Abstract: A vertical semiconductor device (e.g. a vertical power device, an IGBT device, a vertical bipolar transistor, a UMOS device or a GTO thyristor) is formed with an active semiconductor region, within which a plurality of semiconductor structures have been fabricated to form an active device, and below which at least a portion of a substrate material has been removed to isolate the active device, to expose at least one of the semiconductor structures for bottom side electrical connection and to enhance thermal dissipation. At least one of the semiconductor structures is preferably contacted by an electrode at the bottom side of the active semiconductor region.

Abstract: An electrically adjustable resistor comprises a resistive polysilicon layer dielectrically isolated from one or more doped semiconducting layers. A tunable voltage is applied to the doped semiconducting layers, causing the resistance of the polysilicon layer to vary. Multiple matched electrically adjustable resistors may be fabricated on a single substrate, tuned by a single, shared doped semiconductor layer, creating matched, tunable resistor pairs that are particularly useful for differential amplifier applications. Multiple, independently adjustable resistors may also be fabricated on a common substrate.

Abstract: Embodiments of the present invention provide for the dissipation of heat from semiconductor-on-insulator (SOI) structures. In one embodiment, a method for fabricating an integrated circuit is disclosed. In a first step, active circuitry is formed in an active layer of a SOI wafer. In a second step, substrate material is removed from a substrate layer disposed on a back side of the SOI wafer. In a third step, insulator material is removed from the back side of the SOI wafer to form an excavated insulator region. In a fourth step, a thermal dissipation layer is deposited on said excavated insulator region. The thermal dissipation layer is thermally conductive and electrically insulating.

Abstract: Embodiments of the present invention provide for the provisioning of efficient support to semiconductor-on-insulator (SOI) structures. Embodiments of the present invention may additionally provide for SOI structures with improved heat dissipation performance while preserving the beneficial electrical device characteristics that accompany SOI architectures. In one embodiment, an integrated circuit is disclosed. The integrated circuit comprises a silicon-on-insulator die from a silicon-on-insulator wafer. The silicon on insulator die comprises an active layer, an insulator layer, a substrate, and a strengthening layer. The substrate consists of an excavated substrate region, and a support region, the support region is in contact with the insulator layer. The support region and the strengthening layer are configured to act in combination to provide a majority of a required stabilizing force to the silicon-on-insulator die when it is singulated from the silicon-on-insulator wafer.

Abstract: Embodiments of the present invention provide for the removal of excess carriers from the body of active devices in semiconductor-on-insulator (SOI) structures. In one embodiment, a method of fabricating an integrated circuit is disclosed. In one step, an active device is formed in an active layer of a semiconductor-on-insulator wafer. In another step, substrate material is removed from a substrate layer disposed on a back side of the SOI wafer. In another step, an insulator material is removed from a back side of the SOI wafer to form an excavated insulator region. In another step, a conductive layer is deposited on the excavated insulator region. Depositing the conductive layer puts it in physical contact with a body of an active device in a first portion of the excavated insulator region. The conductive layer then couples the body to a contact in a second detached portion of the excavated insulator region.

Abstract: An electrically adjustable resistor comprises a resistive polysilicon layer dielectrically isolated from one or more doped semiconducting layers. A tunable voltage is applied to the doped semiconducting layers, causing the resistance of the polysilicon layer to vary. Multiple matched electrically adjustable resistors may be fabricated on a single substrate, tuned by a single, shared doped semiconductor layer, creating matched, tunable resistor pairs that are particularly useful for differential amplifier applications. Multiple, independently adjustable resistors may also be fabricated on a common substrate.

Abstract: A CMOS delay circuit for differential signals is provided. By adjusting the amplitude of clamping voltages, the delay period may be adjusted to a desired level. By using a single constant current source to charge both output nodes, current consumption is reduced.

Abstract: A plurality of binary signals each having first and second logic levels respectively representing a binary "1" and a binary "0" and each indicating a binary digit of an individual binary significance cumulatively represent an adjustable delay to be provided by a plurality of delay elements. A first particular number of the binary signals of greatest binary significance are decoded to provide, in a thermometer code, a plurality of signals each having first and second amplitudes. The signals in the thermometer code control the operation of individual switches each having first and second operative relationships to provide respectively for a maximum delay or a minimum delay in an associated one of the delay elements. The binary signals of least binary significance are decoded to produce an analog signal variable between the first and second amplitudes.

Abstract: A plurality of binary signals each having first and second logic levels respectively representing a binary "1" and a binary "0" and each indicating a binary digit of an individual binary significance cumulatively represent an adjustable delay to be provided by a plurality of delay elements. A first particular number of the binary signals of greatest binary significance are decoded to provide, in a thermometer code, a plurality of signals each having first and second amplitudes. The signals in the thermometer code control the operation of individual switches each having first and second operative relationships to provide respectively for a maximum delay or a minimum delay in an associated one of the delay elements. The binary signals of least binary significance are decoded to produce an analog signal variable between the first and second amplitudes.

Abstract: First and second complementary input voltages control current flow through first and second switches (e.g. semiconductor devices) each respectively connected in first and second control circuits with a first constant current source. When the input voltages change, current starts to increase through one control circuit to produce increases in the voltage drop across an impedance (e.g. resistor) in such circuit. When a particular voltage difference is produced between the impedance voltage and an adjustable biasing voltage, a third switch (e.g. semiconductor device) closes to produce a first resultant voltage. The resultant delay in the third switch closure is dependent upon the adjustable magnitude of the biasing voltage. As the voltage increases across the impedance in the one control circuit, the voltage decreases across an impedance in the other control circuit, causing a second resultant voltage to be produced at a fourth switch (e.g. semiconductor device).