Abstract: A charge pump having only NMOS devices charges a plurality of capacitors to a parallel charged voltage level by electrically connecting the capacitors in parallel between an input voltage node and a ground by activating a plurality of first NMOS transistor switches and a plurality of second NMOS transistor switches and deactivating a plurality of third NMOS transistor switches. The charge pump then generates a series capacitor output voltage level at a capacitor series output node by electrically connecting and discharging the capacitors in series between the input voltage node and the capacitor series output node by activating the third NMOS transistor switches and deactivating the first NMOS transistor switches and the second NMOS transistor switches.

Abstract: A width of a voltage pulse signal is directly proportional to a difference between first and second resistances in a pulse generator. The voltage pulse signal is generated with a ramp signal, two reference voltages, and two comparators. The first reference voltage is generated with the first resistance and a first current, and the second reference voltage is generated with the second resistance and a second current. The first comparator produces a first comparator output in response to the first reference voltage and the ramp signal, and the second comparator produces a second comparator output in response to the second reference voltage and the ramp signal. A logic circuitry generates the voltage pulse signal in response to the two comparator outputs.

Abstract: An improved circuit or method generates first and second initial pulses that do not overlap. First and second drive pulses are generated based on the first and second initial pulses, respectively. A first transistor is turned on with the first drive pulses. A second transistor is turned on with the second drive pulses. A current flows in response to an on-time state of the first transistor overlapping with an on-time state of the second transistor. A delay of the second drive pulses is decreased based on a time of the current flow overlapping with one of the first initial pulses; and the delay of the second drive pulses is increased based on the time of the current flow overlapping with one of the second initial pulses.

Abstract: A charge pump having only NMOS devices charges a plurality of capacitors to a parallel charged voltage level by electrically connecting the capacitors in parallel between an input voltage node and a ground by activating a plurality of first NMOS transistor switches and a plurality of second NMOS transistor switches and deactivating a plurality of third NMOS transistor switches. The charge pump then generates a series capacitor output voltage level at a capacitor series output node by electrically connecting and discharging the capacitors in series between the input voltage node and the capacitor series output node by activating the third NMOS transistor switches and deactivating the first NMOS transistor switches and the second NMOS transistor switches.

Abstract: An improved circuit or method generates first and second initial pulses that do not overlap. First and second drive pulses are generated based on the first and second initial pulses, respectively. A first transistor is turned on with the first drive pulses. A second transistor is turned on with the second drive pulses. A current flows in response to an on-time state of the first transistor overlapping with an on-time state of the second transistor. A delay of the second drive pulses is decreased based on a time of the current flow overlapping with one of the first initial pulses; and the delay of the second drive pulses is increased based on the time of the current flow overlapping with one of the second initial pulses.

Abstract: A width of a voltage pulse signal is directly proportional to a difference between first and second resistances in a pulse generator. The voltage pulse signal is generated with a ramp signal, two reference voltages, and two comparators. The first reference voltage is generated with the first resistance and a first current, and the second reference voltage is generated with the second resistance and a second current. The first comparator produces a first comparator output in response to the first reference voltage and the ramp signal, and the second comparator produces a second comparator output in response to the second reference voltage and the ramp signal. A logic circuitry generates the voltage pulse signal in response to the two comparator outputs.

Abstract: A charge pump having only NMOS devices charges a plurality of capacitors to a parallel charged voltage level by electrically connecting the capacitors in parallel between an input voltage node and a ground by activating a plurality of first NMOS transistor switches and a plurality of second NMOS transistor switches and deactivating a plurality of third NMOS transistor switches. The charge pump then generates a series capacitor output voltage level at a capacitor series output node by electrically connecting and discharging the capacitors in series between the input voltage node and the capacitor series output node by activating the third NMOS transistor switches and deactivating the first NMOS transistor switches and the second NMOS transistor switches.

Abstract: An apparatus includes a first lateral diffusion field effect transistor (LDFET) having a first threshold voltage and that includes a first gate electrode, a first drain contact, a first source contact, and a first electrically conductive shield plate separated from the first gate electrode and the first source contact by a first interlayer dielectric. A second LDFET of the apparatus has a second threshold voltage and includes a second gate electrode, a second drain contact, and a second source contact. The second source contact is electrically connected to the first source contact of the first LDFET. A control circuit of the apparatus is electrically coupled to the first electrically conductive shield plate and is configured to apply to the first electrically conductive shield plate a first gate bias voltage of a first level to set the first threshold voltage of the first LDFET to a first desired threshold voltage.

Abstract: A semiconductor package includes a leadframe having an electrically conductive paddle, electrically conductive perimeter package leads, a first electrically conductive clip electrically connected to a first set of the package leads, and a second electrically conductive clip electrically connected to a second set of the package leads. The semiconductor package includes a single semiconductor die. The die includes a front-side active layer having an integrated power structure of two or more transistors. The die includes a backside portion having a backside contact electrically coupled to at least one of the two or more transistors and to the paddle. One or more first front-side contacts of the die are electrically coupled to at least one of the transistors and to the first clip, and one or more second front-side contacts of the die are electrically coupled to at least one of the transistors and to the second clip.

Abstract: A semiconductor package includes a leadframe having an electrically conductive paddle, electrically conductive perimeter package leads, a first electrically conductive clip electrically connected to a first set of the package leads, and a second electrically conductive clip electrically connected to a second set of the package leads. The semiconductor package includes a single semiconductor die. The die includes a front-side active layer having an integrated power structure of two or more transistors. The die includes a backside portion having a backside contact electrically coupled to at least one of the two or more transistors and to the paddle. One or more first front-side contacts of the die are electrically coupled to at least one of the transistors and to the first clip, and one or more second front-side contacts of the die are electrically coupled to at least one of the transistors and to the second clip.

Abstract: A vertical semiconductor device (e.g. a vertical power device, an IGBT device, a vertical bipolar transistor, a UMOS device or a GTO thyristor) is formed with an active semiconductor region, within which a plurality of semiconductor structures have been fabricated to form an active device, and below which at least a portion of a substrate material has been removed to isolate the active device, to expose at least one of the semiconductor structures for bottom side electrical connection and to enhance thermal dissipation. At least one of the semiconductor structures is preferably contacted by an electrode at the bottom side of the active semiconductor region.

Abstract: Conductive clip connection arrangements for semiconductor packages are disclosed. Some examples provide electrically conductive clip connection arrangements for semiconductor packages that improve electrical performance and fabrication reliability while maintaining compatibility with existing quality control processes. Some examples provide innovative conductive clip structures and die pad arrangements that broaden the range of options available for tailoring the physical configurations of one or more of the constituent conductive clips and/or die pads to achieve specific electrical performance targets.

Abstract: A semiconductor package includes a leadframe, having perimeter package leads and a ground voltage lead, a bottom semiconductor die flip-chip mounted to the leadframe, and a top semiconductor die. The bottom semiconductor die has a first frontside active layer with first frontside electrical contacts electrically connected to the leadframe, a first backside portion, and a buried oxide layer situated between the first frontside active layer and the first backside portion. The top semiconductor die is mounted to the first backside portion. The first frontside active layer includes a circuit electrically connected to the first backside portion by a backside electrical connection through the buried oxide layer. The first backside portion of the bottom semiconductor die is electrically connected to the ground voltage lead through a first electrical contact of the first frontside electrical contacts to minimize crosstalk.

Abstract: A vertical semiconductor device (e.g. a vertical power device, an IGBT device, a vertical bipolar transistor, a UMOS device or a GTO thyristor) is formed with an active semiconductor region, within which a plurality of semiconductor structures have been fabricated to form an active device, and below which at least a portion of a substrate material has been removed to isolate the active device, to expose at least one of the semiconductor structures for bottom side electrical connection and to enhance thermal dissipation. At least one of the semiconductor structures is preferably contacted by an electrode at the bottom side of the active semiconductor region.

Abstract: A semiconductor package includes a leadframe having perimeter package leads and electrical connectors, a single semiconductor die having a back-side electrical contact and front-side electrical contacts, an electrically conductive clip (“clip”), and a top semiconductor die having a frontside and a backside. The single semiconductor die includes two or more transistors. Two or more of the front-side electrical contacts of the semiconductor die are electrically coupled to and physically mounted to respective electrical contacts of the leadframe. An electrical contact surface of the clip is electrically coupled to and physically mounted to an electrical connector of the leadframe. Another electrical contact surface of the clip is physically mounted to and electrically coupled to the back-side electrical contact of the semiconductor die. The backside of the top semiconductor die is physically mounted to yet another surface of the electrically conductive clip.

Abstract: A semiconductor package includes a leadframe, having perimeter package leads and a ground voltage lead, a bottom semiconductor die flip-chip mounted to the leadframe, and a top semiconductor die. The bottom semiconductor die has a first frontside active layer with first frontside electrical contacts electrically connected to the leadframe, a first backside portion, and a buried oxide layer situated between the first frontside active layer and the first backside portion. The top semiconductor die is mounted to the first backside portion. The first frontside active layer includes a circuit electrically connected to the first backside portion by a backside electrical connection through the buried oxide layer. The first backside portion of the bottom semiconductor die is electrically connected to the ground voltage lead through a first electrical contact of the first frontside electrical contacts to minimize crosstalk.

Abstract: A metal-oxide-semiconductor field-effect transistor (MOSFET) power device includes an active region formed on a bulk semiconductor substrate, the active region having a first conductivity type formed on at least a portion of the bulk semiconductor substrate. A first terminal is formed on an upper surface of the structure and electrically connects with at least one other region having the first conductivity type formed in the active region. A buried well having a second conductivity type is formed in the active region and is coupled with a second terminal formed on the upper surface of the structure. The buried well and the active region form a clamping diode which positions a breakdown avalanche region between the buried well and the first terminal. A breakdown voltage of at least one of the power devices is a function of characteristics of the buried well.

Abstract: In an active layer over a semiconductor substrate, a semiconductor device has a first lateral diffusion field effect transistor (LDFET) that includes a source, a drain, and a gate, and a second LDFET that includes a source, a drain, and a gate. The source of the first LDFET and the drain of the second LDFET are electrically connected to a common node. A first front-side contact and a second front-side contact are formed over the active layer, and a substrate contact electrically connected to the semiconductor substrate is formed. Each of the first front-side contact, the second front-side contact, and the substrate contact is electrically connected to a different respective one of the drain of the first LDFET, the source of the second LDFET, and the common node.

Abstract: Conductive clip connection arrangements for semiconductor packages are disclosed. Some examples provide electrically conductive clip connection arrangements for semiconductor packages that improve electrical performance and fabrication reliability while maintaining compatibility with existing quality control processes. Some examples provide innovative conductive clip structures and die pad arrangements that broaden the range of options available for tailoring the physical configurations of one or more of the constituent conductive clips and/or die pads to achieve specific electrical performance targets.

Abstract: Embodiments of the present invention provide for the enhancement of transistors in a semiconductor structure using a strain layer. The structure comprises a patterned layer consisting of an excavated region and a pattern region, a strain layer located in the excavated region and on the pattern region, an active layer located above the strain layer, a field effect transistor formed in the active layer, and a handle layer located above the active layer. The field effect transistor comprises a source, a drain, and a channel. The channel lies completely within a lateral extent of the pattern region. The source and the drain each lie only partially within the lateral extent of the pattern region. The strain layer alters a carrier mobility of the channel. In some embodiments, the strain layer is introduced to the back side of a semiconductor-on-insulator structure.