Abstract: A method for electrofilling large, high aspect ratio recessed features with copper without depositing substantial amounts of copper in the field region is provided. The method allows completely filling recessed features having aspect ratios of at least about 5:1 such as at least about 10:1, and widths of at least about 1 ?m in a substantially void-free manner without depositing more than 5% of copper in the field region (relative to the thickness deposited in the recessed feature). The method involves contacting the substrate having one or more large, high aspect ratio recessed features (such as a TSVs) with an electrolyte comprising copper ions and an organic dual state inhibitor (DSI) configured for inhibiting copper deposition in the field region, and electrodepositing copper under potential-controlled conditions, where the potential is controlled not exceed the critical potential of the DSI.

Abstract: The embodiments herein relate to methods and apparatus for electroplating one or more materials onto a substrate. In many cases the material is a metal and the substrate is a semiconductor wafer, though the embodiments are no so limited. Typically, the embodiments herein utilize a channeled plate positioned near the substrate, creating a cross flow manifold defined on the bottom by the channeled plate, on the top by the substrate, and on the sides by a cross flow confinement ring. Also typically present is an edge flow element configured to direct electrolyte into a corner formed between the substrate and substrate holder. During plating, fluid enters the cross flow manifold both upward through the channels in the channeled plate, and laterally through a cross flow side inlet positioned on one side of the cross flow confinement ring. The flow paths combine in the cross flow manifold and exit at the cross flow exit, which is positioned opposite the cross flow inlet.

Abstract: An apparatus for electroplating metal on a substrate while controlling plating uniformity includes in one aspect: a plating chamber having anolyte and catholyte compartments separated by a membrane; a primary anode positioned in the anolyte compartment; an ionically resistive ionically permeable element positioned between the membrane and a substrate in the catholyte compartment; and a secondary electrode configured to donate and/or divert plating current to and/or from the substrate, wherein the secondary electrode is positioned such that the donated and/or diverted plating current does not cross the membrane separating the anolyte and catholyte compartments, but passes through the ionically resistive ionically permeable element. In some embodiments the secondary electrode is an azimuthally symmetrical anode (e.g., a ring positioned in a separate compartment around the periphery of the plating chamber) that can be dynamically controlled during electroplating.

Abstract: The embodiments herein relate to methods and apparatus for electroplating one or more materials onto a substrate. In many cases the material is a metal and the substrate is a semiconductor wafer, though the embodiments are no so limited. Typically, the embodiments herein utilize a channeled plate positioned near the substrate, creating a cross flow manifold defined on the bottom by the channeled plate, on the top by the substrate, and on the sides by a cross flow confinement ring. During plating, fluid enters the cross flow manifold both upward through the channels in the channeled plate, and laterally through a cross flow side inlet positioned on one side of the cross flow confinement ring. The flow paths combine in the cross flow manifold and exit at the cross flow exit, which is positioned opposite the cross flow inlet. These combined flow paths result in improved plating uniformity.

Abstract: Provided are cleaning methods and systems to remove unintended metallic deposits from electroplating apparatuses using reverse current deplating techniques. Such cleaning involves positioning a cleaning (deplating) disk in an electroplating cup similar to a regular processed substrate. The front surface of the cleaning disk includes a corrosion resistant conductive material to form electrical connections to deposits on the cup's surfaces. The disk is sealed in the cup and submerged into a plating solution. A reverse current is then applied to the front conductive surface of the disk to initiate deplating of the deposits. Sealing compression in the cup may change during cleaning to cause different deformation of the lip seal and to form new electrical connections to the deposits. The proposed cleaning may be applied to remove deposits formed during electroplating of alloys, in particular, tin-silver alloys widely used for semiconductor and wafer level packaging.

Abstract: Disclosed are electroplating cups for holding, sealing, and providing electrical power to wafers during electroplating, where the electroplating cup can include a cup bottom, an elastomeric lipseal, and an electrical contact element. The cup bottom can include a radially inwardly protruding surface with a plurality of through-holes. The elastomeric lipseal can directly adhere to the radially inwardly protruding surface of the cup bottom, fill the plurality of through-holes, and encircle an inner edge of the cup bottom. In some implementations, this can mitigate the effects of wafer sticking. In some implementations, the cup bottom may be treated to promote adhesion between the elastomeric lipseal and the radially inwardly protruding surface of the cup bottom.

Abstract: An apparatus for continuous simultaneous electroplating of two metals having substantially different standard electrodeposition potentials (e.g., for deposition of Sn—Ag alloys) comprises an anode chamber for containing an anolyte comprising ions of a first, less noble metal, (e.g., tin), but not of a second, more noble, metal (e.g., silver) and an active anode; a cathode chamber for containing catholyte including ions of a first metal (e.g., tin), ions of a second, more noble, metal (e.g., silver), and the substrate; a separation structure positioned between the anode chamber and the cathode chamber, where the separation structure substantially prevents transfer of more noble metal from catholyte to the anolyte; and fluidic features and an associated controller coupled to the apparatus and configured to perform continuous electroplating, while maintaining substantially constant concentrations of plating bath components for extended periods of use.

Abstract: Described are apparatus and methods for electroplating one or more metals onto a substrate. Embodiments include electroplating apparatus configured for plating highly uniform metal layers. In specific embodiments, the apparatus includes a flow-shaping element made of an ionically resistive material and having a plurality of channels made through the flow shaping element. The channels allow for transport of the electrolyte through the flow shaping element during electroplating. The channel openings are arranged in a spiral-like pattern on the substrate-facing surface of the flow shaping element such that the center of the spiral-like pattern is offset from the center of the flow shaping element.

Abstract: The embodiments herein relate to methods and apparatus for electroplating one or more materials onto a substrate. In many cases the material is a metal and the substrate is a semiconductor wafer, though the embodiments are no so limited. Typically, the embodiments herein utilize a channeled plate positioned near the substrate, creating a cross flow manifold defined on the bottom by the channeled plate, on the top by the substrate, and on the sides by a cross flow confinement ring. During plating, fluid enters the cross flow manifold both upward through the channels in the channeled plate, and laterally through a cross flow side inlet positioned on one side of the cross flow confinement ring. The flow paths combine in the cross flow manifold and exit at the cross flow exit, which is positioned opposite the cross flow inlet. These combined flow paths result in improved plating uniformity.

Abstract: An apparatus for electroplating metal on a semiconductor substrate with improved azimuthal uniformity includes in one aspect: a plating chamber configured to contain an electrolyte and an anode; a substrate holder configured to hold the semiconductor substrate; an ionically resistive ionically permeable element (“the element”) configured to be positioned proximate the substrate; and a shield configured for providing azimuthally asymmetrical shielding and positioned between the substrate holder and the element such that the closest distance between the substrate-facing surface of the shield and the working surface of the substrate is less than 2 mm. In some embodiments there is an electrolyte-filled gap between the substrate-facing surface of the element and the shield during electroplating. The substrate-facing surface of the shield may be contoured such that the distance from different positions of the shield to the substrate is varied.

Abstract: An apparatus for automatically generating a metal-containing electrolyte (e.g., an electrolyte containing Sn2+ ions and an acid) includes an anolyte chamber configured to house an active anode (e.g., a metallic tin anode), an anolyte, and a sensor (e.g., one or more sensors) measuring a concentration of metal ions in the anolyte; a catholyte chamber configured to house a hydrogen-generating cathode and a catholyte; and a controller having program instructions for processing data from the sensor and for automatically generating an electrolyte having metal ions in a target concentration range in the anolyte chamber. In some embodiments, the apparatus is in communication with an electroplating apparatus and is capable to deliver the generated electrolyte to the electroplating apparatus on demand. In some embodiments, a densitometer and a conductivity meter are together used as sensors, and the apparatus is configured to generate low alpha tin electrolyte containing an acid.

Abstract: The embodiments disclosed herein pertain to novel methods and apparatus for removing material from a substrate. In certain embodiments, the method and apparatus are used to remove negative photoresist, though the disclosed techniques may be implemented to remove a variety of materials. In practicing the disclosed embodiments, a stripping solution may be introduced from an inlet to an internal manifold, sometimes referred to as a cross flow manifold. The solution flows laterally through a relatively narrow cavity between the substrate and the base plate. Fluid exits the narrow cavity at an outlet, which is positioned on the other side of the substrate, opposite the inlet and internal manifold. The substrate spins while in contact with the stripping solution to achieve a more uniform flow over the face of the substrate. In some embodiments, the base plate includes protuberances which operate to increase the flow rate (and thereby increase the local Re) near the face of the substrate.

Abstract: An apparatus for electroplating metal on a semiconductor substrate with improved plating uniformity includes in one aspect: a plating chamber configured to contain an electrolyte and an anode; a substrate holder configured to hold the semiconductor substrate; and an ionically resistive ionically permeable element comprising a substantially planar substrate-facing surface and an opposing surface, wherein the element allows for flow of ionic current towards the substrate during electroplating, and wherein the element comprises a region having varied local resistivity. In one example the resistivity of the element is varied by varying the thickness of the element. In some embodiments the thickness of the element is gradually reduced in a radial direction from the edge of the element to the center of the element. The provided apparatus and methods are particularly useful for electroplating metal in WLP recessed features.

Abstract: An apparatus for continuous simultaneous electroplating of two metals having substantially different standard electrodeposition potentials (e.g., for deposition of Sn—Ag alloys) comprises an anode chamber for containing an anolyte comprising ions of a first, less noble metal, (e.g., tin), but not of a second, more noble, metal (e.g., silver) and an active anode; a cathode chamber for containing catholyte including ions of a first metal (e.g., tin), ions of a second, more noble, metal (e.g., silver), and the substrate; a separation structure positioned between the anode chamber and the cathode chamber, where the separation structure substantially prevents transfer of more noble metal from catholyte to the anolyte; and fluidic features and an associated controller coupled to the apparatus and configured to perform continuous electroplating, while maintaining substantially constant concentrations of plating bath components for extended periods of use.

Abstract: Provided are cleaning methods and systems to remove unintended metallic deposits from electroplating apparatuses using reverse current deplating techniques. Such cleaning involves positioning a cleaning (deplating) disk in an electroplating cup similar to a regular processed substrate. The front surface of the cleaning disk includes a corrosion resistant conductive material to form electrical connections to deposits on the cup's surfaces. The disk is sealed in the cup and submerged into a plating solution. A reverse current is then applied to the front conductive surface of the disk to initiate deplating of the deposits. Sealing compression in the cup may change during cleaning to cause different deformation of the lip seal and to form new electrical connections to the deposits. The proposed cleaning may be applied to remove deposits formed during electroplating of alloys, in particular, tin-silver alloys widely used for semiconductor and wafer level packaging.

Abstract: Methods of and apparatuses for monitoring electroplating bath quality in electroplating cells using voltage readings are described herein. Methods involve obtaining real-time voltage readings during an electroplating process and determining whether the voltage readings are within a threshold deviation of an expected voltage reading at a given time.

Abstract: Described are apparatus and methods for electroplating one or more metals onto a substrate. Embodiments include electroplating apparatus configured for plating highly uniform metal layers. In specific embodiments, the apparatus includes a flow-shaping element made of an ionically resistive material and having a plurality of channels made through the flow shaping element. The channels allow for transport of the electrolyte through the flow shaping element during electroplating. The channel openings are arranged in a spiral-like pattern on the substrate-facing surface of the flow shaping element such that the center of the spiral-like pattern is offset from the center of the flow shaping element.

Abstract: Disclosed are pre-wetting apparatus designs and methods. In some embodiments, a pre-wetting apparatus includes a degasser, a process chamber, and a controller. The process chamber includes a wafer holder configured to hold a wafer substrate, a vacuum port configured to allow formation of a subatmospheric pressure in the process chamber, and a fluid inlet coupled to the degasser and configured to deliver a degassed pre-wetting fluid onto the wafer substrate at a velocity of at least about 7 meters per second whereby particles on the wafer substrate are dislodged and at a flow rate whereby dislodged particles are removed from the wafer substrate. The controller includes program instructions for forming a wetting layer on the wafer substrate in the process chamber by contacting the wafer substrate with the degassed pre-wetting fluid admitted through the fluid inlet at a flow rate of at least about 0.4 liters per minute.

Abstract: Disclosed are pre-wetting apparatus designs and methods. In some embodiments, a pre-wetting apparatus includes a degasser, a process chamber, and a controller. The process chamber includes a wafer holder configured to hold a wafer substrate, a vacuum port configured to allow formation of a subatmospheric pressure in the process chamber, and a fluid inlet coupled to the degasser and configured to deliver a degassed pre-wetting fluid onto the wafer substrate at a velocity of at least about 7 meters per second whereby particles on the wafer substrate are dislodged and at a flow rate whereby dislodged particles are removed from the wafer substrate. The controller includes program instructions for forming a wetting layer on the wafer substrate in the process chamber by contacting the wafer substrate with the degassed pre-wetting fluid admitted through the fluid inlet at a flow rate of at least about 0.4 liters per minute.

Abstract: The embodiments disclosed herein pertain to novel methods and apparatus for removing material from a substrate. In certain embodiments, the method and apparatus are used to remove negative photoresist, though the disclosed techniques may be implemented to remove a variety of materials. In practicing the disclosed embodiments, a stripping solution may be introduced from an inlet to an internal manifold, sometimes referred to as a cross flow manifold. The solution flows laterally through a relatively narrow cavity between the substrate and the base plate. Fluid exits the narrow cavity at an outlet, which is positioned on the other side of the substrate, opposite the inlet and internal manifold. The substrate spins while in contact with the stripping solution to achieve a more uniform flow over the face of the substrate. In some embodiments, the base plate includes protuberances which operate to increase the flow rate (and thereby increase the local Re) near the face of the substrate.