Abstract: A handle wafer has a cavity coated with a dielectric. A device wafer is bonded to the handle wafer. Metal lines, devices or circuits fabricated on device layer overlay the cavity in the handle wafer thus reducing parasitic capacitances to the handle wafer and crosstalk through the handle wafer. This constitutes a rugged air bridge structure capable of being passivated and/or being placed in plastic packages.

Abstract: An air bridge structure 102 is formed in a cavity of a glass lid substrate. The air bridge structure is bonded to an integrated circuit in a device substrate 82 to provide an air bridge structure coupled to the integrated circuit.

Abstract: A die 810 has an outer, annular via 814 filled with conductive material in order to electrically shield an inner via 816. A die 820 can be electrically shielded from another area 822 by use of a wall 823 having a trench with oxidized side walls and a conductive filling.

Abstract: A bonded wafer has a first handle wafer 12, a device layer 10', an interconnect layer 14, and a number of vias filled with conductive material that extends between the surfaces 6, 8 of the device layer 10'. the interconnect layer 14 has conductors that connect internal device contacts to the conductive vias. A second handle wafer 40 of glass is bonded to the interconnect layer 14 and the first handle wafer is removed. Bottom, external contacts 36 are formed on surface 6 of device layer 10'.

Abstract: In a sub-micron line width process, a first layer of polysilicon 13 is patterned into lines 1,2 spaced a predetermined distance. An oxide layer 11 is deposited. A second layer of polysilicon 14 is deposited on the insulating layer. A gate contact 19 or emitter contact 35 is formed from the second polysilicon layer 14. The gate 19 or emitter 35 is spaced from the lines 1,2 a distance approximately equal to the thickness of the second polysilicon layer 14.

Abstract: In a microelectronic device formed on a substrate 12, a pair of trenches 30, 36 connected at their intersection by trench 54 which is disposed at an obtuse angle with respect to each of the pair of trenches 30 and 36.

Abstract: A surface mountable integrated circuit and a method of manufacture are disclosed. A wafer 110 has a die with an integrated circuit 119 in one surface of the wafer. A via 130 extends to the opposite surface. the via has a sidewall oxide 131 and is filled with a conductive material such as metal or doped polysilicon. The metal may comprise a barrier layer and an adhesion layer. The second end of the via can be fashioned as a prong 233 or a receptacle 430. Dies 335a, 335b, 335c with conductive vias are stacked on top of each other. Other dies 341, 343 are connected together with an optical coupling die 342.

Abstract: A surface mountable integrated circuit is disclosed. Dies 1041 with edge connections 1080 are coupled to each other with the edge connection and to a printed circuit board 1070.

Abstract: A surface mountable integrated circuit and a method of manufacture are disclosed. A wafer 110 has a die with an integrated circuit 119 in one surface of the wafer. A via 130 extends to the opposite surface. The via has a sidewall oxide 131 and is filled with a conductive material such as metal or doped polysilicon. The metal may comprise a barrier layer and an adhesion layer. The second end of the via can be fashioned as a prong 233 or a receptacle 430. Dies with vias can be stacked on top of each other or surface mounted to printed circuit boards or other substrate.

Abstract: In a sub-micron line width process, a first layer of polysilicon 13 is patterned into lines 1,2 spaced a predetermined distance. An oxide layer 11 is deposited. A second layer of polysilicon 14 is deposited on the insulating layer. A gate contact 19 or emitter contact 35 is formed from the second polysilicon layer 14. The gate 19 or emitter 35 is spaced from the lines 1,2 a distance approximately equal to the thickness of the second polysilicon layer 14.