Patents by Inventor Steven Lippy

Steven Lippy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • AQUEOUS FORMULATIONS FOR REMOVING METAL HARD MASK AND POST-ETCH RESIDUE WITH Cu/W COMPATIBILITY
    Publication number: 20160185595
    Abstract: Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., tungsten, and insulating materials from a microelectronic device having same thereon. The removal compositions are low pH and contain at least one oxidizing agent and at least one etchant as well as corrosion inhibitors to minimize metal erosion and passivating agents to protect dielectric materials.
    Type: Application
    Filed: July 31, 2014
    Publication date: June 30, 2016
    Inventors: Li-Min CHEN, Steven LIPPY, Daniela WHITE, Enamuel I. COOPER
  • COMPOSITIONS AND METHODS FOR SELECTIVELY ETCHING TITANIUM NITRIDE
    Publication number: 20160130500
    Abstract: Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., cobalt, ruthenium and copper, and insulating materials from a microelectronic device having same thereon. The removal compositions contain at least one oxidant and one etchant, may contain various corrosion inhibitors to ensure selectivity.
    Type: Application
    Filed: June 6, 2014
    Publication date: May 12, 2016
    Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.
    Inventors: Li-Min CHEN, Steven LIPPY, Emanuel I Cooper, Lingyan Song
  • COMPOSITIONS AND METHODS FOR SELECTIVELY ETCHING TITANIUM NITRIDE
    Publication number: 20160032186
    Abstract: Semi-aqueous compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., tungsten and copper, and insulating materials from a microelectronic device having same thereon. The semi-aqueous compositions contain at least one oxidant, at least one etchant, and at least one organic solvent, may contain various corrosion inhibitors to ensure selectivity.
    Type: Application
    Filed: March 4, 2014
    Publication date: February 4, 2016
    Inventors: Li-Min CHEN, Emanuel I. COOPER, Steven LIPPY, Lingyan SONG, Chia-Jung HSU, Sheng-Hung TU, Chieh Ju WANG
  • AQUEOUS CLEANER FOR THE REMOVAL OF POST-ETCH RESIDUES
    Publication number: 20150307818
    Abstract: Cleaning compositions and processes for cleaning post-plasma etch residue from a microelectronic device having said residue thereon. The composition achieves highly efficacious cleaning of the residue material, including titanium-containing, copper-containing, tungsten-containing, and/or cobalt-containing post-etch residue from the microelectronic device while simultaneously not damaging the interlevel dielectric, metal interconnect material, and/or capping layers also present thereon.
    Type: Application
    Filed: June 22, 2015
    Publication date: October 29, 2015
    Inventors: Jeffrey A. Barnes, Steven Lippy, Peng Zhang, Rekha Rajaram
  • Aqueous cleaner for the removal of post-etch residues
    Patent number: 9063431
    Abstract: Cleaning compositions and processes for cleaning post-plasma etch residue from a microelectronic device having said residue thereon. The composition achieves highly efficacious cleaning of the residue material, including titanium-containing, copper-containing, tungsten-containing, and/or cobalt-containing post-etch residue from the microelectronic device while simultaneously not damaging the interlevel dielectric, metal interconnect material, and/or capping layers also present thereon.
    Type: Grant
    Filed: July 15, 2011
    Date of Patent: June 23, 2015
    Assignee: ADVANCED TECHNOLOGY MATERIALS, INC.
    Inventors: Jeffrey A. Barnes, Steven Lippy, Peng Zhang, Rekha Rajaram
  • COMPOSITIONS AND METHODS FOR SELECTIVELY ETCHING TITANIUM NITRIDE
    Publication number: 20150027978
    Abstract: Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., tungsten, and insulating materials from a microelectronic device having same thereon. The removal compositions contain at least one oxidant and one etchant, may contain various corrosion inhibitors to ensure selectivity.
    Type: Application
    Filed: December 27, 2012
    Publication date: January 29, 2015
    Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.
    Inventors: Jeffrey A. Barnes, Emanuel I. Cooper, Li-Min Chen, Steven Lippy, Rekha Rajaram, Sheng-Hung Tu
  • COMPOSITION AND PROCESS FOR SELECTIVELY ETCHING METAL NITRIDES
    Publication number: 20140038420
    Abstract: A removal composition and process for selectively removing a first metal gate material (e.g., titanium nitride) relative to a second metal gate material (e.g., tantalum nitride) from a microelectronic device having said material thereon. The removal composition can include fluoride or alternatively be substantially devoid of fluoride. The substrate preferably comprises a high-k/metal gate integration scheme.
    Type: Application
    Filed: October 6, 2011
    Publication date: February 6, 2014
    Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.
    Inventors: Tianniu Chen, Nicole E. Thomas, Steven Lippy, Jeffrey A. Barnes, Emanuel I. Cooper, Peng Zhang
  • AQUEOUS CLEANER FOR THE REMOVAL OF POST-ETCH RESIDUES
    Publication number: 20130296214
    Abstract: Cleaning compositions and processes for cleaning post-plasma etch residue from a microelectronic device having said residue thereon. The composition achieves highly efficacious cleaning of the residue material, including titanium-containing, copper-containing, tungsten-containing, and/or cobalt-containing post-etch residue from the microelectronic device while simultaneously not damaging the interlevel dielectric, metal interconnect material, and/or capping layers also present thereon.
    Type: Application
    Filed: July 15, 2011
    Publication date: November 7, 2013
    Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.
    Inventors: Jeffrey A. Barnes, Steven Lippy, Peng Zhang, Rekha Rajaram
  • Compositions for cleaning ion implanted photoresist in front end of line applications
    Patent number: 8044009
    Abstract: A front end of the line (FEOL) stripping and cleaning composition for cleaning unashed ion-implanted photoresist from a wafer substrate comprises: a) at least one organic stripping solvent, b) fluoride ions from at least one of ammonium fluoride, ammonium bifluoride or hydrogen fluoride, c) at least one acidifying agent selected from inorganic or organic acids, and d) water, with an oxidizing agent optionally also being present in the composition.
    Type: Grant
    Filed: March 13, 2006
    Date of Patent: October 25, 2011
    Assignee: Avantor Performance Materials, Inc.
    Inventors: Sean Michael Kane, Steven A. Lippy
  • Compositions for Cleaning Ion Implanted Photoresist in Front End of Line Applications
    Publication number: 20080171682
    Abstract: A front end of the line (FEOL) stripping and cleaning composition for cleaning unashed ion-implanted photoresist from a wafer substrate comprises: a) at least one organic stripping solvent, b) fluoride ions from at least one of ammonium fluoride, ammonium bifluoride or hydrogen fluoride, c) at least one acidifying agent selected from inorganic or organic acids, and d) water, with an oxidizing agent optionally also being present in the composition.
    Type: Application
    Filed: March 13, 2006
    Publication date: July 17, 2008
    Inventors: Sean Michael Kane, Steven A. Lippy