Abstract: A controller of a chemical mechanical polishing system is configured to cause a carrier head to sweep across a polishing pad in accord with a sweep profile. The controller is also configured to select values for a plurality of control parameters to minimize a difference between a target removal profile and an expected removal profile. The plurality of control parameters include a plurality of dwell time parameters. A relationship between the plurality of control parameters and a removal rate is stored in a data structure representing a first matrix which includes a plurality of columns including a column for each dwell time parameter and a row for each position on the substrate represented in the expected removal profile, and the controller is configured to, as part of selection of the values, calculate the expected removal profile by multiplying the first matrix by a second matrix representing control parameter values.

Abstract: A chemical mechanical polishing apparatus has a platen to support a polishing pad, a carrier head comprising a rigid housing and configured to hold a surface of a substrate against the polishing pad, a motor to generate relative motion between the platen and the carrier head so as to polish the substrate, an in-situ carrier head monitoring system including a sensor positioned to interact with the housing and to detect vibrational motion of the housing and generate signals based on the detected vibrational motion, and a controller. The controller is configured to generate a value for a carrier head status parameter based on received signals from the in-situ carrier head monitoring system, and change a polishing parameter or generate an alert based on the carrier head status parameter.

Abstract: A two part retaining ring is described. A rigid upper portion has an annular recess along its inner diameter. An annular wearable lower portion has an inner diameter, an annular extension defined by the inner diameter and a vertical wall that is perpendicular to a surface of the second portion and opposite to the inner diameter. The annular extension fits into the annular recess of the annular first portion. A bonding material is on the vertical wall of the annular second portion.

Abstract: A carrier head for chemical mechanical polishing includes a base assembly and a membrane assembly connected to the base assembly. The membrane assembly includes a membrane support, an inner membrane secured to the membrane support, wherein the inner membrane forms a plurality of individually pressurizable inner chambers between an upper surface of the membrane and the membrane support, and an outer membrane secured to the membrane support and extending below the inner membrane, the outer membrane having an inner surface and an outer surface, wherein the outer membrane defines a lower pressurizable chamber between the inner surface of the outer membrane and a lower surface of the inner membrane, wherein the inner surface is positioned for contact by a lower surface of the inner membrane upon pressurization of one or more of the plurality of chambers, and wherein the outer surface is configured to contact a substrate.

Abstract: A polishing system includes a platen having a top surface to support a main polishing pad. The platen is rotatable about an axis of rotation that passes through approximately the center of the platen. An annular flange projects radially outward from the platen to support an outer polishing pad. The annular flange has an inner edge secured to and rotatable with the platen and vertically fixed relative to the top surface of the platen. The annular flange is vertically deflectable such that an outer edge of the annular flange is vertically moveable relative to the inner edge. An actuator applies pressure to an underside of the annular flange in an angularly limited region, and a carrier head holds a substrate in contact with the polishing pad and is movable to selectively position a portion of the substrate over the outer polishing pad.

Abstract: Embodiments described herein generally relate to equipment used in the manufacturing of electronic devices, and more particularly, to a cleaning system, cleaning system hardware and related methods which may be used to transport and clean the surface of a substrate. According to one embodiment, a blade handling assembly for handling a substrate in a cleaning system includes a gripping assembly including a pair of gripping blades, the blades operable with a gripping actuator to hold a substrate at its edges. The assembly includes a first blade actuator for moving the gripping assembly and substrate between a horizontal and a vertical orientation utilizing a first axis. The assembly includes a second blade actuator for moving the vertically oriented gripping assembly and substrate 180 degrees utilizing a second axis, thereby causing the substrate to face an opposite direction.

Abstract: Embodiments described herein generally relate to equipment used in the manufacturing of electronic devices, and more particularly, to a cleaning system, cleaning system hardware and related methods which may be used to transport and clean the surface of a substrate. According to one embodiment, a substrate cleaning unit may include a pre-clean chamber that performs a pre-clean process on a substrate with the substrate in a horizontal orientation. The unit may also include a first cleaning chamber that performs a first cleaning process on the substrate with the substrate in a vertical orientation. The unit may also include a second cleaning chamber. The unit may also include an integrated cleaning and drying chamber that performs a cleaning and drying process on the substrate in the horizontal orientation. A substrate handler may transfer the substrate between the chambers. The first and second cleaning chambers may be positioned below the pre-clean chamber.

Abstract: A carrier head includes a housing, a support assembly having a support plate flexibly connected to the housing so as to be vertically movable, a plurality of fluid-impermeable barriers projecting from a bottom of the support plate to define a plurality of recesses that are open at bottom sides thereof, and pneumatic control lines. A volume between the support plate and the housing includes one or more independently pressurizable first chambers to apply pressure on a top surface of the support plate in one or more first zones. The barriers are positioned and configured such that when a planar substrate is loaded into the carrier head the barriers contact the substrate and divide a volume between the support plate and the substrate into a plurality of second chambers. The pneumatic control lines are coupled to the plurality of recesses to provide a plurality of independently pressurizable second zones.

Abstract: A retaining ring for a carrier head of a chemical mechanical polishing system includes an annular outer portion having an annular outer surface and a plurality of flanges projecting radially inward from the annular outer portion. Adjacent flanges are separated by a gap and inner ends of the plurality of flanges provide an inner surface to contact a substrate held in the carrier head. The plurality of flanges are canted relative to radial direction.

Abstract: The present disclosure is directed towards polishing modules for performing chemical mechanical polishing of a substrate. The substrate may be a semiconductor substrate. The polishing modules described have a plurality of pads, such as polishing pads, disposed within a single polishing station. The pads are configured to remain stationary during processing, such as during polishing or buff operations. Either an x-y gantry assembly or a head actuation assembly is coupled to a system body of a polishing module and is configured to move a carrier head over the pads. Between process operations the polishing pads may be indexed to expose a new polishing pad to the carrier head.

Abstract: A polishing system includes a platen having a top surface to support a main polishing pad. The platen is rotatable about an axis of rotation that passes through approximately the center of the platen. An annular flange projects radially outward from the platen to support an outer polishing pad. The annular flange has an inner edge secured to and rotatable with the platen and vertically fixed relative to the top surface of the platen. The annular flange is vertically deflectable such that an outer edge of the annular flange is vertically moveable relative to the inner edge. An actuator applies pressure to an underside of the annular flange in an angularly limited region, and a carrier head holds a substrate in contact with the polishing pad and is movable to selectively position a portion of the substrate over the outer polishing pad.

Abstract: An apparatus for chemical mechanical polishing (CMP) of a substrate is described herein. The apparatus includes an extension disposed between a retaining ring and a chucking membrane. The extension is disposed radially outward from the edge of the substrate and is configured to contact the retaining ring during substrate processing. The extension provides a repeatable and controlled point of contact between the retaining ring and the chucking membrane. The extension may have multiple configurations, such that the contact point between the retaining ring and the chucking membrane is set at a pre-determined location or such that the contact point is moveable by an adjustable stop.

Abstract: Embodiments of the present disclosure provide a multiple disk pad conditioner and methods of using the multiple disk pad conditioner during a chemical mechanical polishing (CMP) process. The multiple disk pad conditioner has a plurality of conditioning heads having conditioning disks affixed thereto. The multiple disk pad conditioner can include a conditioning arm, and a plurality of conditioning heads attached to the conditioning arm. Each of the plurality of conditioning heads has a conditioning disk affixed thereto. In some embodiments, each of the conditioning heads include a rotational axis, wherein each of the rotational axes is disposed a distance apart in a first direction that extends along the length of the conditioning arm.

Abstract: A carrier head for chemical mechanical polishing includes a base assembly and a membrane assembly connected to the base assembly. The membrane assembly includes a membrane support, an inner membrane secured to the membrane support, wherein the inner membrane forms a plurality of individually pressurizable inner chambers between an upper surface of the membrane and the membrane support, and an outer membrane secured to the membrane support and extending below the inner membrane, the outer membrane having an inner surface and an outer surface, wherein the outer membrane defines a lower pressurizable chamber between the inner surface of the outer membrane and a lower surface of the inner membrane, wherein the inner surface is positioned for contact by a lower surface of the inner membrane upon pressurization of one or more of the plurality of chambers, and wherein the outer surface is configured to contact a substrate.

Abstract: A polishing system includes a platen having a top surface to support a main polishing pad. The platen is rotatable about an axis of rotation that passes through approximately the center of the platen. An annular flange projects radially outward from the platen to support an outer polishing pad. The annular flange has an inner edge secured to and rotatable with the platen and vertically fixed relative to the top surface of the platen. The annular flange is vertically deflectable such that an outer edge of the annular flange is vertically moveable relative to the inner edge. An actuator applies pressure to an underside of the annular flange in an angularly limited region, and a carrier head holds a substrate in contact with the polishing pad and is movable to selectively position a portion of the substrate over the outer polishing pad.

Abstract: A membrane for a CMP carrier head includes a circular lower portion that provides a substrate mounting surface for a central region of a substrate, a first plurality of flaps that extend upward from the circular lower portion to form a plurality of inner chambers, an annular upper portion that provides a lower surface for applying pressure to an annular outer region of the substrate, and a second plurality of flaps that extend upward from the annular upper portion to form a plurality of independently pressurizable outer chambers. The annular upper portion surrounds the circular lower portion and is vertically offset from the circular lower portion such that the lower surface is positioned above a plane defined by the circular lower portion, and the annular upper portion is coupled to an outermost flap of the first plurality of flaps.

Abstract: A chemical mechanical polishing apparatus includes a platen to support a polishing pad, an actuator, a carrier head to hold a surface of a substrate against the polishing pad, a motor to generate relative motion between the platen and the carrier head so as to polish an overlying layer on the substrate. The platen has a central section with an upper surface and an annular flexure surrounding or surrounded by the central section and having a top surface with a first edge adjacent to and coplanar with the upper surface and a second edge farther from the central section. The actuator is arranged to bend the annular flexure along an entire circumference of the annular flexure so as to modify a vertical position of the second edge of the annular flexure relative to the central section.

Abstract: A retaining ring can be shaped by machining or lapping the bottom surface of the ring to form a shaped profile in the bottom surface. The bottom surface of the retaining ring can include flat, sloped and curved portions. The lapping can be performed using a machine that dedicated for use in lapping the bottom surface of retaining rings. During the lapping the ring can be permitted to rotate freely about an axis of the ring. The bottom surface of the retaining ring can have curved or flat portions.

Abstract: A carrier head for a polishing system includes a housing, a flexible membrane, a first plurality of pressure supply lines, a second plurality of pressure supply lines, and a valve assembly. The flexible membrane defines a multiplicity of independently pressurizable chambers. The valve assembly has a multiplicity of valves with each respective valve of the multiplicity of valves coupled to a respective pressure chamber from the multiplicity of independently pressurizable chambers. Each respective valve is configured to selectively couple the respective pressure chamber to one pressure supply line from a pair of pressure supply lines that include a pressure supply line from the first plurality of pressure supply lines and a pressure supply line from the second plurality of pressure supply lines.

Abstract: A polishing system including a platen to support a polishing pad, a carrier head to hold a substrate against the polishing pad, a source of dry ice particles, and a pad conditioner. The pad conditioner includes a compressor to generate a compressed gas stream, a mixer coupled to the source and the compressor to mix the dry ice particles with the compressed gas stream to form a stream of compressed gas with entrained dry ice particles, and a nozzle coupled to the mixer to direct the stream of compressed gas with entrained dry ice particles onto a polishing surface of the polishing pad at sufficient velocity to condition the polishing pad.