Abstract: Noble metal may be used as both a diffusion barrier and seed layer to prevent diffusion from copper lines electroplated using the noble metal layer as a seed layer. The barrier and seed layer and the copper layer may be formed in a high aspect ratio trench in one embodiment.

Abstract: Embodiments of the invention provide a relatively hydrophilic layer in a low k dielectric layer. The hydrophilic layer may be formed by exposing the dielectric layer to light having enough energy to break Si—C and C—C bonds but not enough to break Si—O bonds.

Abstract: A dual damascene conductor structure is formed on a substrate with an exposed conductor on top covered by a buried cap, a dielectric layer (DL) and an organic layer (OL). Form trench patterning hard mask and via hard mask layers over the OL. Form a trench pattern hole through the via hard mask layer; and form a via pattern hole through the via hard mask layer and the trench hard mask layer. Etch the via pattern hole into the OL and then etch a via pattern hole into the DL. Etch away the trench pattern layer below the trench pattern hole. Etch away the OL layer below the trench pattern hole. Etch the via hole through the DL exposing the cap while simultaneously partially etching the DL to a final trench depth to form a trench into the DL below the trench pattern hole, with the trench having a bottom above the cap and sidewalls in the DL.

Abstract: Apparatus and methods of fabricating an atomic layer deposited tantalum containing adhesion layer within at least one dielectric material in the formation of a metal, wherein the atomic layer deposition tantalum containing adhesion layer is sufficiently thin to minimize contact resistance and maximize the total cross-sectional area of metal, including but not limited to tungsten, within the contact.

Abstract: Method and apparatus for treating an edge region of a wafer. A toroidal shaped plasma cavity has an inner diameter which is slightly less than the diameter of the wafer being treated so that only the edge region of the wafer extends into the toroidal plasma cavity. An inert gas is flowed across a front and back side of the wafer into the plasma cavity. A reactive gas is flowed directly into the plasma cavity. The gases exit the plasma cavity without flowing over the surface of the wafer.

Abstract: Unwanted films can be eliminated by directing a stream of reactive gas(es) at reactive zone in an edge region of the wafer. The action of the reactive gas can be enhanced by heating the gas in a nozzle, immediately prior to the gas impinging on the wafer. The action of the reactive gas can also be enhanced by ultraviolet (UV) or infrared (IR) radiation directed at the reactive zone. The wafer is rotates so that the reactive zone traverses the entire edge region. Multiple gas/light delivery systems can cause gas and light to impinge on multiple reactive zones, both on the front side and on the back side of the wafer.

Abstract: An interlayer dielectric may be exposed to a gas cluster ion beam to densify an upper layer of the interlayer dielectric. As a result, the upper layer of the interlayer dielectric may be densified without separate deposition steps and without the need for etch stops that may adversely affect the capacitance of the overall structure.

Abstract: This invention relates to a grass cutting apparatus using a generally disk-shaped cutter which is bias against the edge against which it is cutting while allowing some vertical and lateral movement of the cutting disk. The preferred embodiments relate to such a cutting disk provided as an attachment to such additional apparatus such as a motor mower and seeks to decrease the accuracy with which an operator must attempt to keep the mower from the border between the grass and the concrete or similar such material forming a border.