Abstract: A method for optimizing the optical transfer of a mask pattern onto a substrate using a lithographic apparatus, the lithographic apparatus including an illuminator configured to illuminate the mask pattern, the method including determining a plurality of illumination arrangements for a pupil plane of the illuminator, each of the plurality of illumination arrangements being determined to improve a respective lithographic performance response parameter when illuminating the mask pattern; and adjusting an intensity of a first illumination arrangement of the plurality of illumination arrangements relative to a second illumination arrangement of the plurality of illumination arrangements, the mask pattern to be illuminated with the first and second illumination arrangements. The mask pattern may be illuminated at least once for each of the first and second illumination arrangements or all at once with at least the first illumination arrangement and the second illumination arrangement.

Abstract: A method for optimizing the illumination conditions of a lithographic apparatus by computer simulation, the lithographic apparatus including an illuminator and a projection system, includes defining a lithographic pattern to be printed on the substrate, selecting a simulation model, selecting a grid of source points in a pupil plane of the illuminator, calculating separate responses for individual source points, each of the responses representing a result of a single or series of simulations using the simulation model, and adjusting an illumination arrangement based on analysis of accumulated results of the separate calculations.

Abstract: A method for optimizing the illumination conditions of a lithographic apparatus by computer simulation using isofocal compensation, the lithographic apparatus including an illuminator, a projection system and a mask having at least one pattern to be printed on a substrate. This method includes defining a lithographic pattern to be printed on the substrate, selecting a simulation model, selecting a grid of source points in a pupil plane of the illuminator, calculating separate responses for individual source points, each of the responses representing a result of a single or series of simulations using the simulation model, calculating a metric representing variation of the separate responses for individual source points with defocus and adjusting an illumination arrangement based on analysis of the metric.

Abstract: A method for optimizing the illumination conditions of a lithographic apparatus by computer simulation using full resist calculation, the lithographic apparatus comprising an illuminator, a projection system, and a mask having a pattern to be printed in a layer of photoresist material formed on a substrate. This method includes defining a lithographic 0problem, which may include a lithographic pattern to be printed on a wafer; choosing a resist model of a resist process to be used to print a pattern in the layer of photoresist material; selecting a grid of source points in a pupil plane of the illuminator; calculating separate responses for individual source points, each of the responses representing a result of a single or series of simulations using the resist model; and adjusting an illumination arrangement based on analysis of accumulated results of the separate calculations.

Abstract: A method for optimizing the illumination conditions of a lithographic apparatus by computer simulation using full resist calculation, the lithographic apparatus comprising an illuminator, a projection system, and a mask having a pattern to be printed in a layer of photoresist material formed on a substrate. This method includes defining a lithographic problem, which may include a lithographic pattern to be printed on a wafer; choosing a resist model of a resist process to be used to print a pattern in the layer of photoresist material; selecting a grid of source points in a pupil plane of the illuminator; calculating separate responses for individual source points, each of the responses representing a result of a single or series of simulations using the resist model; and adjusting an illumination arrangement based on analysis of accumulated results of the separate calculations.

Abstract: A method for optimizing the illumination conditions of a lithographic apparatus by computer simulation, the lithographic apparatus including an illuminator and a projection system, includes defining a lithographic pattern to be printed on the substrate, selecting a simulation model, selecting a grid of source points in a pupil plane of the illuminator, calculating separate responses for individual source points, each of the responses representing a result of a single or series of simulations using the simulation model, and adjusting an illumination arrangement based on analysis of accumulated results of the separate calculations.

Abstract: A method for optimizing the illumination conditions of a lithographic apparatus by computer simulation using isofocal compensation, the lithographic apparatus including an illuminator, a projection system and a mask having at least one pattern to be printed on a substrate. This method includes defining a lithographic pattern to be printed on the substrate, selecting a simulation model, selecting a grid of source points in a pupil plane of the illuminator, calculating separate responses for individual source points, each of the responses representing a result of a single or series of simulations using the simulation model, calculating a metric representing variation of the separate responses for individual source points with defocus and adjusting an illumination arrangement based on analysis of the metric.