Patents by Inventor Steven J. Spector

Steven J. Spector has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20160245895
    Abstract: A zero-optical-path-length-difference optical phased array built with essentially planar photonic devices determines a direction to an incoherent optical source, such as a star. The phased array can replace a 3-dimensional star tracker with a nearly 2-dimensional system that is smaller and lighter. The zero-optical-path-length-difference phased array can be optically connected to an interferometer. Driven by a light source, the zero-optical-path-length-difference phased array can be used as an optical projector.
    Type: Application
    Filed: February 24, 2016
    Publication date: August 25, 2016
    Inventors: Benjamin F. Lane, Steven J. Spector
  • Patent number: 8818150
    Abstract: Method and apparatus for modulation of both the intensity and the polarization of radiation in silicon waveguides by applying a biasing voltage to the waveguide.
    Type: Grant
    Filed: March 30, 2007
    Date of Patent: August 26, 2014
    Assignee: Massachusetts Institute of Technology
    Inventors: Matthew E. Grein, Theodore M. Lyszczarz, Michael W. Geis, Steven J. Spector, Donna M. Lennon, Yoon Jung
  • Patent number: 8749871
    Abstract: An optical structure for generating nonreciprocal loss is provided that includes a first substrate layer and a magneto-optical layer positioned on the first substrate layer. The magneto-optical layer achieves nonreciprocity with application of an external magnetic field so as to produce resonantly enhanced nonreciprocal loss.
    Type: Grant
    Filed: March 7, 2012
    Date of Patent: June 10, 2014
    Assignee: Massachusetts Institute of Technology
    Inventors: Juan C. Montoya, Steven J. Spector, Reuel Swint, Caroline A. Ross
  • Publication number: 20120236389
    Abstract: An optical structure for generating nonreciprocal loss is provided that includes a first substrate layer and a magneto-optical layer positioned on the first substrate layer. The magneto-optical layer achieves nonreciprocity with application of an external magnetic field so as to produce resonantly enhanced nonreciprocal loss.
    Type: Application
    Filed: March 7, 2012
    Publication date: September 20, 2012
    Applicant: MASSACHUSETTS INSTITUTE OF TECHNOLOGY
    Inventors: Juan C. Montoya, Steven J. Spector, Reuel Swint, Caroline A. Ross
  • Patent number: 7880204
    Abstract: A Silicon photodetector contains an insulating substrate having a top surface and a bottom surface. A Silicon layer is located on the top surface of the insulating substrate, where the Silicon layer contains a center region, the center region being larger in thickness than the rest of the Silicon layer. A top Silicon dioxide layer is located on a top surface of the center region. A left wing of the center region and a right wing of the center region are doped. The Silicon photodetector also has an active region located within the center region, where the active region contains a tailored crystal defect-impurity combination and Oxygen atoms.
    Type: Grant
    Filed: October 2, 2006
    Date of Patent: February 1, 2011
    Assignee: Massachusetts Institute of Technology
    Inventors: Michael W. Geis, Steven J. Spector, Donna M. Lennon, Matthew E. Grein, Robert T. Schulein, Jung U. Yoon, Franz Xaver Kaertner, Fuwan Gan, Theodore M. Lyszczarz
  • Publication number: 20100025787
    Abstract: A Silicon photodetector contains an insulating substrate having a top surface and a bottom surface. A Silicon layer is located on the top surface of the insulating substrate, where the Silicon layer contains a center region, the center region being larger in thickness than the rest of the Silicon layer. A top Silicon dioxide layer is located on a top surface of the center region. A left wing of the center region and a right wing of the center region are doped. The Silicon photodetector also has an active region located within the center region, where the active region contains a tailored crystal defect-impurity combination and Oxygen atoms.
    Type: Application
    Filed: October 2, 2006
    Publication date: February 4, 2010
    Applicant: Massachusetts Institute of Technology
    Inventors: Michael W. Geis, Steven J. Spector, Donna M. Lennon, Matthew E. Grein, Robert T. Schulein, Jung U. Yoon, Franz Xaver Kaertner, Fuwan Gan, Theodore M. Lyszczarz