Abstract: A thin film resistor (60) is contained between two metal interconnect layers (40, 100) of an integrated circuit. Contact may be made to the resistor (60) through vias (95) from the metal layer (100) above the resistor (60) to both the thin film resistor (60) and the underlying metal layer (40) simultaneously. The resistor (60) may include portions of a hard mask (70) under the vias (95) to protect the resistor material (60) during the via (95) etch. This design provides increased flexibility in fabricating the resistor (60) since processes, materials, and chemicals do not have to satisfy the conditions of both the resistor (60) and the rest of the integrated circuit (especially the interconnect layer 40) simultaneously.

Abstract: A resonant microcavity display (20) having microcavity with a substrate (25), a phosphor active region (50) and front and rear reflectors (30 and 60). The front and rear reflectors may be spaced to create either a standing or traveling electromagnetic wave to enhance the efficiency of the light transmission.

Abstract: A resonant microcavity display (20) having microcavity with a substrate (25), a phosphor active region (50) and front and rear reflectors (30 and 60). The front and rear reflectors may be spaced to create either a standing or treaveling eledtromagnetic wave to enhance the efificenty of the light transmission.

Abstract: A method for integrating a thin film resistor into an interconnect process flow where one of the metal layers is used as a hardmask. After a via (42) etch and fill, the thin film resistor material (62) is deposited. The metal interconnect layer (76) is then deposited, including any barrier layers desired. The metal leads (70) are then etched together with the shape of the thin film resistor (60). The metal (76) over the thin film resistor (60) is then removed.

Abstract: A thin film resistor processing flow solves the problem of accurately incorporating the resistor (80) to be trimmed in an optimized multilayer stack (60,70). This is achieved by measuring the total thickness of the dielectric stack (60) between the silicon substrate and the top of the dielectric stack just prior to the formation of the thin film resistor (80). Then, the thickness of the dielectric stack (60) is adjusted (60+70) to be an odd integer number of laser quarter wavelengths. The thin film resistor (60) is then formed and overlying dielectric (120) is deposited. The thickness of the overlying dielectric (120) may likewise be adjusted (120+130) to be an odd integer number of laser quarter wavelengths.

Abstract: A thin film resistor (60) having a low TCR (temperature coefficient of resistance) and a method for engineering the TCR of a material for a thin film resistor (60). The thin film resistor (60) comprises a material with a sheet resistance selected for low or zero TCR. In order to increase the sheet resistance, a thinner (e.g., 20-50 Å) layer of material may be used for thin film resistor (60).

Abstract: A resonant microcavity display (20) having microcavity with a substrate (25), a phosphor active region (50) and front and rear reflectors (30 and 60). The front and rear reflectors may be spaced to create either a standing or treaveling eledtromagnetic wave to enhance the efificenty of the light transmission.

Abstract: A resonant microcavity display (20) having microcavity with a substrate (25), a phosphor active region (50) and front and rear reflectors (30 and 60). The front and rear reflectors may be spaced to create either a standing or treaveling eledtromagnetic wave to enhance the efificenty of the light transmission.

Abstract: A resonant microcavity display (20) having microcavity with a substrate (25), a phosphor active region (50) and front and rear reflectors (30 and 60). The front and rear reflectors may be spaced to create either a standing or taveling electromagnetic wave to enhance the efficiency of the light transmission.

Abstract: A resonant microcavity display (20) having microcavity with a substrate (25), a phosphor active region (50) and front and rear reflectors (30 and 60). The front and rear reflectors may be spaced to create either a standing or traveling electromagnetic wave to enhance the efficiency of the light transmission.

Abstract: A resonant microcavity display, comprising a thin-film resonant microcavity with a phosphor active region is disclosed. The microcavity comprises: a rigid substrate; a front reflector disposed upon the rigid substrate; a phosphor active region disposed upon the front reflector; and a back reflector disposed upon the active region. The display preferentially emits light that propagates along the axis perpendicular to plane of the display, due to its quantum mechanical properties. It exhibits high external efficiency, highly controllable chromaticity, high resolution, highly directional output and highly efficient heat transfer characteristics. For these reasons it provides a suitable display element for projection screen television, high definition television, direct view television, flat panel displays, optical coupling, and other applications.

Abstract: A resonant microcavity display, comprising a thin-film resonant microcavity with a phosphor active region is disclosed. The microcavity comprises: a rigid substrate; a front reflector disposed upon the rigid substrate; a phosphor active region disposed upon the front reflector; and a back reflector disposed upon the active region. The display preferentially emits light that propagates along the axis perpendicular to plane of the display, due to its quantum mechanical properties. It exhibits high external efficiency, highly controllable chromaticity, high resolution, highly directional output and highly efficient heat transfer characteristics. For these reasons it provides a suitable display element for projection screen television, high definition television, direct view television, flat panel displays, optical coupling, and other applications.