Abstract: Using coated carbon black particles, coated with a selected coating material, as an abrasive in slurries or polishing pads for chemical-mechanical polishing processes. By adjusting the coating material on the carbon black particles, new abrasive particles for chemical-mechanical polishing are created with tailored performance properties.

Abstract: A polishing composition comprising a dispersion of silane-modified abrasive particles formed by combining at least one metal oxide abrasive having at least one surface metal hydroxide with at least one silane compound and methods for polishing substrate features such as metal features and oxide features using the polishing compositions.

Abstract: Polishing compositions comprising at least one soluble silane compound and at least one abrasive that are useful for polishing substrate surface features.

Abstract: Chemical mechanical polishing compositions and slurries comprising a film-forming agent and at least one silane compound wherein the compositions are useful for polishing substrate features such as copper, tantalum, and tantalum nitride features.

Abstract: The invention provides a polishing pad comprising sintered particles of a thermoplastic resin, wherein a surface of the polishing pad intended to contact a substrate to be polished comprises (a) a non-patterned portion with a substantially uniform density and (b) a patterned portion with one or more densities that differ from the density of the non-patterned portion. The invention also provides a method for producing the polishing pad, a chemical-mechanical polishing apparatus comprising the polishing pad, and a method of polishing comprising contacting a substrate with the polishing pad.

Abstract: The invention provides a system for polishing one or more layers of a multi-layer substrate that includes a first metal layer and a second layer comprising (i) a liquid carrier, (ii) at least one oxidizing agent, (iii) at least one polishing additive that increases the rate at which the system polishes at least one layer of the substrate, wherein the polishing additive is selected from the group consisting of pyrophosphates, condensed phosphates, phosphonic acids and salts thereof, amines, amino alcohols, amides, imines, imino acids, nitrites, nitros, thiols, thioesters, thioethers, carbothiolic acids, carbothionic acids, thiocarboxylic acids, thiosalicylic acids, and mixtures thereof, and (iv) a polishing pad and/or an abrasive. The invention also provides a method of polishing a substrate comprising contacting a surface of a substrate with the system and polishing at least a portion of the substrate therewith.

Abstract: The invention provides a system for polishing one or more layers of a multi-layer substrate that includes a first metal layer and a second layer comprising (i) a liquid carrier, (ii) at least one oxidizing agent, (iii) at least one polishing additive that increases the rate at which the system polishes at least one layer of the substrate, (iv) at least one stopping compound with a polishing selectivity of the first metal layer:second layer of at least about 30:1, wherein the stopping compound is a cationically charged nitrogen containing compound selected from compounds comprising amines, imines, amides, imides, and mixtures thereof, and (v) a polishing pad and/or an abrasive. The invention also provides a method of polishing a substrate comprising contacting a surface of a substrate with the system and polishing at least a portion of the substrate therewith.

Abstract: Chemical mechanical polishing compositions and slurries comprising a film forming agent and at least one silane compound wherein the compositions are useful for polishing substrate features such as copper, tantalum, and tantalum nitride features.

Abstract: A polishing composition comprising a dispersion of silane modified abrasive particles formed by combining at least one metal oxide abrasive having at least one surface metal hydroxide with at least one silane compound and methods for polishing substrate features such as metal features and oxide features using the polishing compositions.

Abstract: The invention provides a polishing pad comprising composite particles that comprise a solid core encapsulated by a polymeric shell material, wherein the solid core comprises a material that differs from the polymeric shell material, as well as a method of polishing a substrate with such a polishing pad.

Abstract: The invention provides a chemical-mechanical polishing system comprising an abrasive, a carrier, and either boric acid, or a conjugate base thereof, wherein the boric acid and conjugate base are not present together in the polishing system in a sufficient amount to act as a pH buffer, or a water-soluble boron-containing compound, or salt thereof, that is not boric acid, and a method of polishing a substrate using the chemical-mechanical polishing system.

Abstract: A polishing pad including a polishing pad substrate and a catalyst having multiple oxidation states wherein the catalyst containing polishing pad is used in conjunction with an oxidizing agent to chemically mechanically polish metal features associated with integrated circuits and other electronic devices.

Abstract: The present invention provides a method of polishing and/or cleaning a substrate using a multi-component polishing and/or cleaning composition, wherein the components of the polishing and/or cleaning composition are mixed at the point-of-use or immediately before delivery to the point-of-use. The present invention also provides a method of polishing and/or cleaning more than one substrate simultaneously using a single apparatus, wherein a different polishing or cleaning composition is delivered to each substrate.

Abstract: A chemical mechanical polishing composition comprising a composition capable of etching tungsten and at least one inhibitor of tungsten etching and methods for using the composition to polish tungsten containing substrates.

Abstract: A chemical mechanical polishing composition comprising a composition capable of etching tungsten and one inhibitor of tungsten etching and methods for using the composition to polish tungsten containing substrates.

Abstract: A chemical mechanical polishing precursor comprising at least one catalyst having multiple oxidation states, and at least one stabilizer, the composition being useful when admixed with an oxidizing agent prior to use to remove metal layers from a substrate.

Abstract: A method for polishing computer rigid disks comprising bringing at least one surface of the rigid disk into contact with a polishing pad and applying a dispersion to the rigid disk to give a polished rigid disk having an rms roughness less than about 1.4 nm. Also disclosed is a dispersion and polishing slurry for polishing rigid disks.

Abstract: A chemical mechanical polishing composition comprising an oxidizing agent at least one catalyst having multiple oxidation states, and at least one stabilizer, the composition being useful when combined with an abrasive or with an abrasive pad to remove metal layers from a substrate.

Abstract: A chemical mechanical polishing composition comprising an oxidizing agent and at least one catalyst having multiple oxidation states, the composition being useful when combined with an abrasive or with an abrasive pad to remove metal layers from a substrate.