Abstract: A method for processing a substrate disposed in a substrate process chamber having a source power includes transferring the substrate into the substrate process chamber. A trench is etched on the substrate by exposing the substrate to a plasma formed from a first etchant gas by applying RF energy from the source power system and biasing the plasma toward the substrate. Byproducts adhering to inner surfaces of the substrate process chamber are removed by igniting a plasma formed from a second etchant gas including a halogen source in the substrate process chamber without applying bias power or applying minimal bias power. Thereafter, the substrate is removed from the chamber. At least 100 more substrates are processed with the etching-a-trench step and removing-etch-byproducts step before performing a dry clean or wet clean operation on the chamber.

Abstract: A slot machine with multiple payoff modes and award presentations. The payoff modes in one embodiment are associated with a basic game and include a first and second payoff mode, the second payoff mode defining a “SUPER SCATTER” feature. Game outcomes are selected in the first and second payoff mode and symbol groups associated with the game outcomes are evaluated in the first payoff mode for symbol combinations displayed relative to one or more paylines and in the second payoff mode for symbol combinations displayed in scatter-pay format. In one embodiment, the machine operates in the first payoff mode until the occurrence of a symbol combination triggering the second payoff mode, then operates in the second payoff mode for a single spin before returning to the first payoff mode.

Abstract: A method of etching a silicon-containing layer 170 on a substrate 45 comprises the steps of placing the substrate 45 on a support 75 in a process chamber 50. The substrate 45 is exposed to an energized process gas comprising a bromine-containing gas, a chlorine-containing gas, an inorganic fluorinated gas, and an oxygen gas. The volumetric flow ratio of the gas constituents is selected so that the energized process gas etches regions 180a,b having different concentrations of dopant in the polysilicon layer 170 at substantially the same etching rate. Optionally, the gas composition is also tailored to simultaneously clean off etch residue from the internal surfaces of a process chamber 50 during etching of the substrate 45.