Patents by Inventor Sudhama C. Shastri

Sudhama C. Shastri has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SEMICONDUCTOR COMPONENT HAVING AN ESD PROTECTION DEVICE
    Publication number: 20180374931
    Abstract: A semiconductor component and a method for manufacturing the semiconductor component, wherein the semiconductor component includes a transient voltage suppression structure that includes at least two diodes and a Zener diode. In accordance with embodiments, a semiconductor material is provided that includes an epitaxial layer. The at least two diodes and the Zener diode are created at the surface of the epitaxial layer, where the at least two diodes may be adjacent to the Zener diode.
    Type: Application
    Filed: August 14, 2018
    Publication date: December 27, 2018
    Applicant: Semiconductor Components Industries, LLC
    Inventors: Umesh SHARMA, Harry Yue GEE, Der Min LIOU, David D. MARREIRO, Sudhama C. SHASTRI
  • Method for manufacturing a semiconductor device
    Patent number: 10109718
    Abstract: A semiconductor component and a method for manufacturing the semiconductor component, wherein the semiconductor component includes a transient voltage suppression structure that includes at least two diodes and a Zener diode. In accordance with embodiments, a semiconductor material is provided that includes an epitaxial layer. The at least two diodes and the Zener diode are created at the surface of the epitaxial layer, where the at least two diodes may be adjacent to the Zener diode.
    Type: Grant
    Filed: May 1, 2014
    Date of Patent: October 23, 2018
    Assignee: Semiconductor Components Industries, LLC
    Inventors: Umesh Sharma, Harry Yue Gee, Der Min Liou, David D Marreiro, Sudhama C Shastri
  • Method of forming a semiconductor device and structure therefor
    Patent number: 9646951
    Abstract: In one embodiment, a conductor bump is formed on an under bump conductor of a semiconductor device to extend a first distance away from a surface of the under bump conductor including forming a protective layer on an outer surface of the conductor bump wherein the plurality of semiconductor dies are subsequently singulated by etching through the semiconductor substrate with an etchant and wherein the protective layer protects the conductor bump from the etchant.
    Type: Grant
    Filed: December 10, 2013
    Date of Patent: May 9, 2017
    Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Richard D. Moyers, Sudhama C. Shastri
  • Method of manufacturing a semiconductor component and structure
    Patent number: 9419069
    Abstract: A semiconductor component and methods for manufacturing the semiconductor component that includes a three dimensional helically shaped common mode choke. In accordance with embodiments, a transient voltage suppression device may be coupled to the monolithically integrated common mode choke.
    Type: Grant
    Filed: June 27, 2014
    Date of Patent: August 16, 2016
    Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Phillip Holland, Rong Liu, Umesh Sharma, David D Marreiro, Der Min Liou, Sudhama C Shastri
  • METHOD OF FORMING A SEMICONDUCTOR DEVICE AND STRUCTURE THEREFOR
    Publication number: 20150162305
    Abstract: In one embodiment, a conductor bump is formed on an under bump conductor of a semiconductor device to extend a first distance away from a surface of the under bump conductor including forming a protective layer on an outer surface of the conductor bump wherein the plurality of semiconductor dies are subsequently singulated by etching through the semiconductor substrate with an etchant and wherein the protective layer protects the conductor bump from the etchant.
    Type: Application
    Filed: December 10, 2013
    Publication date: June 11, 2015
    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Richard D. Moyers, Sudhama C. Shastri
  • Semiconductor component and method
    Patent number: 9041294
    Abstract: A semiconductor component and a method for manufacturing the semiconductor component, wherein the semiconductor component includes one or more transient voltage suppression structures. In an embodiment, the semiconductor component may include an over-voltage detection circuit, an over-current detection circuit, an over-temperature detection circuit, an ESD protection circuit, or combinations of these circuits.
    Type: Grant
    Filed: September 27, 2010
    Date of Patent: May 26, 2015
    Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: David D. Marreiro, Sudhama C. Shastri, Stefan Gueorguiev
  • Method for manufacturing a semiconductor component that includes a common mode choke and structure
    Patent number: 8999807
    Abstract: A semiconductor component and methods for manufacturing the semiconductor component that includes a monolithically integrated common mode choke. In accordance with embodiments, a transient voltage suppression device may be coupled to the monolithically integrated common mode choke.
    Type: Grant
    Filed: May 27, 2010
    Date of Patent: April 7, 2015
    Assignee: Semiconductor Components Industries, LLC
    Inventors: Li Jiang, Ryan J. Hurley, Sudhama C. Shastri, Yenting Wen, Wang-Chang Albert Gu, Phillip Holland, Der Min Liou, Rong Liu, Wenjiang Zeng
  • METHOD OF MANUFACTURING A SEMICONDUCTOR COMPONENT AND STRUCTURE
    Publication number: 20140308795
    Abstract: A semiconductor component and methods for manufacturing the semiconductor component that includes a three dimensional helically shaped common mode choke. In accordance with embodiments, a transient voltage suppression device may be coupled to the monolithically integrated common mode choke.
    Type: Application
    Filed: June 27, 2014
    Publication date: October 16, 2014
    Inventors: Phillip Holland, Rong Liu, Umesh Sharma, David D Marreiro, Der Min Liou, Sudhama C. Shastri
  • METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
    Publication number: 20140242771
    Abstract: A semiconductor component and a method for manufacturing the semiconductor component, wherein the semiconductor component includes a transient voltage suppression structure that includes at least two diodes and a Zener diode. In accordance with embodiments, a semiconductor material is provided that includes an epitaxial layer. The at least two diodes and the Zener diode are created at the surface of the epitaxial layer, where the at least two diodes may be adjacent to the Zener diode.
    Type: Application
    Filed: May 1, 2014
    Publication date: August 28, 2014
    Applicant: Semiconductor Components Industries, LLC
    Inventors: Umesh Sharma, Harry Yue Gee, Der Min Liou, David D Marreiro, Sudhama C Shastri
  • Method of manufacturing a semiconductor component and structure
    Patent number: 8766401
    Abstract: A semiconductor component and methods for manufacturing the semiconductor component that includes a three dimensional helically shaped common mode choke. In accordance with embodiments, a transient voltage suppression device may be coupled to the monolithically integrated common mode choke.
    Type: Grant
    Filed: October 1, 2010
    Date of Patent: July 1, 2014
    Assignee: Semiconductor Components Industries, LLC
    Inventors: Phillip Holland, Rong Liu, Umesh Sharma, Der Min Liou, David D. Marreiro, Sudhama C. Shastri
  • Electrostatic discharge devices and method of making the same
    Patent number: 8723264
    Abstract: In one embodiment, electrostatic discharge (ESD) devices are disclosed.
    Type: Grant
    Filed: October 17, 2012
    Date of Patent: May 13, 2014
    Assignee: Semicondutor Components Industries, LLC
    Inventors: David D. Marreiro, Steven M. Etter, Sudhama C. Shastri
  • ELECTROSTATIC DISCHARGE DEVICES AND METHOD OF MAKING THE SAME
    Publication number: 20140103484
    Abstract: In one embodiment, electrostatic discharge (ESD) devices are disclosed.
    Type: Application
    Filed: October 17, 2012
    Publication date: April 17, 2014
    Inventors: David D. Marreiro, Steven M. Etter, Sudhama C. Shastri
  • Method of manufacturing a semiconductor component and structure
    Patent number: 8410578
    Abstract: A semiconductor component and methods for manufacturing the semiconductor component that includes a monolithically integrated passive device. In accordance with embodiments, the monolithically integrated passive device includes an inductor formed from damascene structures.
    Type: Grant
    Filed: December 7, 2010
    Date of Patent: April 2, 2013
    Assignee: Semiconductor Components Industries, LLC
    Inventors: Sallie Hose, Peter A. Burke, Li Jiang, Sudhama C. Shastri
  • Low clamp voltage ESD method
    Patent number: 8309422
    Abstract: In one embodiment, an ESD device is configured to include a zener diode and a P-N diode and to have a conductor that provides a current path between the zener diode and the P-N diode.
    Type: Grant
    Filed: September 27, 2010
    Date of Patent: November 13, 2012
    Assignee: Semiconductor Components Industries, LLC
    Inventors: David D. Marreiro, Sudhama C. Shastri, Ali Salih, Mingjiao Liu, John Michael Parsey, Jr.
  • Method of forming a high capacitance diode
    Patent number: 8222115
    Abstract: In one embodiment, high doped semiconductor channels are formed in a semiconductor region of an opposite conductivity type to increase the capacitance of the device.
    Type: Grant
    Filed: February 16, 2012
    Date of Patent: July 17, 2012
    Assignee: Semiconductor Components Industries, LLC
    Inventors: David D. Marreiro, Sudhama C. Shastri, Gordon M. Grivna, Earl D. Fuchs
  • METHOD OF FORMING A HIGH CAPACITANCE DIODE
    Publication number: 20120142171
    Abstract: In one embodiment, high doped semiconductor channels are formed in a semiconductor region of an opposite conductivity type to increase the capacitance of the device.
    Type: Application
    Filed: February 16, 2012
    Publication date: June 7, 2012
    Inventors: David D. Marreiro, Sudhama C. Shastri, Gordon M. Grivna, Earl D. Fuchs
  • Integrated semiconductor device
    Patent number: 8188572
    Abstract: In one embodiment, a plurality of ESD devices are used to form an integrated semiconductor filter circuit. Additional diodes are formed in parallel with the ESD structures in order to increase the input capacitance.
    Type: Grant
    Filed: April 26, 2011
    Date of Patent: May 29, 2012
    Assignee: Semiconductor Components Industries, LLC
    Inventors: Steven M. Etter, Mingjiao Liu, Ali Salih, David D. Marreiro, Sudhama C. Shastri
  • ESD DEVICE AND METHOD
    Publication number: 20120080769
    Abstract: A semiconductor component and a method for manufacturing the semiconductor component, wherein the semiconductor component includes a transient voltage suppression structure that includes at least two diodes and a Zener diode. In accordance with embodiments, a semiconductor material is provided that includes an epitaxial layer. The at least two diodes and the Zener diode are created at the surface of the epitaxial layer, where the at least two diodes may be adjacent to the Zener diode.
    Type: Application
    Filed: October 1, 2010
    Publication date: April 5, 2012
    Inventors: Umesh Sharma, Harry Yue Gee, Der Min Liou, David D. Marreiro, Sudhama C. Shastri
  • METHOD OF MANUFACTURING A SEMICONDUCTOR COMPONENT AND STRUCTURE
    Publication number: 20120080803
    Abstract: A semiconductor component and methods for manufacturing the semiconductor component that includes a three dimensional helically shaped common mode choke. In accordance with embodiments, a transient voltage suppression device may be coupled to the monolithically integrated common mode choke.
    Type: Application
    Filed: October 1, 2010
    Publication date: April 5, 2012
    Inventors: Phillip Holland, Rong Liu, Umesh Sharma, Der Min Liou, David D. Marreiro, Sudhama C. Shastri
  • Semiconductor Component and Method
    Publication number: 20120074846
    Abstract: A semiconductor component and a method for manufacturing the semiconductor component, wherein the semiconductor component includes one or more transient voltage suppression structures. In an embodiment, the semiconductor component may include an over-voltage detection circuit, an over-current detection circuit, an over-temperature detection circuit, an ESD protection circuit, or combinations of these circuits.
    Type: Application
    Filed: September 27, 2010
    Publication date: March 29, 2012
    Inventors: David D. Marreiro, Sudhama C. Shastri, Stefan Gueorguiev