Abstract: A vehicle may include a continuously variable transmission which requires non-recycled air. The continuously variable transmission may provide non-recycled air to a first number of sheaves of the continuously variable transmission with a second number of air supply conduits, the second number being less than the first number. A cover of the continuously variable transmission may have a unitary body.

Abstract: A vehicle may include a continuously variable transmission which requires non-recycled air. The continuously variable transmission may provide non-recycled air to a first number of sheaves of the continuously variable transmission with a second number of air supply conduits, the second number being less than the first number. A cover of the continuously variable transmission may have a unitary body.

Abstract: A vehicle may include a continuously variable transmission which requires non-recycled air. The continuously variable transmission may provide non-recycled air to a first number of sheaves of the continuously variable transmission with a second number of air supply conduits, the second number being less than the first number. A cover of the continuously variable transmission may have a unitary body.

Abstract: A vehicle may include a continuously variable transmission which requires non-recycled air. The continuously variable transmission may provide non-recycled air to a first number of sheaves of the continuously variable transmission with a second number of air supply conduits, the second number being less than the first number. A cover of the continuously variable transmission may have a unitary body.

Abstract: A method for wet chemical processing of high-aspect-ratio microstructures and exiting the wet chemical processing while avoiding stiction between the high-aspect-ratio microstructures is provided. The method includes providing a substrate containing etched microstructures, removing etch residue from the substrate using wet chemical processing, rinsing the substrate with an aqueous hydrogen fluoride solution after the wet chemical processing, and drying the substrate using an inert gas.

Abstract: A vehicle may include a continuously variable transmission which requires non-recycled air. The continuously variable transmission may provide non-recycled air to a first number of sheaves of the continuously variable transmission with a second number of air supply conduits, the second number being less than the first number. A cover of the continuously variable transmission may have a unitary body.

Abstract: A vehicle may include a continuously variable transmission which requires non-recycled air. The continuously variable transmission may provide non-recycled air to a first number of sheaves of the continuously variable transmission with a second number of air supply conduits, the second number being less than the first number. A cover of the continuously variable transmission may have a unitary body.

Abstract: A method for performing an oxide removal process is described. The method includes providing a substrate having an oxide layer, and preparing a patterned mask layer on the oxide layer, wherein the patterned mask layer has a pattern exposing at least a portion of the oxide layer. An HF treatment of the substrate is performed to transfer the pattern at least partially through the oxide layer, wherein the HF treatment exposes a silicon surface. Following the performing of the HF treatment, a surface property of the silicon surface is modified, wherein the modifying includes administering at least one oxidizing agent to contact the silicon surface to cause chemical oxidation of the silicon surface. And, following the modifying of the surface property, at least a portion of the patterned mask layer or a residual portion of the patterned mask layer is removed.

Abstract: A method for performing an oxide removal process is described. The method includes providing a substrate having an oxide layer, and preparing a patterned mask layer on the oxide layer, wherein the patterned mask layer has a pattern exposing at least a portion of the oxide layer. An HF treatment of the substrate is performed to transfer the pattern at least partially through the oxide layer, wherein the HF treatment exposes a silicon surface. Following the performing of the HF treatment, a surface property of the silicon surface is modified, wherein the modifying includes administering at least one oxidizing agent to contact the silicon surface to cause chemical oxidation of the silicon surface. And, following the modifying of the surface property, at least a portion of the patterned mask layer or a residual portion of the patterned mask layer is removed.

Abstract: Described are methods of rinsing and processing devices such as semiconductor wafers wherein the device is rinsed with using a surface tension reducing agent; the method may include a subsequent drying step which preferably incorporates the use of a surface tension reducing agent during at least partial drying; and the method may be performed using automated rinsing equipment; also described are automated rinsing apparatuses useful with the method.

Abstract: The variability of immersion processes for treatment of semiconductor devices can be significantly lowered by initiating the termination of a treatment process according to a predetermined treatment termination protocol in a manner that takes into account the contribution of, in particular, the treatment that is carried out during the period of time in the treatment process in which the treatment process is being terminated. In a preferred embodiment, conditions that indicate the progress of the treatment on a real time basis are monitored, and the timing of the initiation of the termination process is additionally based on the calculated amount of treatment and treatment rate of the process in progress.

Abstract: A method for increasing the quantity of a gas, e.g., ozone, dissolved in a liquid, e.g., ultrapure deionized water, is provided. The gas to be dissolved is introduced to the liquid under pressure and the resulting admixture delivered to the end-use station under pressure. Thus, the method and system of the present invention are able to provide, e.g., ozonated water, continuously, efficiently and without cooling, thus providing a simple, cost efficient method of producing high concentration ozonated water for application to an in-process semiconductor wafer.

Abstract: A method and system for increasing the quantity of a gas, e.g., ozone, dissolved in a liquid, e.g., ultrapure deionized water, are provided. The gas to be dissolved is introduced to the liquid under pressure and the resulting admixture delivered to the end-use station under pressure Once at the end-use station, the admixture comprising the liquid and dissolved gas is subjected to controlled dispensing. Thus, the method and system of the present invention are able to provide, e.g., ozonated water, continuously, efficiently and without cooling, thus providing a simple, cost efficient method of producing high concentration ozonated water.

Abstract: A method for increasing the quantity of a gas, e.g., ozone, dissolved in a liquid, e.g., ultrapure deionized water, are provided. The gas to be dissolved is introduced to the liquid under pressure and the resulting admixture delivered to the end-use station under pressure. Once at the end-use station, the admixture including the liquid and dissolved gas is subjected to controlled dispensing to maintain a high concentration of gas in the dispensed admixture.

Abstract: Described are methods of rinsing and processing devices such as semiconductor wafers wherein the device is rinsed with using a surface tension reducing agent; the method may include a subsequent drying step which preferably incorporates the use of a surface tension reducing agent during at least partial drying; and the method may be performed using automated rinsing equipment; also described are automated rinsing apparatuses useful with the method.

Abstract: An in-process microelectronic device may be treated by providing a process chamber with an in-process microelectronic device therein, providing an ozone generator and an ozone storage reservoir, the ozone storage reservoir in fluid communication with the ozone generator and the process chamber, generating ozone with the ozone generator for a first period of time and delivering the ozone to the ozone storage reservoir; and subsequently providing ozone from the ozone storage reservoir and the generator to the process chamber during a second period of time different from the first period of time and exposing the in-process microelectronic device thereto.

Abstract: The present invention provides a method for treating a substrate, or a plurality of substrates, so that the treatment thereof is enhanced. In particular, the method includes the steps of causing a heated liquid to contact the substrate(s) and causing a processing liquid to contact the substrate(s). Although the processing liquid comprises a heat sensitive agent, the effectiveness of the processing liquid is not substantially diminished by the application of heat due to the fact that the heat is applied by the application of a separate heated liquid rather than by heating the processing liquid itself. Thus, the application of heat can be utilized to enhance the treatment rate of a substrate surface without a corresponding reduction in effectiveness of the processing liquid.

Abstract: An improved method of photoresist removal is disclosed in which a treating solution of ozone and bicarbonate or other suitable radical scavengers is used to treat a substrate for use in an electronic device. The method is particularly well suited to photoresist removal where certain metals such as aluminum, copper and oxides thereof are present on the surface of the substrate. The method is also well suited to the removal of other organic materials as well.

Abstract: A centrifugal spray processor for dispensing a stream of ozonated water toward one or more semiconductor wafers at a non-parallel angle that is inclined from the plane of the surface of the semiconductor wafer. The spray processor includes one or more supports for receiving a plurality of semiconductor wafers and a spray post for dispensing ozonated water from a reservoir onto the semiconductor wafers. The spray post includes a plurality of nozzles that are configured to dispense ozonated water at a generally downward angle toward the surface of the semiconductor wafer. The angle of incidence of the stream of ozonated water from the spray post as measured from the plane of the semiconductor is greater than 0 degrees, and is preferably greater than about 0 degrees and less than or equal to about 30 degrees depending upon the configuration of the spray post and the semiconductor wafers.

Abstract: An improved method of photoresist removal is disclosed in which a treating solution of ozone and bicarbonate or other suitable radical scavengers is used to treat a substrate for use in an electronic device. The method is particularly well suited to photoresist removal where certain metals such as aluminum, copper and oxides thereof are present on the surface of the substrate. The method is also well suited to the removal of other organic materials as well.