Abstract: Oxygen concentrator apparatus provides variation in therapy gas during a breathing cycle such as by varying flow rate and/or oxygen purity of enriched air. The apparatus may include a compressor and a valve set that operates sieve bed(s) for the enriching air and to vent exhaust gas from the bed(s). The therapy gas may include released enriched air and exhaust gas. The apparatus has a supply valve to selectively release enriched air from an accumulator via a primary path to a delivery conduit. The apparatus may include a secondary path, such as with a valve, to release a portion of exhaust gas to the delivery conduit. A controller actuates the valve set to produce the enriched air, and the supply valve to release enriched air to the delivery conduit. The controller may actuate the secondary valve in anti-sync with the supply valve to release exhaust gas to the delivery conduit.

Abstract: An oxygen concentrator (100) may have a moisture conditioning system. In some implementations, the concentrator includes a compressor to induce feed gas into the concentrator. A first pathway may receive the feed gas from the compression system. The first pathway may be configured to draw moisture to produce moisture reduced feed gas. The first pathway may lead the moisture reduced feed gas to sieve bed(s) which produce oxygen enriched air with the moisture reduced feed gas. An accumulator may be configured to receive the produced oxygen enriched air from the sieve bed(s). A second pathway from the accumulator may apply the drawn-out moisture to the produced enriched air to produce humidified enriched air. A third pathway may transfer the drawn-out moisture from the first pathway to the second pathway. An outlet coupled with the second pathway may release the humidified enriched air from the concentrator for a user.

Abstract: Systems and methods for managing the power consumption of an oxygen concentrator are disclosed. An oxygen concentration system may comprise a compression system, a canister system, one or more processors, and at least one of a pressure sensor or a movement sensor. The one or more processors may be configured to transition the oxygen concentration system to at least one of a prescribed mode of operation or a standby mode of operation. The timing of the transition may be based on at least one of a number of breaths detected from the pressure signals generated by the pressure sensor or an estimated energy content of the movement signal generated by the movement sensor. A predetermined volume or concentration of oxygen enriched air may be supplied to a user during the prescribed mode of operation. A reduced power may be provided to the compression system during the standby mode of operation.

Abstract: Embodiments of inductively coupled plasma (ICP) reactors are provided herein. In some embodiments, a dielectric window for an inductively coupled plasma reactor includes: a body including a first side, a second side opposite the first side, an edge, and a center, wherein the dielectric window has a dielectric coefficient that varies spatially. In some embodiments, an apparatus for processing a substrate includes: a process chamber having a processing volume disposed beneath a lid of the process chamber; and one or more inductive coils disposed above the lid to inductively couple RF energy into and to form a plasma in the processing volume above a substrate support disposed within the processing volume; wherein the lid is a dielectric window comprising a first side and an opposing second side that faces the processing volume, and wherein the lid has a dielectric coefficient that spatially varies to provide a varied power coupling of RF energy from the one or more inductive coils to the processing volume.

Abstract: A shielded lid heater lid heater suitable for use with a plasma processing chamber, a plasma processing chamber having a shielded lid heater and a method for plasma processing are provided. The method and apparatus enhances positional control of plasma location within a plasma processing chamber, and may be utilized in etch, deposition, implant, and thermal processing systems, among other applications where the control of plasma location is desirable. In one embodiment, a process for tuning a plasma processing chamber is provided that include determining a position of a plasma within the processing chamber, selecting an inductance and/or position of an inductor coil coupled to a lid heater that shifts the plasma location from the determined position to a target position, and plasma processing a substrate with the inductor coil having the selected inductance and/or position.

Abstract: A shielded lid heater lid heater suitable for use with a plasma processing chamber, a plasma processing chamber having a shielded lid heater and a method for plasma processing are provided. The method and apparatus enhances positional control of plasma location within a plasma processing chamber, and may be utilized in etch, deposition, implant, and thermal processing systems, among other applications where the control of plasma location is desirable. In one embodiment, a process for tuning a plasma processing chamber is provided that include determining a position of a plasma within the processing chamber, selecting an inductance and/or position of an inductor coil coupled to a lid heater that shifts the plasma location from the determined position to a target position, and plasma processing a substrate with the inductor coil having the selected inductance and/or position.

Abstract: A shielded lid heater lid heater suitable for use with a plasma processing chamber, a plasma processing chamber having a shielded lid heater and a method for plasma processing are provided. The method and apparatus enhances positional control of plasma location within a plasma processing chamber, and may be utilized in etch, deposition, implant, and thermal processing systems, among other applications where the control of plasma location is desirable. In one embodiment, a shielded lid heater is provided that includes an aluminum base and RF shield sandwiching a heater element.

Abstract: Embodiments of inductively coupled plasma (ICP) reactors are provided herein. In some embodiments, a dielectric window for an inductively coupled plasma reactor includes: a body including a first side, a second side opposite the first side, an edge, and a center, wherein the dielectric window has a dielectric coefficient that varies spatially. In some embodiments, an apparatus for processing a substrate includes: a process chamber having a processing volume disposed beneath a lid of the process chamber; and one or more inductive coils disposed above the lid to inductively couple RF energy into and to form a plasma in the processing volume above a substrate support disposed within the processing volume; wherein the lid is a dielectric window comprising a first side and an opposing second side that faces the processing volume, and wherein the lid has a dielectric coefficient that spatially varies to provide a varied power coupling of RF energy from the one or more inductive coils to the processing volume.

Abstract: An inductively-coupled plasma processing chamber has a chamber with a ceiling. A first and second antenna are placed adjacent to the ceiling. The first antenna is concentric to the second antenna. A plasma source power supply is coupled to the first and second antenna. The plasma source power supply generates a first RF power to the first antenna, and a second RF power to the second antenna. A substrate support disposed within the chamber. The size of the first antenna and a distance between the substrate support are such that the etch rate of the substrate on the substrate support is substantially uniform.

Abstract: A method of rendering a scene with a plurality of objects includes rendering an object in a scene, wherein a portion of the object spans at least two of a plurality of non-overlapping tiles that subdivide the scene, and wherein the portion of the object is rendered only once in rendering the scene. The process further includes storing the rendered output of the object into a deep-framebuffer. While rendering the object and storing the rendered output of the object, in response to the size of the deep-framebuffer reaching a predetermined threshold, the steps that are performed include dividing the deep-framebuffer's contents based on the plurality of non-overlapping tiles, storing the divided contents of the deep-framebuffer in a plurality of tile files, and clearing the contents of the deep-framebuffer.

Abstract: A shielded lid heater lid heater suitable for use with a plasma processing chamber, a plasma processing chamber having a shielded lid heater and a method for plasma processing are provided. The method and apparatus enhances positional control of plasma location within a plasma processing chamber, and may be utilized in etch, deposition, implant, and thermal processing systems, among other applications where the control of plasma location is desirable. In one embodiment, a shielded lid heater is provided that includes an aluminum base and RF shield sandwiching a heater element.

Abstract: A shielded lid heater lid heater suitable for use with a plasma processing chamber, a plasma processing chamber having a shielded lid heater and a method for plasma processing are provided. The method and apparatus enhances positional control of plasma location within a plasma processing chamber, and may be utilized in etch, deposition, implant, and thermal processing systems, among other applications where the control of plasma location is desirable. In one embodiment, a shielded lid heater is provided that includes an aluminum base and RF shield sandwiching a heater element.

Abstract: A method of rendering a scene with a plurality of objects includes rendering an object in a scene, wherein a portion of the object spans at least two of a plurality of non-overlapping tiles that subdivide the scene, and wherein the portion of the object is rendered only once in rendering the scene. The process further includes storing the rendered output of the object into a deep-framebuffer. While rendering the object and storing the rendered output of the object, in response to the size of the deep-framebuffer reaching a predetermined threshold, the steps that are performed include dividing the deep-framebuffer's contents based on the plurality of non-overlapping tiles, storing the divided contents of the deep-framebuffer in a plurality of tile files, and clearing the contents of the deep-framebuffer.

Abstract: The invention provides a method for suppressing tumor cell growth in a patient, comprising: administering to the patient an effective amount of an expression vector including a polynucleotide encoding a tumor suppressor protein having SEQ ID NO: 1 under conditions wherein the expression vector incorporates itself into the tumor cell genome and inhibits cell proliferation or induces cell death. The invention further provides a method for a method for inhibiting tumor cell proliferation in a tumor cell population comprising: administering to the tumor cell population an amount of a composition comprising a tumor suppressor protein having SEQ ID NO: 1 effective to inhibit tumor cell proliferation therein.

Abstract: A shielded lid heater lid heater suitable for use with a plasma processing chamber, a plasma processing chamber having a shielded lid heater and a method for plasma processing are provided. The method and apparatus enhances positional control of plasma location within a plasma processing chamber, and may be utilized in etch, deposition, implant, and thermal processing systems, among other applications where the control of plasma location is desirable. In one embodiment, a shielded lid heater is provided that includes an aluminum base and RF shield sandwiching a heater element.

Abstract: The invention provides a method for suppressing tumor cell growth in a patient, comprising: administering to the patient an effective amount of an expression vector including a polynucleotide encoding a tumor suppressor protein having SEQ ID NO: 1 under conditions wherein the expression vector incorporates itself into the tumor cell genome and inhibits cell proliferation or induces cell death. The invention further provides a method for a method for inhibiting tumor cell proliferation in a tumor cell population comprising: administering to the tumor cell population an amount of a composition comprising a tumor suppressor protein having SEQ ID NO: 1 effective to inhibit tumor cell proliferation therein.

Abstract: An inductively-coupled plasma processing chamber has a chamber with a ceiling. A first and second antenna are placed adjacent to the ceiling. The first antenna is concentric to the second antenna. A plasma source power supply is coupled to the first and second antenna. The plasma source power supply generates a first RF power to the first antenna, and a second RF power to the second antenna. A substrate support disposed within the chamber. The size of the first antenna and a distance between the substrate support are such that the etch rate of the substrate on the substrate support is substantially uniform.

Abstract: A substrate processing method comprises providing a substrate 105 comprising etch resistant material 210 in a process zone 155, such as an energized gas zone in a process chamber 110. The etch resistant material 210 may comprise a resist material 230 over mask material 240. The process may further comprise removing the etch resistant material 210, such as the resist material 230, in the process zone 155 before etching underlying layers.

Abstract: A method for processing a silicon substrate disposed in a substrate process chamber includes transferring the substrate into the substrate process chamber. The substrate having a hard mask formed thereon and a patterned photoresist overlying the hard mask to expose portions of the hard mask. The chamber being the type having a source power system and a bias power system. The method further includes etching the exposed portions of the hard mask to expose portions of the silicon substrate underlying the hard mask. Thereafter, the patterned photoresist is exposed to a first plasma formed from a first process gas to remove the photoresist from the hard mask. Thereafter, the exposed silicon substrate is etched by exposing the substrate to a second plasma formed from a second process gas by applying RF energy from the source power system and biasing the plasma toward the substrate. The substrate is transferred out of the substrate processing chamber.