Abstract: Systems, methods and computer software are disclosed for providing base station and Remote Radio Head (RRH) functionality. In one embodiment, a method is disclosed, the method for providing base station and Remote Radio Head (RRH) functionality in a base station, comprising: providing a baseband card; providing a radio head, the radio head coupled to the baseband card by way of an interface; and switching, under the control of a processor, between use of the baseband card and use of an external baseband unit for controlling the radio head, the external baseband unit used via a Common Public Radio Interface (CPRI) port, thereby providing dual base station and remote radio head functionality.

Abstract: A device for capturing a line passed into a cavity on a first side of a structure and retrieving the line through to a second side of the structure, the device comprising: (a) a first conduit adapted to define a pathway between the first and second sides of the structure and including: first and second lateral guide members that are opposed and each define a first surface that extends into and along the inside of the first conduit; (b) a mounting member for the first conduit; and (c) a resiliently flexible member capable of being passed through the first conduit and defining a stem portion and a loop portion in the cavity to capture said line.

Abstract: A device for capturing a line passed into a cavity on a first side of a structure and retrieving the line through to a second side of the structure, the device comprising: (a) a first conduit adapted to define a pathway between the first and second sides of the structure and including: first and second lateral guide members that are opposed and each define a first surface that extends into and along the inside of the first conduit; (b) a mounting member for the first conduit; and (c) a resiliently flexible member capable of being passed through the first conduit and defining a stem portion and a loop portion in the cavity to capture said line.

Abstract: The present disclosure relates to optical methods and systems for detecting defects in photovoltaic (PV) devices such as PV cells, PV panels, PV modules, and PV arrays.

Abstract: A sleeve (110) for use in metal casting has a sleeve body, where a longitudinal axis (B) has a side wall (116) formed around it, defining a sleeve interior. The sleeve body is open at a first end (118). A core (120) is formed integrally along an interior surface extends into the sleeve interior. The sleeve body and the core are formed of a gas-permeable refractory material. At least the core contains material for generating heat when heated by a molten metal. The core extends along the side wall from the first end to a second end. The core has a width that is constant or decreases in a radial direction away from the side wall, especially with a triangular profile, with a base thereof in contact with the side wall. The sleeve body is cylindrical or frustoconical, with a diameter that decreases from the open first end.

Abstract: The present disclosure relates to optical methods and systems for detecting defects in photovoltaic (PV) devices such as PV cells, PV panels, PV modules, and PV arrays.

Abstract: A cut-point in the quantitative measurement of PTEN protein expression that accurately identifies tumors with two inactivated alleles of the PTEN gene. Patients with a normalized PTEN score of PTEN null will be treated with a pan-ErbB tyrosine kinase inhibitor. A normalized PTEN protein expression score is obtained by comparing the tumor PTEN OD expression value with the non-malignant PTEN OD expression value.

Abstract: A test casting is useful for predicting the severity of skin that will form when compacted graphite iron or ductile iron is cast using a selected foundry mix. The mold is made from the foundry mix and has a gating system with at least two ingates, and with a hollow cylindrical shape associated with each ingate. The hollow cylindrical shapes are substantially the same height, but the diameter of each varies by at least 20% from the diameter of any of the other cylindrical shapes. Molten metal poured into the gating system fills each of the hollow cylindrical shapes. When the metal cools and solidifies, a solid cylinder of the metal is produced in each hollow cylindrical shape. The solid metal cylinders, each with a distinct diameter, are cut and inspected to measure the skin formed thereon.

Abstract: A process for preparing a test casting useful for predicting the severity of skin that will form on a casting made of compacted graphite iron or ductile iron and the test casting prepared by the process.

Abstract: Noble metal may be used as a non-oxidizing diffusion barrier to prevent diffusion from copper lines. A diffusion barrier may be formed of a noble metal formed over an adhesion promoting layer or by a noble metal cap over an oxidizable diffusion barrier. The copper lines may also be covered with a noble metal.

Abstract: A method for removing damages of a dual damascene structure after plasma etching is disclosed. The method comprises the use of sublimation processes to deposit reactive material onto the damaged regions and conditions to achieve a controlled removal of the damaged region. Furthermore a semiconductor structure comprising a dual damascene structure that has been treated by the method is disclosed.

Abstract: Chemical phase deposition processes utilizing organometallic precursors to form thin films are herein described. The organometallic precursors may include a single metal center or multiple metal centers. The chemical phase deposition may be chemical vapor deposition (CVD), atomic layer deposition (ALD), or hybrid CVD and ALD. The use of these chemical phase deposition processes with the organometallic precursors allows for the conformal deposition of films within openings having widths of less than 100 nm and more particularly less than 50 nm to form thin films such as barrier layers, seed layers, and adhesion layers.

Abstract: A method for forming a metal carbide layer begins with providing a substrate, an organometallic precursor material, at least one doping agent such as nitrogen, and a plasma such as a hydrogen plasma. The substrate is placed within a reaction chamber; and heated. A process cycle is then performed, where the process cycle includes pulsing the organometallic precursor material into the reaction chamber, pulsing the doping agent into the reaction chamber, and pulsing the plasma into the reaction chamber, such that the organometallic precursor material, the doping agent, and the plasma react at the surface of the substrate to form a metal carbide layer. The process cycles can be repeated and varied to form a graded metal carbide layer.

Abstract: A method for forming a semiconductor device is disclosed wherein atomic layer deposition (ALD) precursor species and/or by-product absorbed by an ILD are outgassed and/or neutralized prior to subsequently patterning the semiconductor device, thereby improving the ability to accurately define subsequently formed interconnect structures in the ILD.

Abstract: A method for fabricating a barrier layer and a barrier layer is described which employs a metal selected from the group of Ru, Ir, Pd, Pt, Rh, Os, Au, Ag, W, Ta and Ti. A graded region is formed to cause the metal to adhere to an underlying substrate. Direct plating is enabled without a seed layer.

Abstract: Chemical phase deposition processes utilizing organometallic precursors to form thin films are herein described. The organometallic precursors may include a single metal center or multiple metal centers. The chemical phase deposition may be chemical vapor deposition (CVD), atomic layer deposition (ALD), or hybrid CVD and ALD. The use of these chemical phase deposition processes with the organometallic precursors allows for the conformal deposition of films within openings having widths of less than 100 nm and more particularly less than 50 nm to form thin films such as barrier layers, seed layers, and adhesion layers.

Abstract: A barrier and seed layer for a semiconductor damascene process is described. The seed layer is formed from a noble metal with an intermediate region to prevent oxidation of the barrier between the barrier and noble metal layers to prevent oxidation of the barrier layer.

Abstract: A method for performing a batch spray comprises providing a substrate mounted upon a turntable, rotating the turntable to revolve the substrate around a center axis of the turntable, rotating the substrate independently of the turntable, wherein the rotating of the substrate occurs simultaneously with the rotating of the turntable, and spraying a chemical onto the substrate from at least one fixed location. Rotating the substrate independently of the turntable allows the entire circumference of the substrate to be exposed to the chemical spray. In one implementation, the substrate may be loaded into a process cassette, the process cassette may be mounted on the turntable, and the process cassette may rotate independently of the turntable while the turntable is rotating.

Abstract: Apparatus and methods of fabricating a microelectronic interconnect having an underlayer which acts as both a barrier layer and a seed layer. The underlayer is formed by co-depositing a noble metal and a barrier material, such as a refractory metal, or formed during thermal post-treatment, such as thermal annealing, conducted after two separately depositing the noble metal and the barrier material, which are substantially soluble in one another. The use of a barrier material within the underlayer prevents the electromigration of the interconnect conductive material and the use of noble material within the underlayer allows for the direct plating of the interconnect conductive material.