Abstract: A method for simultaneously producing carbon nanotubes and hydrogen according to the present invention is a method for simultaneously producing carbon nanotubes and hydrogen, in which using a carbon source containing carbon atoms and hydrogen atoms and being decomposed in a heated state, and a catalyst for producing carbon nanotubes and H2 from the carbon source, the above carbon nanotubes are synthesized on a support in a heated state, placed in a reactor, and simultaneously, the above H2 is synthesized from the above carbon source, the method comprising a synthesis step of flowing a source gas comprising the above carbon source over the above support, on which the above catalyst is supported, to synthesize the above carbon nanotubes on the above support and simultaneously synthesize the above H2 in a gas flow.

Abstract: A heat dissipation structure and a synthesizing method thereof are provided by the present disclosure. The method comprises: providing a metal foil; forming a deposition substrate on a first surface of the metal foil, wherein the deposition substrate includes a barrier layer disposed on the metal foil and a catalyst layer disposed on the barrier layer, such that catalyst in the catalyst layer is prevented from diffusing into the metal foil; and synthesizing a carbon nanotube array on the deposition substrate formed on the first surface. The method provided by the present disclosure can increase density of the CNTs in the heat dissipation structure.

Abstract: The present invention provides a method for manufacturing a monocrystalline film and a device formed by the above method, and according to the method mentioned above, lift-off of the monocrystalline silicon film is preferably performed and a high-purity monocrystalline silicon film can be obtained. A monocrystalline silicon substrate (template Si substrate) 201 is prepared, and on this monocrystalline silicon substrate 201, an epitaxial sacrificial layer 202 is formed. Subsequently, on this sacrificial layer 202, a monocrystalline silicon thin film 203 is rapidly epitaxially-grown using a RVD method, followed by etching of the sacrificial layer 202, whereby a monocrystalline silicon thin film 204 used as a photovoltaic layer of solar cells is formed.

Abstract: A heat exchanger type reaction tube includes a first tube part that forms a first flow channel into which a feed gas flows and in which the feed gas moves down; a second tube part that forms a second flow channel which is connected to the first flow channel and in which the feed gas moves up and that has a granular catalyst carrying support medium charged therein; and a heating device that heats the first tube part and the second tube part. Then, the first flow channel and the second flow channel are adjacent to each other while being separated from each other by a partition wall, and the second flow channel is provided with a distributor which holds the catalyst carrying support medium and through which the feed gas passes.

Abstract: The present invention relates to a method for producing carbon nanotubes, comprising a synthesis step of synthesizing carbon nanotubes on a support on which a catalyst is supported by flowing a source gas consisting of acetylene, carbon dioxide, and an inert gas over the support, wherein in the source gas, a partial pressure of the acetylene is 1.33×101 to 1.33×104 Pa, a partial pressure of the carbon dioxide is 1.33×101 to 1.33×104 Pa, and a partial pressure ratio of the acetylene to the carbon dioxide (acetylene/carbon dioxide) is in the range of 0.1 to 10.

Abstract: The method for producing carbon nanotubes employs a carbon source that contains carbon and is decomposed when heated and a catalyst on a support that serves as a catalyst for production of carbon nanotubes from the carbon source. The method includes a catalyst loading step in which the catalyst starting material is distributed over the support to load the catalyst onto the support, a synthesis step in which the carbon nanotubes are synthesized on the support, and a separating step in which a separating gas stream is distributed over the support to separate the carbon nanotubes from the support, wherein the catalyst loading step, the synthesis step and the separating step are carried out while keeping the support in a heated state and switching supply of the catalyst starting material, the carbon source and the separating gas stream.

Abstract: A method for simultaneously producing carbon nanotubes and hydrogen according to the present invention is a method for simultaneously producing carbon nanotubes and hydrogen, in which using a carbon source containing carbon atoms and hydrogen atoms and being decomposed in a heated state, and a catalyst for producing carbon nanotubes and H2 from the carbon source, the above carbon nanotubes are synthesized on a support in a heated state, placed in a reactor, and simultaneously, the above H2 is synthesized from the above carbon source, the method comprising a synthesis step of flowing a source gas comprising the above carbon source over the above support, on which the above catalyst is supported, to synthesize the above carbon nanotubes on the above support and simultaneously synthesize the above H2 in a gas flow.

Abstract: The present invention relates to a method of producing carbon nanotubes, comprising a catalyst particle forming step of heating and reducing a catalyst raw material to form catalyst particles and a carbon nanotube synthesizing step of flowing a raw material gas onto the heated catalyst particles to synthesize carbon nanotubes, wherein a carbon-containing compound gas without an unsaturated bond is flowed onto the catalyst raw material and/or the catalyst particles in at least one of the catalyst particle forming step and the carbon nanotube synthesizing step.

Abstract: The present invention relates to metal catalyst particles for carbon nanotube synthesis, comprising carbon-containing regions on their surfaces.

Abstract: A production method for producing graphene on a substrate, and the like are provided. According to the method, in a forming step heating is conducted to a solid solution temperature at which a solid solution of carbon dissolved in a metal is able to be formed, and a solid solution layer (505) composed of the solid solution on a substrate (103) is formed; and in a removing step graphene (102) is grown on the substrate (103) by removing the metal from the solid solution layer (505) while maintaining the heating to the solid solution temperature. As a solvent for dissolving carbon a metal composed of a single element as well as various alloys are applicable. The graphene (102) touches directly the substrate (103), by removing the metal from the solid solution layer (505) by supplying an etching gas.

Abstract: A carbon nanotube device has a substrate (1), a layer (3) having a space (5) which penetrates in the vertical direction of the substrate (1), and carbon nanotubes (7) formed on the surface of the substrate facing the space (5) in such a manner as to have number density distributions successively changed according to the distances from the center of the space (5), the supply amount of catalyst substances is diluted by supplying the catalyst substances through an opening of a coating film (4) opposite to the substrate (1) and the hole (5), a catalyst having a nominal thickness distribution according to the way how the space (5) appears is formed on the substrate (1) facing the space (5), and a carbon source is supplied, thereby forming carbon nanotubes having the number density distribution are formed on the substrate (1).

Abstract: A production method for producing graphene on a substrate, and the like are provided. According to the method, in a forming step heating is conducted to a solid solution temperature at which a solid solution of carbon dissolved in a metal is able to be formed, and a solid solution layer (505) composed of the solid solution on a substrate (103) is formed; and in a removing step graphene (102) is grown on the substrate (103) by removing the metal from the solid solution layer (505) while maintaining the heating to the solid solution temperature. As a solvent for dissolving carbon a metal composed of a single element as well as various alloys are applicable. The graphene (102) touches directly the substrate (103), by removing the metal from the solid solution layer (505) by supplying an etching gas.

Abstract: The present invention relates to a method for producing carbon nanotubes, comprising a synthesis step of synthesizing carbon nanotubes on a support on which a catalyst is supported by flowing a source gas consisting of acetylene, carbon dioxide, and an inert gas over the support, wherein in the source gas, a partial pressure of the acetylene is 1.33×101 to 1.33×104 Pa, a partial pressure of the carbon dioxide is 1.33×101 to 1.33×104 Pa, and a partial pressure ratio of the acetylene to the carbon dioxide (acetylene/carbon dioxide) is in the range of 0.1 to 10.

Abstract: [Problems to be Solved]There is provided a method for production of a carbon nanotube, which allows for production of the carbon nanotube in a large scale and at a low cost. [Solution] The temperature of a catalyst loaded on a support is raised by heating the support and a raw material gas containing a carbon source is supplied on the catalyst to synthesize the carbon nanotube. The synthesized carbon nanotube is recovered, and after the recovery, the catalyst is subjected to a regeneration treatment to repeatedly utilize the support. Since the catalyst deteriorates, the catalyst is regenerated periodically or nonperiodically during the production. The regeneration treatment of the catalyst involves an oxidation treatment of the catalyst. Further, after the oxidation treatment, a reducing gas is fed to and brought into contact with the catalyst surface to reduce the catalyst. As the support, a honeycomb is used.

Abstract: Disclosed is a method of forming carbon nanotubes on a conductor that covers a portion of a substrate, the method includes depositing a mesh-like conductive member made of Mo or the like on a substrate made of glass or the like, forming a catalyst support, such as Al2O3, and a catalyst such as Fe or Co on the conductive member, placing the substrate in a carbon-source gas atmosphere, and generating heat with the conductive member for a short period of time to grow nanotubes while avoiding damage to the substrate.

Abstract: The present invention provides a carbon nanomaterial production apparatus 1 that includes a reaction tube 2 into which raw material gas and carrier gas are supplied and accordingly in which carbon nanomaterial is grown, a connection tube 4 that is connected to the reaction tube 2 and through which an aerosol-like mixture of the carbon nanomaterial and the carrier gas passes, and a collection tube 3 that is connected to the connection tube 4 and collects the carbon nanomaterial from the mixture. The collection tube 3 includes a discharge section 32 that is located above a junction 33 with the connection tube 4 and discharges the carrier gas contained in the mixture to outside, and a trapping section 31 that is located below the junction 33 with the connection tube 4 and traps the carbon nanomaterial that is separated from the mixture by gravitational sedimentation.

Abstract: The present invention provides the technology for burying metal even in a fine concave portion such as trench and via. According to an embodiment of the present invention, a vapor of the metal as the objective material, a gas containing halogen for etching the metal, and a metal halide vapor made up of the metal element and the halogen element are supplied to the substrate, which thus forms a metal halide layer in the concave portion, and thereby deposits the metal under the metal halide layer. The procedure can achieve the above object.

Abstract: Provided are a silicon film which can give an electrode suitable for use in high-capacity lithium secondary batteries, and a process for easily producing the silicon film. The silicon film comprises a columnar aggregate which is an aggregate of columnar structures made of Si or a Si compound. The silicon film may be a film wherein the diameter of the columnar structures is from 10 nm to 100 nm and the film thickness is from 0.2 ?m to 100 ?m. In the process for preparing a silicon film on a substrate by vapor deposition using a vapor deposition source made of Si or a Si compound, the temperature of the vapor deposition source is 1700 K or higher, the temperature of the substrate is lower than that of the vapor deposition source, and the temperature difference between the vapor deposition source and the substrate is 700 K or larger.

Abstract: A method for simultaneously producing carbon nanotubes and hydrogen according to the present invention is a method for simultaneously producing carbon nanotubes and hydrogen, in which using a carbon source containing carbon atoms and hydrogen atoms and being decomposed in a heated state, and a catalyst for producing carbon nanotubes and H2 from the carbon source, the above carbon nanotubes are synthesized on a support in a heated state, placed in a reactor, and simultaneously, the above H2 is synthesized from the above carbon source, the method comprising a synthesis step of flowing a source gas comprising the above carbon source over the above support, on which the above catalyst is supported, to synthesize the above carbon nanotubes on the above support and simultaneously synthesize the above H2 in a gas flow.

Abstract: In order to form carbon nanotubes on a conductor covering a portion of a substrate in a short heating time, a mesh-like conductive member (102) made of Mo or the like is deposited on a substrate (101) made of glass or the like; a catalyst support, such as Al2O3, and a catalyst, such as Fe or Co, are formed on the conductive member; and the substrate (101) is placed in a carbon-source gas atmosphere and heated for only a short time by exposing the conductive member (102) to voltage or microwaves. As a result, thin carbon nanotubes (104) grow from the conductive member (102) through a catalyst support (503) and a catalyst (504). The carbon nanotubes (104) function as an emitter of a planar light-emitting device (11) and the conductive member (102) functions as a cathode.