Abstract: A method for producing a bolometric detector comprising producing a stack, on an interconnect level of a read-out circuit, comprising a sacrificial layer positioned between a carrier layer and an etch stop layer, the sacrificial layer comprising a mineral material; producing a conducting via passing through the stack such that it is in contact with a conducting portion of said interconnect level; depositing a conducting layer onto the carrier layer and the via; etching the conducting layer and the carrier layer, forming a bolometer membrane electrically connected to the via by a remaining portion of the conducting layer that covers an upper part of the via; and elimination of the sacrificial layer by selective chemical etching, and such that the membrane is suspended by the via.

Abstract: A method for producing a bolometric detector comprising: producing a stack, on an interconnect level of a read-out circuit, comprising a sacrificial layer positioned between a carrier layer and an etch stop layer, the sacrificial layer comprising a mineral material; producing a conducting via passing through the stack such that it is in contact with a conducting portion of said interconnect level; depositing a conducting layer onto the carrier layer and the via; etching the conducting layer and the carrier layer, forming a bolometer membrane electrically connected to the via by a remaining portion of the conducting layer that covers an upper part of the via; elimination of the sacrificial layer by selective chemical etching, and such that the membrane is suspended by the via.

Abstract: A device for detecting electromagnetic radiation, including a readout circuit, which is located in a substrate, and an electrical connection pad, which is placed on the substrate, including a metal section that is raised above the substrate and electrically connected to the readout circuit. The detection device furthermore includes a protection wall that extends under the raised metal section so as to define therewith at least one portion of a cavity, and what is called a reinforcing layer section that is located in the cavity and on which the raised metal section rests.

Abstract: A device for detecting electromagnetic radiation is provided, including a substrate; a matrix of thermal detectors disposed on the substrate; and a structure encapsulating the matrix of thermal detectors, including an encapsulating layer extending continuously around and above the matrix of thermal detectors so as to define with the substrate a cavity in which the matrix of thermal detectors is disposed, the encapsulating layer including at least one internal bearing section, which bears directly against the substrate between two adjacent thermal detectors of said matrix, said at least one internal bearing section including a sidewall and a peripheral wall, the sidewall being separate from the peripheral wall in a plane parallel to a plane of the substrate, and the peripheral wall encircling the matrix of thermal detectors.

Abstract: A device for detecting electromagnetic radiation, including a substrate; at least one thermal detector, placed on the substrate, including an absorbing membrane suspended above the substrate; and an encapsulating structure encapsulating the thermal detector, including an encapsulating layer extending around and above the thermal detector so as to define with the substrate a cavity in which the thermal detector is located; wherein the encapsulating layer includes at least one through-orifice that is what is referred to as an exhaust vent, each exhaust vent being placed so that at least one thermal detector has a single exhaust vent located facing the corresponding absorbing membrane, preferably plumb with the center of said absorbing membrane.

Abstract: A device for detecting electromagnetic radiation is provided, including a substrate; at least one thermal detector placed on the substrate; and an encapsulating structure encapsulating the detector, including a thin encapsulating layer of a material that is transparent to said radiation, extending around and above the detector so as to define with the substrate a cavity in which the detector is located; wherein the thin encapsulating layer comprises a peripheral wall that encircles the detector, and that has a cross section, in a plane parallel to the plane of the substrate, of square or rectangular shape, corners of which are rounded.

Abstract: A bolometric detector of LWIR wavelengths, including: a substrate; a membrane suspended above the substrate by supporting elements; an absorbing element comprising several MIM structures each formed with a lower metal element, an upper metal element specific to each MIM structure and with a dielectric element positioned between the lower and upper metal elements; a thermometric element comprising at least one thermometric material; wherein: the membrane includes the upper metal element, the thermometric material and one portion of the dielectric element of each MIM structure, the upper metal elements of at least two MIM structure have different dimensions relatively to each other in the main plane of the membrane, and the dielectric element of each of the MIM structures includes at least one of the following materials having vibrational modes in the LWIR range: Al2O3, AlN, TiO2.

Abstract: A device for detecting electromagnetic radiation, including a readout circuit, which is located in a substrate, and an electrical connection pad, which is placed on the substrate, including a metal section that is raised above the substrate and electrically connected to the readout circuit. The detection device furthermore includes a protection wall that extends under the raised metal section so as to define therewith at least one portion of a cavity, and what is called a reinforcing layer section that is located in the cavity and on which the raised metal section rests.

Abstract: The invention relates to a device for detecting electromagnetic radiation, comprising: a substrate (3); at least one thermal detector (2), placed on the substrate; and an encapsulating structure (5) encapsulating the detector, including a thin encapsulating layer (6) made of a material that is transparent to said radiation, extending around and above the detector so as to define with the substrate a cavity (4) in which the detector (2) is located; characterized in that the thin encapsulating layer comprises a peripheral wall (6a) that encircles the detector, and that has a cross section, in a plane parallel to the plane of the substrate, of square or rectangular shape the corners (6a-3) of which are rounded.

Abstract: A device for detecting electromagnetic radiation, including a substrate; at least one thermal detector, placed on the substrate, including an absorbing membrane suspended above the substrate; and an encapsulating structure encapsulating the thermal detector, including an encapsulating layer extending around and above the thermal detector so as to define with the substrate a cavity in which the thermal detector is located; wherein the encapsulating layer includes at least one through-orifice that is what is referred to as an exhaust vent, each exhaust vent being placed so that at least one thermal detector has a single exhaust vent located facing the corresponding absorbing membrane, preferably plumb with the centre of said absorbing membrane.

Abstract: The invention relates to a device for detecting electromagnetic radiation, comprising: a substrate; a matrix of thermal detectors, which matrix is placed on the substrate; and a detector-encapsulating structure, including an encapsulating layer extending around and above the matrix of detectors so as to define with the substrate a cavity in which the matrix of detectors is located; in which the encapsulating layer comprises at least one section, which is what is referred to as an internal bearing section, located between two adjacent detectors, and which bears directly against the substrate.

Abstract: An infrared detection device including an infrared heat detector and a connection pad each spaced apart from an etching stop layer by a non-zero distance substantially equal relatively to each other, wherein first and second electrically conducting vias are respectively electrically connected to first and second portions of a metal line of a penultimate level of electrical interconnections, and wherein an empty space formed in a first inter-metal dielectric layer surrounds the first electrically conducting via and extends under the infrared heat detector.

Abstract: A bolometric detector of LWIR wavelengths, including: a substrate; a membrane suspended above the substrate by supporting elements; an absorbing element comprising several MIM structures each formed with a lower metal element, an upper metal element specific to each MIM structure and with a dielectric element positioned between the lower and upper metal elements; a thermometric element comprising at least one thermometric material; wherein: the membrane includes the upper metal element, the thermometric material and one portion of the dielectric element of each MIM structure, the upper metal elements of at least two MIM structure have different dimensions relatively to each other in the main plane of the membrane, and the dielectric element of each of the MIM structures includes at least one of the following materials having vibrational modes in the LWIR range: Al2O3, AlN, TiO2.

Abstract: A method of sealing a first wafer and a second wafer each made of semiconducting materials, including: implanting a metallic species in at least the first wafer, assembling the first wafer and the second wafer by molecular bonding, and after the molecular bonding, forming a metallic ohmic contact including alloys formed between the implanted metallic species and the semiconducting materials of the first wafer and the second wafer, the metallic ohmic contact being formed at an assembly interface between the first wafer and the second wafer, wherein the forming includes causing the implanted metallic species to diffuse towards the interface between the first wafer with the second wafer and beyond the interface.

Abstract: An infrared detection device including an infrared heat detector and a connection pad each spaced apart from an etching stop layer by a non-zero distance substantially equal relatively to each other, wherein first and second electrically conducting vias are respectively electrically connected to first and second portions of a metal line of a penultimate level of electrical interconnections, and wherein an empty space formed in a first inter-metal dielectric layer surrounds the first electrically conducting via and extends under the infrared heat detector.

Abstract: An assembly method to enable local electrical bonds between zones located on a face of a first substrate and corresponding zones located on a face of a second substrate, the faces being located facing each other, at least one of the substrates having a surface topography. The method forms an intermediate layer including at least one burial layer on the face of the substrate or substrates having a surface topography to make it (them) compatible with molecular bonding of the faces of substrates to each other from a topographic point of view, resistivity and/or thickness of the intermediate layer being chosen to enable the local electrical bonds, brings the two faces into contact, the substrates positioned to create electrical bonds between areas on the first substrate and corresponding areas on the second substrate, and bonds the faces by molecular bonding.

Abstract: The invention relates to an assembly method to enable local electrical bonds between zones located on a face of a first substrate and corresponding zones located on a face of a second substrate, said faces being located facing each other, at least one of the substrates having a surface topography, characterised in that the method comprises steps consisting of: forming an intermediate layer comprising at least one burial layer on the face of the substrate or substrates having a surface topography to make it (them) compatible with molecular bonding of said faces of substrates to each other from a topographic point of view, the resistivity and/or thickness of the intermediate layer being chosen to enable said local electrical bonds, bringing the two faces into contact, the substrates being positioned so as to create electrical bonds between areas located on the first substrate and the corresponding areas located on the second substrate, bonding the faces of the first and second substrates by molecular bonding

Abstract: A process assembling first and second substrates on contact faces by molecular bonding. The first substrate contact face has an electrically conducting layer on at least part of its surface. The process deposits a bond layer on at least part of the electrically conducting layer, which bond layer can molecularly bond with a zone of the second substrate contact face and be combined with the electrically conducting layer to form a conducting alloy, contacts the bond layer with the zone of the second substrate contact face and molecularly bond them, and transforms over all or part of its thickness of all or part of the electrically conducting layer with all or part of the bond layer and with at least part of the thickness of the zone of the contact face on all or part of the surface of the second substrate to form a conducting alloy(s) zone.

Abstract: The invention relates to a sealing process for two wafers (2, 12) made of semiconducting materials, comprising: a step for implantation of metallic species (4) in at least the first wafer, a step for assembly of the first and second wafer, an annealing step.