Abstract: Methods, systems, products and apparatuses are disclosed herein relating to registration and asymmetrically deposited films, and more specifically, to reducing asymmetrically deposited film induced registration measurement error.

Abstract: Methods, systems, products and apparatuses are disclosed herein relating to registration and asymmetrically deposited films, and more specifically, to reducing asymmetrically deposited film induced registration measurement error.

Abstract: A system and method for minimizing critical dimension errors on imaged wafers is described. After imaging and processing one or more wafers, the various critical dimensions are determined across the imaged exposure field and compared with the target critical dimensions to ascertain average critical dimension errors. The critical dimension error distribution across the field is modeled and the necessary exposure dose corrections are calculated to compensate the critical dimension errors. A pellicle is formed with light intensity modifying regions corresponding to the calculated local dose corrections. These regions alter the amount of light which is transmitted from a light source through a semiconductor mask onto the exposure fields of the wafers. As a consequence, the critical dimensions of the printed features are altered as well. The light intensity modifying region may be formed by depositing, such as by sputtering, particles which reflect or absorb light.

Abstract: A system and method for minimizing critical dimension errors on imaged wafers is described. After imaging and processing one or more wafers, die various critical dimensions are determined across the imaged exposure field and compared with the target critical dimensions to ascertain average critical dimension errors. The critical dimension error distribution across the field is modeled and die necessary exposure dose corrections are calculated to compensate the critical dimension errors. A pellicle is formed with light intensity modifying regions corresponding to the calculated local dose corrections. These regions alter the amount of light which is transmitted from a light source through a semiconductor mask onto the exposure fields of the wafers. As a consequence, the critical dimensions of the printed features are altered as well. The light intensity modifying region may be formed by depositing, such as by sputtering, particles which reflect or absorb light.