Abstract: A deformation of a stacked lens is suppressed. A stacked lens structure has a configuration in which substrates with lenses having a lens disposed on an inner side of a through-hole formed in the substrate are bonded and stacked by direct bonding. The present technique can be applied to a camera module or the like in which a stacked lens structure in which at least three substrates with lenses including first to third substrates with lenses which are substrates with lenses in which a through-hole is formed in the substrate and a lens is formed on an inner side of the through-hole is integrated with a light receiving element, for example.

Abstract: The present technology relates to an imaging device, an electronic apparatus, and a method of manufacturing an imaging device capable of thinning a semiconductor on a terminal extraction surface while maintaining a strength of a semiconductor chip. There is provided an imaging device including: a first substrate having a pixel region in which pixels are two-dimensionally arranged, the pixels performing photoelectric conversion of light; and a second substrate in which a through silicon via is formed, in which a dug portion is formed in a back surface of the second substrate opposite to an incident side of light of the second substrate, and a redistribution layer (RDL) connected to a back surface of the first substrate is formed in the dug portion. The present technology can be applied to, for example, a semiconductor package including a semiconductor chip.

Abstract: The present technology relates to Provided are a semiconductor device in which an air gap structure can be formed in any desired region regardless of the layout of metallic wiring lines, a method for manufacturing the semiconductor device, and an electronic apparatus. A first wiring layer and a second wiring layer including a metallic film are stacked via a diffusion preventing film that prevents diffusion of the metallic film. The diffusion preventing film is formed by burying a second film in a large number of holes formed in a first film. At least the first wiring layer includes the metallic film, an air gap, and a protective film formed with the second film on the inner peripheral surface of the air gap, and the opening width of the air gap is equal to the opening width of the holes formed in the first film or is greater than the opening width of the holes.

Abstract: The present technology relates to, for example, a lens attached substrate including a substrate which has a through-hole formed therein and a light shielding film formed on a side wall of the through-hole and a lens resin portion which is formed inside the through-hole of the substrate. The present technology can be applied to, for example, a lens attached substrate, a layered lens structure, a camera module, a manufacturing apparatus, a manufacturing method, an electronic device, a computer, a program, a storage medium, a system, and the like.

Abstract: To provide a solid-state imaging device capable of realizing further improvement in quality and reliability of the solid-state imaging device.

Abstract: Provided is an imaging device (1) including: an imaging element (10); and a semiconductor element (20, 30) provided to be opposed to the imaging element and electrically coupled to the imaging element. The semiconductor element includes: a wiring region (20A, 30A) provided in a middle portion and a peripheral region (20B, 30B) outside the wiring region; a wiring layer (22, 32) having a wiring line in the wiring region; a semiconductor substrate (21, 31) opposed to the imaging element with the wiring layer interposed therebetween and having a first surface (Sa, Sc) and a second surface (Sb, Sd) in order from a side of the wiring layer; and a polishing adjustment section (23, 33) including a material that is lower in polishing rate than a constituent material of the semiconductor substrate, the polishing adjustment section being disposed in at least a portion of the peripheral region and provided in a thickness direction of the semiconductor substrate from the second surface.

Abstract: The present technology relates to, for example, a lens attached substrate including a substrate which has a through-hole formed therein and a light shielding film formed on a side wall of the through-hole and a lens resin portion which is formed inside the through-hole of the substrate. The present technology can be applied to, for example, a lens attached substrate, a layered lens structure, a camera module, a manufacturing apparatus, a manufacturing method, an electronic device, a computer, a program, a storage medium, a system, and the like.

Abstract: To suppress occurrence of contamination or damage to a lens. In the present technology, for example, a manufacturing apparatus allows a spacer which is thicker than a height of a lens resin portion protruded from a substrate to be adhered to the substrate. In addition, for example, in the present technology, the manufacturing apparatus molds the lens resin portion inside a through-hole formed in the substrate by using a mold frame configured with two layers of molds and, after molding the lens resin portion, in the state that one mold is adhered to the substrate, the manufacturing apparatus demolds the substrate from the other mold. The present technology can be applied to, for example, a lens-attached substrate, a stacked lens structure, a camera module, a manufacturing apparatus, a manufacturing method, an electronic apparatus, a computer, a program, a storage medium, a system, or the like.

Abstract: A semiconductor device including a device substrate and a readout circuit substrate. The device substrate includes a device region and a peripheral region. In the device region, a wiring layer and a first semiconductor layer including a compound semiconductor material are stacked. The peripheral region is disposed outside the device region. The readout circuit substrate faces the first semiconductor layer with the wiring layer in between, and is electrically coupled to the first semiconductor layer through the wiring layer. The peripheral region of the device substrate has a junction surface with the readout circuit substrate.

Abstract: Provided is an imaging unit more efficiently manufacturable with high dimensional precision. The imaging unit includes: a sensor board including an imaging device, in which the imaging device has a plurality of pixels and allows generation of a pixel signal by receiving outside light in each of the plurality of pixels; a bonding layer including an inorganic insulating material; and a circuit board including a circuit chip and an organic insulating layer, in which a circuit chip has a signal processing circuit that performs signal processing for the pixel signal and is bonded to the sensor board through the bonding layer, and the organic insulating layer covers a vicinity of the circuit chip.

Abstract: A deformation of a stacked lens is suppressed. A stacked lens structure has a configuration in which substrates with lenses having a lens disposed on an inner side of a through-hole formed in the substrate are bonded and stacked by direct bonding. The present technique can be applied to a camera module or the like in which a stacked lens structure in which at least three substrates with lenses including first to third substrates with lenses which are substrates with lenses in which a through-hole is formed in the substrate and a lens is formed on an inner side of the through-hole is integrated with a light receiving element, for example.

Abstract: The present technology relates to a semiconductor device in which an air gap structure can be formed in any desired region regardless of the layout of metallic wiring lines, a method for manufacturing the semiconductor device, and an electronic apparatus. A first wiring layer and a second wiring layer including a metallic film are stacked via a diffusion preventing film that prevents diffusion of the metallic film. The diffusion preventing film is formed by burying a second film in a large number of holes formed in a first film. At least the first wiring layer includes the metallic film, an air gap, and a protective film formed with the second film on the inner peripheral surface of the air gap, and the opening width of the air gap is equal to the opening width of the holes formed in the first film or is greater than the opening width of the holes. For example, the present technology can be applied to a semiconductor device in which wiring layers are stacked, and the like.

Abstract: A deformation of a stacked lens is suppressed. A stacked lens structure has a configuration in which substrates with lenses having a lens disposed on an inner side of a through-hole formed in the substrate are bonded and stacked by direct bonding. The present technique can be applied to a camera module or the like in which a stacked lens structure in which at least three substrates with lenses including first to third substrates with lenses which are substrates with lenses in which a through-hole is formed in the substrate and a lens is formed on an inner side of the through-hole is integrated with a light receiving element, for example.

Abstract: A first light receiving element according to an embodiment of the present disclosure includes a plurality of pixels, a photoelectric converter that is provided as a layer common to the plurality of pixels, and contains a compound semiconductor material, and a first electrode layer that is provided between the plurality of pixels on light incident surface side of the photoelectric converter, and has a light-shielding property.

Abstract: The present disclosure relates to a backside illumination type solid-state imaging device, a manufacturing method for a backside illumination type solid-state imaging device, an imaging apparatus, and electronic equipment by which the manufacturing cost can be reduced. A singulated memory circuit and a singulated logic circuit are laid out in a horizontal direction and are embedded by an oxide film and flattened, and then are stacked so as to be contained in a plane direction under a solid-state imaging element. The present disclosure can be applied to an imaging apparatus.

Abstract: A positional shift of a lens of a stacked lens structure is reduced. A plurality of through-holes is formed at a position shifted from a first target position on a substrate according to a first shift. A lens is formed on an inner side of each of the through-holes using a first mold in which a plurality of first transfer surfaces is disposed at a position shifted from a predetermined second target position according to a second shift and a second mold in which a plurality of second transfer surfaces is disposed at a position shifted from a predetermined third target position according to a third shift. The plurality of substrates having the lenses formed therein is formed according to direct bonding, and the plurality of stacked substrates is divided. The present technique can be applied to a stacked lens structure or the like, for example.

Abstract: Influence of chipping in case of dicing a plurality of stacked substrates is reduced. Provided is a semiconductor device where a substrate, in which a groove surrounding a pattern configured with a predetermined circuit or part is formed, is stacked. The present technology can be applied to, for example, a stacked lens structure where through-holes are formed in each substrate and lenses are disposed in inner sides of the through-holes, a camera module where a stacked lens structure and a light-receiving device are incorporated, a solid-state imaging device where a pixel substrate and a control substrate are stacked, and the like.

Abstract: There is provided a light-receiving device including: a plurality of photoelectric conversion layers including a first photoelectric conversion layer and a second photoelectric conversion layer disposed in respective regions that are different in a planar view; an insulating film that separates the plurality of photoelectric conversion layers from one another; a first inorganic semiconductor material included in the first photoelectric conversion layer; and a second inorganic semiconductor material included in the second photoelectric conversion layer, and different from the first inorganic semiconductor material.

Abstract: Substrates with lenses having lenses disposed therein are aligned with high accuracy. A stacked lens structure has a configuration in which substrates with lenses having a lens disposed on an inner side of a through-hole formed in the substrate are direct-bonded and stacked based on an alignment mark. The alignment mark is formed simultaneously with the through-hole. The present technique can be applied to a camera module or the like in which a stacked lens structure in which at least three substrates with lenses including first to third substrates with lenses which are substrates with lenses in which a through-hole is formed in the substrate and a lens is formed on an inner side of the through-hole is integrated with a light receiving element, for example.

Abstract: The present technology relates to, for example, a lens attached substrate including a substrate which has a through-hole formed therein and a light shielding film formed on a side wall of the through-hole and a lens resin portion which is formed inside the through-hole of the substrate. The present technology can be applied to, for example, a lens attached substrate, a layered lens structure, a camera module, a manufacturing apparatus, a manufacturing method, an electronic device, a computer, a program, a storage medium, a system, and the like.