Abstract: Intercalation pastes for use with semiconductor devices are disclosed. The pastes contain precious metal particles, intercalating particles, and an organic vehicle and can be used to improve the material properties of metal particle layers. Specific formulations have been developed to be screen-printed directly onto a dried metal particle layer and fired to make a fired multilayer stack. The fired multilayer stack can be tailored to create a solderable surface, high mechanical strength, and low contact resistance. In some embodiments, the fired multilayer stack can etch through a dielectric layer to improve adhesion to a substrate. Such pastes can be used to increase the efficiency of silicon solar cells, specifically multi- and mono-crystalline silicon back-surface field (BSF), and passivated emitter and rear contact (PERC) photovoltaic cells. Other applications include integrated circuits and more broadly, electronic devices.

Abstract: Materials and methods for fabrication of rear tabbing, front busbar, and fine grid line layers for silicon based photovoltaic cells are disclosed. Materials include conductive metallization pastes that contain core-shell nickel based particles.

Abstract: A method of forming a fired multilayer stack are described. The method involves the steps of a) applying a wet metal particle layer on at least a portion of a surface of a substrate, b) drying the wet metal particle layer to form a dried metal particle layer, c) applying a wet intercalation layer directly on at least a portion of the dried metal particle layer to form a multilayer stack, d) drying the multilayer stack, and e) co-firing the multilayer stack to form the fired multilayer stack. The intercalating layer may include one or more of low temperature base metal particles, crystalline metal oxide particles, and glass frit particles. The wet metal particle layer may include aluminum, copper, iron, nickel, molybdenum, tungsten, tantalum, titanium, steel or combinations thereof.

Abstract: Intercalation pastes for use with semiconductor devices are disclosed. The pastes contain precious metal particles, intercalating particles, and an organic vehicle and can be used to improve the material properties of metal particle layers. Specific formulations have been developed to be screen-printed directly onto a dried metal particle layer and fired to make a fired multilayer stack. The fired multilayer stack can be tailored to create a solderable surface, high mechanical strength, and low contact resistance. In some embodiments, the fired multilayer stack can etch through a dielectric layer to improve adhesion to a substrate. Such pastes can be used to increase the efficiency of silicon solar cells, specifically multi- and mono-crystalline silicon back-surface field (BSF), and passivated emitter and rear contact (PERC) photovoltaic cells. Other applications include integrated circuits and more broadly, electronic devices.

Abstract: Intercalation pastes for use with semiconductor devices are disclosed. The pastes contain precious metal particles, intercalating particles, and an organic vehicle and can be used to improve the material properties of metal particle layers. Specific formulations have been developed to be screen-printed directly onto a dried metal particle layer and fired to make a fired multilayer stack. The fired multilayer stack can be tailored to create a solderable surface, high mechanical strength, and low contact resistance. In some embodiments, the fired multilayer stack can etch through a dielectric layer to improve adhesion to a substrate. Such pastes can be used to increase the efficiency of silicon solar cells, specifically multi- and mono-crystalline silicon back-surface field (BSF), and passivated emitter and rear contact (PERC) photovoltaic cells. Other applications include integrated circuits and more broadly, electronic devices.

Abstract: Intercalation pastes for use with semiconductor devices are disclosed. The pastes contain precious metal particles, intercalating particles, and an organic vehicle and can be used to improve the material properties of metal particle layers. Specific formulations have been developed to be screen-printed directly onto a dried metal particle layer and fired to make a fired multilayer stack. The fired multilayer stack can be tailored to create a solderable surface, high mechanical strength, and low contact resistance. In some embodiments, the fired multilayer stack can etch through a dielectric layer to improve adhesion to a substrate. Such pastes can be used to increase the efficiency of silicon solar cells, specifically multi- and mono-crystalline silicon back-surface field (BSF), and passivated emitter and rear contact (PERC) photovoltaic cells. Other applications include integrated circuits and more broadly, electronic devices.

Abstract: Oxidation-resistant electrically-conductive metal particles (ORCMP) are disclosed. ORCMPs are comprised of a base-metal core, an oxidation-resistant first shell, and an optional conductive second shell. ORCMPs are low cost alternatives to silver particles in metal fillers for low-temperature, electrically-conductive adhesives. Adhesives including ORCMPs, organic vehicles, and optional conductive metal particles such as silver were formulated to yield conductive films upon curing at low temperatures. Such films can be used in many electronic devices where low-temperature, low cost films are needed.

Abstract: Metallization pastes for use with semiconductor devices are disclosed. The pastes contain silver particles, low-melting-point base-metal particles, organic vehicle, and optional crystallizing agents. Specific formulations have been developed that produce stratified metal films that contain less silver than conventional pastes and that have high peel strengths. Such pastes can be used to make high contact resistance metallization layers on silicon.

Abstract: Materials and methods for fabrication of rear tabbing, front busbar, and fine grid line layers for silicon based photovoltaic cells are disclosed. Materials include conductive metallization pastes that contain core-shell nickel based particles.

Abstract: Multi-crystalline group II-VI solar cells and methods for fabrication of same are disclosed herein. A multi-crystalline group II-VI solar cell includes a first photovoltaic sub-cell comprising silicon, a tunnel junction, and a multi-crystalline second photovoltaic sub-cell. A plurality of the multi-crystalline group II-VI solar cells can be interconnected to form low cost, high throughput flat panel, low light concentration, and/or medium light concentration photovoltaic modules or devices.

Abstract: Metallization pastes for use with semiconductor devices are disclosed. The pastes contain silver nanoparticles, silver microparticles, and nondeformable inorganic material particles. Specific formulations have been developed that yield printed lines with low porosities and high peel strengths.

Abstract: Multi-crystalline group II-VI solar cells and methods for fabrication of same are disclosed herein. A multi-crystalline group II-VI solar cell includes a first photovoltaic sub-cell comprising silicon, a tunnel junction, and a multi-crystalline second photovoltaic sub-cell. A plurality of the multi-crystalline group II-VI solar cells can be interconnected to form low cost, high throughput flat panel, low light concentration, and/or medium light concentration photovoltaic modules or devices.

Abstract: Materials and Methods for fabrication of rear tabbing, front busbar, and fine grid line layers for silicon based photovoltaic cells are disclosed. Materials include conductive metallization pastes that contain core-shell nickel based particles.

Abstract: Apparatus and methods to incorporate p-type dopants in II-VI semiconducting layers are disclosed herein. In some embodiments, radical nitrogen is introduced in a physical vapor deposition apparatus operating at moderate pressures (e.g. 10?5 Torr to 100 Torr). The radical nitrogen allows for in-situ doping of II-VI materials, such as ZnTe, to degenerate levels.

Abstract: Materials and methods for fabrication of rear tabbing, front busbar, and fine grid line layers for silicon based photovoltaic cells are disclosed. Materials include conductive metallization pastes that contain core-shell nickel based particles.

Abstract: A method for producing and depositing air-stable, easily decomposable, vulcanized ink on any of a wide range of substrates is disclosed. The ink enables high-volume production of optoelectronic and/or electronic devices using scalable production methods, such as roll-to-roll transfer, fast rolling processes, and the like.

Abstract: A method for forming a substrate comprising nanometer-scale pillars or cones that project from the surface of the substrate is disclosed. The method enables control over physical characteristics of the projections including diameter, sidewall angle, and tip shape. The method further enables control over the arrangement of the projections including characteristics such as center-to-center spacing and separation distance.

Abstract: A method for producing and depositing air-stable, easily decomposable, vulcanized ink on any of a wide range of substrates is disclosed. The ink enables high-volume production of optoelectronic and/or electronic devices using scalable production methods, such as roll-to-roll transfer, fast rolling processes, and the like.

Abstract: A method for forming a substrate comprising nanometer-scale pillars or cones that project from the surface of the substrate is disclosed. The method enables control over physical characteristics of the projections including diameter, sidewall angle, and tip shape. The method further enables control over the arrangement of the projections including characteristics such as center-to-center spacing and separation distance.

Abstract: There is disclosed a dentifrice formulation which is stable in the sense of not producing gassing as evidenced by visually discernable distention over a period of 168 days at 43.degree. C. in an unlined aluminium tube.The formulation comprises an aqueous dentally acceptable oral vehicle at least 27.5% by weight of the dentifrice comprising water and dispersed in the said oral vehicle from 10 to 40% by weight of the dentifrice of a neutral siliceous polishing agent having a stirred slurry pH (as herein defined) in the range from 6.5 to 7.5, and a stabilizing amount of monofluorophosphate ion, the dentifrice having a stirred slurry pH in the range from 5.5 to 8.