Abstract: Provided are compounds, including compositions comprising the same, which function to recruit various target proteins (e.g., client proteins of 14-3-3 proteins) to an E3 ubiquitin ligase enzyme for ubiquitination and subsequent degradation, and methods of using the same.

Abstract: Inhibitors of Glycerol 3-Phosphate Acyltransferase (GPAT) are provided; and methods of use in the treatment of cancer; and treatment of conditions relating to metabolic syndrome and hyperlipidemia.

Abstract: Various implementations include an actuator. The actuator includes a housing and a piston. The housing has a central axis and an inner surface. The housing defines at least one protrusion that extends radially inwardly from the inner surface of the housing. The piston is slidingly disposed within the housing and engages the inner surface of the housing as the piston travels a stroke length within the housing along the central axis. The piston travels from a proximal end to a distal end of the stroke length upon actuation of the actuator. The protrusion is disposed adjacent a distal end of the stroke length and is deformed in a radially outward direction when the piston engages the protrusion.

Abstract: Inhibitors of Glycerol 3-Phosphate Acyltransferase (GPAT) are provided; and methods of use in the treatment of cancer; and treatment of conditions relating to metabolic syndrome and hyperlipidemia.

Abstract: In one aspect this invention relates generally to compounds of Formula: and sub-formulas thereof, or a tautomer of each thereof, a pharmaceutically acceptable salt of each thereof, or a pharmaceutically acceptable solvate of each of the foregoing, where X1, L1, L3, and R3 are described herein.

Abstract: In one aspect this invention relates generally to compounds of Formula: and sub-formulas thereof, or a tautomer of each thereof, a pharmaceutically acceptable salt of each thereof, or a pharmaceutically acceptable solvate of each of the foregoing, where X1, L1, L3, and R3 are described herein.

Abstract: A safety restraint system having a seat belt (51) and an inflatable air bag (200), the air bag including first (220) and second (222) opposing panels, the first panel including one or more loops (234) and slots (232) to receive a seat belt (51), the air bag and/or seat belt configured to slide relatively to each other along the length of the seat belt.

Abstract: A d. c. charged particle accelerator comprises accelerator electrodes separated by insulating spacers defining acceleration gaps between adjacent pairs of electrodes. Individually regulated gap voltages are applied across each adjacent pair of accelerator electrodes. In an embodiment, direct connections are provided to gap electrodes from the stage points of a multistage Cockcroft Walton type voltage multiplier circuit. The described embodiment enables an ion beam to be accelerated to high energies and high beam currents, with good accelerator stability.

Abstract: A safety restraint system having a seat belt (51) and an inflatable air bag (200), the air bag including first (220) and second (222) opposing panels, the first panel including one or more loops (234) and slots (232) to receive a seat belt (51), the air bag and/or seat belt configured to slide relatively to each other along the length of the seat belt.

Abstract: A voltage supply incorporates two voltage supplies connected in a mirror-image series arrangement to generate a DC voltage between the respective common terminals of the voltage supplies.

Abstract: A sequence of series-connected transformers for transmitting power to high voltages incorporates an applied voltage distribution to maintain each transformer in the sequence below its withstanding voltage.

Abstract: A d. c. charged particle accelerator comprises accelerator electrodes separated by insulating spacers defining acceleration gaps between adjacent pairs of electrodes. Individually regulated gap voltages are applied across each adjacent pair of accelerator electrodes. In an embodiment, direct connections are provided to gap electrodes from the stage points of a multistage Cockcroft Walton type voltage multiplier circuit. The described embodiment enables an ion beam to be accelerated to high energies and high beam currents, with good accelerator stability.

Abstract: Embodiments of the present invention provide for a system for accelerating hydrogen ions. A hydrogen generator holding a supply of water is configured to generate a flow of hydrogen gas from the supply of water. An ion source structure is configured to generate a plurality of hydrogen ions from the flow of hydrogen gas. An accelerator tube is configured to accelerate the plurality of hydrogen ions. The supply of water has an isotopic ratio of deuterium that is smaller than the isotopic ratio of deuterium in Vienna Standard Mean Ocean Water.

Abstract: A voltage supply incorporates two voltage supplies connected in a mirror-image series arrangement to generate a DC voltage between the respective common terminals of the voltage supplies.

Abstract: In one aspect, an ion beam profiler for use in an ion implanter is disclosed that includes a Faraday cup disposed in an end-station of the ion implanter in a path of an ion beam traveling from a source to the end-station. The Faraday cup comprises an aperture that is adapted to allow passage of a cross-sectional slices of the beam. An array of ion detectors is disposed behind the Faraday cup in substantial register with the aperture so as to receive different slices of the beam as the beam is scanned across the aperture. The bean profiler further comprises an analyzer that is coupled to the detector array for analyzing detector signals generated in response to ion impingement so as to compute a two-dimensional cross-sectional profile of the beam.

Abstract: A cartridge arrangement comprises a frangible portion and a guide tube. The frangible portion being substantially housed within the guide tube with an end of the frangible portion being sealed by a clip. A cap attaches to an end of the guide tube by a screw thread. Unscrewing of the cap urges arms, having a portion seated behind the clip, away from the guide tube thereby opening the frangible portion.

Abstract: Wafer-holding structures formed from thermosetting resins are disclosed for use in semiconductor processing including, for example, SIMOX wafer processing. At least a portion of the distal portion of the holder comprises graphite, thereby reducing wafer rotation during implantation while maintaining the desired overall thermal signature provided by the thermosetting resin. In one embodiment a pin is disclosed that is adapted to receive a wafer edge, and is coupled with a wafer holder assembly. The pin can be filled with a conductive material to provide an electrical pathway between the wafer and the wafer holder assembly, which can be coupled to a ground. This arrangement provides a conductive path for inhibiting electrical discharges from the wafer during the ion implantation process. The pin exhibits thermal isolation characteristics and sufficient hardness so as to not effect localized thermal dissipation of the wafer, yet is sufficiently soft so as to not mark or otherwise damage the wafer.

Abstract: This invention relates to novel compounds that are liver selective glucocorticoid receptor antagonists, to methods of preparing such compounds, and to methods for using such compounds in the regulation of metabolism, especially lowering serum glucose levels, insulin levels, or lipid levels, and/or decreasing body weight.

Abstract: In one aspect, the present invention provides a method of managing fluctuations in power supplied to a semiconductor processing apparatus that includes monitoring the power supplied to the apparatus to detect the occurrence of a power fluctuation event during a semiconductor processing session. Upon detection of a power fluctuation event, the semiconductor processing can be interrupted. After the end of the power fluctuation event, at least one operational parameter of the apparatus, e.g., vacuum level in an evacuated processing chamber, can be measured, and the semiconductor processing can be resumed when the measured operational parameter is within an acceptable range. The measured operational parameter can preferably include a parameter that recovers more slowly than others when adversely affected by a power fluctuation event.

Abstract: In one aspect, the present invention provides a method of managing fluctuations in power supplied to a semiconductor processing apparatus that includes monitoring the power supplied to the apparatus to detect the occurrence of a power fluctuation event during a semiconductor processing session. Upon detection of a power fluctuation event, the semiconductor processing can be interrupted. After the end of the power fluctuation event, at least one operational parameter of the apparatus, e.g., vacuum level in an evacuated processing chamber, can be measured, and the semiconductor processing can be resumed when the measured operational parameter is within an acceptable range. The measured operational parameter can preferably include a parameter that recovers more slowly than others when adversely affected by a power fluctuation event.