Abstract: Provided is a method for measuring a component of a biological sample with a biosensor provided with: a capillary for introducing the biological sample; an electrode part including a first electrode system that includes a first working electrode and a first counter electrode in the capillary; and a reagent part disposed so as to be in contact with the electrode part, the reagent part containing an enzyme and a mediator, and the method including a step of starting voltage application for a duration longer than 0 second and up to 0.7 second to the first electrode system within 0 second to 0.5 second after detection of the introduction of the biological sample to obtain a hematocrit value based on a current value obtained thereby.

Abstract: A structure for battery analysis of the present invention includes a pressurizing unit (30) having a pressurizing mechanism, and a pressure receiving unit (10) for receiving pressure acting on a sample battery (S), and pressurizes the sample battery (S) accommodated in a hollow portion of a battery accommodation unit (20) between the pressurizing unit (30) and the pressure receiving unit (10) to suppress expansion and contraction of the sample battery (S).

Abstract: Provision of a piezoelectric element which uses a lightweight and flexible electret material and an electrode layer which is also lightweight, has high conductivity and good flexibility to easily receive electrical signals from an electret, and has good durability. Additionally, provision of a musical instrument provided with such a piezoelectric element. A piezoelectric element comprising an electrode layer (B) on at least one surface of an electret material (A) having pores inside, wherein a porosity of the electret material (A) is 20 to 80%, the electrode layer (B) contains 20 to 70 mass % of a carbon fine particle, and a thickness of the electrode layer (B) is 2 to 100 ?m.

Abstract: Provided is a method for measuring a component of a biological sample with a biosensor provided with: a capillary for introducing the biological sample; an electrode part including a first electrode system that includes a first working electrode and a first counter electrode in the capillary; and a reagent part disposed so as to be in contact with the electrode part, the reagent part containing an enzyme and a mediator, and the method including a step of starting voltage application for a duration longer than 0 second and up to 0.7 second to the first electrode system within 0 second to 0.5 second after detection of the introduction of the biological sample to obtain a hematocrit value based on a current value obtained thereby.

Abstract: Provided is a method for measuring a component of a biological sample with a biosensor provided with: a capillary for introducing the biological sample; an electrode part including a first electrode system that includes a first working electrode and a first counter electrode in the capillary; and a reagent part disposed so as to be in contact with the electrode part, the reagent part containing an enzyme and a mediator, and the method including a step of starting voltage application for a duration longer than 0 second and up to 0.7 second to the first electrode system within 0 second to 0.5 second after detection of the introduction of the biological sample to obtain a hematocrit value based on a current value obtained thereby.

Abstract: Provided is a method for measuring a component of a biological sample with a biosensor provided with: a capillary for introducing the biological sample; an electrode part including a first electrode system that includes a first working electrode and a first counter electrode in the capillary; and a reagent part disposed so as to be in contact with the electrode part, the reagent part containing an enzyme and a mediator, and the method including a step of starting voltage application for a duration longer than 0 second and up to 0.7 second to the first electrode system within 0 second to 0.5 second after detection of the introduction of the biological sample to obtain a hematocrit value based on a current value obtained thereby.

Abstract: Provision of a piezoelectric element which uses a lightweight and flexible electret material and an electrode layer which is also lightweight, has high conductivity and good flexibility to easily receive electrical signals from an electret, and has good durability. Additionally, provision of a musical instrument provided with such a piezoelectric element. A piezoelectric element comprising an electrode layer (B) on at least one surface of an electret material (A) having pores inside, wherein a porosity of the electret material (A) is 20 to 80%, the electrode layer (B) contains 20 to 70 mass % of a carbon fine particle, and a thickness of the electrode layer (B) is 2 to 100 ?m.

Abstract: A semiconductor device generates battery state information including information of a capacity that can be extracted from a battery in the case of discharging from a full charge state until a discharge cutoff voltage at a predetermined discharge rate, based on measurement results of battery voltage, current, and temperature. The device calculates a first estimate value of capacity that can be extracted in the case of discharging the battery from the full charge state until the discharge cutoff voltage and calculates a second estimate value of capacity that can be extracted in the case of discharging the battery until a voltage larger than the discharge cutoff voltage. The device corrects the first estimate value based on a difference between a capacity value extracted from the battery by discharging the battery from the full charge state until the voltage larger than the discharge cutoff voltage and the second estimate value.

Abstract: A semiconductor device includes a base film, a semiconductor chip mounted on the base film, and a plurality of leads formed on the base film, each of the leads including one end coupled to the semiconductor chip and another end being opposite to the one end. The another end of a first one of the leads and the another end of a second one of the leads are located at different positions respectively between the semiconductor chip and a cut line along which the base film is cut.

Abstract: A semiconductor device generates battery state information including information of a capacity that can be extracted from a battery in the case of discharging from a full charge state until a discharge cutoff voltage at a predetermined discharge rate, based on measurement results of battery voltage, current, and temperature. The device calculates a first estimate value of capacity that can be extracted in the case of discharging the battery from the full charge state until the discharge cutoff voltage and calculates a second estimate value of capacity that can be extracted in the case of discharging the battery until a voltage larger than the discharge cutoff voltage. The device corrects the first estimate value based on a difference between a capacity value extracted from the battery by discharging the battery from the full charge state until the voltage larger than the discharge cutoff voltage and the second estimate value.

Abstract: A TCP type semiconductor device, which is connected to a plurality of substrate-side electrodes parallel to each other and each having a linear shape, has: a base film; a semiconductor chip mounted on the base film; and a plurality of leads formed on the base film and electrically connecting between the semiconductor chip and the plurality of substrate-side electrodes, respectively. Each of the plurality of leads has an external terminal section extending in a first direction and configured to come in contact with corresponding one of the plurality of substrate-side electrodes. A part of the external terminal section is a wide section that is formed wider than the other section of the external terminal section A position of the wide section in the first direction is different between adjacent leads of the plurality of leads.

Abstract: A semiconductor device includes a base film, a semiconductor chip mounted on the base film, and a plurality of leads formed on the base film, each of the leads including one end coupled to the semiconductor chip and another end being opposite to the one end. The another end of a first one of the leads and the another end of a second one of the leads are located at different positions respectively between the semiconductor chip and a cut line along which the base film is cut.

Abstract: A TCP-type semiconductor device has: a base film; a semiconductor chip mounted on the base film; and a plurality of leads formed on the base film. Each lead has: a first terminal portion including a first end that is one end of the each lead and connected to the semiconductor chip; and a second terminal portion including a second end that is the other end of the each lead and located on the opposite side of the first terminal portion. I a terminal region including the second terminal portion of the each lead, the plurality of leads are parallel to each other along a first direction, the plurality of leads include a first lead and a second lead that are adjacent to each other, and the first lead and the second lead are different in a position of the second end in the first direction.

Abstract: A TCP type semiconductor device, which is connected to a plurality of substrate-side electrodes parallel to each other and each having a linear shape, has: a base film; a semiconductor chip mounted on the base film; and a plurality of leads formed on the base film and electrically connecting between the semiconductor chip and the plurality of substrate-side electrodes, respectively. Each of the plurality of leads has an external terminal section extending in a first direction and configured to come in contact with corresponding one of the plurality of substrate-side electrodes. A part of the external terminal section is a wide section that is formed wider than the other section of the external terminal section A position of the wide section in the first direction is different between adjacent leads of the plurality of leads.

Abstract: A TCP type semiconductor device includes a base film; a semiconductor chip mounted on the base film; and a plurality of leads formed on the base film and electrically connected with the semiconductor chip. Each of the plurality of leads has an external terminal portion exposed externally. The external terminal portion of the each lead includes: a first portion having a first thickness; and a second portion having a second thickness which is thinner than the first thickness. The first portion and the second portion are arranged to oppose to each other between adjacent two of the plurality of leads.

Abstract: A TCP-type semiconductor device has: a base film; a semiconductor chip mounted on the base film; and a plurality of leads formed on the base film and electrically connected to the semiconductor chip. Each of the plurality of leads has a test pad section at a position other than both ends of the each lead.

Abstract: A TCP-type semiconductor device has: a base film; a semiconductor chip mounted on the base film; and a plurality of leads formed on the base film. Each lead has: a first terminal portion including a first end that is one end of the each lead and connected to the semiconductor chip; and a second terminal portion including a second end that is the other end of the each lead and located on the opposite side of the first terminal portion. I a terminal region including the second terminal portion of the each lead, the plurality of leads are parallel to each other along a first direction, the plurality of leads include a first lead and a second lead that are adjacent to each other, and the first lead and the second lead are different in a position of the second end in the first direction.

Abstract: A mask pattern correcting method is comprised of a before-correction pattern edge defining step for defining an edge of a mask pattern, a deviated position setting step for setting a close point and a isolated point based on the deviation between the pattern edges of the mask pattern and the design pattern, an edge selecting step for correcting an edge located within specified distance from the isolated point, and selecting a mask pattern edge that will have smaller variation of the close point light intensity and larger variation of isolated point light intensity by the correction, a correcting step for correcting an edge to be corrected such that the isolated point light intensity after correction satisfies a criterion for correction, an after-correction pattern edge defining step for defining a pattern edge of the corrected mask pattern, and an end determining step for ending correction when the deviation between the defined after-correction pattern edge and the edge of the design pattern is within a speci

Abstract: A method for a burn-in test includes steps (a) and (b). In the step (a), an operation test of a first semiconductor device is executed through first probes provided on a probe card. In the step (b), a stress is applied to a second semiconductor device through second probes provided on the probe card while the operation test is executed.