Abstract: A method for forming an integrated circuit including the steps of: forming electronic capponents on a first surface of a substrate; forming a stack of interconnection levels on the first surface, each interconnection level including conductive tracks separated by an insulating material; forming at least one hole from a second surface of the substrate, opposite to the first surface, the hole stopping on one of the conductive tracks; depositing, on the walls and the bottom of the hole, a conductive layer and filling the remaining space with a filling material; and forming, in an interconnection level or at the surface of the interconnection stack, and opposite to said at least one hole, at least one region of a material having a modulus of elasticity greater than 50 GPa and an elongation at break greater than 20%, insulated from the conductive tracks.

Abstract: A security system includes an integrated circuit and a transceiver/transponder circuit. The integrated circuit includes an antenna for communicating with the transceiver/transponder circuit. An inhibiting element is associated with the integrated circuit for inhibiting communications with the transceiver/transponder circuit and for securing the data contained in the integrated circuit. The inhibiting element is an electromagnetic inhibiting element. The security system further includes a coupling element associated with the antenna of the integrated circuit for temporarily deactivating the electromagnetic inhibiting element to allow communications between the integrated circuit and the transceiver/transponder circuit.

Abstract: A method transfers a graphene layer from a donor substrate onto a final substrate. The method includes: providing a metal layer on the donor substrate; and growing a graphene layer on the metal layer. The method also includes: laminating a dry film photo-resist on the graphene layer; laminating a tape on the dry film photo-resist; chemically. etching the metal layer, obtaining an initial structure that includes the tape, the dry film photo-resist and the graphene layer; laminating the initial structure on the final substrate; thermally realizing the tape, so as to obtain an intermediate structure that includes the dry film photo-resist, the graphene layer and the final substrate; removing the dry film photo-resist; and obtaining a final structure that includes the final substrate with a transferred graphene layer.

Abstract: A user presence detection device includes a camera module with a silicon-based image sensor adapted to capture an image and a processing device configured to process the image to detect the presence of a user. The camera module further includes a light filter having a lower cut-off wavelength of between 550 nm and 700 nm and a higher cut-off wavelength of between 900 nm and 1100 nm.

Abstract: A volatile memory including volatile memory cells adapted to the performing of data write and read operations. The memory cells are arranged in rows and in columns and, further, are distributed in separate groups of memory cells for each row. The memory includes a first memory cell selection circuit configured to perform write operations and a second memory cell selection circuit, different from the first circuit, configured to perform read operations. The first circuit is capable of selecting, for each row, memory cells from one of the group of memory cells for a write operation. The second circuit is capable of selecting, for each row, memory cells from one of the groups of memory cells for a read operation.

Abstract: A device for detecting a laser attack in an integrated circuit chip formed in the upper P-type portion of a semiconductor substrate incorporating an NPN bipolar transistor having an N-type buried layer, including a detector of the variations of the current flowing between the base of said NPN bipolar transistor and the substrate.

Abstract: A process for manufacturing an SOI wafer, including the steps of: forming, in a wafer of semiconductor material, cavities delimiting structures of semiconductor material; thinning out the structures through a thermal process; and completely oxidizing the structures.

Abstract: A capped integrated device includes a semiconductor chip, incorporating an integrated device and a protective cap, bonded to the semiconductor chip for protection of the integrated device by means of a bonding layer made of a bonding material. The bonding material forms anchorage elements within recesses, formed in at least one between the semiconductor chip and the protective cap.

Abstract: A method for manufacturing an integrated circuit, including the steps of forming first transistors on a first semiconductor layer; depositing a first insulating layer above the first semiconductor layer and the first transistors, and leveling the first insulating layer; depositing a conductive layer above the first insulating layer, and covering the conductive layer with a second insulating layer; bonding a semiconductor wafer to the second insulating layer; thinning the semiconductor wafer to obtain a second semiconductor layer; and forming second transistors on the second semiconductor layer.

Abstract: An integrated circuit including: a semiconductor substrate of a first conductivity type having at least one well of a second conductivity type laterally delimited, on two opposite walls, by regions of the first conductivity type, defined at its surface; at least one region of the second conductivity type which extends in the semiconductor substrate under the well; and a system for detecting a variation of the substrate resistance between each association of two adjacent regions of the first conductivity type.

Abstract: A device for cutting a wafer provided with grooves on its upper surface having its lower surface supported by a flexible film secured to a frame. This device includes a system for locating the grooves and for positioning the frame with respect to a cutting system, and setting means for positioning the wafer in front of the locating system so that the located area is at a determined distance from the locating system.

Abstract: A method for forming a via connecting a first upper level layer to a second lower level layer, both layers being surrounded with an insulating material, the method including the steps of: a) forming an opening to reach an edge of the first layer, the opening laterally continuing beyond said edge; b) forming a layer of a protection material on said edge only; c) deepening said opening by selectively etching the insulating material to reach the second lower level layer; and d) filling the opening with at least one conductive contact material.

Abstract: An apparatus includes a first clock source, a second clock source and circuitry configured to supply a clock signal to a circuit. The circuitry operates to change the clock signal from one frequency to another different frequency. This change is made in a manner whereby no clock signal is supplied during a period of time when the change from the one frequency to the another different clock frequency is being made.

Abstract: A method for personalizing a SIM card may include loading the SIM card on a conveyor belt of a production machine, programming the SIM card, and unloading the programmed SIM card from the conveyor belt. If the intermediate result is wrong, the method may check an intermediate result of the programming and re-program the SIM card.

Abstract: An asynchronous level shifter electronic circuit including: a transmitter, which can be coupled to a first voltage and generates a communication signal; a receiver, which can be coupled to a second voltage; and a capacitive coupling stage, which receives the communication signal and supplies a corresponding filtered signal to the receiver. The receiver includes: a threshold device, which has an input terminal and an output terminal and switches an electrical quantity on the output terminal between a first value and a second value, as a function of corresponding transitions through a threshold of a first intermediate signal present on the input terminal, to generate a second intermediate signal; and a biasing circuit, which generates the first intermediate signal to have a d.c. component, which is a function of the second intermediate signal, and superposed on which is a variable component, which is a function of the filtered signal.

Abstract: A control device controls a switching converter. The converter has an input alternating supply voltage, a regulated direct voltage on the output terminal, and a switch connected to an inductor. The control device controls the closing and opening time period of said switch for each cycle and receives a first input signal representative of the current flowing through one element of the converter. The control device comprises a counter configured to count a time period, a comparator configured to compare said first input signal with a second signal, digital control block configured to control the closing and opening of said switch and to activate said counter to start the counting of said time period when the said first input signal crosses said second signal, with said switch being closed. The digital control block is configured to open the switch when the counter finishes the counting of said time period.

Abstract: An image sensor is formed by a pixel array and a microlens array. One microlens is associated with each pixel. The microlens is positioned in a manner that is offset from a center of its associated pixel. The positioning offset for the microlens is a combination of a first offset determined as a function of the pixel's position relative to a center of the image sensor and a second offset that is randomly selected (both in terms of distance and radial direction). The random offset provides the effect that the spatial frequency information from the shifted microlens array is randomly distributed so as to provide different spatial frequencies and effectively cancel out Moiré interference.

Abstract: A switching circuit includes a first input stage having an input for receiving a first input signal, an output, and a power terminal for receiving an increasing analog current, a second input stage having an input for receiving a second input signal, an output, and a power terminal for receiving a decreasing analog current, and an output node coupled to the outputs of the first input stage and the second input stage for providing a switched output signal. An output stage is coupled between the first and second input stages and the output node. The first and second input stages are operational amplifiers.

Abstract: A method of operating a speaker system including a speaker coupled to an amplifier, and a dedicated digital speaker protection circuit includes turning on the amplifier in a mute mode, after a first delay period, issuing a play command to the amplifier to place the amplifier in a play mode, but without an input signal during a second delay period, and performing a speaker offset detection during the second delay period, wherein, if there is an offset, then the amplifier is forced back into the mute mode, and if there is no offset, then the amplifier is allowed to continue to operate in the play mode. The method also includes issuing a speaker protection control signal or command if an offset is detected.

Abstract: A thermoelectric device includes a plurality of thin-film thermoelectric elements. Each thin-film thermoelectric element is a Seebeck-Peltier device. The thin-film thermoelectric elements are electrically coupled in parallel with each other. The thermoelectric device may be fabricated using conventional semiconductor processing technologies and may be a thin-film type device.