Abstract: The present invention is a non-invasive method for reducing fat in a patient by administering a therapeutically effective amount of niacin and applying laser energy to targeted external regions of a patient's body.

Abstract: A semiconductor structure. The structure includes (a) a semiconductor substrate; (b) a hard mask layer on top of the semiconductor substrate; and (c) a hard mask layer opening in the hard mask layer. The semiconductor substrate is exposed to the atmosphere through the hard mask layer opening. The hard mask layer opening comprises a top portion and a bottom portion, wherein the bottom portion is disposed between the top portion and the semiconductor substrate. The bottom portion has a greater lateral width than the top portion.

Abstract: An improved hand-held laser device that automatically changes the pulse frequency while the laser beam is being generated. The device comprises one or more laser energy sources and a frequency controller to change the pulse frequency of the emitted laser light. In certain embodiments, the frequency change is predictable and can be defined by a formula. In other embodiments, the frequency change is unpredictable and is determined using a pseudo-random number generator algorithm.

Abstract: This invention is a scanning laser device with a universal carriage that holds any type of optical element. The carriage rotates about an axis that is substantially co-axial to the incident laser beam, thereby causing the laser energy passing through the optical element to sweep through a 360° circle. The preferred embodiment uses a rod lens as the optical element, resulting in a large circular beam spot. The device may utilize laser sources of various wavelengths and pulse frequencies, and multiple devices may be combined to scan an even larger area.

Abstract: A method of using a hand-held laser device that can simultaneously provide two or more types of low level laser therapy treatments to two or more areas of a patient's body simultaneously. The device enables laser light of different pulse repetition rates, different beam shapes and spot sizes to be applied to a patient's body. The device includes two or more laser sources. In the preferred embodiment, two semiconductor diode laser sources simultaneously provide two separate laser beams from separate probes, one laser beam producing laser light at a first pulse repetition rate and the other producing laser light at a second pulse repetition rate.

Abstract: A stand-alone laser device that provides low level laser therapy using one or more laser sources. The laser sources are attached to one or more arms which can be positioned to cause the laser light to impinge on a desired area of a patient's body. A scanning apparatus is attached to the arms which comprise structures that cooperate to cause an optical element to be able to simultaneously rotate about a central axis and move in a linear motion along that axis to achieve any desired scan pattern. Laser light of different pulse widths, different beam shapes and different scan patterns can be applied externally to a patient's body.

Abstract: A system for charging and programming one or more hand-held lasers. Each hand-held laser probe contains a rechargeable battery and means for storing program instructions. A base station transmits program instructions to the probe while the probe rests in the base or over the air by using radio or infrared frequencies. The probe may also be programmed by a portable memory unit. The base station is preferably connected to the internet, a telephone network, or computer. In the preferred embodiment, the probe fits into a cavity on the base station and the base station charges the batteries while the laser rests in cavity. The base is connected to house current.

Abstract: A trench capacitor structure in which arsenic contamination is substantially reduced and/or essentially eliminated from diffusing into a semiconductor substrate along sidewalls of a trench opening having a high aspect ratio is provided. The present invention also provides a method of fabricating such a trench capacitor structure as well as a method for detecting the arsenic contamination during the drive-in annealing step. The detection of arsenic for product running through the manufacturing lines uses the effect of arsenic enhanced oxidation. That is, the high temperature oxidation anneal used to drive arsenic into the semiconductor substrate is monitored for thickness. For large levels of arsenic outdiffusion, the oxidation rate will increase resulting in a thicker oxide layer. If such an event is detected, the product that has been through the process steps to form the buried plate up to the drive-in anneal, can be reworked to reduce arsenic contamination.

Abstract: A method for etching a deep trench in a semiconductor substrate. The method comprises the steps of (a) forming a hard mask layer on top of the semiconductor substrate, (b) etching a hard mask opening in the hard mask layer so as to expose the semiconductor substrate to the atmosphere through the hard mask layer opening, wherein the step of etching the hard mask opening includes the step of etching a bottom portion of the hard mask opening such that a side wall of the bottom portion of the hard mask opening is substantially vertical, and (c) etching a deep trench in the substrate via the hard mask opening.

Abstract: A structure and fabrication method for a gate stack used to define source/drain regions in a semiconductor substrate. The method comprises (a) forming a gate dielectric layer on top of the substrate, (b) forming a gate polysilicon layer on top of the gate dielectric layer, (c) implanting n-type dopants in a top layer of the gate polysilicon layer, (d) etching away portions of the gate polysilicon layer and the gate dielectric layer so as to form a gate stack on the substrate, and (e) thermally oxidizing side walls of the gate stack with the presence of a nitrogen-carrying gas. As a result, a diffusion barrier layer is formed at the same depth in the polysilicon material of the gate stack regardless of the doping concentration. Therefore, the n-type doped region of the gate stack has the same width as that of the undoped region of the gate stack.

Abstract: A method of forming a structure, an array of structures and a memory cell, the method of fabricating a structure, including: (a) forming a trench in a substrate; (b) depositing a first layer of polysilicon on a surface of the substrate, the first layer of polysilicon filling the trench; (c) chemical-mechanical-polishing the first layer of polysilicon at a first temperature to expose the surface of the substrate; (d) removing an upper portion of the first polysilicon from the trench; (e) depositing a second layer of polysilicon on the surface of the substrate, the second layer of polysilicon filling the trench; and (f) chemical-mechanical-polishing the second layer of polysilicon at a second temperature to expose the surface of the substrate, the second temperature different from the first temperature.

Abstract: A method and structure for fabricating semiconductor wafers. The method comprises providing a plurality of semiconductor wafers. The plurality of semiconductor wafers comprises a first semiconductor wafer and a second semiconductor wafer. The first semiconductor wafer is located adjacent to the second semiconductor wafer. A relationship is provided between a plurality of values for an electrical characteristic and a plurality of materials. A material is chosen from the plurality of materials existing in the relationship. A substructure is formed comprising the material sandwiched between a topside of the first semiconductor wafer and a backside of a portion of the of the second semiconductor wafer. The plurality of semiconductor wafers are placed into a furnace comprising an elevated temperature for processing resulting in a value for the first semiconductor wafer of the electrical characteristic that corresponds to said material in said relationship.

Abstract: A noninvasive method of reducing fat from targeted regions of a patient's body by applying low-level laser energy externally through the skin of the patient to the targeted areas. Sufficient laser energy is applied to release at least a portion of intracellular fat into the interstitial space. The released intracellular fat is removed from the body through the body's natural functions. The preferred embodiment uses laser energy at about 635 nm.

Abstract: The present invention is a method for promoting faster wound healing and alleviating pain during and after various dermatology-related treatments. The method comprises using low level laser therapy in conjunction with dermatological treatments including intense pulsed light, radio frequency, dermabrasion, microdermabrasion, chemabrasion, chemical peels, ablative lasers, and cryogenics.

Abstract: The present invention is a method for producing an insulin-secreting pre-adipocyte stem cell and the cells derived therefrom. The preferred method comprises obtaining fat cells from a human; treating the fat cells with low-level laser energy; culturing the treated fat cells and suspending them in media together with an insulin gene plasmid; and subjecting the fat cells to transfection. The transfection is facilitated with the application of low-level laser energy.

Abstract: A force-transmitting head for a chiropractic adjustor apparatus includes a hub which is rotatable in a cavity formed in the head and non-rotatably attached to a reciprocating shaft of the apparatus. A rotation pin extends through the body into the cavity and engages a track formed in the hub. Reciprocating movement of the shaft and hub causes a rotational movement of the body with passage of the rotation pin along the track. Also, a chiropractic adjustor apparatus incorporating the force-transmitting head.

Abstract: An improved laser device that can simultaneously provide low level laser therapy treatments to the sympathetic and parasympathetic nervous systems. The device enables laser light of different colors, pulse frequencies, beam shapes and spot sizes to be applied externally to a patient's body. The device includes multiple laser sources. In the preferred embodiment, and hand-held wand emits two separate laser beams, one laser beam producing a pulsed line of red laser light and the other producing a pulsed line of green laser light.

Abstract: A bilayer dielectric structure for substantially reducing or eliminating metal contaminants formed during subsequent polysilicon deposition is provided. The bilayer dielectric structure includes an upper surface region that is rich in chlorine located atop a bottom surface region. The upper surface region that is rich in chlorine removes metal contaminates that are present atop the structure during subsequent formation of a polysilicon layer. A method of forming the bilayer structure is also provided.

Abstract: A method of fabricating a gate dielectric layer, including: providing a substrate; forming a silicon dioxide layer on a top surface of the substrate; performing a plasma nitridation in a reducing atmosphere to convert the silicon dioxide layer into a silicon oxynitride layer. The dielectric layer so formed may be used in the fabrication of MOSFETs.

Abstract: Methods such as Remote Plasma Nitridation (RPN) are used to introduce nitrogen into a gate dielectric layer. However, these methods yield nitrided layers where the layers are not uniform, both in cross-sectional profile and in nitrogen profile. Subjecting the nitrided layer to an additional NO anneal process increases the uniformity of the nitrided layer.