Patents by Inventor Su Chen
Su Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240150448Abstract: The present invention relates to neutralizing antibodies of the human pituitary adenylate cyclase activating polypeptide type I receptor (PAC1) and pharmaceutical compositions comprising such antibodies. Methods of treating or preventing headache conditions, such as migraine and cluster headache, using the neutralizing antibodies are also described.Type: ApplicationFiled: December 19, 2023Publication date: May 9, 2024Applicant: AMGEN INC.Inventors: Neeraj Jagdish AGRAWAL, Irwin CHEN, Su CHONG, Bryna FUCHSLOCHER, Kevin GRAHAM, Agnes Eva HAMBURGER, Mark Leo MICHAELS, Christopher MOHR, Derek E. PIPER, Kenneth William WALKER, Zhulun WANG, Cen XU
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Publication number: 20240152880Abstract: A multi-channel payment method for a multi-channel payment system comprises the payer or the payee who initiated the payment request logs in to the multi-channel payment system; the payer or the payee who initiated the payment request placing an order in the multi-channel payment system, wherein the order comprises a designated payment gateway; the multi-channel payment system determining a predicted fee of the order according to the designated payment gateway, past order records, and a real-time exchange rate; the multi-channel payment system performing an anti-money laundering verification of the order; the payer reviewing the order and the predicted fee through a multiple auditing method; and the multi-channel payment system executing payment from the payer to the payee according to the order and the designated payment gateway, and storing a payment detail of the order.Type: ApplicationFiled: February 13, 2023Publication date: May 9, 2024Applicant: OBOOK INC.Inventors: Chun-Kai Wang, Chung-Han Hsieh, Chun-Jen Chen, Po-Hua Lin, Wei-Te Lin, Pei-Hsuan Weng, Mei-Su Wang, I-Cheng Lin, Cheng-Wei Chen
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STACKED FIELD EFFECT TRANSISTOR STRUCTURE WITH INDEPENDENT GATE CONTROL BETWEEN TOP AND BOTTOM GATES
Publication number: 20240145473Abstract: A semiconductor device includes a first transistor and a first gate electrically coupled to the first transistor. A second transistor is positioned on top of the first transistor. A second gate is electrically coupled to the second transistor. A dielectric isolation layer is positioned between the first gate and the second gate. A first conductive contact is electrically coupled to the first gate. A second conductive contact is electrically coupled to the second gate. A control of the first gate through the first conductive contact is independent of a control of the second gate through the second conductive contact.Type: ApplicationFiled: October 26, 2022Publication date: May 2, 2024Inventors: Tsung-Sheng Kang, Su Chen Fan, Jingyun Zhang, Ruqiang Bao, Son Nguyen -
Publication number: 20240128211Abstract: Some implementations described herein provide techniques and apparatuses for a stacked semiconductor die package. The stacked semiconductor die package may include an upper semiconductor die package above a lower semiconductor die package. The stacked semiconductor die package includes one or more rows of pad structures located within a footprint of a semiconductor die of the lower semiconductor die package. The one or more rows of pad structures may be used to mount the upper semiconductor die package above the lower semiconductor die package. Relative to another stacked semiconductor die package including a row of dummy connection structures adjacent to the semiconductor die that may be used to mount the upper semiconductor die package, a size of the stacked semiconductor die package may be reduced.Type: ApplicationFiled: April 27, 2023Publication date: April 18, 2024Inventors: Chih-Wei WU, An-Jhih SU, Hua-Wei TSENG, Ying-Ching SHIH, Wen-Chih CHIOU, Chun-Wei CHEN, Ming Shih YEH, Wei-Cheng WU, Der-Chyang YEH
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Publication number: 20240128345Abstract: A semiconductor structure is presented including a plurality of field effect transistor (FET) devices, each FET device having a different gate threshold voltage, first spacers disposed on sidewalls of each FET device, second spacers disposed over and in direct contact with the first spacers, the second spacers having a width greater than a width of the first spacers, and a gate contact directly contacting an FET device of the plurality of FET devices, where only an upper portion of the gate contact directly contacts third spacers on opposed ends thereof. The second spacers can have a bi-layer configuration and the gate contact wraps around a top portion of the FET device in direct contact with the gate contact.Type: ApplicationFiled: October 12, 2022Publication date: April 18, 2024Inventors: Ruilong Xie, Su Chen Fan, Ravikumar Ramachandran, Julien Frougier
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Publication number: 20240113176Abstract: A semiconductor device includes a field effect transistor (FET). The FET includes a gate and a first source or drain (S/D) region. A frontside S/D contact may be connected to and extend vertically upward from a top surface of the first S/D region. The FET further includes a second S/D region. The second S/D region includes a conduit liner and an inner column internal to the conduit liner that extends below a bottom surface of the wraparound gate. A backside S/D contact may be connected to and extend vertically downward from a bottom surface of the second S/D region.Type: ApplicationFiled: October 4, 2022Publication date: April 4, 2024Inventors: Ruilong Xie, Lawrence A. Clevenger, Brent A. Anderson, Kisik Choi, Su Chen Fan, Shogo Mochizuki, SON NGUYEN
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Publication number: 20240112985Abstract: A semiconductor device includes a nanostructure field effect transistor (FET). The FET includes a gate and a first source or drain (S/D) region. A frontside S/D contact may be connected to and extends vertically upward from a top surface of the first S/D region. The FET further includes a second S/D region. The second S/D region extends below a bottom surface of the gate. A backside S/D contact may be connected to and extend vertically downward from a bottom surface of the second S/D region.Type: ApplicationFiled: October 4, 2022Publication date: April 4, 2024Inventors: Ruilong Xie, Lawrence A. Clevenger, Brent A. Anderson, Kisik Choi, Su Chen Fan, Shogo Mochizuki, SON NGUYEN
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Publication number: 20240107183Abstract: In some implementations, a method of synchronizing a content generation and delivery architecture to reduce the latency associated with image passthrough. The method includes: determining a temporal offset associated with the content generation and delivery architecture to reduce a photon-to-photon latency across the content generation and delivery architecture; obtaining a first reference rate associated with a portion of the content generation and delivery architecture; generating, via synchronization circuitry, a synchronization signal for the content generation and delivery architecture based at least in part on the first reference rate; and operating the content generation and delivery architecture according to the synchronization signal and the temporal offset.Type: ApplicationFiled: September 18, 2023Publication date: March 28, 2024Inventors: Joseph Cheung, Kaushik Raghunath, Michael Bekerman, Moinul H. Khan, Vivaan Bahl, Yung-Chin Chen, Yuqing Su
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Patent number: 11940388Abstract: Example methods are provided to improve placement of an adaptor (210,220) to a mobile computing device (100) to measure a test strip (221) coupled to the adaptor (220) with a camera (104) and a screen (108) on a face of the mobile computing device (100). The method may include displaying a light area on a first portion of the screen (108). The first portion may be adjacent to the camera (104). The light area and the camera (104) may be aligned with a key area of the test strip (221) so that the camera (104) is configured to capture an image of the key area. The method may further include providing first guiding information for a user to place the adaptor (210,220) to the mobile computing device (100) according to a position of the light area on the screen (108).Type: GrantFiled: March 16, 2018Date of Patent: March 26, 2024Assignee: IXENSOR CO., LTD.Inventors: Yenyu Chen, An Cheng Chang, Tai I Chen, Su Tung Yang, Chih Jung Hsu, Chun Cheng Lin, Min Han Wang, Shih Hao Chiu
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Patent number: 11941884Abstract: Systems and methods for image processing are described. Embodiments of the present disclosure receive an image having a plurality of object instances; encode the image to obtain image features; decode the image features to obtain object features; generate object detection information based on the object features using an object detection branch, wherein the object detection branch is trained based on a first training set using a detection loss; generate semantic segmentation information based on the object features using a semantic segmentation branch, wherein the semantic segmentation branch is trained based on a second training set different from the first training set using a semantic segmentation loss; and combine the object detection information and the semantic segmentation information to obtain panoptic segmentation information that indicates which pixels of the image correspond to each of the plurality of object instances.Type: GrantFiled: November 12, 2021Date of Patent: March 26, 2024Assignee: ADOBE INC.Inventors: Jason Wen Yong Kuen, Bo Sun, Zhe Lin, Simon Su Chen
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Publication number: 20240096811Abstract: The present disclosure provides a package structure and a method of manufacturing a package. The package structure includes a semiconductor die laterally encapsulated by an encapsulant, a redistribution structure and bumps. The redistribution structure is disposed on the semiconductor die and the encapsulant, and is electrically connected with the at least one semiconductor die. The bumps are disposed on the redistribution structure. The redistribution structure includes dielectric layers and metallic pattern layers sandwiched between the dielectric layers. The redistribution structure includes metallic pads on an outermost dielectric layer of the dielectric layers, and the outmost dielectric layer has undercut cavities beside the metallic pads.Type: ApplicationFiled: January 11, 2023Publication date: March 21, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Kuan-Chung Lu, Bo-Tao Chen, An-Jhih Su, Ming-Shih Yeh, Der-Chyang Yeh
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Patent number: 11932637Abstract: The present invention relates to monobactam compounds of Formula I: and pharmaceutically acceptable salts thereof. The present invention also relates to compositions which comprise a monobactam compound of structural formula I or a pharmaceutically acceptable salt thereof, and a pharmaceutically acceptable carrier. The invention further relates to methods for treating a bacterial infection comprising administering to the patient a therapeutically effective amount of a compound of structural formula I, either alone or in combination with a therapeutically effective amount of a second beta-lactam antibiotic.Type: GrantFiled: November 16, 2022Date of Patent: March 19, 2024Assignee: Merck Sharp & Dohme LLCInventors: Helen Y. Chen, Shuzhi Dong, Zhiyong Hu, Jing Su, Tao Yu, Yong Zhang
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Patent number: 11935929Abstract: A stacked device is provided. The stacked device includes a reduced height active device layer, and a plurality of lower source/drain regions in the reduced height active device layer. The stacked device further includes a lower interlayer dielectric (ILD) layer on the plurality of lower source/drain regions, and a conductive trench spacer in the lower interlayer dielectric (ILD) layer, wherein the conductive trench spacer is adjacent to one of the plurality of lower source/drain regions. The stacked device further includes a top active device layer adjacent to the lower interlayer dielectric (ILD) layer, and an upper source/drain section in the top active device layer. The stacked device further includes a shared contact in electrical connection with the upper source/drain section, the conductive trench spacer, and the one of the plurality of lower source/drain regions.Type: GrantFiled: October 21, 2021Date of Patent: March 19, 2024Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Ruilong Xie, Julien Frougier, Su Chen Fan, Ravikumar Ramachandran, Nicolas Loubet
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Patent number: 11935217Abstract: The present disclosure relates to systems, methods, and non-transitory computer readable media for accurately, efficiently, and flexibly generating harmonized digital images utilizing a self-supervised image harmonization neural network. In particular, the disclosed systems can implement, and learn parameters for, a self-supervised image harmonization neural network to extract content from one digital image (disentangled from its appearance) and appearance from another from another digital image (disentangled from its content). For example, the disclosed systems can utilize a dual data augmentation method to generate diverse triplets for parameter learning (including input digital images, reference digital images, and pseudo ground truth digital images), via cropping a digital image with perturbations using three-dimensional color lookup tables (“LUTs”).Type: GrantFiled: March 12, 2021Date of Patent: March 19, 2024Assignee: Adobe Inc.Inventors: He Zhang, Yifan Jiang, Yilin Wang, Jianming Zhang, Kalyan Sunkavalli, Sarah Kong, Su Chen, Sohrab Amirghodsi, Zhe Lin
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Patent number: 11937203Abstract: A signal transmission method and an apparatus. The method includes: a location management device receives first SRS resource configuration information from a serving cell and/or a neighboring cell. The location management device sends second SRS resource configuration information to a terminal device, where the second SRS resource configuration information includes third SRS resource configuration information and a downlink reference signal associated with an SRS resource indicated by the third SRS resource configuration information, and the third SRS resource configuration information is a part or all of the first SRS resource configuration information. The location management device configures the SRS resource for the terminal device, so that the SRS resource can be associated with the downlink reference signal. This helps the terminal device obtain information about a transmission beam for sending an SRS, and therefore SRS receiving efficiency of the cell can be improved to some extent.Type: GrantFiled: August 13, 2021Date of Patent: March 19, 2024Assignee: HUAWEI TECHNOLOGIES CO., LTD.Inventors: Su Huang, Lei Chen, Keyvan Zarifi
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Patent number: 11929260Abstract: Embodiments of methods and apparatus for reducing warpage of a substrate are provided herein. In some embodiments, a method for reducing warpage of a substrate includes: applying an epoxy mold over a plurality of dies on the substrate in a dispenser tool; placing the substrate on a pedestal in a curing chamber, wherein the substrate has an expected post-cure deflection in a first direction; inducing a curvature on the substrate in a direction opposite the first direction; and curing the substrate by heating the substrate in the curing chamber.Type: GrantFiled: August 24, 2021Date of Patent: March 12, 2024Assignee: APPLIED MATERIALS, INC.Inventors: Fang Jie Lim, Chin Wei Tan, Jun-Liang Su, Felix Deng, Sai Kumar Kodumuri, Ananthkrishna Jupudi, Nuno Yen-Chu Chen
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Patent number: 11927840Abstract: An electronic device includes a display panel and a viewing angle control unit disposed opposite to the display panel. The viewing angle control unit includes a first substrate; a second substrate disposed opposite to the first substrate; a plurality of protrusions disposed between the first substrate and the second substrate; and a plurality of shielding units disposed between the first substrate and the second substrate and disposed corresponding to the plurality of protrusions. One of the shielding units forms a first projection on the first substrate, one of the protrusions forms a second projection on the first substrate, and the second projection falls within the first projection.Type: GrantFiled: June 3, 2021Date of Patent: March 12, 2024Assignee: INNOLUX CORPORATIONInventors: I-Kai Pan, Su-Chen Yen, Ying-Chieh Tsai
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Patent number: 11929322Abstract: Device, package structure and method of forming the same are disclosed. The device includes a die encapsulated by an encapsulant, a conductive structure aside the die, and a dielectric layer overlying the conductive structure. The conductive structure includes a through via in the encapsulant, a redistribution line layer overlying the through via, and a seed layer overlying the redistribution line layer. The dielectric layer includes an opening, wherein the opening exposes a surface of the conductive structure, the opening has a scallop sidewall, and an included angle between a bottom surface of the dielectric layer and a sidewall of the opening is larger than about 60 degrees.Type: GrantFiled: July 25, 2022Date of Patent: March 12, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hsien-Wei Chen, An-Jhih Su, Li-Hsien Huang
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Publication number: 20240076417Abstract: The present disclosure provides a method for manufacturing an auto-crosslinked hyaluronic acid gel, comprising conducting auto-crosslinking reaction of a colloid containing hyaluronic acid continuously at low temperature in an acidic environment, and treating the reaction product with steam at high temperature to obtain the auto-crosslinked hyaluronic acid gel with high viscosity.Type: ApplicationFiled: September 5, 2023Publication date: March 7, 2024Applicant: SCIVISION BIOTECH INC.Inventors: TAI-SHIEN HAN, TSUNG-WEI PAN, TOR-CHERN CHEN, CHUN-CHANG CHEN, PO-HSUAN LIN, LI-SU CHEN
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Publication number: 20240079461Abstract: A semiconductor structure including a fin of a vertical transistor structure, a top source drain region on a top side of the fin, a bottom source drain region on a bottom side of the fin, and a backside contact below and contacting the bottom source drain region.Type: ApplicationFiled: September 1, 2022Publication date: March 7, 2024Inventors: Brent A. Anderson, Su Chen Fan, Jay William Strane, Ruilong Xie