Abstract: A first closed enclosure defines a cavity having an inner dimension smaller than 5 mm. At least one second resiliently deformable closed enclosure is connected in fluid communication with the first enclosure. A fluid at more than 90% in the liquid state fills the first and second enclosures. A first portion of the first enclosure is in contact with a hot source of a temperature higher than the evaporation temperature of the fluid. A second portion of the first enclosure located between the first portion and the resiliently deformable closed enclosure is in contact with a cold source at a temperature lower than the condensation temperature of the fluid. An electromechanical transducer is coupled to a deformable membrane of the resiliently deformable closed enclosure.

Abstract: A power conversion device includes an enclosure containing one or more drops of a liquid. A capacitive electret transducer is coupled to the enclosure. In response to applied heat at a heating surface, the liquid vaporizes and then condenses on a flexible membrane of the capacitive electret transducer. The flexible membrane is displaced in response to the vaporization-condensation and the capacitive electret transducer generates an output current.

Abstract: A thermo-electric generator includes a semiconductor membrane with a phononic structure containing at least one P-N junction. The membrane is suspended between a first support designed to be coupled to a cold thermal source and a second support designed to be coupled to a hot thermal source. The structure for suspending the membrane has an architecture allowing the heat flux to be redistributed within the plane of the membrane.

Abstract: Elongated fins of a first semiconductor material are insulated from and formed over an underlying substrate layer (of either SOI or bulk type). Elongated gates of a second semiconductor material are then formed to cross over the elongated fins at channel regions, and the gate side walls are covered by sidewall spacers. A protective material is provided to cover the underlying substrate layer and define sidewall spacers on side walls of the elongated fins between the elongated gates. The first semiconductor material and insulating material of the elongated fins located between the protective material sidewall spacers (but not under the elongated gates) is removed to form trenches aligned with the channel regions. Additional semiconductor material is then epitaxially grown inside each trench between the elongated gates to form source-drain regions adjacent the channel regions formed by the elongated fins of the first semiconductor material located under the elongated gates.

Abstract: An electrical generator is composed of a bi-layer membrane enabling the conversion of a thermal energy into electrical energy. The bi-layer membrane is deformable and includes at least two layers having different thermal expansion coefficients. The membrane moves between positions in a reversible fashion in response to heat dissipation and as a function of two flexing temperatures. A magnetic structure associated with the membrane functions to set the flexing temperatures as a function of ambient temperature.

Abstract: A method of manufacturing bistable strips having different curvatures, each strip including a plurality of portion of layers of materials, wherein at least one specific layer portion is deposited by a plasma spraying method in conditions different for each of the strips.

Abstract: Elongated fins of a first semiconductor material are insulated from and formed over an underlying substrate layer (of either SOI or bulk type). Elongated gates of a second semiconductor material are then formed to cross over the elongated fins at channel regions, and the gate side walls are covered by sidewall spacers. A protective material is provided to cover the underlying substrate layer and define sidewall spacers on side walls of the elongated fins between the elongated gates. The first semiconductor material and insulating material of the elongated fins located between the protective material sidewall spacers (but not under the elongated gates) is removed to form trenches aligned with the channel regions. Additional semiconductor material is then epitaxially grown inside each trench between the elongated gates to form source-drain regions adjacent the channel regions formed by the elongated fins of the first semiconductor material located under the elongated gates.

Abstract: An assembly converting thermal energy into electrical energy including: at least one temperature sensitive bimetallic strip arranged in a space delimited by a hot source and a cold source facing each other, the bimetallic strip extending along a longitudinal axis; at least one suspended element fixed in movement to the sensitive element and extending laterally from the sensitive element and including a free end; and at least one piezoelectric element suspended from a part fixed relative to the sensitive element and vibrated by the suspended element such that it is vibrated when the bimetallic strip changes configuration and the suspended element comes into contact with the piezoelectric element, the piezoelectric element being located outside the space defined between the bimetallic strip and the hot source and outside the space between the bimetallic strip and the cold source.

Abstract: An integrated circuit chip cooling device includes a network of micropipes. A first pipe portion and a second pipe portion of the network are connected by at least one valve. The valve is formed of a bilayer strip. In response to change in temperature, the shape of the bilayer strip changes to move the valve from a substantially closed position to an open position. In one configuration, the change is irreversible. In another configuration, the change is reversible in response to an opposite change in temperature.

Abstract: A device for converting thermal power into electric power includes many conversion cells arranged inside and on top of a substrate. Each conversion cell includes a curved bimetal strip and first and second diodes coupled to the bimetal strip. The diodes are arranged in a semiconductor region of the substrate.

Abstract: A device for converting heat energy into electrical energy including cells, the cells including: a first cavity with one wall for contacting a heat source; a second cavity with one wall for contacting a cold source; a primary channel between the first cavity and the second cavity transporting a fluid as liquid drops, the primary channel providing transport of liquid fluid drops from the second cavity to the first cavity; at least one secondary channel between the first cavity and the second cavity transporting the fluid as a gas; a piezoelectric material provided in one of the cavities; and a fluid as a liquid and gas contained within the cell.

Abstract: Electrical energy is generated in a device that includes an integrated circuit which produces thermal flux when operated. A substrate supports the integrated circuit. A structure is formed in the substrate, that structure having a semiconductor p-n junction thermally coupled to the integrated circuit. Responsive to the thermal flux produced by the integrated circuit, the structure generates electrical energy. The generated electrical energy may be stored for use by the integrated circuit.

Abstract: A device for converting thermal energy into electric energy intended to be used in combination with a hot source including: a capacitor of variable capacitance, including two electrodes separated by an electrically-insulating material, one of these electrodes being deformable and being associated with an element forming a bimetallic strip, said bimetallic strip including at least two layers of materials having different thermal expansion coefficients, said bimetallic strip being free to deform when it is submitted to the heat of said hot source; a second capacitor having a first electrode connected to a first electrode of said capacitor of variable capacitance; a harvesting circuit electrically connected between the second electrode of the capacitor of variable capacitance and the second electrode of the second capacitor, said harvesting circuit being capable of conducting the current flowing between said second electrodes.

Abstract: A microelectronic device is provided with at least one transistor or triode with Fowler-Nordheim tunneling current modulation, and supported on a substrate. The triode or the transistor includes at least one first block forming a cathode and at least one second block forming an anode. The first block and the second block are supported on the substrate, and are separated from each other by a channel insulating zone also supported on the substrate. A gate dielectric zone is supported on at least the channel insulating zone, and a gate is supported on the gate dielectric zone.

Abstract: Electrical energy is generated in a device that includes an integrated circuit which produces thermal flux when operated. A substrate supports the integrated circuit. A structure is formed in the substrate, that structure having a semiconductor p-n junction thermally coupled to the integrated circuit. Responsive to the thermal flux produced by the integrated circuit, the structure generates electrical energy. The generated electrical energy may be stored for use by the integrated circuit.

Abstract: A transistor including a germanium-rich channel. The germanium-rich channel is produced by oxidation of the silicon contained in the silicon-germanium intermediate layer starting from the lower surface of the said intermediate layer. The germanium atoms are therefore caused to migrate towards the upper surface of the silicon-germanium intermediate layer, and are stopped by the gate insulating layer. The migration of the atoms during the oxidation step is thus less prejudicial to the performance of the transistor, since the gate insulator of the transistor has already been produced and is not modified during this step. The migration of the germanium atoms towards the gate insulator, which is immobile, leads to a limitation of the surface defects between the channel and the insulator.

Abstract: A microresonator comprising a single-crystal silicon resonant element and at least one activation electrode placed close to the resonant element, in which the resonant element is placed in an opening of a semiconductor layer covering a substrate, the activation electrode being formed in the semiconductor layer and being level at the opening.

Abstract: A method is provided for fabricating transistors of first and second types in a single substrate. First and second active zones of the substrate are delimited by lateral isolation trench regions, and a portion of the second active zone is removed so that the second active zone is below the first active zone. First and second layers of semiconductor material are formed on the second active zone, so that the second layer is substantially in the same plane as the first active zone. Insulated gates are produced on the first active zone and the second layer. At least one isolation trench region is selectively removed, and the first layer is selectively removed so as to form a tunnel under the second layer. The tunnel is filled with a dielectric material to insulate the second layer from the second active zone of the substrate. Also provided is such an integrated circuit.

Abstract: An integrated electronic circuit with at least at least one passive electronic component and at least one active electronic component. The passive electronic component is formed within an insulating material disposed on a substrate. The active component is formed within a volume of substantially single-crystal semiconductor material disposed on top of the passive component.

Abstract: A single-crystal silicon region on insulator on silicon intended to receive at least one component, the insulator having overthicknesses.