Abstract: The invention can provide a method of processing a substrate using Double-Patterned-Shadow (D-P-S) processing sequences that can include (D-P-S) creation procedures, (D-P-S) evaluation procedures, and (D-P-S) transfer sequences. The (D-P-S) creation procedures can include deposition procedures, activation procedures, de-protecting procedures, sidewall angle (SWA) correction procedure, and Double Patterned (DP) developing procedures.

Abstract: The invention can provide a method of processing a substrate using Double-Patterned-Shadow (D-P-S) processing sequences that can include (D-P-S) creation procedures, (D-P-S) evaluation procedures, and (D-P-S) transfer sequences. The (D-P-S) creation procedures can include deposition procedures, activation procedures, de-protecting procedures, sidewall angle (SWA) correction procedure, and Double Patterned (DP) developing procedures.

Abstract: The invention provides a method of processing a substrate using Double-Patterning (D-P) processing sequences and Electric-Field Enhanced Layers (E-FELs). The D-P processing sequences and E-FELs can be used to create lines, trenches, vias, spacers, contacts, and gate structures using a minimum number of etch processes.

Abstract: A method for patterning a substrate with extreme ultraviolet (EUV) radiation is provided. The method includes contacting a surface of the substrate with at least one surface modification agent that reacts with and bonds to the surface 402 of the substrate 401 to provide a modified surface. A layer of photoresist is formed on the modified surface, followed by exposing the layer of photoresist to a pattern of EUV radiation. The surface modification agent has a general formula: X-L-Z, where X is a leaving group; L is a linkage group including a substituted or un-substituted carbon chain having 1 to 20 carbons, a sulfur moiety, a silicon moiety, or combinations thereof; and Z is at least one of an acid functional group, a photoactive acid generator group or a halide.

Abstract: Disclosed is a method and apparatus for mitigation of photoresist line pattern collapse in a photolithography process by applying a gap-fill material treatment after the post-development line pattern rinse step. The gap-fill material dries into a solid layer filling the inter-line spaces of the line pattern, thereby preventing line pattern collapse due to capillary forces during the post-rinse line pattern drying step. Once dried, the gap-fill material is depolymerized, volatilized, and removed from the line pattern by heating, illumination with ultraviolet light, by application of a catalyst chemistry, or by plasma etching.

Abstract: A method for etching a pattern on a surface is disclosed. A mask layer is disposed over a surface and a resist is disposed over the mask layer. The resist is exposed to light through the mask exposing primary pattern and sidelobe regions. The resist is developed and the mask layer is etched according to the resist pattern. A first material is deposited over the mask layer, wherein a gap is formed beneath the material and over the primary pattern region. The material is etched back so that the gap is exposed, and the primary pattern region is etched using the first material as a mask.

Abstract: A method and system for patterning a substrate using a dual tone development process is described. The method comprises use of plural photo-acid generators with or without a flood exposure of the substrate to improve process latitude for the dual tone development process.

Abstract: A method and system for patterning a substrate using a dual tone development process is described. The method and system comprise a flood exposure of the substrate to improve process latitude for the dual tone development process.

Abstract: A method and system for patterning a substrate using a dual tone development process is described. The method comprises use of plural photo-acid generators with or without a flood exposure of the substrate to improve process latitude for the dual tone development process.

Abstract: A method and system for patterning a substrate using a lithographic process, such as a dual tone development process, is described. The method comprises use of at least one photo-activated acid enhancement component to improve process latitude for the dual tone development process.

Abstract: An antireflective coating that contains at least two polymer components and comprises chromophore moieties and transparent moieties is provided. The antireflective coating is useful for providing a single-layer composite graded antireflective coating formed beneath a photoresist layer.

Abstract: The invention provides a method of processing a substrate using Double-Patterning (D-P) processing sequences and Electric-Field Enhanced Layers (E-FELs). The D-P processing sequences and E-FELs can be used to create lines, trenches, vias, spacers, contacts, and gate structures using a minimum number of etch processes.

Abstract: A method and system for patterning a substrate using a dual-tone development process is described. The method and system comprise using a resist material having a polymer backbone with a plurality of protecting groups attached thereto to improve process latitude and critical dimension uniformity for the dual-tone development process.

Abstract: A method and system for patterning a substrate using a dual-tone development process is described. The method and system comprise using a resist material having a polymer backbone with a plurality of protecting groups attached thereto to improve process latitude and critical dimension uniformity for the dual-tone development process.

Abstract: A method of patterning a substrate using a dual-tone development process is described. The patterning method comprises forming a layer of radiation-sensitive material on a substrate, wherein the layer of radiation-sensitive material comprises a dual tone resist. Thereafter, the patterning method comprises performing one or more exposures of the layer of radiation-sensitive material to one or more patterns of radiation, wherein at least one of the one or more exposures comprises using a mask having a dual-tone mask pattern region configured for printing dual tone features and a half-tone mask pattern region configured for printing half-tone features. Furthermore, the half-tone mask pattern region is optimized for use with the dual tone resist.

Abstract: A method for patterning a substrate is described. In particular, the invention relates to a method for double patterning a substrate using dual tone development. Further, the invention relates to optimizing a dual tone development process.

Abstract: A method for patterning a substrate is described. In particular, the invention relates to a method for double patterning a substrate using dual tone development. Further, the invention relates to optimizing a dual tone development process.

Abstract: The invention provides apparatus and methods for processing substrates using a hot-spot library.

Abstract: A method is provided for forming a stable thin film on a substrate. The method includes depositing a co-polymer composition having a first component and a second component onto a substrate to form a stable film having a first thickness. The first component has first dielectric properties not enabling the first component by itself to produce the stable film having the first thickness. However, the second component has second dielectric properties which impart stability to the film at the first thickness. In a preferred embodiment, the second component includes a leaving group, and the method further includes first thermal processing the film to cause a solvent but not the leaving group to be removed from the film, after which second thermal processing is performed to at least substantially remove the leaving group from the film. As a result, the film is reduced to a second thickness smaller than the first thickness, and the film remains stable during both the first and the second thermal processing.

Abstract: An antireflective coating that contains at least two polymer components and comprises chromophore moieties and transparent moieties is provided. The antireflective coating is useful for providing a single-layer composite graded antireflective coating formed beneath a photoresist layer.