Abstract: A virtual private network (VPN) client for cellular mobile devices is described. The VPN network client processes network packets for securely tunneling the network packets between the cellular mobile device and the remote VPN security device. Upon establishing the VPN connection, the VPN network client receives a web-based home page from the secure VPN device via a secure response, dynamically parses bookmark links from the secure response and renders a bookmark window using input controls native to the cellular mobile device without invoking a web browser on the cellular mobile device. Each of the input controls corresponds to a different one of the bookmarks parsed from the secure response. Upon selection of one of the input controls, the VPN network client formulates and outputs an appropriate request to the secure VPN device as if a corresponding one of the bookmark links were selected by the user.

Abstract: An integrated, multi-service network client for cellular mobile devices is described. The multi-service network client can be deployed as a single software package on cellular mobile network devices to provide integrated services including secure enterprise virtual private network (VPN) connectivity, acceleration, security management including monitored and enforced endpoint compliance, and collaboration services. Once installed on the cellular mobile device, the multi-service client integrates with an operating system of the device to provide a single entry point for user authentication for secure enterprise connectivity, endpoint security services including endpoint compliance with respect to anti-virus and spyware software, and comprehensive integrity checks.

Abstract: A process for purification of fluids, for example, desalination of seawater or brackish water, using organic solutes in a concentrated water solution for use in a forward osmosis process, to extract fresh water out of salt water through the forward osmosis membrane, and subsequently separating the organic solutes out of the diluted forward osmosis permeate by cloud point extraction, thereby regenerating a concentrated organic solution for recycling to the forward osmosis process, and fresh water for potable water use.

Abstract: A method of forming a bonded wafer structure includes providing a first semiconductor wafer substrate having a first silicon oxide layer at the top surface of the first semiconductor wafer substrate; providing a second semiconductor wafer substrate; forming a second silicon oxide layer on the second semiconductor wafer substrate; forming a silicon nitride layer on the second silicon oxide layer; and bringing the first silicon oxide layer of the first semiconductor wafer substrate into physical contact with the silicon nitride layer of the second semiconductor wafer substrate to form a bonded interface between the first silicon oxide layer and the silicon nitride layer. Alternatively, a third silicon oxide layer may be formed on the silicon nitride layer before bonding. A bonded interface is then formed between the first and third silicon oxide layers. A bonded wafer structure formed by such a method is also provided.

Abstract: The present invention discloses stable, solid oral pharmaceutical composition comprising Lanthanum carbonate having more than 6 molecules of water per molecule of lanthanum carbonate and pharmaceutically acceptable carriers or diluents, wherein said carrier or diluent excludes monosaccharide/s or disaccharide/s, such that the composition has comparable in-vitro dissolution profile similar to that of FOSRENOL®. Also disclosed is a wet granulation process for making the same.

Abstract: Nanoscale lithium compositions are disclosed which are suitable for use in electrochemical applications such as electrodes and batteries. The compositions can include nanoparticles having lithium metal and/or lithium alloy cores. A shell material is contemplated comprising lithium nitride or another material that conducts lithium ions. Methods of preparing lithium compositions and methods of preparing electrodes comprising lithium compositions are further disclosed. The crystal structure of the nanoscale lithium compositions is preferably body centered cubic, allowing low volume expansion and high diffusivity of lithium from or into the core structures during discharge and charge processes, respectively.

Abstract: A process for purification of fluids, for example, desalination of seawater or brackish water, using organic solutes in a concentrated water solution for use in a forward osmosis process, to extract fresh water out of salt water through the forward osmosis membrane, and subsequently separating the organic solutes out of the diluted forward osmosis permeate by cloud point extraction, thereby regenerating a concentrated organic solution for recycling to the forward osmosis process, and fresh water for potable water use.

Abstract: A cartridge comprises a housing that can be easily attached and detached from an electrolyzer so that the hydrogen generated can be stored within the cartridge. The housing is further configured to easily attach and detach from a fuel cell so that the stored hydrogen can be released to the fuel cell for power generation. In preferred embodiments, the cartridge comprises a cathode that serves to generate hydrogen when joined to the electrolyzer, as well as to store hydrogen. With this arrangement, a single device (the fuel cell cartridge) can function to generate hydrogen when connected to form part of the electrolyzer, to store hydrogen (whether attached to either the fuel cell or electrolyzer or neither—in stand alone form), and/or to supply hydrogen to the fuel cell, when connected thereto.

Abstract: A programmable device (eFuse), includes: a substrate (10); an insulator (13) on the substrate; an elongated semiconductor material (12) on the insulator, the elongated semiconductor material having a first end (12a), a second end (12b), a fuse link (11) between the ends, and an upper surface S. The semiconductor material includes a dopant having a concentration of at least 10*17/cc. The first end (12a) is wider than the second end (12b), and a metallic material is disposed on the upper surface. The metallic material is physically migratable along the upper surface responsive to an electrical current I flowable through the semiconductor material and through the metallic material.

Abstract: A programmable device (eFuse), includes: a substrate (10); an insulator (13) on the substrate; an elongated semiconductor material (12) on the insulator, the elongated semiconductor material having a first end (12a), a second end (12b), a fuse link (11) between the ends, and an upper surface S. The semiconductor material includes a dopant having a concentration of at least 10*17/cc. The first end (12a) is wider than the second end (12b), and a metallic material is disposed on the upper surface. The metallic material is physically migratable along the upper surface responsive to an electrical current I flowable through the semiconductor material and through the metallic material.

Abstract: The present invention provides antifuse structures having an integrated heating element and methods of programming the same, the antifuse structures comprising first and second conductors and a dielectric layer formed between the conductors, where one or both of the conductors functions as both a conventional antifuse conductor and as a heating element for directly heating the antifuse dielectric layer during programming.

Abstract: The present invention provides antifuse structures having an integrated heating element and methods of programming the same, the antifuse structures comprising first and second conductors and a dielectric layer formed between the conductors, where one or both of the conductors functions as both a conventional antifuse conductor and as a heating element for directly heating the antifuse dielectric layer during programming.

Abstract: The present invention relates to a method of fabrication process which integrates the processing steps for fabricating the trench MIM capacitor with the conventional middle-of-line processing steps for fabricating metal contacts, so that the inner metallic electrode layer of the trench MIM capacitor and the metal contact of the FET or other logic circuitry components are formed by a single middle-of-line processing step and comprise essentially the same metallic material. The semiconductor device contains at least one trench metal-oxide-metal (MIM) capacitor and at least one other logic circuitry component, preferably at least one field effect transistor (FET). The trench MIM capacitor is located in a trench in a substrate and comprises inner and outer metallic electrode layers with a dielectric layer therebetween. The FET comprises a source region, a drain region, a channel region, and at least one metal contact connected with the source or drain region.

Abstract: An apparatus and method for providing a reprogrammable electrically programmable fuse (eFuse) are provided. With the apparatus and method, a pair of eFuses are provided coupled to programming current sources and sensing current sources. When the pair of eFuses is to be programmed, a first programming current is applied to a first eFuse to thereby increase the resistance of the first eFuse by an incremental amount. When the pair of eFuses is to be returned to an unprogrammed state, a second programming current source is applied to a second eFuse to thereby increase a resistance of the second eFuse to be greater than the resistance of the first eFuse. When the sensing current is applied to the eFuses, a difference in the resulting voltages across the eFuses is identified and used to indicate whether the reprogrammable eFuse is in a programmed state or unprogrammed state.

Abstract: An apparatus and method for providing a reprogrammable electrically programmable fuse (eFuse) are provided. With the apparatus and method, a pair of eFuses are provided coupled to programming current sources and sensing current sources. When the pair of eFuses is to be programmed, a first programming current is applied to a first eFuse to thereby increase the resistance of the first eFuse by an incremental amount. When the pair of eFuses is to be returned to an unprogrammed state, a second programming current source is applied to a second eFuse to thereby increase a resistance of the second eFuse to be greater than the resistance of the first eFuse. When the sensing current is applied to the eFuses, a difference in the resulting voltages across the eFuses is identified and used to indicate whether the reprogrammable eFuse is in a programmed state or unprogrammed state.

Abstract: The present invention relates to a semiconductor device that contains a trench metal-insulator-metal (MIM) capacitor and a field effect transistor (FET). The trench MIM capacitor comprises a first metallic electrode layer located over interior walls of a trench in a substrate, a dielectric layer located in the trench over the first metallic electrode layer, and a second metallic electrode layer located in the trench over the dielectric layer. The FET comprises a source region, a drain region, a channel region between the source and drain regions, and a gate electrode over the channel region. The trench MIM capacitor is connected to the FET by a metallic strap. The semiconductor device of the present invention can be fabricated by a process in which the trench MIM capacitor is formed after the FET source/drain region but before the FET source/drain metal silicide contacts, for minimizing metal contamination in the FET.

Abstract: The present invention relates to a semiconductor device that contains at least one trench metal-oxide-metal (MIM) capacitor and at least one other logic circuitry component, preferably at least one field effect transistor (FET). The trench MIM capacitor is located in a trench in a substrate and comprises inner and outer metallic electrode layers with a dielectric layer therebetween. The FET comprises a source region, a drain region, a channel region, and at least one metal contact connected with the source or drain region. The present invention also relates to a fabrication process, which integrates the processing steps for fabricating the trench MIM capacitor with the conventional middle-of-line processing steps for fabricating metal contacts, so that the inner metallic electrode layer of the trench MIM capacitor and the metal contact of the FET or other logic circuitry components are formed by a single middle-of-line processing step and comprise essentially the same metallic material.

Abstract: A secure device for electronic voting is employs a write-once vote-recording cartridge, preferably based on an e-fuse array. The cartridge has two distinct modes of operation: write mode and read mode. When in write mode, the array can only be written—it cannot be read. When in read mode, the array can only be read—it cannot be written. The array starts out in write mode. When switched to read mode, it cannot be switched back. A hardware mechanism provides successful write confirmation. The e-fuse array is installed (like a cartridge) into a vote-recording device. The voting device has an encryption/authorization mechanism that combines polling parameters (entered by the polling authority) with user (voter) information (Voter ID confirmation, poll selections, etc.) to produce a “fuse string” to be written into the e-fuse array. Upon completion of each vote, the fuse string from is written to the array, with hardware confirmation of successful writing.

Abstract: The present invention provides electrically-programmable fuse structures having radiation inhibitive properties for preventing non-destructive security breaches by radiation imaging techniques such as X-ray imaging, without adversely effecting fuse programmability, and methods of designing the same.

Abstract: The present invention provides a dense semiconductor fuse array having common cathodes. The dense semiconductor fuse array of the present invention occupies less area than conventional semiconductor fuse arrays, can comprise integrated diodic components, and can require only one metal wiring layer for making electrical connections to the fuse array.