Abstract: A process includes depositing an edge fill dielectric over a first workpiece and a device disposed thereon. The edge fill dielectric is patterned so that only the edge portions remain. A second dielectric material is formed over the first workpiece, device, and edge fill dielectric. A planarization process levels the second dielectric material and the device. A bonding layer is formed thereon and a second workpiece bonded thereto by a dielectric-to-dielectric bond.

Abstract: A method includes bonding a first semiconductor die and a second semiconductor die to a substrate, where a gap is disposed between a first sidewall of the first semiconductor die and a second sidewall of the second semiconductor die, performing a plasma treatment to dope top surfaces and sidewalls of each of the first semiconductor die and the second semiconductor die with a first dopant, where a concentration of the first dopant in the first sidewall decreases in a vertical direction from a top surface of the first semiconductor die towards a bottom surface of the first semiconductor die, and a concentration of the first dopant in the second sidewall decreases in a vertical direction from a top surface of the second semiconductor die towards a bottom surface of the second semiconductor die, and filling the gap with a spin-on dielectric material.

Abstract: A package structure is provided. The package structure includes a first interconnect structure over a first substrate. The package structure also includes a second interconnect structure below a second substrate. The package structure further includes a bonding structure between the first interconnect structure and the second interconnect structure. The bonding structure comprises a first intermetallic compound (IMC) and a second intermetallic compound (IMC). In addition, the package structure includes a first seed layer below the bonding structure. The package structure also includes a second seed layer over the second IMC. Opposite sidewalls of the second seed layer are covered by the second IMC.

Abstract: A method of forming a semiconductor structure is provided, and includes trimming a first substrate to form a recess on a sidewall of the first substrate. A conductive structure is formed in the first substrate. The method includes bonding the first substrate to a carrier. The method includes thinning down the first substrate. The method also includes forming a dielectric material in the recess and over a top surface of the thinned first substrate. The method further includes performing a planarization process to remove the dielectric material and expose the conductive structure over the top surface. In addition, the method includes removing the carrier from the first substrate.

Abstract: A method of a semiconductor-on-insulator structure includes the following steps. A semiconductor donor substrate is provided. A first implantation process is performed to form an exfoliation layer of the semiconductor donor substrate with a first ion concentration. A second implantation process is performed on a perimeter region of the exfoliation layer to form a high concentration region of the exfoliation layer with a second ion concentration higher than the first ion concentration. The semiconductor donor substrate is bonded to a semiconductor handle substrate, so that the exfoliation layer with the high concentration region is bonded to the semiconductor handle substrate. An annealing process is performed to separate the exfoliation layer from the rest of the semiconductor donor substrate.

Abstract: A method includes bonding a first semiconductor die and a second semiconductor die to a substrate, where a gap is disposed between a first sidewall of the first semiconductor die and a second sidewall of the second semiconductor die, performing a plasma treatment to dope top surfaces and sidewalls of each of the first semiconductor die and the second semiconductor die with a first dopant, where a concentration of the first dopant in the first sidewall decreases in a vertical direction from a top surface of the first semiconductor die towards a bottom surface of the first semiconductor die, and a concentration of the first dopant in the second sidewall decreases in a vertical direction from a top surface of the second semiconductor die towards a bottom surface of the second semiconductor die, and filling the gap with a spin-on dielectric material.

Abstract: A package structure is provided. The package structure includes a first interconnect structure formed over a first substrate. The package structure also includes a second interconnect structure formed below a second substrate. The package structure further includes a bonding structure between the first interconnect structure and the second interconnect structure. In addition, the bonding structure includes a first intermetallic compound (IMC) and a second intermetallic compound (IMC). The bonding structure also includes an underfill layer surrounding the bonding structure. A width of the first IMC is greater than a width of the second IMC, and the underfill layer covers a sidewall of the first IMC and a sidewall of the second IMC.

Abstract: A semiconductor package and methods of forming the same are provided. The methods may include implanting a substrate with a dopant to form an implanted layer in the substrate, thinning the substrate, and heating the substrate to split the substrate at the implanted layer into a first portion and a second portion.

Abstract: In an embodiment, a method includes bonding a first surface of a first substrate to a second substrate using thermo-compression bonding (TCB) to form a wafer, where the first substrate includes lithium niobate, and the second substrate includes silicon, performing a first annealing process on the wafer at a first temperature, performing a planarization process on a second surface of the first substrate, where the second surface is on an opposite side of the first substrate as the first surface; and performing a second annealing process on the wafer at a second temperature, where the second temperature is greater than the first temperature.

Abstract: A chip package structure is provided. The chip package structure includes a first redistribution layer having a first bonding portion and a chip structure bonded to the first bonding portion. A first width of the first bonding portion is substantially equal to a second width of the chip structure, and the chip structure includes a semiconductor substrate. The chip package structure also includes a second redistribution layer connected between the semiconductor substrate and the first bonding portion. The second redistribution layer has a second bonding portion and a first portion between the second bonding portion and the semiconductor substrate. The second bonding portion is connected to the first bonding portion. The first portion has a first sidewall and a second sidewall opposite to the first sidewall, and the second bonding portion is between the first sidewall and the second sidewall.

Abstract: A method includes picking up a first package component, removing an oxide layer on an electrical connector of the first package component, placing the first package component on a second package component after the oxide layer is removed, and bonding the first package component to the second package component.

Abstract: A chip package structure is provided. The chip package structure includes a first redistribution layer having a bonding portion. The bonding portion includes a dielectric layer. The chip package structure includes a chip structure bonded to the bonding portion. A first width of the dielectric layer of the bonding portion is substantially equal to a second width of the chip structure. The chip package structure includes a protective layer over the first redistribution layer and surrounding the chip structure. A portion of the protective layer extends into the first redistribution layer and surrounds the bonding portion.

Abstract: A method includes picking up a first package component, removing an oxide layer on an electrical connector of the first package component, placing the first package component on a second package component after the oxide layer is removed, and bonding the first package component to the second package component.

Abstract: In an embodiment, a method includes: depositing a waveguide cladding layer over a substrate, the substrate having a center portion in a cross-sectional view and an edge portion adjacent the center portion in the cross-sectional view; reshaping the waveguide cladding layer to form a bevel profile in the waveguide cladding layer over the edge portion of the substrate; forming a recess in the waveguide cladding layer; depositing a waveguide core layer in the recess and over the waveguide cladding layer, the waveguide core layer extending along the bevel profile of the waveguide cladding layer; and planarizing the waveguide core layer and the waveguide cladding layer to form a waveguide core, the waveguide core including a portion of the waveguide core layer in the recess.

Abstract: A die stacking structure, a semiconductor package and a method for forming the die stacking structure are provided. The die stacking structure includes a first device die; second device dies, bonded onto the first device die, and arranged side-by-side; and a stack of dielectric layers, extending in between the second device dies, and laterally enclosing each of the second device dies. The dielectric layers are respectively formed of a spin-on-glass (SOG) or a polymer, and a lower one of the dielectric layers has a thickness greater than a thickness of another one of the dielectric layers at a higher level.

Abstract: Optical devices and methods of manufacturing the optical devices are provided. In an embodiment, an optical device includes a first insulating layer over a substrate and a first waveguide in the first insulating layer. The first waveguide includes a first major portion and a first bent portion extending upwardly from the first major portion away from the substrate. The optical device also includes a second waveguide over the first waveguide, and the second waveguide includes a second major portion over the first insulating layer and a second bent portion extending downwardly from the second major portion and into the first insulating layer.

Abstract: A method of a semiconductor-on-insulator structure includes the following steps. A semiconductor donor substrate is provided. A first implantation process is performed to form an exfoliation layer of the semiconductor donor substrate with a first ion concentration. A second implantation process is performed on a perimeter region of the exfoliation layer to form a high concentration region of the exfoliation layer with a second ion concentration higher than the first ion concentration. The semiconductor donor substrate is bonded to a semiconductor handle substrate, so that the exfoliation layer with the high concentration region is bonded to the semiconductor handle substrate. An annealing process is performed to separate the exfoliation layer from the rest of the semiconductor donor substrate.

Abstract: Optical devices and methods of manufacture are presented in which a non-linear material is deposited or otherwise placed. Once the non-linear material has been deposited, implantation regions are formed within the non-linear material using an implantation process. The implantation regions are removed using an etching process, and electrodes are formed to the remaining material.

Abstract: A method includes bonding a first semiconductor die and a second semiconductor die to a substrate, where a gap is disposed between a first sidewall of the first semiconductor die and a second sidewall of the second semiconductor die, performing a plasma treatment to dope top surfaces and sidewalls of each of the first semiconductor die and the second semiconductor die with a first dopant, where a concentration of the first dopant in the first sidewall decreases in a vertical direction from a top surface of the first semiconductor die towards a bottom surface of the first semiconductor die, and a concentration of the first dopant in the second sidewall decreases in a vertical direction from a top surface of the second semiconductor die towards a bottom surface of the second semiconductor die, and filling the gap with a spin-on dielectric material.

Abstract: A manufacturing method of a semiconductor device includes the following steps. An electrical insulating and thermal conductive layer is formed over a semiconductor substrate. A dielectric structure is formed over the electrical insulating and thermal conductive layer, wherein a thermal conductivity of the electrical insulating and thermal conductive layer is substantially greater than a thermal conductivity of the dielectric structure. An opening is formed in the dielectric structure, wherein the opening extending through the dielectric structure and the electrical insulating and thermal conductive layer. A circuit layer is formed in the dielectric structure, wherein the circuit layer fills the opening.