Patents by Inventor Sudhama C. Shastri

Sudhama C. Shastri has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • MULTI-CHANNEL ESD DEVICE AND METHOD THEREFOR
    Publication number: 20090079001
    Abstract: In one embodiment, an ESD device is configured to include a zener diode and a P-N diode.
    Type: Application
    Filed: September 21, 2007
    Publication date: March 26, 2009
    Inventors: Ali Salih, Mingjiao Liu, Sudhama C. Shastri, Thomas Keena, Gordon M. Grivna, John Michael Parsey, JR., Francine Y. Robb, Ki Chang
  • SEMICONDUCTOR COMPONENT AND METHOD OF MANUFACTURE
    Publication number: 20080157217
    Abstract: A semiconductor component that includes an integrated passive device and method for manufacturing the semiconductor component. Vertically integrated passive devices are manufactured above a substrate. In accordance with one embodiment, a resistor is manufactured in a first level above a substrate, a capacitor is manufactured in a second level that is vertically above the first level, and a copper inductor is manufactured in a third level that is vertically above the second level. The capacitor has aluminum plates. In accordance with another embodiment, a resistor is manufactured in a first level above a substrate, a copper inductor is manufactured in a second level that is vertically above the first level, and a capacitor is manufactured in a third level that is vertically above the second level. The capacitor may have aluminum plates or a portion of the copper inductor may serve as one of its plates.
    Type: Application
    Filed: December 29, 2006
    Publication date: July 3, 2008
    Inventors: Peter A. Burke, Sallie Hose, Sudhama C. Shastri
  • Integrated filter structure having improved interchannel isolation and method of manufacture
    Publication number: 20080001186
    Abstract: In one embodiment, a filter structure includes first and second filter devices formed using a semiconductor substrate. A vertical ground plane structure prevents cross-coupling between the first and second filter devices.
    Type: Application
    Filed: July 3, 2006
    Publication date: January 3, 2008
    Inventors: Sudhama C. Shastri, Yenting Wen
  • Semiconductor device and method of providing regions of low substrate capacitance
    Patent number: 7276425
    Abstract: A semiconductor device (2) includes a semiconductor substrate (12) having a surface (13) formed with a first recessed region (20). A first dielectric material (60) is deposited in the first recessed region and formed with a second recessed region (76), and a second dielectric material (100) is grown over the first dielectric material to seal the second recessed region.
    Type: Grant
    Filed: November 25, 2005
    Date of Patent: October 2, 2007
    Assignee: Semiconductor Components Industries, L.L.C.
    Inventors: Guy E. Averett, Keith G. Kamekona, Sudhama C. Shastri, Weizhong Cai, Gordon L. Bratten, Bladimiro Ruiz, Jr.
  • Semiconductor device with high frequency parallel plate trench capacitor structure
    Patent number: 6984860
    Abstract: A semiconductor device (10) is formed on a semiconductor substrate (12) whose surface (24) is formed with a trench (18). A capacitor (20) has a first plate (22) formed over the substrate surface with first and second portions lining first and second sidewalls (25) of the trench, respectively. A second plate (35, 38) is formed over the first plate and extends into the trench between the first and second portions.
    Type: Grant
    Filed: November 27, 2002
    Date of Patent: January 10, 2006
    Assignee: Semiconductor Components Industries, L.L.C.
    Inventors: Gordon M. Grivna, Irene S. Wan, Sudhama C. Shastri
  • Semiconductor device with parallel plate trench capacitor and method
    Publication number: 20040099898
    Abstract: A semiconductor device (10) is formed on a semiconductor substrate (12) whose surface (24) is formed with a trench (18). A capacitor (20) has a first plate (22) formed over the substrate surface with first and second portions lining first and second sidewalls (25) of the trench, respectively. A second plate (35, 38) is formed over the first plate and extends into the trench between the first and second portions.
    Type: Application
    Filed: November 27, 2002
    Publication date: May 27, 2004
    Applicant: Semiconductor Components Industries, LLC.
    Inventors: Gordon M. Grivna, Irene S. Wan, Sudhama C. Shastri