a first support designed to be coupled to a cold thermal source and a second support designed to be coupled to a hot thermal source. The structure for suspending the membrane has an architecture allowing the heat flux to be redistributed within the plane of the membrane.
    Type: Grant
    Filed: July 27, 2018
    Date of Patent: August 11, 2020
    Assignee: STMicroelectronics (Crolles 2) SAS
    Inventors: Emmanuel Dubois, Jean-Francois Robillard, Stephane Monfray, Thomas Skotnicki
  • Patent number: 10690947
    Abstract: In one aspect, a photonic device includes a first region having a first doping type, where the first region is divided into an upper portion made of silicon-germanium and a lower portion made of silicon. The device further includes a second region having a second doping type. The first region and the second region contact to form a vertical PN junction.
    Type: Grant
    Filed: January 23, 2019
    Date of Patent: June 23, 2020
    Assignee: STMICROELECTRONICS (CROLLES 2) SAS
    Inventors: Stephane Monfray, Frédéric Boeuf
  • Patent number: 10684251
    Abstract: A dual gate ion sensitive field effect transistor (ISFET) includes a first bias voltage node coupled to a back gate of the ISFET and a second bias voltage node coupled to a control gate of the ISFET. A bias voltage generator circuit is configured to generate a back gate voltage having a first magnitude and a first polarity for application to the first bias voltage node. The bias voltage generator circuit is further configured to generate a control gate voltage having a second magnitude and a second polarity for application to the second bias voltage node. The second polarity is opposite the first polarity.
    Type: Grant
    Filed: June 23, 2017
    Date of Patent: June 16, 2020
    Assignee: STMicroelectronics (Crolles 2) SAS
    Inventors: Getenet Tesega Ayele, Stephane Monfray
  • Patent number: 10587131
    Abstract: The invention concerns a measurement unit including: an electric ambient energy recovery generator; an element of capacitive storage of the electric energy generated by the generator; an electric battery; a first branch coupling an output node of the generator to a first electrode of the capacitive storage element; a second branch coupling a first terminal of the battery to the first electrode of the capacitive storage element; and an active circuit capable of transmitting a radio event indicator signal each time the voltage across the capacitive storage element exceeds a first threshold, wherein, in operation, the capacitive storage element simultaneously receives a first charge current originating from the generator via the first branch and a second charge current originating from the battery via the second branch.
    Type: Grant
    Filed: May 1, 2018
    Date of Patent: March 10, 2020
    Assignees: Commissariat à I'Energie Atomique et aux Energies Alternatives, STMicroelectronics (Crolles 2) SAS, STMicroelectronics SA
    Inventors: Séverin Trochut, Stéphane Monfray, Sébastien Boisseau
  • Publication number: 20190265518
    Abstract: In one aspect, a photonic device includes a first region having a first doping type, where the first region is divided into an upper portion made of silicon-germanium and a lower portion made of silicon. The device further includes a second region having a second doping type. The first region and the second region contact to form a vertical PN junction.
    Type: Application
    Filed: January 23, 2019
    Publication date: August 29, 2019
    Inventors: Stephane Monfray, Frédéric Boeuf
  • Publication number: 20190265519
    Abstract: A photonic device includes a first region having a first doping type, and a second region having a second doping type, where the first region and the second region contact to form a vertical PN junction. The first region includes a silicon germanium (SiGe) region having a gradual germanium concentration.
    Type: Application
    Filed: January 23, 2019
    Publication date: August 29, 2019
    Inventors: Stephane Monfray, Frédéric Boeuf
  • Publication number: 20190250124
    Abstract: A detection stage of an electronic detection device, for example a pH meter, includes an insulating region that receives an element to be analyzed. The insulating region is positioned on a sensing conductive region. A biasing stage includes an electrically conductive region which is capacitively coupled to the conductive region. The electrically conductive region is formed in an uppermost metallization level along with a further conductive region. That further conductive region is electrically connected to the sensing conductive region by a via passing through an insulating layer which insulates the electrically conductive region from the sensing conductive region.
    Type: Application
    Filed: February 13, 2019
    Publication date: August 15, 2019
    Applicant: STMicroelectronics (Crolles 2) SAS
    Inventors: Getenet Tesega AYELE, Stephane MONFRAY
  • Publication number: 20190219847
    Abstract: An electro-optical phase modulator includes a waveguide made from a stack of strips. The stack includes a first strip made of a doped semiconductor material of a first conductivity type, a second strip made of a conductive material or of a doped semiconductor material of a second conductivity type, and a third strip made of a doped semiconductor material of the first conductivity type. The second strip is separated from the first strip by a first interface layer made of a dielectric material, and the third strip is separated from the second strip by a second interface layer made of a dielectric material.
    Type: Application
    Filed: January 14, 2019
    Publication date: July 18, 2019
    Applicant: STMicroelectronics (Crolles 2) SAS
    Inventor: Stephane MONFRAY
  • Patent number: 10312431
    Abstract: A method of manufacturing bistable strips having different curvatures, each strip including a plurality of portion of layers of materials, wherein at least one specific layer portion is deposited by a plasma spraying method in conditions different for each of the strips.
    Type: Grant
    Filed: February 27, 2015
    Date of Patent: June 4, 2019
    Assignees: STMICROELECTRONICS SA, STMICROELECTRONICS (CROLLES 2) SAS
    Inventors: Emilie Trioux, Pascal Ancey, Stephane Monfray, Thomas Skotnicki, Skandar Basrour, Paul Muralt
  • Patent number: 10298151
    Abstract: A power conversion device includes an enclosure containing one or more drops of a liquid. A capacitive electret transducer is coupled to the enclosure. In response to applied heat at a heating surface, the liquid vaporizes and then condenses on a flexible membrane of the capacitive electret transducer. The flexible membrane is displaced in response to the vaporization-condensation and the capacitive electret transducer generates an output current.
    Type: Grant
    Filed: August 18, 2014
    Date of Patent: May 21, 2019
    Assignees: STMicroelectronics (Crolles 2) SAS, STMicroelectronics SA, Commissariat a l'Energie Atomique et aux Energies Alternatives
    Inventors: Stephane Monfray, Christophe Maitre, Olga Kokshagina, Thomas Skotnicki, Ulrich Soupremanien
  • Publication number: 20180372679
    Abstract: A dual gate ion sensitive field effect transistor (ISFET) includes a first bias voltage node coupled to a back gate of the ISFET and a second bias voltage node coupled to a control gate of the ISFET. A bias voltage generator circuit is configured to generate a back gate voltage having a first magnitude and a first polarity for application to the first bias voltage node. The bias voltage generator circuit is further configured to generate a control gate voltage having a second magnitude and a second polarity for application to the second bias voltage node. The second polarity is opposite the first polarity.
    Type: Application
    Filed: June 23, 2017
    Publication date: December 27, 2018
    Applicant: STMicroelectronics (Crolles 2) SAS
    Inventors: Getenet Tesega Ayele, Stephane Monfray
  • Publication number: 20180358535
    Abstract: A thermo-electric generator includes a semiconductor membrane with a phononic structure containing at least one P-N junction. The membrane is suspended between a first support designed to be coupled to a cold thermal source and a second support designed to be coupled to a hot thermal source. The structure for suspending the membrane has an architecture allowing the heat flux to be redistributed within the plane of the membrane.
    Type: Application
    Filed: July 27, 2018
    Publication date: December 13, 2018
    Applicant: STMicroelectronics (Crolles 2) SAS
    Inventors: Emmanuel Dubois, Jean-Francois Robillard, Stephane Monfray, Thomas Skotnicki