Abstract: Aberration marks, which may be used in conjunction with lenses in optical photolithography systems, may assist in estimating overlay errors and optical aberrations. Aberration marks may include an inner polygon pattern and an outer polygon pattern, wherein each of the inner and outer polygon patterns include a center, and two sets of lines and spaces having a different feature size and pitch that surround the outer polygon pattern. In some embodiments, the marks can be used with scatterometry or scanning electron microscope devices.

Abstract: The disclosed embodiments relate to calibrating a measuring device by comparing a set of master measurement data against a set of current measurement data. Adjustments are made to the measuring device based on the difference between the current measurement data and the master measurement data.

Abstract: An aberration mark for use in an optical photolithography system, and a method for estimating overlay errors and optical aberrations. The aberration mark includes an inner polygon pattern and an outer polygon pattern, wherein each of the inner and outer polygon patterns include a center, and two sets of lines and spaces having a different feature size and pitch that surround the outer polygon pattern. The aberration mark can be used to estimate overlay errors and optical aberrations. In some embodiments, the mark can also be used with scatterometry or scanning electron microscope devices. In other embodiments, the mark can be used to monitor aberrations of a lens in an optical photolithography system.

Abstract: Methods, systems, products and apparatuses are disclosed herein relating to registration and asymmetrically deposited films, and more specifically, to reducing asymmetrically deposited film induced registration measurement error.

Abstract: A semiconductor processing method includes forming an antireflective coating comprising Ge and Se over a substrate to be patterned. Photoresist is formed over the antireflective coating. The photoresist is exposed to actinic radiation effective to pattern the photoresist. The antireflective coating reduces reflection of actinic radiation during the exposing than would otherwise occur under identical conditions in the absence of the antireflective coating. After the exposing, the substrate is patterned through openings in the photoresist and the antireflective coating using the photoresist and the antireflective coating as a mask. In one implementation, after patterning the substrate, the photoresist and the antireflective coating are chemically etched substantially completely from the substrate using a single etching chemistry.

Abstract: The disclosed embodiments relate to calibrating a measuring device by comparing a set of master measurement data against a set of current measurement data. Adjustments are made to the measuring device based on the difference between the current measurement data and the master measurement data.

Abstract: A semiconductor processing method includes forming an antireflective coating comprising Ge and Se over a substrate to be patterned. Photoresist is formed over the antireflective coating. The photoresist is exposed to actinic radiation effective to pattern the photoresist. The antireflective coating reduces reflection of actinic radiation during the exposing than would otherwise occur under identical conditions in the absence of the antireflective coating. After the exposing, the substrate is patterned through openings in the photoresist and the antireflective coating using the photoresist and the antireflective coating as a mask. In one implementation, after patterning the substrate, the photoresist and the antireflective coating are chemically etched substantially completely from the substrate using a single etching chemistry.

Abstract: Methods, systems, products and apparatuses are disclosed herein relating to registration and asymmetrically deposited films, and more specifically, to reducing asymmetrically deposited film induced registration measurement error.

Abstract: Methods, systems, products and apparatuses are disclosed herein relating to registration and asymmetrically deposited films, and more specifically, to reducing asymmetrically deposited film induced registration measurement error.

Abstract: An aberration mark for use in an optical photolithography system, and a method for estimating overlay errors and optical aberrations. The aberration mark includes an inner polygon pattern and an outer polygon pattern, wherein each of the inner and outer polygon patterns include a center, and two sets of lines and spaces having a different feature size and pitch that surround the outer polygon pattern. The aberration mark can be used to estimate overlay errors and optical aberrations. In some embodiments, the mark can also be used with scatterometry or scanning electron microscope devices. In other embodiments, the mark can be used to monitor aberrations of a lens in an optical photolithography system.

Abstract: A semiconductor processing method includes forming an antireflective coating comprising Ge and Se over a substrate to be patterned. Photoresist is formed over the antireflective coating. The photoresist is exposed to actinic radiation effective to pattern the photoresist. The antireflective coating reduces reflection of actinic radiation during the exposing than would otherwise occur under identical conditions in the absence of the antireflective coating. After the exposing, the substrate is patterned through openings in the photoresist and the antireflective coating using the photoresist and the antireflective coating as a mask. In one implementation, after patterning the substrate, the photoresist and the antireflective coating are chemically etched substantially completely from the substrate using a single etching chemistry.

Abstract: Needle comb reticle patterns for use in both critical dimension analysis and registration analysis with a registration tool are disclosed. One embodiment of a needle comb reticle pattern includes a box-in-box feature flanked on two adjacent sides by needle combs with tapered flat-tipped needles. Another embodiment of a needle comb reticle pattern includes a box-in-box feature flanked on two adjacent sides by needle combs with tapered flat-tipped needles and flanked on the other two adjacent sides by reference bars. Yet another embodiment of a needle comb reticle pattern includes two complementary needle comb reticle subpatterns, each subpattern including a box-in-box feature with four flanking needle combs. A registration tool can be used with the needle combs and reference bars to measure critical dimension of a semiconductor process. The registration tool can also be used with the box-in-box feature to measure registration between two adjacent layers during semiconductor fabrication.

Abstract: The disclosed embodiments relate to calibrating a measuring device by comparing a set of master measurement data against a set of current measurement data. Adjustments are made to the measuring device based on the difference between the current measurement data and the master measurement data.

Abstract: A semiconductor processing method includes forming an antireflective coating comprising Ge and Se over a substrate to be patterned. Photoresist is formed over the antireflective coating. The photoresist is exposed to actinic radiation effective to pattern the photoresist. The antireflective coating reduces reflection of actinic radiation during the exposing than would otherwise occur under identical conditions in the absence of the antireflective coating. After the exposing, the substrate is patterned through openings in the photoresist and the antireflective coating using the photoresist and the antireflective coating as a mask. In one implementation, after patterning the substrate, the photoresist and the antireflective coating are chemically etched substantially completely from the substrate using a single etching chemistry.

Abstract: A system and method for minimizing critical dimension errors on imaged wafers is described. After imaging and processing one or more wafers, the various critical dimensions are determined across the imaged exposure field and compared with the target critical dimensions to ascertain average critical dimension errors. The critical dimension error distribution across the field is modeled and the necessary exposure dose corrections are calculated to compensate the critical dimension errors. A pellicle is formed with light intensity modifying regions corresponding to the calculated local dose corrections. These regions alter the amount of light which is transmitted from a light source through a semiconductor mask onto the exposure fields of the wafers. As a consequence, the critical dimensions of the printed features are altered as well. The light intensity modifying region may be formed by depositing, such as by sputtering, particles which reflect or absorb light.

Abstract: A system and method for minimizing critical dimension errors on imaged wafers is described. After imaging and processing one or more wafers, the various critical dimensions are determined across the imaged exposure field and compared with the target critical dimensions to ascertain average critical dimension errors. The critical dimension error distribution across the field is modeled and the necessary exposure dose corrections are calculated to compensate the critical dimension errors. A pellicle is formed with light intensity modifying regions corresponding to the calculated local dose corrections. These regions alter the amount of light which is transmitted from a light source through a semiconductor mask onto the exposure fields of the wafers. As a consequence, the critical dimensions of the printed features are altered as well. The light intensity modifying region may be formed by depositing, such as by sputtering, particles which reflect or absorb light.

Abstract: Needle comb reticle patterns for use in both critical dimension analysis and registration analysis with a registration tool is disclosed. One embodiment of a needle comb reticle pattern includes a box-in-box feature flanked on two adjacent sides by needle combs with tapered flat-tipped needles. Another embodiment of a needle comb reticle pattern includes a box-in-box feature flanked on two adjacent sides by needle combs with tapered flat-tipped needles and flanked on the other two adjacent sides by reference bars. Yet another embodiment of a needle comb reticle pattern includes two complementary needle comb reticle sub-patterns each sub-pattern including a box-in-box feature with four flanking needle combs. A registration tool can be used with the needle combs and reference bars to measure critical dimension of a semiconductor process. The registration tool can also be used with the box-in-box feature to measure registration between two adjacent layers during semiconductor fabrication.

Abstract: Methods, systems, products and apparatuses are disclosed herein relating to registration and asymmetrically deposited films, and more specifically, to reducing asymmetrically deposited film induced registration measurement error.

Abstract: A system and method for minimizing critical dimension errors on imaged wafers is described. After imaging and processing one or more wafers, the various critical dimensions are determined across the imaged exposure field and compared with the target critical dimensions to ascertain average critical dimension errors. The critical dimension error distribution across the field is modeled and the necessary exposure dose corrections are calculated to compensate the critical dimension errors. A pellicle is formed with light intensity modifying regions corresponding to the calculated local dose corrections. These regions alter the amount of light which is transmitted from a light source through a semiconductor mask onto the exposure fields of the wafers. As a consequence, the critical dimensions of the printed features are altered as well. The light intensity modifying region may be formed by depositing, such as by sputtering, particles which reflect or absorb light.

Abstract: Methods, systems, products and apparatuses are disclosed herein relating to registration and asymmetrically deposited films, and more specifically, to reducing asymmetrically deposited film induced registration measurement error.