Abstract: In one embodiment, a sub-pad assembly of metal structures is located directly underneath a metal pad. The sub-pad assembly includes an upper level metal line structure abutting the metal pad, a lower level metal line structure located underneath the upper level metal line structure, and a set of metal vias that provide electrical connection between the lower level metal line structure located underneath the upper level metal line structure. In another embodiment, the reliability of a C4 ball is enhanced by employing a metal pad structure having a set of integrated metal vias that are segmented and distributed to facilitate uniform current density distribution within the C4 ball. The areal density of the cross-sectional area in the plurality of metal vias is higher at the center portion of the metal pad than at the peripheral portion of the planar portion of the metal pad.

Abstract: In one embodiment, a sub-pad assembly of metal structures is located directly underneath a metal pad. The sub-pad assembly includes an upper level metal line structure abutting the metal pad, a lower level metal line structure located underneath the upper level metal line structure, and a set of metal vias that provide electrical connection between the lower level metal line structure located underneath the upper level metal line structure. In another embodiment, the reliability of a C4 ball is enhanced by employing a metal pad structure having a set of integrated metal vias that are segmented and distributed to facilitate uniform current density distribution within the C4 ball. The areal density of the cross-sectional area in the plurality of metal vias is higher at the center portion of the metal pad than at the peripheral portion of the planar portion of the metal pad.

Abstract: Structures and methods to reduce maximum current density in a solder ball are disclosed. A method includes forming a contact pad in a last wiring level and forming a plurality of wires of the contact pad extending from side edges of the contact pad to respective ones of a plurality of vias. Each one of the plurality of wires has substantially the same electrical resistance.

Abstract: Provided are methods and related devices for predicting the presence or level of one or more characteristics of a plant or plant population based on spectral, multi-spectral, or hyper-spectral data obtained by, e.g., remote sensing. The predictions and estimates furnished by the inventive methods and devices are useful in crop management, crop strategy, and optimization of agricultural production.

Abstract: In one embodiment, a sub-pad assembly of metal structures is located directly underneath a metal pad. The sub-pad assembly includes an upper level metal line structure abutting the metal pad, a lower level metal line structure located underneath the upper level metal line structure, and a set of metal vias that provide electrical connection between the lower level metal line structure located underneath the upper level metal line structure. In another embodiment, the reliability of a C4 ball is enhanced by employing a metal pad structure having a set of integrated metal vias that are segmented and distributed to facilitate uniform current density distribution within the C4 ball. The area1 density of the cross-sectional area in the plurality of metal vias is higher at the center portion of the metal pad than at the peripheral portion of the planar portion of the metal pad.

Abstract: Forming a silicon carrier interposer having an integrated heater includes forming a multi-layer silicon member having a main body portion including a first surface, a second surface and an intermediate portion, and attaching first and second electronic components to the first surface of the multi-layer silicon member. A plurality of vias extend between the first surface and the second surface and are adapted to provide an interface between the first and second electronic components and a substrate. In addition, a plurality of heating elements are integrated into the main body portion of the multi-layer silicon member. The heating elements are selectively activated to create a reflow of solder to facilitate one of an attachment of one of the first and second electronic components to the multi-layer silicon member and a detachment of the one of the first and second electronic components from the multi-layer silicon member.

Abstract: A method and apparatus for optically interrogating a particle comprising obtaining a plurality of optical interrogations from a plurality of orientations relative the particle. In one aspect, the particle is tumbled relative to optical interrogation direction and reflected or transmitted energy is collected and added into a single spectrum that represents a complete spectral composition of the sample.

Abstract: A silicon carrier package includes a multi-layer member having at least a first layer and a second layer. A first electronic component includes a plurality of connector members that establish a first bond electrically interconnecting the first electronic component to the multi-layer member. A second electronic component includes a plurality of connector members that establish a second bond electrically interconnecting the second electronic component to the multi-layer member. At least one heating element is integrated into one of the first and second layers of the multi-layer member. The at least one heating element is selectively activated to loosen only one of the first and second bonds to facilitate removal of only one of the first and second electronic components from the multi-layer member. The other of the first and second bonds remains intact.

Abstract: A method and apparatus for optically interrogating a particle comprising obtaining a plurality of optical interrogations from a plurality of orientations relative the particle. In one aspect, the particle is tumbled relative to optical interrogation direction and reflected or transmitted energy is collected and added into a single spectrum that represents a complete spectral composition of the sample.

Abstract: Viewing angle characteristics of a liquid crystal display (LCD) are improved by reducing the number of subpixels in an image with mid-tone luminance values. In a preferred embodiment, a first table of entries associating subpixel intensity values and subpixel luminance values for a LCD in at least one viewing angle direction is provided. A target intensity value is determined from the first table, corresponding to the average subpixel luminance over a small number of adjacent subpixels. A second table of entries associates the target intensity values with intensity values above and below the target. The adjacent subpixel intensity values are modified according to the second table, thereby reducing the number of subpixels with mid-tone luminance values. The subpixel data is preferably processed within a portion of an application-specific integrated circuit (ASIC), contained within the display module.

Abstract: An apparatus and method for utilizing NIR spectrography for measuring major constituents of substances in real time includes a monochromator or other sensor having no moving optical parts. At least one of the monochromator and the substance are moving relative to one another. An NIR radiation source irradiates a substance and the reflected or passed-through radiation is transmitted to the monochromator, which isolates and detects narrow portions of the received spectrum. By analyzing the intensities and wavelengths of the received radiation, the presence and amount of major constituents of the substance can be determined.

Abstract: Viewing angle characteristics of a liquid crystal display (LCD) are improved by reducing the number of subpixels in an image with mid-tone luminance values. In a preferred embodiment, a first table of entries associating subpixel intensity values and subpixel luminance values for a LCD in at least one viewing angle direction is provided. A target intensity value is determined from the first table, corresponding to the average subpixel luminance over a small number of adjacent subpixels. A second table of entries associates the target intensity values with intensity values above and below the target. The adjacent subpixel intensity values are modified according to the second table, thereby reducing the number of subpixels with mid-tone luminance values. The subpixel data is preferably processed within a portion of an application-specific integrated circuit (ASIC), contained within the display module.

Abstract: An apparatus and method for combining NIR spectography with an implement including a combine or a chopper for measuring major constituents of harvested products in real time includes a monochromator or other sensor having no moving optical parts. The monochromator includes a fixed diffraction grating and a photodiode collector comprised of a plurality of photodiodes. A radiation source irradiates a product sample and the reflected radiation is transmitted to the diffraction grating. By analyzing the intensities and wavelengths of the reflected radiation at the photodiode collector, the presence and amount of major constituents of the harvested product can be determined. The present invention may be used on or with a research combine or chopper along with the conventional instrumentation which measures the weight, moisture, and volume of products harvested in a test plot.

Abstract: An apparatus and method for combining NIR spectography with a combine for measuring major constituents of harvested grain in real time includes a monochromator having no moving optical parts. The monochromator includes a fixed diffraction grating and a photodiode collector comprised of a plurality of photodiodes. A radiation source irradiates a grain sample while a bundle of fiber optic strands transmits the reflected radiation to the diffraction grating. By analyzing the intensities and wavelengths of the reflected radiation at the photodiode collector, the presence and amount of major constituents of the harvested grain can be determined. The present invention may be used on a research combine along with the conventional instrumentation which measures the weight, moisture, and volume of grain harvested in a test plot.

Abstract: A lateral injection group III-V heterostructure device having self-aligned graded contact diffusion regions of opposite conductivity types and a method of fabricating such devices are disclosed. The device includes a heterojunction formed by a higher bandgap III-V compound semiconductor formed over a lower bandgap III-V compound semiconductor. The method of the present invention allows the opposite conductivity type diffusion regions to diffuse simultaneously and penetrate the heterojunction. This results in compositional mixing of the compound semiconductor materials forming the heterojunction in the diffusion regions.

Abstract: A lateral injection group III-V heterostructure device having self-aligned graded contact diffusion regions of opposite conductivity types and a method of fabricating such devices are disclosed. The device includes a heterojunction formed by a higher bandgap III-V compound semiconductor formed over a lower bandgap III-V compound semiconductor. The method of the present invention allows the opposite conductivity type diffusion regions to diffuse simultaneously and penetrate the heterojunction. This results in compositional mixing of the compound semiconductor materials forming the heterojunction in the diffusion regions.

Abstract: The control of barriers to carrier flow in a contact between a metal and a higher band gap semiconductor employing an intermediate lower band gap semiconductor with doping and greater than 1.5% lattice mismatch. A WSi metal contact of doped InAs on GaAs of 7.times.10.sup.-6 ohm/cm.sup.2 is provided.This is a continuation application of pending prior application Ser. No. 183,473, filed on Apr. 15, 1988 now abandoned which is a continuation of Ser. No. 876,063, filed on June 14, 1986, now abandoned.

Abstract: Unpinned epitaxial metal-oxide-compound semiconductor structures are disclosed and a method of fabricating such structures is described. Epitaxial layers of compound semiconductor are grown by MBE which result in the formation of a smooth surface having a stabilized reconstruction. An elemental semiconductor layer is deposited epitaxially in situ with the compound semiconductor layer which unpins the surface Fermi level. A layer of insulator material is then deposited on the elemental semiconductor layer by PECVD. In one embodiment, the compound semiconductor is GaAs and the elemental semiconductor is Si. The insulator material is a layer of high quality SiO.sub.2. A metal gate is deposited on the SiO.sub.2 layer to form an MOS device. The epitaxial GaAs layer has a density of states which permits the interface Fermi level to be moved through the entire forbidden energy gap. In another embodiment, the SiO.sub.

Abstract: Control of the Fermi level pinning problem and the production of flat band surface performance in compound semiconductors is achieved by providing a cationic oxide free of anionic species on the surface of the semiconductor for flat band performance and with a localized inclusion of some anionic species for barrier performance so that oxide and metal work function responsiveness is available in structure and performance in MOSFET, MESFET and different work function metal FET structures. A cationic gallium oxide is produced on GaAs by oxide growth during illumination and while being rinsed with oxygenated water. The oxidation is used to produce both anionic and cationic species while the rinsing process selectively removes all the anionic species.

Abstract: An alloy layer comprising germanium and silicon is grown on top of a silicon substrate. The alloy layer is kept thin enough for proper pseudomorphic, dislocation free growth. A layer of silicon is applied to the alloy layer. The initial silicon layer is from two to three times as thick as the alloy layer. Approximately the upper two-thirds of the silicon layer is oxidized, either thermally, anodically or by plasma anodization. The silicon layer that remains between the silicon dioxide and the alloy layer is kept thin enough so that a parasitic channel does not form on the interface between the silicon and the silicon dioxide. The germanium alloyed channel is thus suitably bounded by silicon crystalline structures on both of the channel layer surfaces. The barrier heights between silicon dioxide and silicon are very large thus providing good carrie confinement.