Abstract: A method is provided for fabricating a semiconductor structure. The method includes providing a to-be-etched layer; and forming a hard mask layer on the to-be-etched layer. The method also includes forming a photoresist layer on the hard mask layer; and forming a patterned photoresist layer having openings exposing the hard mask layer by exposing and developing the photoresist layer. Further, the method includes forming sidewall spacers on side surfaces of the openings; and forming a patterned hard mask layer by etching the hard mask layer using the patterned photoresist layer and the sidewall spacers as an etching mask such that patterns in the hard mask layer have a substantially right angle at edge. Further, the method also includes forming to-be-etched patterns by etching the to-be-etched layer based on the patterned hard mask layer.

Abstract: Various embodiments provide double patterning methods and structures. In an exemplary method, a to-be-etched layer can be provided. A stress layer can be formed on the to-be-etched layer. The stress layer can have a tensile stress. A plurality of discrete sacrificial layers can be formed on the stress layer. A sidewall-spacer material layer covering the plurality of sacrificial layers and the stress layer can be formed. The sidewall-spacer material layer can be etched to form a sidewall spacer on a sidewall of each sacrificial layer of the plurality of sacrificial layers. The stress layer at each side of the each sacrificial layer can be etched to form a groove passing through a thickness of the stress layer. The plurality of sacrificial layers can be removed.

Abstract: Semiconductor devices and fabrication methods are provided. A fin can be formed on a semiconductor substrate, a gate can be formed across the fin, and sidewall spacers can be formed across the fin on both sides of the gate. A dummy contact can be formed across the fin and on each of the both sides of the sidewall spacers. After forming an interlayer dielectric layer on the semiconductor substrate, the dummy contact can be removed to form a contact trench. The dummy contact is made of a material having an etch selectivity sufficiently higher than the fin such that the removing of the dummy contact generates substantially no damage to the fin. A conductive material can be filled in the contact trench to form a trench metal contact.

Abstract: Various embodiments provide double patterning methods and structures. In an exemplary method, a to-be-etched layer can be provided. A stress layer can be formed on the to-be-etched layer. The stress layer can have a tensile stress. A plurality of discrete sacrificial layers can be formed on the stress layer. A sidewall-spacer material layer covering the plurality of sacrificial layers and the stress layer can be formed. The sidewall-spacer material layer can be etched to form a sidewall spacer on a sidewall of each sacrificial layer of the plurality of sacrificial layers. The stress layer at each side of the each sacrificial layer can be etched to form a groove passing through a thickness of the stress layer. The plurality of sacrificial layers can be removed.

Abstract: Various embodiments provide semiconductor devices and fabrication methods. In an exemplary method, a dielectric layer can be formed on a semiconductor substrate. A plurality of pillar structures having a matrix arrangement can be formed on the dielectric layer. A plurality of sidewall spacers can be formed on the dielectric layer. Each sidewall spacer can be formed on a sidewall surface of one of the plurality of pillar structures. A distance between adjacent pillar structures in a same row or in a same column can be less than or equal to a double of a thickness of the each sidewall spacer on the sidewall surface. The plurality of pillar structures can be removed. The dielectric layer can be etched using the plurality of sidewall spacers as an etch mask to form a plurality of trenches or through holes in the dielectric layer.

Abstract: A method is provided for fabricating a transistor. The method includes providing a semiconductor substrate; and configuring a channel region along a first direction. The method also includes forming trenches at both sides of the channel region along a second direction; and forming a magnetic material layer in each of the trenches. Further, the method includes magnetizing the magnetic material layers to form a magnetic field in the channel region between adjacent magnetic material layers; and forming source/drain regions at both ends of the channel region along the first direction.

Abstract: Semiconductor devices and fabrication methods are provided. A fin can be formed on a semiconductor substrate, a gate can be formed across the fin, and sidewall spacers can be formed across the fin on both sides of the gate. A dummy contact can be formed across the fin and on each of the both sides of the sidewall spacers. After forming an interlayer dielectric layer on the semiconductor substrate, the dummy contact can be removed to form a contact trench. The dummy contact is made of a material having an etch selectivity sufficiently higher than the fin such that the removing of the dummy contact generates substantially no damage to the fin. A conductive material can be filled in the contact trench to form a trench metal contact.

Abstract: Local interconnect structures and fabrication methods are provided. A dielectric layer can be formed on a semiconductor substrate. A first film layer can be patterned on the dielectric layer to define a region surrounded by a local interconnect structure to be formed. A sidewall spacer can be formed and patterned surrounding the first film layer on an exposed surface portion of the dielectric layer. A second film layer can be formed on the exposed surface portion of the dielectric layer and can have a top surface substantially flushed with a top surface of the sidewall spacer. The patterned sidewall spacer can be removed to form a first opening. After forming the first opening, the dielectric layer can be etched to form a second opening through the dielectric layer. The second opening can be filled with a conductive material to form the local interconnect structure.

Abstract: A method is provided for fabricating a transistor. The method includes providing a semiconductor substrate; and configuring a channel region along a first direction. The method also includes forming trenches at both sides of the channel region along a second direction; and forming a magnetic material layer in each of the trenches. Further, the method includes magnetizing the magnetic material layers to form a magnetic field in the channel region between adjacent magnetic material layers; and forming source/drain regions at both ends of the channel region along the first direction.

Abstract: A semiconductor device and method of fabricating the device are provided, the method including providing an insulating layer, wherein the insulating layer covers an active region and a gate of at least one semiconductor device; forming connection holes to the active region in the insulating layer to expose at least part of the active region, wherein the connection holes include a first portion of a first width and a second portion of a second width, the first portion of the connection holes being adjacent to the active region, and the first width being less than the second width; filling the connection holes with a metal material to form the contacts to the active region. As such, contacts formed for the active region also include a first portion of a first width and a second portion of a second width.

Abstract: Provided herein are processes for preparing an isoindoline-1,3-dione compound, or an enantiomer or a mixture of enantiomers thereof; or a pharmaceutically acceptable salt, solvate, hydrate, or polymorph thereof.

Abstract: The present invention discloses a container body structure and a vehicle having the same, the container body structure comprising: a front wall, a rear wall, a left side panel, a right side panel, a roof sheet and a floor, each of them being a separate individual part; and connectors being provided at peripheries of the front wall, the rear wall, the left side panel, the right side panel, the roof sheet and the floor respectively, for cooperating with each other during assembling, in which assembly and disassembly of the container body structure can be realized through assembly and disassembly of the connectors for the front wall, the rear wall, the left side panel, the right side panel, the roof sheet and the floor. Owing to the characteristics of the container body structure of the present invention, the production, transportation and subsequent maintenance of the container body may be simplified, and thus production efficiency may be improved and maintenance cost may be reduced.

Abstract: A vehicle door actuating device for a vehicle includes an actuator device disposed on one of a vehicle door and a door frame of the vehicle. A bumper is disposed on the other of the vehicle door and the door frame opposite the actuator device. A door sensor is disposed on the vehicle that measures door position and door movement. A controller receives data from the door sensor relating to the door position and door movement and activates the actuator device when the vehicle is in a parked position. The controller instructs the actuator device to repel the bumper to assist a user in opening the vehicle door and attract the bumper to assist a user in closing the vehicle door during closure.

Abstract: Domain-based cache management methods and systems, including domain event based priority demotion (“EPD”). In EPD, priorities of cached data blocks are demoted upon one or more domain events, such as upon encoding of one or more macroblocks of a video frame. New data blocks may be written over lowest priority cached data blocks. New data blocks may initially be assigned a highest priority. Alternatively, or additionally, one or more new data blocks may initially be assigned one of a plurality of higher priorities based on domain-based information, such as a relative position of a requested data block within a video frame, and/or a relative direction associated with a requested data block. Domain-based cache management may be implemented with one or more other cache management techniques, such as least recently used techniques. Domain-based cache management may be implemented in associative caches, including set associative caches and fully associative caches, and may be implemented with indirect indexing.

Abstract: An apparatus for vehicle door deflection and movement control. The apparatus includes a primary electromagnetic device disposed generally in a vehicle door frame or generally in an area of a vehicle body adjacent the vehicle door frame, and a controller for activating the primary electromagnetic device to push or pull the vehicle door frame. The apparatus may further include a sensor for measuring vehicle door deflection during vehicle movement. The controller may activate the primary electromagnetic device based on deflection measurements by the sensor to pull the vehicle door frame to generally cancel the vehicle door deflection.

Abstract: According to some embodiments, data to be exchanged via a system input output interface may be determined at a processor. It may then be arranged to exchange the data via a coherent input output device coupled to a coherent system interconnect. Other embodiments are described.

Abstract: The present invention discloses a container body structure and a vehicle having the same, the container body structure comprising: a front wall, a rear wall, a left side panel, a right side panel, a roof sheet and a floor, each of them being a separate individual part; and connectors being provided at peripheries of the front wall, the rear wall, the left side panel, the right side panel, the roof sheet and the floor respectively, for cooperating with each other during assembling, in which assembly and disassembly of the container body structure can be realized through assembly and disassembly of the connectors for the front wall, the rear wall, the left side panel, the right side panel, the roof sheet and the floor. Owing to the characteristics of the container body structure of the present invention, the production, transportation and subsequent maintenance of the container body may be simplified, and thus production efficiency may be improved and maintenance cost may be reduced.

Abstract: A vehicle door actuating device for a vehicle includes an actuator device disposed on one of a vehicle door and a door frame of the vehicle. A bumper is disposed on the other of the vehicle door and the door frame opposite the actuator device. A door sensor is disposed on the vehicle that measures door position and door movement. A controller receives data from the door sensor relating to the door position and door movement and activates the actuator device when the vehicle is in a parked position. The controller instructs the actuator device to repel the bumper to assist a user in opening the vehicle door and attract the bumper to assist a user in closing the vehicle door during closure.

Abstract: Domain-based cache management methods and systems, including domain event based priority demotion (“EPD”). In EPD, priorities of cached data blocks are demoted upon one or more domain events, such as upon encoding of one or more macroblocks of a video frame. New data blocks may be written over lowest priority cached data blocks. New data blocks may initially be assigned a highest priority. Alternatively, or additionally, one or more new data blocks may initially be assigned one of a plurality of higher priorities based on domain-based information, such as a relative position of a requested data block within a video frame, and/or a relative direction associated with a requested data block. Domain-based cache management may be implemented with one or more other cache management techniques, such as least recently used techniques. Domain-based cache management may be implemented in associative caches, including set associative caches and fully associative caches, and may be implemented with indirect indexing.

Abstract: According to some embodiments, data to be exchanged via a system input output interface may be determined at a processor. It may then be arranged to exchange the data via a coherent input output device coupled to a coherent system interconnect. Other embodiments are described.