Abstract: A display that includes a plurality of contiguous pixel areas. Each pixel area is divided into subpixels for displaying and a photodetector for imaging. The display can be configured into a display mode to display information using the subpixels for displaying or an imaging mode to capture image information using the photodetectors for imaging.

Abstract: A display that includes a plurality of contiguous pixel areas. Each pixel area is divided into subpixels for displaying and a photodetector for imaging. The display can be configured into a display mode to display information using the subpixels for displaying or an imaging mode to capture image information using the photodetectors for imaging.

Abstract: A method of calibrating a tunable laser includes shifting a filter output peak defined by a tunable optical feedback filter of the tunable laser in an optical spectral domain to align with a target etalon output peak of a plurality of spaced etalon output peaks defined by an etalon of the tunable laser. The method also includes shifting a cavity frequency grid defined by cavity modes of the tunable laser to align a target cavity mode of the cavity frequency grid with the filter output peak and shifting the spaced output peaks defined by the etalon to align a target etalon output peak with a target wavelength of an output wavelength grid. The method includes modifying a bias current and a modulation current of a gain section of the tunable laser to achieve a defined output modulation amplitude and a defined extinction ratio.

Abstract: A method of calibrating a tunable laser having a distributed Bragg reflector includes, aligning a reflection peak of the distributed Bragg reflector with a target cavity mode of a plurality of cavity modes defined by a total optical path length inside a resonant cavity of the tunable laser. The method includes aligning a resultant lasing mode with a target wavelength of an output wavelength grid. The resultant lasing mode is formed by alignment of the reflection peak of the distributed Bragg reflector with the target cavity mode. The method also includes setting a target output power and a target extinction ratio of the tunable laser.

Abstract: A wavelength tunable laser includes a gain section, a grating section, and an isolation section. The gain section generates and modulates an optical signal. The grating section is positioned adjacent to the gain section, and the isolation section is disposed between the gain section and the grating section. The isolation section impedes conduction of an electrical current between the gain section and the grating section.

Abstract: A local area network system that includes a residential gateway in wired communication with a remote service provider and multiple set top boxes in wired communication with the residential gateway. Each set top box includes a network extender having a wired connection to a residential gateway of a local area network, a media player in communication with the network extender, and at least one wireless transceiver in communication with the network extender. The media player includes a computing processor executing instructions to format a signal received from the network extender for use by a media device. Each set top box is configured as an access point for a local area network of the residential gateway.

Abstract: A local area network system that includes a residential gateway in wired communication with a remote service provider and multiple set top boxes in wired communication with the residential gateway. Each set top box includes a network extender having a wired connection to a residential gateway of a local area network, a media player in communication with the network extender, and at least one wireless transceiver in communication with the network extender. The media player includes a computing processor executing instructions to format a signal received from the network extender for use by a media device. Each set top box is configured as an access point for a local area network of the residential gateway.

Abstract: To a laser that has no tracking error a desired laser modulation current to maintain constant Optical Modulation Amplitude (OMA) is closely proportional to the laser bias current, lb, at any temperature when the laser is under constant power according to embodiments. To a laser that has tracking error a desired laser modulation current to maintain constant Optical Extension Ratio (ER) is closely proportional to the laser bias current, lb, at any temperature when the laser is under constant power according to embodiments. This phenomenon is appears apply to many if not all types of lasers. A laser modulation control is provided that determines a modulation current based on the laser bias current. Thus, embodiments may maintain performance and compensate for temperature changes without the need to actually measure temperature thereby eliminating the need for temperature sensors and their associated parameter vs. temperature look-up tables or dithering techniques used in the past.

Abstract: A set top box including a network extender and a media player in communication with the network extender. The network extender is connectable to a residential gateway of a local area network through a wired connection. The media player includes a computing processor executing instructions to format a signal received from the network extender for use by a media device. The set top box also includes at least one wireless transceiver in communication with the network extender.

Abstract: A method and an apparatus for dechucking an electrostatic chuck are disclosed. The gas escapes through an opening between a wafer and a chuck in each stage of a multi-stages process. In each stage, during at least a portion of the stage, the chucking voltage is reduced to a value less than the least threshold voltage needed for holding the wafer, so that the wafer is pushed away from the chuck by the gas. Hence, the gas can escape from an opening between the wafer and the chuck, thereby increasing the dechucking rate. By controlling the decrement and/or the duration of the reduced voltage, any potential damages due to the pushed-away wafer can be minimized.

Abstract: A current branch circuit is electrically coupled with a Faraday cup and an operation amplifier separately. The Faraday cup, the current branch circuit and the operation amplifier are formed as a portion of an ion implanter. When the Faraday cup is electrically coupled with a ground through a conductive structure formed by an ion beam received by the Faraday cup, a current flows from the output of the operation amplifier to the current branch circuit to balance another current flow from the current branch circuit through the Faraday cup to the ground. By dynamically monitoring the voltage of the output of the operation amplifier, current flows through the Faraday cup to the ground and through the resistance of the conductive structure can be dynamically monitored. Accordingly, the difference between the ion current measured by the Faraday cup and the real ion current implanted to the wafer can be dynamically acquired to avoid overdosage of the wafer with the ion beam.

Abstract: In one embodiment, an integrated circuit includes a substrate having high voltage transistor regions and low voltage transistor regions. The substrate includes a first trench between and adjacent to the high voltage transistor regions, a second trench between and adjacent to the low voltage transistor regions, and a third trench between the first and second trenches and between and adjacent to a high voltage transistor region and a low voltage transistor region. A thicker silicon dioxide layer lines the first trench and a first portion of the third trench adjacent to a high voltage transistor region. A thinner silicon dioxide layer lines the second trench and a second portion of the third trench adjacent to a low voltage transistor region.

Abstract: A method of manufacturing an integrated circuit includes etching a substrate to create simultaneously a first trench between high voltage transistor regions of the substrate and a second trench between low voltage regions of the substrate. The substrate is then oxidized to form a silicon dioxide layer lining the first and second trenches, the layer having a first thickness. A silicon nitride layer is deposited on the silicon dioxide layer in the first and second trenches. The silicon nitride layer is then etched from the first trench but not from the second trench, thereby exposing the silicon layer in the first trench but not the second trench. The exposed silicon dioxide layer in the first trench is oxidized to increase the thickness of the silicon dioxide layer to a second thickness greater than the first thickness of the unexposed silicon dioxide layer in the second trench. The first and second trenches are then filled with a dielectric material.

Abstract: A method and an apparatus for dechucking an electrostatic chuck are disclosed. The gas escapes through an opening between a wafer and a chuck in each stage of a multi-stages process. In each stage, during at least a portion of the stage, the chucking voltage is reduced to a value less than the least threshold voltage needed for holding the wafer, so that the wafer is pushed away from the chuck by the gas. Hence, the gas can escape from an opening between the wafer and the chuck, thereby increasing the dechucking rate. By controlling the decrement and/or the duration of the reduced voltage, any potential damages due to the pushed-away wafer can be minimized.

Abstract: A current branch circuit is electrically coupled with a Faraday cup and an operation amplifier separately. The Faraday cup, the current branch circuit and the operation amplifier are formed as a portion of an ion implanter. When the Faraday cup is electrically coupled with a ground through a conductive structure formed by an ion beam received by the Faraday cup, a current flows from the output of the operation amplifier to the current branch circuit to balance another current flow from the current branch circuit through the Faraday cup to the ground. By dynamically monitoring the voltage of the output of the operation amplifier, current flows through the Faraday cup to the ground and through the resistance of the conductive structure can be dynamically monitored. Accordingly, the difference between the ion current measured by the Faraday cup and the real ion current implanted to the wafer can be dynamically acquired to avoid overdosage of the wafer with the ion beam.

Abstract: In one embodiment of the invention, a flash memory is provided that includes: a plurality of flash memory cells sharing a common drain node and a common source node; and a current source that controls the current into the common source node.

Abstract: A three-port receptacle connects both single-prong and three-prong electrical connectors of electrosurgical accessories to an electrosurgical generator. The receptacle includes two control ports for accepting the two control prongs of the three-prong connector and an energy-delivery port for accepting the energy-conducting prong of the three-prong connector. The energy-delivery port also receives an energy-conducting prong of a single-prong connector. A single contact assembly is located behind the energy-delivery port and delivers electrosurgical power to the energy-conducting prongs of both types of accessory connectors.