Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a bidirectional device, methods of manufacture and methods of operation. The structure includes: a first gate structure adjacent to a first source region; a second gate structure adjacent to a second source region; and field plates adjacent to the first gate structure, the second gate structure and a surface of an active layer of the first gate structure and the second gate structure.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a high-electron-mobility transistor (HEMT) and methods of manufacture. The structure includes: a gate structure; a source contact and a drain contact adjacent to the gate structure; and a field plate electrically isolated from the gate structure and abutting the source contact and the drain contact.

Abstract: The present disclosure relates to a structure which includes at least one gate structure over semiconductor material, the at least one gate structure comprising an active layer, a gate metal extending from the active layer and a sidewall spacer on sidewalls of the gate metal, and a field plate aligned with the at least one gate structure and isolated from the gate metal by the sidewall spacer.

Abstract: Embodiments of the disclosure provide an electrically programmable fuse (efuse) over crystalline semiconductor material. A structure according to the disclosure includes a plurality of crystalline semiconductor layers. Each crystalline semiconductor layer includes a compound material. A metallic layer is on the plurality of crystalline semiconductor layers. The metallic layer has a lower resistivity than an uppermost layer of the plurality of crystalline semiconductor layers. A pair of gate conductors is on respective portions of the metallic layer. The metallic layer defines an electrically programmable fuse (efuse) link between the gate conductors.

Abstract: A structure includes a negative temperature coefficient (NTC) resistor for use in gallium nitride (GaN) technology. The NTC resistor includes a p-type doped GaN (pGaN) layer, and a gallium nitride (GaN) heterojunction structure under the pGaN layer. The GaN heterojunction structure includes a barrier layer and a channel layer. An isolation region extends across an interface of the barrier layer and the channel layer, and a first metal electrode is on the pGaN layer spaced from a second metal electrode on the pGaN layer. The NTC resistor can be used as a temperature compensated reference in a structure providing a temperature detection circuit. The temperature detection circuit includes an enhancement mode HEMT sharing parts with the NTC resistor and includes temperature independent current sources including depletion mode HEMTs.

Abstract: A structure for an III-V integrated circuit includes an integrated depletion and enhancement mode gallium nitride high electron mobility transistors (HEMTs). The structure includes a first, depletion mode HEMT having a first source, a first drain and a first fieldplate gate between the first source and the first drain, and a second, enhancement mode HEMT having a second source and a second drain. The second HEMT also includes a gallium nitride (GaN) gate and a second fieldplate gate between the second source and the second drain. The second fieldplate gate of the second HEMT may be closer to the second drain than the GaN gate. The structure provides a reliable, low leakage, high voltage depletion mode HEMT (e.g., with operating voltages of greater than 100V, but with a pinch-off voltage of less than 6 Volts) integrated with a gallium nitride (GaN) gate-based enhancement mode HEMT.

Abstract: An integrated circuit (IC) structure includes a long channel (LC) gate structure over a long channel region, the LC gate structure having a first gate height; and a short channel (SC) gate structure over a short channel region, the SC gate structure having a second gate height. The short channel region is shorter in length than the long channel region. The second gate height of the SC gate structure is no larger than the first gate height of the LC gate structure.

Abstract: An integrated circuit (IC) structure includes a long channel (LC) gate structure over a long channel region, the LC gate structure having a first gate height; and a short channel (SC) gate structure over a short channel region, the SC gate structure having a second gate height. The short channel region is shorter in length than the long channel region. The second gate height of the SC gate structure is no larger than the first gate height of the LC gate structure.

Abstract: The present disclosure relates to methods for forming replacement metal gate (RMG) structures and related structures. A method may include: forming a portion of sacrificial material around each fin of a set of adjacent fins; forming a first dielectric region between the portions of sacrificial material; forming a second dielectric region on the first dielectric region; forming an upper source/drain region from an upper portion of each fin; removing only the second dielectric region and the sacrificial material; and forming a work function metal (WFM) in place of the second dielectric region and the sacrificial material. The semiconductor structure may include gate structures surrounding adjacent fins; a first dielectric region between the gate structures; a second dielectric region above the first dielectric region and between the gate structures; and a liner between the first dielectric region and the gate structures such that the second dielectric region directly contacts the gate structures.

Abstract: A method includes forming an isolation pillar between first and second active nanostructures for adjacent FETs. A first WFM for one FET is deposited over the first active nanostructure, the pillar and the second active nanostructure. The first WFM is removed from a part of the pillar. The removing creates a discontinuity in the first WFM over the first active nano structure from the first WFM over the second active nanostructure but leaves the first WFM on sidewalls of the pillar. When the first WFM surrounding the second active nanostructure is removed, the pillar and the discontinuity in the first metal on the part of the pillar prevent the etching from reaching and removing the first WFM on the first active nanostructure. Depositing a second WFM surrounding the second active nanostructure and the isolation pillar forms part of the gate for the second FET and couples the FETs together.

Abstract: The present disclosure relates to methods for forming replacement metal gate (RMG) structures and related structures. A method may include: forming a portion of sacrificial material around each fin of a set of adjacent fins; forming a first dielectric region between the portions of sacrificial material; forming a second dielectric region on the first dielectric region; forming an upper source/drain region from an upper portion of each fin; removing only the second dielectric region and the sacrificial material; and forming a work function metal (WFM) in place of the second dielectric region and the sacrificial material. The semiconductor structure may include gate structures surrounding adjacent fins; a first dielectric region between the gate structures; a second dielectric region above the first dielectric region and between the gate structures; and a liner between the first dielectric region and the gate structures such that the second dielectric region directly contacts the gate structures.

Abstract: A method for forming a buried local interconnect in a source/drain region is disclosed including, among other things, forming a plurality of VOC structures, forming a first source/drain region between a first pair of the plurality of VOC structures, forming a second source/drain region between a second pair of the plurality of VOC structures, and forming an isolation structure between the first and second source/drain regions. A first trench is formed in the first and second source/drain regions and the isolation structure. A liner layer is formed in the first trench, and a first conductive line is formed in the first trench. A dielectric material is formed above the first conductive line. A first opening is formed in the dielectric material to expose a portion of the first conductive line. A first conductive feature is formed in the first opening contacting the exposed portion of the first conductive line.

Abstract: One illustrative method disclosed herein includes, among other things, forming a vertically oriented channel semiconductor structure above a substrate, performing an epi deposition process to simultaneously form at least a portion of a bottom source/drain region and at least a portion of a top source/drain region during the epi deposition process and, after performing the epi deposition process, forming a gate structure around a portion of the vertically oriented channel semiconductor structure.

Abstract: The present disclosure relates generally to wrap around contact formation in source/drain regions of a semiconductor device such as an integrated circuit (IC), and more particularly, to stacked IC structures containing complementary FETs (CFETs) having wrap around contacts and methods of forming the same. Disclosed is a stacked IC structure including a first FET on a substrate, a second FET vertically stacked above the first FET, a dielectric layer above the second FET, and a spacer layer between FETs, wherein each FET has an electrically isolated wrap-around contact formed therearound.

Abstract: The present disclosure relates generally to wrap around contact formation in source/drain regions of a semiconductor device such as an integrated circuit (IC), and more particularly, to stacked IC structures containing complementary FETs (CFETs) having wrap around contacts and methods of forming the same. Disclosed is a stacked IC structure including a first FET on a substrate, a second FET vertically stacked above the first FET, a dielectric layer above the second FET, and a spacer layer between FETs, wherein each FET has an electrically isolated wrap-around contact formed therearound.

Abstract: One illustrative method disclosed herein includes, among other things, defining a cavity in a plurality of layers of material positioned above a bottom source/drain (S/D) layer of semiconductor material, wherein a portion of the bottom source/drain (S/D) layer of semiconductor material is exposed at the bottom of the cavity, and performing at least one epi deposition process to form a vertically oriented channel semiconductor structure on the bottom source/drain (S/D) layer of semiconductor material and in the cavity and a top source/drain (S/D) layer of semiconductor material above the vertically oriented channel semiconductor structure. In this example, the method further includes removing at least one of the plurality of layers of material to thereby expose an outer perimeter surface of the vertically oriented channel semiconductor structure and forming a gate structure around the vertically oriented channel semiconductor structure.

Abstract: One illustrative method disclosed herein includes, among other things, forming a vertically oriented channel semiconductor structure above a substrate, performing an epi deposition process to simultaneously form at least a portion of a bottom source/drain region and at least a portion of a top source/drain region during the epi deposition process and, after performing the epi deposition process, forming a gate structure around a portion of the vertically oriented channel semiconductor structure.

Abstract: One illustrative method disclosed herein includes, among other things, defining a cavity in a plurality of layers of material positioned above a bottom source/drain (S/D) layer of semiconductor material, wherein a portion of the bottom source/drain (S/D) layer of semiconductor material is exposed at the bottom of the cavity, and performing at least one epi deposition process to form a vertically oriented channel semiconductor structure on the bottom source/drain (S/D) layer of semiconductor material and in the cavity and a top source/drain (S/D) layer of semiconductor material above the vertically oriented channel semiconductor structure. In this example, the method further includes removing at least one of the plurality of layers of material to thereby expose an outer perimeter surface of the vertically oriented channel semiconductor structure and forming a gate structure around the vertically oriented channel semiconductor structure.

Abstract: One illustrative method disclosed herein includes forming a multi-layered sidewall spacer (MLSS) around a vertically oriented channel semiconductor structure, wherein the MLSS comprises a non-sacrificial innermost first spacer (a high-k insulating material), a sacrificial outermost spacer and at least one non-sacrificial second spacer (a metal-containing material) positioned between the innermost spacer and the outermost spacer, removing at least a portion of the sacrificial outermost spacer from the MLSS while leaving the at least one non-sacrificial second spacer and the non-sacrificial innermost first spacer in position and forming a final conductive gate electrode in place of the removed sacrificial outermost spacer.

Abstract: One illustrative method disclosed herein includes forming a multi-layered sidewall spacer (MLSS) around a vertically oriented channel semiconductor structure, wherein the MLSS comprises a non-sacrificial innermost first spacer (a high-k insulating material), a sacrificial outermost spacer and at least one non-sacrificial second spacer (a metal-containing material) positioned between the innermost spacer and the outermost spacer, removing at least a portion of the sacrificial outermost spacer from the MLSS while leaving the at least one non-sacrificial second spacer and the non-sacrificial innermost first spacer in position and forming a final conductive gate electrode in place of the removed sacrificial outermost spacer.