Abstract: Provided is a virtual sensor system for a digital twin application. The virtual sensor system includes an edge gateway configured to collect data collected from physical sensors in the real world, apply the collected data to a virtual sensor model, and operate virtual sensors for configuring a digital twin world, and a virtual sensor framework configured to train the virtual sensor model using data, which is measured by the physical sensors, from the edge gateway and distribute the virtual sensor model to the edge gateway.

Abstract: Provided is a compound of Chemical Formula 1: wherein: X1 to X6 are each independently CH or N, provided that at least one of X1 to X6 is N; Ar1 to Ar4 are each independently a substituted or unsubstituted: C6-60 aryl or C2-60 heteroaryl containing one or more of N, O, and S, provided that at least one of Ar1 to Ar4 is any one of: R2 is hydrogen, deuterium, or a substituted or unsubstituted: C6-60 aryl or C2-60 heteroaryl containing one or more of N, O and S; each R3 is independently hydrogen, deuterium, or a substituted or unsubstituted: C6-60 aryl or C2-60 heteroaryl containing one or more of N, O, and S; each R1 is independently hydrogen, deuterium, or a substituted or unsubstituted: C6-60 aryl or C2-60 heteroaryl containing one or more of N, O and S; and n is an integer of 0 to 8, and organic light emitting devices including the same.

Abstract: The present disclosure provides a novel compound represented by the following Chemical Formula 1, and an organic light emitting device including the same. The compound is used as a material of an organic material layer of the organic light emitting device.

Abstract: A heterocyclic compound represented by Chemical Formula 1 and an organic light emitting device comprising the same, and the heterocyclic compound providing improved efficiency, low driving voltage, and improved lifetime characteristics of the organic light emitting device.

Abstract: Provided is a novel compound of Chemical Formula 1: where Y is O or S; D is deuterium, L is a single bond, substituted or unsubstituted C6-60 arylene, or substituted or unsubstituted C2-60 heteroarylene containing at least one of N, O and S; L1 and L2 are each independently a single bond or substituted or unsubstituted C6-60 arylene; Ar1 and Ar2 are each independently substituted or unsubstituted C6-60 aryl or substituted or unsubstituted C2-60 heteroaryl containing at least one of N, O and S; and R is hydrogen or C6-60 aryl that is unsubstituted or substituted with deuterium and an organic light-emitting device including the same. An organic light-emitting device containing the compound of Chemical Formula 1 as a host material of the light emitting layer exhibits significantly improved lifespan without a decrease in efficiency.

Abstract: An augmented reality providing apparatus is provided. The augmented reality providing apparatus includes a lens including a first lens portion including a first reflective member, and a second lens portion including a second reflective member, and a display device on one side of the lens for displaying first and second images, wherein the first reflective member reflects the first image at a first angle, and the second reflective member reflects the second image at a second angle that is different from the first angle.

Abstract: Provided is compound of Chemical Formula 1: wherein: each X1 is independently N or CH, provided that at least one of them is N; each X2 is independently N or CH, provided that at least one of them is N; Ar1 to Ar4 are each independently a substituted or unsubstituted C6-60 aryl or a substituted or unsubstituted C5-60 heteroaryl containing one or more of N, O, and S; Ar5 is a substituted or unsubstituted C6-60 aryl or a substituted or unsubstituted C5-60 heteroaryl containing one or more of N, O, and S; each R1 is independently hydrogen, deuterium, a substituted or unsubstituted C1-60 alkyl, a substituted or unsubstituted C3-60 cycloalkyl, a substituted or unsubstituted C6-60 aryl, or a substituted or unsubstituted C5-60 heteroaryl containing one or more of N, O, and S; and n is an integer of 0 to 4, and an organic light emitting device including the same.

Abstract: An integrated circuit device includes a substrate having source and drain recesses therein that are lined with respective silicon-germanium liners and filled with doped semiconductor source and drain regions. A stacked plurality of semiconductor channel layers are provided, which are separated vertically from each other within the substrate by corresponding buried insulated gate electrode regions that extend laterally between the silicon-germanium liners. An insulated gate electrode is provided on an uppermost one of the plurality of semiconductor channel layers. The silicon-germanium liners may be doped with carbon.

Abstract: A semiconductor device is provided. The semiconductor comprises an active pattern including a lower pattern and a plurality of sheet patterns that are spaced apart from the lower pattern in a first direction, a source/drain pattern on the lower pattern and in contact with the plurality of sheet patterns, and a gate structure on opposing sides of the source/drain pattern in a second direction different from the first direction, the gate structure including a gate electrode on the plurality of sheet patterns, wherein the source/drain pattern includes an epitaxial region that comprises a semiconductor material and a cavity region that is inside the epitaxial region and that is surrounded by the semiconductor material.

Abstract: A semiconductor device including an active region extending in a first direction on a substrate; a gate structure intersecting the active region and extending in a second direction on the substrate; and a source/drain region on the active region and at least one side of the gate structure, wherein the source/drain region includes a plurality of first epitaxial layers spaced apart from each other in the first direction, the plurality of first epitaxial layers including first impurities of a first conductivity type; and a second epitaxial layer filling a space between the plurality of first epitaxial layers, the second epitaxial layer including second impurities of the first conductivity type.

Abstract: A semiconductor device having improved performance and reliability. The semiconductor device may include a lower pattern extending in a first direction, and a plurality of sheet patterns spaced apart from the lower pattern in a second direction perpendicular to the first direction. A plurality of gate structures may be on the lower pattern and spaced apart in the first direction, and a source/drain pattern, which may include a semiconductor liner film and a semiconductor filling film on the semiconductor liner film. A liner recess that is defined by an inner surface of the semiconductor liner film may include a plurality of width extension regions, and a width of each width extension region in the first direction may increase and then decreases, as a distance increases in the second direction from an upper surface of the lower pattern.

Abstract: A semiconductor device is provided. The semiconductor comprises an active pattern including a lower pattern and a plurality of sheet patterns that are spaced apart from the lower pattern in a first direction, a source/drain pattern on the lower pattern and in contact with the plurality of sheet patterns, and a gate structure on opposing sides of the source/drain pattern in a second direction different from the first direction, the gate structure including a gate electrode on the plurality of sheet patterns, wherein the source/drain pattern includes an epitaxial region that comprises a semiconductor material and a cavity region that is inside the epitaxial region and that is surrounded by the semiconductor material.

Abstract: A semiconductor device includes a substrate; an active pattern disposed on the substrate and extending in a first direction; a plurality of gate structures, wherein the plurality of gate structures is disposed on the active pattern and arranged in the first direction, wherein each of the plurality of gate structures includes a gate electrode and a gate insulating film, and wherein the gate electrode extends in a second direction; a source/drain pattern disposed between adjacent gate structures of the plurality of gate structures; a source/drain contact connected to the source/drain pattern; and a contact silicide film disposed between the source/drain pattern and the source/drain contact, wherein the contact silicide film includes a bowl region that wraps a lower portion of the source/drain contact, and a protruding region that protrudes from the bowl region of the contact silicide film.

Abstract: A semiconductor device includes an active region extending in a first direction on a substrate, channel layers on the active region and spaced apart vertically, a gate structure intersecting the active region and the channel layers, the gate structure extending in a second direction and surrounding the channel layers, and a source/drain region on the active region at a side of the gate structure, the source/drain region contacting the channel layers, the source/drain region including first epitaxial layers having a first composition and including first layers on side surfaces of the channel layers and a second layer on the active region at a lower end of the source/drain region, and a second epitaxial layer having a second composition different from the first composition, the second epitaxial layer being between the first epitaxial layers in the first direction and being between the first epitaxial layers vertically in a third direction.

Abstract: A semiconductor device includes an active region extending in a first direction on a substrate, channel layers on the active region and spaced apart vertically, a gate structure intersecting the active region and the channel layers, the gate structure extending in a second direction and surrounding the channel layers, and a source/drain region on the active region at a side of the gate structure, the source/drain region contacting the channel layers, the source/drain region including first epitaxial layers having a first composition and including first layers on side surfaces of the channel layers and a second layer on the active region at a lower end of the source/drain region, and a second epitaxial layer having a second composition different from the first composition, the second epitaxial layer being between the first epitaxial layers in the first direction and being between the first epitaxial layers vertically in a third direction.

Abstract: A semiconductor device including an active region defined in a substrate; at least one channel layer on the active region; a gate electrode intersecting the active region and on the active region and surrounding the at least one channel layer; and a pair of source/drain regions adjacent to both sides of the gate electrode, on the active region, and in contact with the at least one channel layer, wherein the pair of source/drain regions includes a selective epitaxial growth (SEG) layer, and a maximum width of each of the pair of source/drain regions in a first direction is 1.3 times or less a width of the active region in the first direction.

Abstract: A semiconductor device may include a first active fin, a plurality of second active fins, a first source/drain layer structure, and a second source/drain layer structure. The first active fin may be on a first region of a substrate. The second active fins may be on a second region of the substrate. The first and second gate structures may be on the first and second active fins, respectively. The first source/drain layer structure may be on a portion of the first active fin that is adjacent to the first gate structure. The second source/drain layer structure may commonly contact upper surfaces of the second active fins adjacent to the second gate structure. A top surface of the second source/drain layer structure may be further from the surface of the substrate than a top surface of the first source/drain layer structure is to the surface of the substrate.

Abstract: A semiconductor device is provided.

Abstract: A semiconductor device may include a first active fin, a plurality of second active fins, a first source/drain layer structure, and a second source/drain layer structure. The first active fin may be on a first region of a substrate. The second active fins may be on a second region of the substrate. The first and second gate structures may be on the first and second active fins, respectively. The first source/drain layer structure may be on a portion of the first active fin that is adjacent to the first gate structure. The second source/drain layer structure may commonly contact upper surfaces of the second active fins adjacent to the second gate structure. A top surface of the second source/drain layer structure may be further from the surface of the substrate than a top surface of the first source/drain layer structure is to the surface of the substrate.

Abstract: A display device includes a display panel and a signal transmission film including a first extension portion, a second extension portion, and a first dummy pattern. The signal transmission film is connected to one side of the display panel. The first extension portion extends in a first direction, and a first contact hole is formed at a first side of the first extension portion. The second extension portion extends from the first side of the first extension portion in a second direction which is different from the first direction. The first dummy pattern is disposed adjacent to the first contact hole at the first side.