Abstract: A structure, comprising: a semiconductor structure having an electrically and thermally conductive layer disposed on one surface of the semiconductor structure; an electrically and thermally conductive heat sink; a electrically and thermally conductive carrier layer; a plurality of electrically and thermally nano-tubes, a first portion of the plurality of nano-tubes having proximal ends disposed on a first surface of the carrier layer and a second portion of the plurality of nano-tubes having proximal ends disposed on an opposite surface of the carrier layer; and a plurality of electrically and thermally conductive heat conductive tips disposed on distal ends of the plurality of nano-tubes, the plurality of heat conductive tips on the first portion of the plurality of nano-tubes being attached to the conductive layer, the plurality of heat conductive tips on the second portion of the plurality of nano-tubes being attached to the heat sink.

Abstract: In one aspect, a method includes fabricating a gallium nitride (GaN) layer with a first diamond layer having a first thermal conductivity and a second diamond layer having a second thermal conductivity greater than the first thermal conductivity. The fabricating includes using a microwave plasma chemical vapor deposition (CVD) process to deposit the second diamond layer onto the first diamond layer.

Abstract: In one aspect, a method includes fabricating a gallium nitride (GaN) layer with a first diamond layer having a first thermal conductivity and a second diamond layer having a second thermal conductivity greater than the first thermal conductivity. The fabricating includes using a microwave plasma chemical vapor deposition (CVD) process to deposit the second diamond layer onto the first diamond layer.

Abstract: In one aspect, a method includes fabricating a gallium nitride (GaN) layer with a first diamond layer having a first thermal conductivity and a second diamond layer having a second thermal conductivity greater than the first thermal conductivity. The fabricating includes using a microwave plasma chemical vapor deposition (CVD) process to deposit the second diamond layer onto the first diamond layer.

Abstract: In one aspect, a method includes fabricating a device. The device includes a gallium nitride (GaN) layer, a diamond layer disposed on the GaN layer and a gate structure disposed in contact with the GaN layer and the diamond layer. In another aspect, a device includes a gallium nitride (GaN) layer, a diamond layer disposed on the GaN layer and a gate structure disposed in contact with the GaN layer and the diamond layer.

Abstract: A method for forming an RuOx electrode comprising depositing a TiW layer on an RuOx layer, forming a photo-resist mask on the TiW layer, in order to mask the TiW layer into a masked TiW layer, etching the masked TiW layer with a CF4 plasma, a TiW mask being formed on the RuOx layer, the CF4 plasma is not etching the RuOx and vaporizing unmasked RuOx portion of the RuOx layer with an oxygen plasma, the masked RuOx layer being formed into an RuOx electrode.

Abstract: A heterostructure having a heterojunction comprising: a diamond layer; and a boron aluminum nitride (B(x)Al(1-x)N) layer disposed in contact with a surface of the diamond layer, where x is between 0 and 1.

Abstract: A heterostructure having a heterojunction comprising: a diamond layer; and a boron aluminum nitride (B(x)Al(1?x)N) layer disposed in contact with a surface of the diamond layer, where x is between 0 and 1.

Abstract: A heterostructure having a heterojunction comprising: a diamond layer; and a boron aluminum nitride (B(x)Al(1-x)N) layer disposed in contact with a surface of the diamond layer, where x is between 0 and 1.

Abstract: A piezoelectric fluid control valve (10) and fluid control method using a polymorph (48) with a characteristic that as a potential difference is applied thereto, the polymorph is deflected. The valve includes a supply port (14) for introducing fluid and a chamber (16) defined within the valve body. An outlet port (18) is in fluid communication with the chamber and a device controlled thereby, such as an anti-lock brake system. A relief port (78) returns fluid to a source thereof. Upper and lower metering elements (100, 116) are supported within the chamber. A cantilevered spring valve (128, 130) is positionable within metering orifices defined within the metering elements (100, 110). The polymorph is positioned between and in operative communication therewith. An electrical circuit (56) is connected to the polymorph, the circuit providing the potential difference thereto, which is regulated in accordance with an input signal delivered to the circuit.