Abstract: A sheet wafer has a generally flat, generally rectangular shaped body with a length and a width, and first and second filaments generally perpendicular to the width of the body. The first and second filaments are at least partially encapsulated by a wafer material and, together with the wafer material, form at least a portion of the body. The width is between about 145 mm and 165 mm.

Abstract: Embodiments of methods for improving electrical leakage performance and minimizing electromigration in semiconductor devices are generally described herein. Other embodiments may be described and claimed.

Abstract: Embodiments of methods for improving electrical leakage performance and minimizing electromigration in semiconductor devices are generally described herein. Other embodiments may be described and claimed.

Abstract: Detecting and/or mitigating the presence of particle contaminants in a MEMS device involves including MEMS structures that in normal operation are robust against the presence of particles but which can be made sensitive to that presence during a test mode prior to use, e.g.

Abstract: Embodiments of methods for improving a copper/dielectric interface in semiconductor devices are generally described herein. Other embodiments may be described and claimed.

Abstract: A method for depositing material on a substrate is described. The method comprises maintaining a reduced-pressure environment around a substrate holder for holding a substrate having a surface, and holding the substrate securely within the reduced-pressure environment. Additionally, the method comprises forming a gas cluster ion beam (GCIB) from a pressurized gas comprising a compound having silicon (Si) and carbon (C), accelerating the GCIB to the reduced-pressure environment, and irradiating the accelerated GCIB onto at least a portion of the surface of the substrate to form a thin film containing silicon and carbon, wherein the carbon content is greater than or equal to about 10%. Further the compound may possess a Si—C bond.

Abstract: Embodiments of methods for improving electrical leakage performance and minimizing electromigration in semiconductor devices are generally described herein. Other embodiments may be described and claimed.

Abstract: Embodiments of methods for improving electrical leakage performance and minimizing electromigration in semiconductor devices are generally described herein. Other embodiments may be described and claimed.

Abstract: Embodiments of methods for improving a copper/dielectric interface in semiconductor devices are generally described herein. Other embodiments may be described and claimed.

Abstract: A wafer processing cluster tool and method of operation provides one or more gas cluster ion beam processing chambers in possible combination with a deposition chamber and/or a cleaning chamber for performing sequential processing steps including, GCIB processing in a reduced pressure atmosphere.

Abstract: Capping layer or layers on a surface of a copper interconnect wiring layer for use in interconnect structures for integrated circuits and methods and apparatus for forming improved integration interconnection structures for integrated circuits by the application of gas-cluster ion-beam processing. Reduced copper diffusion and improved electromigration lifetime result and the use of selective metal capping techniques and their attendant yield problems are avoided. Various cluster tool configurations including gas-cluster ion-beam processing modules for copper capping, cleaning, etching, and film formation steps are disclosed.

Abstract: According to various embodiments and aspects of the present invention, there is provided a dynamically tunable thin film interference coating including one or more layers with thermo-optically tunable refractive index. Tunable layers within thin film interference coatings enable a new family of thin film active devices for the filtering, control, modulation of light. Active thin film structures can be used directly or integrated into a variety of photonic subsystems to make tunable lasers, tunable add-drop filters for fiber optic telecommunications, tunable polarizers, tunable dispersion compensation filters, and many other devices.

Abstract: Capping layer or layers on a surface of a copper interconnect wiring layer for use in interconnect structures for integrated circuits and methods of forming improved integration interconnection structures for integrated circuits by the application of gas-cluster ion-beam processing. Reduced copper diffusion and improved electromigration lifetime result and the use of selective metal capping techniques and their attendant yield problems are avoided.

Abstract: An optical instrument including: a thermo-optically tunable, thin film, free-space interference filter having a tunable passband which functions as a wavelength selector, the filter including a sequence of alternating layers of amorphous silicon and a dielectric material deposited one on top of the other and forming a Fabry-Perot cavity structure having: a first multi-layer thin film interference structure forming a first mirror; a thin-film spacer layer deposited on top of the first multi-layer interference structure, the thin-film spacer layer made of amorphous silicon; and a second multi-layer thin film interference structure deposited on top of the thin-film spacer layer and forming a second mirror; a lens for coupling an optical beam into the filter; an optical detector for receiving the optical beam after the optical beam has interacted with the interference filter; and circuitry for heating the thermo-optically tunable interference filter to control a location of the passband.

Abstract: An optoelectronic device including a header having an upper surface and including a plurality of conducting pins extending up through the upper surface; an optical device; a tunable optical filter, wherein the optical device and the tunable optical filter are arranged in a vertical stack mounted on and extending above the upper surface of the header and wherein the tunable optical filter is electrically connected to the plurality of conducting pins; and a cap affixed to the header and along with the header defining a sealed interior containing the optical device and the tunable optical filter, wherein the cap has a top surface with a window formed therein, and wherein the window is aligned with the tunable optical filter and the optical device.

Abstract: According to various embodiments and aspects of the present invention, there is provided a dynamically tunable thin film interference coating including one or more layers with thermo-optically tunable refractive index. Tunable layers within thin film interference coatings enable a new family of thin film active devices for the filtering, control, modulation of light. Active thin film structures can be used directly or integrated into a variety of photonic subsystems to make tunable lasers, tunable add-drop filters for fiber optic telecommunications, tunable polarizers, tunable dispersion compensation filters, and many other devices.

Abstract: An optoelectronic device including a header having an upper surface and including a plurality of conducting pins extending up through the upper surface; an optical device; a tunable optical filter, wherein the optical device and the tunable optical filter are arranged in a vertical stack mounted on and extending above the upper surface of the header and wherein the tunable optical filter is electrically connected to the plurality of conducting pins; and a cap affixed to the header and along with the header defining a sealed interior containing the optical device and the tunable optical filter, wherein the cap has a top surface with a window formed therein, and wherein the window is aligned with the tunable optical filter and the optical device.

Abstract: According to various embodiments and aspects of the present invention, there is provided a dynamically tunable thin film interference coating including one or more layers with thermo-optically tunable refractive index. Tunable layers within thin film interference coatings enable a new family of thin film active devices for the filtering, control, modulation of light. Active thin film structures can be used directly or integrated into a variety of photonic subsystems to make tunable lasers, tunable add-drop filters for fiber optic telecommunications, tunable polarizers, tunable dispersion compensation filters, and many other devices.

Abstract: An optical instrument may include a tunable free-space filter as a wavelength selector. That optical instrument may be an optical spectrum analyzer (OSA). Indeed, the OSA may be constructed and arranged as an optical channel monitor for wavelength-division multiplexed optical communication systems. The tunable free-space filter may be a tunable thin film filter (TTFF). The TTFF may be thermo-optically tunable. The tunable filter may be a multi-layer film structure incorporating thin film semiconductor materials. The temperature, and hence the wavelength, of the TTFF may be controlled by various heating and cooling structures. Various TTFF structures are also possible. The TTFF may have a single-cavity Fabry-Perot structure or may have a multi-cavity structure. Packaging variants can also be made. Any one or more of several calibration aids can be included, such as an external source of one or more known wavelength signals, or an internal source of one or more known wavelength signals.

Abstract: An improved tool for extracting the base of a broken light bulb from a socket. An integral device has a cylindrical stem portion with an enlarged handle at one end and a tapered conical portion with a flat tip at the other. The tapered conical portion has toothed blade members embedded in slots thereon, with the toothed edges facing outward. Two such blades are longitudinally disposed at diametrically opposed locations of the conical portion, and a shorter blade member is horizontally disposed on the flat tip thereof.