Abstract: A memory has input buffer circuit which provides high immunity to problems associated with address float while providing high speed for both decoder selection and for transition detection. The input buffer circuit includes a pair of input NOR gates which provides for independent signal paths to a cross-coupled latch. Independent hysteresis circuits are provided to each signal path between the two NOR gates and the cross-coupled latch. This allows for independently selecting the amount of dc margin and hysteresis so that the use of hysteresis does not adversely effect dc margin.

Abstract: A block architecture memory has two stacks of memory blocks. Between the two stacks are blocks of sense amplifiers. Each block of sense amplifiers is coupled to a memory block in each of the stacks of memory blocks via local data lines. Located at the bottom of each stack of memory blocks is a redundant block of columns of memory cells. There is a redundant sense amplifier located between and coupled to the redundant blocks of columns via local data lines. The redundant sense amplifier is also coupled to a redundant global data line. An input/output multiplexer is coupled to all of the global data lines. The multiplexer provides and receives external data. If one of the redundant columns is to replace a defective column for a particular address, then the redundant global data line carries data which corresponds to the external data.

Abstract: A write drive data control circuit for controlling the transmission of data to a memory array includes data input means for receiving complimentary data signals which are then transmitted to output circuits. The valid data is latched and the input circuits disabled. The output circuits remain enabled so as to pass the latched data to the memory array. After a predetermined period of time, the output circuits are disabled. In this manner, both the data set up time and data hold time may be independently optimized.

Abstract: A memory has a transmission gate requiring complementary signals for coupling a bit line to a data line. The complementary signals are generated utilizing a simplified circuit which does not require complementary predecoded signals. Two predecoded signals are further decoded by a circuit which provides the signals needed by the transmission gate. Although simplified circuitry is used, all of the voltage levels provided by the circuitry have a steady state at either the positive power supply or at ground so that there is no steady state current drain caused by signals that are not full rail.

Abstract: A memory, which has an amplifying circuit which provides a pair of differential signals representative of data contained in a memory cell selected by an address, has an output driver which receives this pair of differential signals on a pair of input lines. The output driver is tri-stated in response to an address transition so that the output driver provides only either valid data or a high impedance. The data provided by the differential signals is latched on the input lines by data latches after a predetermined time delay if new valid data has not appeared. The data latches used add less capacitance to the pair of input lines than those used previously.

Abstract: An integrated circuit has an identifying circuit coupled to an input. The input has ESD protection. The identifying circuit has a fuse which is in one of two possible states to provide the identifying information. A power on reset circuit provides a pulse in response to application of power to the integrated circuit. A current path between a power supply terminal and the input is provided in response to the power on reset pulse when the fuse is in one state. This current path is blocked when the fuse is in the other state. A user is thus provided with identifying information by the presence or absence of a current path at the input at the time when power is applied.

Abstract: A static RAM has a plurality of sub-arrays arranged in rows and columns, each sub-array having word lines running the length of the sub-array in a top to bottom direction, and having bit lines running the width of the sub-array in a left to right direction, and having a word line driver for enabling a selected word line in response to receiving a row select signal corresponding to the selected word line; a global row decoder for providing the row select signals as determined by row address signals; a first plurality of column pre-decoders for performing a partial decode of data provided on the bit lines of a first of the rows of sub-arrays, each column pre-decoder corresponding to a particular sub-array; a second plurality of column pre-decoders for performing a partial decode of data provided on the bit lines of a second of the rows of sub-arrays, each column pre-decoder corresponding to a particular sub-array; and a plurality of sense amplifiers for sensing the output of the first and second column decoders

Abstract: A memory circuit has a plurality of bit line pairs and intersecting word lines with a memory cell located at each such intersection. A column address selects the bit line which is to be accessed and a row address selects the word line which is enabled. In response to being selected, a bit line is coupled to a data line. In response to a column address transition, all of the bit lines are decoupled from the data lines while bit lines are precharged. In response to a row address transition, the word lines are disabled while the bit lines are equilibrated.

Abstract: A memory circuit has a plurality of bit line pairs and intersecting word lines with a memory cell located at each such intersection. A column address selects the bit line which is to be accessed and a row address selects the word line which is enabled. Memory cells along an enabled word line cause the bit lines to develop a voltage differential. In response to a change in the row address the bit lines are equalized and precharged. In response to a change in the column address, the bit lines are precharged without being equalized so that the developed voltage differential on the bit lines is maintained.

Abstract: An amplifier has a pair of common source transistors in which the sources are coupled together during a first mode of operation and isolated from each other during a second mode of operation. A current source provides current between a power supply terminal and these sources during the first mode and prevents current flow therebetween during the second mode. A pair of switchable loads act as loads for the common source transistors during the first mode and are switched off during the second mode.

Abstract: A sense amplifier has a pair of differential amplifiers and a pair of current mirrors. Each of the current mirrors has a master and a slave. The slaves are used for both loads of one of the differential amplifiers, and the masters are used for both loads of the other of the differential amplifiers. The pair of current mirrors are formed of transistors of one conductivity type while the differential amplifiers are formed of transistors of another conductivity type.

Abstract: A memory circuit, in using address transition detection to equilibrate bit lines, generates a summation address transition signal for the row address as well as a summation address transition signal for the column address. There is a transition detector for each address signal. The outputs of the transition detectors for the row address signals are summed in at least two logic stages using CMOS logic gates to generate the summation address signal for the row address. Similarly, the outputs of the transition detectors for the column address signals are summed in at least two logic stages using CMOS logic gates to generate the summation address signal for the column address.

Abstract: A memory circuit is provided which has a select and a deselect mode. The memory circuit, as part of its technique for quickly accessing data, includes circuitry for generating a pulse in response to detecting an address transition. When the memory circuit switches from the deselect mode to the select mode, these appears to be an address transition even when there is not an address transition. In order to prevent a delay associated with interpreting such false transition as an actual transition, the detection of address transitions is suppressed for a predetermined delay time following the transition from the select to deselect modes.

Abstract: A dynamic MOS random-access memory is described which includes a circuit for permitting checking of the on chip refresh counter. The memory also includes a refresh generator, the frequency of which automatically varies to compensate for temperature variations. Other innovations include an arbitration circuit, a hidden refresh function and unique accessing of redundant lines.

Abstract: A method for testing an MOS, dynamic random-access memory employing full capacitance dummy cells is described. During probe testing a potential higher than the reference potential is applied to the dummy cells when reading binary zeroes from the memory and a potential lower than the reference potential is applied to the dummy cells when reading binary zeroes from the memory. This testing procedure detects weak cells and amplifiers and helps present the packaging of defective parts. In addition, a simplified means for programming redundant elements is described which requires substantially less substrate area than previous methods.

Abstract: A dynamic MOS random-access memory is described which includes a circuit for permitting checking of the on chip refresh counter. The memory also includes a refresh generator, the frequency of which automatically varies to compensate for temperature variations. Other innovations include an arbitration circuit, a hidden refresh function and unique accessing of redundant lines.

Abstract: An MOS dynamic RAM organized in a byte-wide arrangement is described. An internal bus is used for multiplexed column address signals and data. Other multiplexing reduced the lines associated with the input/output circuits. A unique power-on circuit automatically resets clock generators if they are not operative after power is applied.

Abstract: A dynamic MOS random-access memory is described which includes a circuit for permitting checking of the on chip refresh counter. The memory also includes a refresh generator, the frequency of which automatically varies to compensate for temperature variations. Other innovations include an arbitration circuit, a hidden refresh function and unique accessing of redundant lines.