Abstract: The method for producing carbon nanotubes of the invention employs a carbon source that contains carbon and is decomposed when heated and a catalyst that serves as a catalyst for production of carbon nanotubes from the carbon source, to synthesize the carbon nanotubes on a heated support placed in a reactor, the method comprising a catalyst loading step in which the catalyst starting material, as the starting material for the catalyst, is distributed over the support to load the catalyst onto the support, a synthesis step in which the carbon source is distributed over the support to synthesize the carbon nanotubes on the support, and a separating step in which a separating gas stream is distributed over the support to separate the carbon nanotubes from the support, wherein the catalyst loading step, the synthesis step and the separating step are carried out while keeping the support in a heated state and switching supply of the catalyst starting material, the carbon source and the separating gas stream.

Abstract: The present invention provides a method for manufacturing a monocrystalline film and a device formed by the above method, and according to the method mentioned above, lift-off of the monocrystalline silicon film is preferably performed and a high-purity monocrystalline silicon film can be obtained. A monocrystalline silicon substrate (template Si substrate) 201 is prepared, and on this monocrystalline silicon substrate 201, an epitaxial sacrificial layer 202 is formed. Subsequently, on this sacrificial layer 202, a monocrystalline silicon thin film 203 is rapidly epitaxially-grown using a RVD method, followed by etching of the sacrificial layer 202, whereby a monocrystalline silicon thin film 204 used as a photovoltaic layer of solar cells is formed.

Abstract: The present invention provides a method for manufacturing a monocrystalline film and a device formed by the above method, and according to the method mentioned above, lift-off of the monocrystalline silicon film is preferably performed and a high-purity monocrystalline silicon film can be obtained. A monocrystalline silicon substrate (template Si substrate) 201 is prepared, and on this monocrystalline silicon substrate 201, an epitaxial sacrificial layer 202 is formed. Subsequently, on this sacrificial layer 202, a monocrystalline silicon thin film 203 is rapidly epitaxially-grown using a RVD method, followed by etching of the sacrificial layer 202, whereby a monocrystalline silicon thin film 204 used as a photovoltaic layer of solar cells is formed.

Abstract: The present invention provides the technology for burying metal even in a fine concave portion such as trench and via. According to an embodiment of the present invention, a vapor of the metal as the objective material, a gas containing halogen for etching the metal, and a metal halide vapor made up of the metal element and the halogen element are supplied to the substrate, which thus forms a metal halide layer in the concave portion, and thereby deposits the metal under the metal halide layer. The procedure can achieve the above object.

Abstract: [Problems to be Solved] There is provided a method for production of a carbon nanotube, which allows for production of the carbon nanotube in a large scale and at a low cost. [Solution] The temperature of a catalyst loaded on a support is raised by heating the support and a raw material gas containing a carbon source is supplied on the catalyst to synthesize the carbon nanotube. The synthesized carbon nanotube is recovered, and after the recovery, the catalyst is subjected to a regeneration treatment to repeatedly utilize the support. Since the catalyst deteriorates, the catalyst is regenerated periodically or nonperiodically during the production. The regeneration treatment of the catalyst involves an oxidation treatment of the catalyst. Further, after the oxidation treatment, a reducing gas is fed to and brought into contact with the catalyst surface to reduce the catalyst. As the support, a honeycomb is used.

Abstract: The present invention provides a method for manufacturing a monocrystalline film and a device formed by the above method, and according to the method mentioned above, lift-off of the monocrystalline silicon film is preferably performed and a high-purity monocrystalline silicon film can be obtained. A monocrystalline silicon substrate (template Si substrate) 201 is prepared, and on this monocrystalline silicon substrate 201, an epitaxial sacrificial layer 202 is formed. Subsequently, on this sacrificial layer 202, a monocrystalline silicon thin film 203 is rapidly epitaxially-grown using a RVD method, followed by etching of the sacrificial layer 202, whereby a monocrystalline silicon thin film 204 used as a photovoltaic layer of solar cells is formed.

Abstract: A carbon nanotube device has a substrate (1), a layer (3) having a space (5) which penetrates in the vertical direction of the substrate (1), and carbon nanotubes (7) formed on the surface of the substrate facing the space (5) in such a manner as to have number density distributions successively changed according to the distances from the center of the space (5), the supply amount of catalyst substances is diluted by supplying the catalyst substances through an opening of a coating film (4) opposite to the substrate (1) and the hole (5), a catalyst having a nominal thickness distribution according to the way how the space (5) appears is formed on the substrate (1) facing the space (5), and a carbon source is supplied, thereby forming carbon nanotubes having the number density distribution are formed on the substrate (1).

Abstract: A thin film preparation apparatus performs film formation by supplying a precursor CuCl with increased supply accuracy and Cl* from a material supply apparatus outside a chamber into the chamber with the use of a member to be etched, which has been temperature-controlled independently, and depositing a Cu component of the CuCl on a substrate, without complicating temperature control (simply by heating control by a heater), and without the influence of radiation from a plasma.

Abstract: A nanoparticle device that can be arranged at high density and a method for producing the nanoparticle device are provided. An underlying microcrystalline film (2) is formed on a substrate (1) by non-epitaxial growth. The lattice constants of the material for this underlying microcrystalline film (2) and a nanoparticle material (4) are matched. The surface of each underlying microcrystal in the underlying microcrystalline film (2) is used as a very small space. The nanoparticle material (4) is grown on the underlying microcrystal by local epitaxy to produce a nanoparticle in the very small space.