Patents by Inventor Steven R. Soss
Steven R. Soss has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8940634Abstract: A method of forming overlapping contacts in a semiconductor device includes forming a first contact in a dielectric layer; etching the dielectric layer to form a recess adjacent to the first contact and removing a top portion of the first contact while etching the dielectric layer, wherein a bottom portion of the first contact remains in the dielectric layer after the recess is formed in the dielectric layer; and forming a second contact in the recess adjacent to the bottom portion of the first contact and on top of a top surface of the bottom portion of the first contact.Type: GrantFiled: June 29, 2011Date of Patent: January 27, 2015Assignees: International Business Machines Corporation, GLOBALFOUNDRIES, Inc., STMicroelectronics, Inc.Inventors: Brett H. Engel, Lindsey Hall, David F. Hilscher, Randolph F. Knarr, Steven R. Soss, Jin Z. Wallner
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Patent number: 8853045Abstract: A precision low capacitance resistor is formed, e.g., in a bulk substrate. An embodiment includes forming a source/drain region on a substrate, patterning a portion of the source/drain region to form segments, etching the segments to substantially separate an upper section of each segment from a lower section of each segment, and filling the space between the segments with an insulating material. The resulting structure maintains electrical connection between the segments at end pads, but separates the resistor segments from the bottom substrate, thereby avoiding capacitive coupling with the substrate.Type: GrantFiled: October 26, 2011Date of Patent: October 7, 2014Assignee: GlobalFoundries, Inc.Inventor: Steven R. Soss
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Publication number: 20140203405Abstract: A precision resistor is formed with a controllable resistance to compensate for variations that occur with temperature. An embodiment includes forming a resistive semiconductive element having a width and a length on a substrate, patterning an electrically conductive line across the width of the resistive semiconductive element, but electrically isolated therefrom, and forming a depletion channel in the resistive semiconductive element under the electrically conductive line to control the resistance value of the resistive semiconductive element. The design enables dynamic adjustment of the resistance, thereby improving the reliability of the resistor or allowing for resistance modification during final packaging.Type: ApplicationFiled: March 20, 2014Publication date: July 24, 2014Applicant: GLOBALFOUNDRIES Inc.Inventors: Steven R. SOSS, Andreas KNORR
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Patent number: 8709882Abstract: A precision resistor is formed with a controllable resistance to compensate for variations that occur with temperature. An embodiment includes forming a resistive semiconductive element having a width and a length on a substrate, patterning an electrically conductive line across the width of the resistive semiconductive element, but electrically isolated therefrom, and forming a depletion channel in the resistive semiconductive element under the electrically conductive line to control the resistance value of the resistive semiconductive element. The design enables dynamic adjustment of the resistance, thereby improving the reliability of the resistor or allowing for resistance modification during final packaging.Type: GrantFiled: January 7, 2010Date of Patent: April 29, 2014Assignee: GlobalFoundries Inc.Inventors: Steven R. Soss, Andreas Knorr
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Publication number: 20130241070Abstract: A semiconductor device with overlapping contacts is provided. In one aspect, the semiconductor device includes a dielectric layer; a first contact located in the dielectric layer; and a second contact located in the dielectric layer adjacent to the first contact, wherein a portion of the second contact overlaps a top surface of the first contact.Type: ApplicationFiled: May 2, 2013Publication date: September 19, 2013Applicants: International Business Machines Corporation, STMicroelectronics, Inc., Globalfoundaries Inc.Inventors: Brett H. Engel, Lindsey Hall, David F. Hilscher, Randolph F. Knarr, Steven R. Soss, Jin Z. Wallner
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Publication number: 20130001786Abstract: A method of forming overlapping contacts in a semiconductor device includes forming a first contact in a dielectric layer; etching the dielectric layer to form a recess adjacent to the first contact and removing a top portion of the first contact while etching the dielectric layer, wherein a bottom portion of the first contact remains in the dielectric layer after the recess is formed in the dielectric layer; and forming a second contact in the recess adjacent to the bottom portion of the first contact and on top of a top surface of the bottom portion of the first contact.Type: ApplicationFiled: June 29, 2011Publication date: January 3, 2013Applicants: INTERNATIONAL BUSINESS MACHINES CORPORATION, STMICROELECTRONICS, INC., GLOBALFOUNDRIES INC.Inventors: Brett H. Engel, Lindsey Hall, David F. Hilscher, Randolph F. Knarr, Steven R. Soss, Jin Z. Wallner
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Publication number: 20120068234Abstract: Semiconductor devices with replacement gate electrodes and integrated self aligned contacts are formed with enhanced gate dielectric layers and improved electrical isolation properties between the gate line and a contact. Embodiments include forming a removable gate electrode on a substrate, forming a self aligned contact stop layer over the electrode and the substrate, removing a portion of the self aligned contact stop layer over the electrode and the electrode itself leaving an opening, forming a replacement gate electrode of metal, in the opening, transforming an upper portion of the metal into a dielectric layer, and forming a self aligned contact. Embodiments include forming the contact stop layer of a dielectric material, and transforming the upper portion of the metal into a dielectric layer. Embodiments also include forming a hardmask layer over the removable gate electrode to protect the electrode during silicidation in source/drain regions of the semiconductor device.Type: ApplicationFiled: September 22, 2011Publication date: March 22, 2012Applicant: GLOBALFOUNDRIES Inc.Inventors: Steven R. Soss, Andreas Knorr
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Publication number: 20120038026Abstract: A precision low capacitance resistor is formed, e.g., in a bulk substrate. An embodiment includes forming a source/drain region on a substrate, patterning a portion of the source/drain region to form segments, etching the segments to substantially separate an upper section of each segment from a lower section of each segment, and filling the space between the segments with an insulating material. The resulting structure maintains electrical connection between the segments at end pads, but separates the resistor segments from the bottom substrate, thereby avoiding capacitive coupling with the substrate.Type: ApplicationFiled: October 26, 2011Publication date: February 16, 2012Applicant: GLOBALFOUNDRIES Inc.Inventor: Steven R. Soss
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Patent number: 8071457Abstract: A precision low capacitance resistor is formed, e.g., in a bulk substrate. An embodiment includes forming a source/drain region on a substrate, patterning a portion of the source/drain region to form segments, etching the segments to substantially separate an upper section of each segment from a lower section of each segment, and filling the space between the segments with an insulating material. The resulting structure maintains electrical connection between the segments at end pads, but separates the resistor segments from the bottom substrate, thereby avoiding capacitive coupling with the substrate.Type: GrantFiled: January 7, 2010Date of Patent: December 6, 2011Assignee: GLOBALFOUNDRIES Inc.Inventor: Steven R. Soss
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Patent number: 8048790Abstract: Semiconductor devices with replacement gate electrodes and integrated self aligned contacts are formed with enhanced gate dielectric layers and improved electrical isolation properties between the gate line and a contact. Embodiments include forming a removable gate electrode on a substrate, forming a self aligned contact stop layer over the removable gate electrode and the substrate, removing a portion of the self aligned contact stop layer over the removable gate electrode and the electrode itself leaving an opening, forming a replacement gate electrode of metal, in the opening, transforming an upper portion of the metal into a dielectric layer, and forming a self aligned contact. Embodiments include forming the contact stop layer of a dielectric material, e.g., a hafnium oxide, an aluminum oxide, or a silicon carbide and transforming the upper portion of the metal into a dielectric layer by oxidation, fluorination, or nitridation.Type: GrantFiled: September 17, 2009Date of Patent: November 1, 2011Assignee: GLOBALFOUNDRIES Inc.Inventors: Steven R. Soss, Andreas Knorr
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Publication number: 20110163417Abstract: A precision resistor is formed with a controllable resistance to compensate for variations that occur with temperature. An embodiment includes forming a resistive semiconductive element having a width and a length on a substrate, patterning an electrically conductive line across the width of the resistive semiconductive element, but electrically isolated therefrom, and forming a depletion channel in the resistive semiconductive element under the electrically conductive line to control the resistance value of the resistive semiconductive element. The design enables dynamic adjustment of the resistance, thereby improving the reliability of the resistor or allowing for resistance modification during final packaging.Type: ApplicationFiled: January 7, 2010Publication date: July 7, 2011Applicant: GLOBALFOUNDRIES Inc.Inventors: Steven R. Soss, Andreas Knorr
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Publication number: 20110163389Abstract: A precision low capacitance resistor is formed, e.g., in a bulk substrate. An embodiment includes forming a source/drain region on a substrate, patterning a portion of the source/drain region to form segments, etching the segments to substantially separate an upper section of each segment from a lower section of each segment, and filling the space between the segments with an insulating material. The resulting structure maintains electrical connection between the segments at end pads, but separates the resistor segments from the bottom substrate, thereby avoiding capacitive coupling with the substrate.Type: ApplicationFiled: January 7, 2010Publication date: July 7, 2011Applicant: GLOBALFOUNDRIES Inc.Inventor: Steven R. Soss
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Publication number: 20110062501Abstract: Semiconductor devices with replacement gate electrodes and integrated self aligned contacts are formed with enhanced gate dielectric layers and improved electrical isolation properties between the gate line and a contact. Embodiments include forming a removable gate electrode on a substrate, forming a self aligned contact stop layer over the removable gate electrode and the substrate, removing a portion of the self aligned contact stop layer over the removable gate electrode and the electrode itself leaving an opening, forming a replacement gate electrode of metal, in the opening, transforming an upper portion of the metal into a dielectric layer, and forming a self aligned contact. Embodiments include forming the contact stop layer of a dielectric material, e.g., a hafnium oxide, an aluminum oxide, or a silicon carbide and transforming the upper portion of the metal into a dielectric layer by oxidation, fluorination, or nitridation.Type: ApplicationFiled: September 17, 2009Publication date: March 17, 2011Applicant: GLOBALFOUNDRIES Inc.Inventors: Steven R. Soss, Andreas Knorr
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Patent number: 7183162Abstract: A method of forming a microelectronic non-volatile memory cell, a memory cell formed according to the method, and a system including the memory cell.Type: GrantFiled: November 21, 2005Date of Patent: February 27, 2007Assignee: Intel CorporationInventors: Steven R. Soss, Krishna Parat
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Patent number: 5956604Abstract: A partially ionized beam (PIB) deposition technique is used to heteroepitally deposit a thin film of CoGe.sub.2 (001) on GaAs (100) substrates 14. The resulting epitaxial arrangement is CoGe.sub.2 (001) GaAs (100). The best epitaxial layer is obtained with an ion energy 1100 eV to 1200 eV and with a substrate temperature of approximately 280.degree. Centigrade. The substrate wafers are treated only by immersion in HF:H.sub.2 O 1:10 immediately prior to deposition of the epitaxial layer. Contacts grown at these optimal conditions display ohmic behavior, while contacts grown at higher or lower substrate temperatures exhibit rectifying behavior. Epitaxial formation of a high melting point, low resistivity cobalt germanide phase results in the formation of a stable contact to n-GaAs.Type: GrantFiled: July 8, 1997Date of Patent: September 21, 1999Assignee: The United States of America as represented by the Secretary of the ArmyInventors: Sabrina L. Lee, Kevin E. Mello, Steven R. Soss, Toh-Ming Lu, Shyam P. Murarka